BC846AD87Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BC846AD87Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846A
BC846B
BC847A
BC847B
BC847C
C
C
E
E
B
B
SOT-23
Mark: 1A. / 1B.
SOT-23
Mark: 1E. / 1F. / 1G.
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1.0 µA to 50 mA.
Sourced from Process 07.
3
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
65
45
80
50
6.0
V
V
V
V
V
BC846 series
BC847 series
BC846 series
BC847 series
VCES
VEBO
IC
Emitter-Base Voltage
Collector Current - Continuous
100
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
*BC846 / BC847
PD
Total Device Dissipation
Derate above 25 C
325
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Ambient
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
65
45
80
50
V
V
V
IC = 10 mA, IB = 0 846A / B
847A / B
V(BR)CES
IC = 10 µA, IE = 0
846A / B
847A / B
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
6.0
IE = 10 µA, IC = 0
VCB = 30 V
15
nA
5.0
VCB = 30 V, TA = 150°C
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 2.0 mA, VCE = 5.0 V
110
200
420
220
450
800
846A / 847A
846B / 847B
847C
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
0.25
0.6
0.70
0.77
V
V
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
0.58
100
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0,
f = 100 MHz
MHz
fT
Output Capacitance
Noise Figure
VCB = 10 V, f = 1.0 MHz
4.5
10
pF
dB
Cobo
NF
IC = 0.2 mA, VCE = 5.0,
RS = 2.0 k , f = 1.0 kHz,
Ω
BW = 200 Hz
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
1200
0.3
0.25
0.2
VCE = 5.0 V
125 °C
1000
800
600
400
200
0
β = 10
125 °C
0.15
0.1
25 °C
25 °C
- 40 °C
- 40 °C
0.05
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
0.8
25 °C
25 °C
0.6
125 °C
125 °C
0.4
β = 10
VCE = 5.0 V
0.2
0.1
1
10
100
0.1
1
10
40
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
10
5
4
3
2
1
0
f = 1.0 MHz
VCB = 45V
3
C
te
1
C
ob
0.1
0
4
8
12
16
20
25
50
75
100
125
150
REVERSE BIAS VOLTAGE (V)
TA - AMBIE NT TEMP ERATURE ( C)
°
Normalized Collector-Cutoff Current
vs Ambient Temperature
Wideband Noise Frequency
vs Source Resistance
1000
5
VCE = 5.0 V
BANDWIDTH = 15.7 kHz
4
3
2
1
0
100
10
1
I
= 100 µA
C
I
= 30 µA
C
I
= 10 µA
C
25
50
75
100
125
150
1,000
2,000
5,000
10,000
20,000
50,000
100,000
TA - AMBIENT TEMPERATURE ( C)
°
R
- SOURCE RESISTANCE (Ω )
S
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Contours of Constant Gain
Bandwidth Product (fT )
Noise Figure vs Frequency
10
I
R
= 200 µA,
= 10 kΩ
C
10
7
S
8
6
4
2
175 MHz
I
= 100 µA,
C
R
= 10 kΩ
S
5
I
= 1.0 mA,
C
R
= 500 Ω
150 MHz
S
3
2
I
= 1.0 mA,
C
R
= 5.0 kΩ
S
125 MHz
100 MHz
75 MHz
V
= 5.0V
CE
1
0
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
f - FREQUENCY (MHz)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
10,000
5,000
10,000
5,000
3.0 d
B
4.0 d
B
2.0 d
B
2,000
1,000
500
2,000
1,000
500
3.0 d
B
6.0 d
B
4.0 d
B
8.0 d
B
V CE = 5.0 V
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
6.0 dB
8.0 d
10 d
B
f = 100 Hz
BANDWIDTH
= 20 Hz
B
200
100
200
100
12 d
B
14 d
B
1
10
100
1,000
1
10
100
1,000
I
- COLLECTOR CURRENT ( A)
µ
I
- COLLECTOR CURRENT ( µ A)
C
C
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
10000
5000
10000
5000
1.0 d
B
2.0 d
B
2000
1000
500
2.0 d
B
2000
1000
500
3.0 d
B
3.0 d
B
4.0 d
B
VCE
5.0V
f = 1.0 MHz
BANDWIDTH
= 200kHz
=
4.
0 dB
5.0
dB
6.0
VCE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
6.0 d
B
200
100
200
100
dB
7.0 d
8.0 d
B
B
8.0 d
B
1
10
100
1000
0.01
0.1
1
10
µ
I C - COLLECTOR CURRENT ( A)
µ
I C - COLLECTOR CURRENT ( A)
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0 kHz)
Typical Common Emitter Characteristics
1.4
Typical Common Emitter Characteristics
1.5
h
fe
1.4
h ie
VCE = 5.0V
f = 1.0kHz
1.3
h re
h fe
h oe
1.3
h
ie
I C = 1.0mA
1.2
1.1
1
h
oe
1.2
1.1
1
h
h
re
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h oe
h fe
h re
IC = 1.0mA
f = 1.0kHz
TA = 25 C
0.9
0.8
h ie
h
fe
°
-100
-50
0
50
100
150
0
5
10
15
20
25
T J - JUNCTIO N TEMP ERATURE ( C)
V CE - COLLECTOR VOLTAGE (V)
°
Typical Common Emitter Characteristics
100
f = 1.0kHz
h
oe
10
1
h
and h
re
ie
h
re
h
oe
3
h
fe
h
fe
h
ie
0.1
0.01
0.1 0.2
0.5
1
2
5
10 20
50 100
I C - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号：
BC846AE6327HTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
BC846AE6433
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
BC846AE6433HTMA1
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
BC846ALEADFREE
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明