BC549AD74Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;型号: | BC549AD74Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
文件: | 总4页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC546/547/548/549/550
Switching and Applications
•
•
•
High Voltage: BC546, V
Low Noise: BC549, BC550
Complement to BC556 ... BC560
=65V
CEO
TO-92
1. Collector 2. Base 3. Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage : BC546
80
50
30
V
V
V
CBO
: BC547/550
: BC548/549
Collector-Emitter Voltage : BC546
65
45
30
V
V
V
CEO
EBO
: BC547/550
: BC548/549
Emitter-Base Voltage
Collector Current (DC)
: BC546/547
: BC548/549/550
6
5
V
V
I
100
500
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
J
-65 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
15
Units
I
V
V
=30V, I =0
nA
CBO
CB
CE
E
h
=5V, I =2mA
110
800
FE
C
V
V
V
(sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA
90
200
250
600
mV
mV
CE
BE
BE
C
B
I =100mA, I =5mA
C
B
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I =10mA, I =0.5mA
700
900
mV
mV
C
B
I =100mA, I =5mA
C
B
V
=5V, I =2mA
580
660
700
720
mV
mV
CE
CE
C
V
V
V
V
V
=5V, I =10mA
C
f
Current Gain Bandwidth Product
Output Capacitance
=5V, I =10mA, f=100MHz
300
3.5
9
MHz
pF
T
CE
CB
EB
CE
C
C
C
=10V, I =0, f=1MHz
6
ob
ib
E
Input Capacitance
=0.5V, I =0, f=1MHz
pF
C
NF
Noise Figure
: BC546/547/548
: BC549/550
: BC549
=5V, I =200µA
2
10
4
4
dB
dB
dB
dB
C
f=1KHz, R =2KΩ
1.2
1.4
1.4
G
V
=5V, I =200µA
CE
C
: BC550
R =2KΩ, f=30~15000MHz
3
G
h
Classification
FE
Classification
A
B
C
h
110 ~ 220
200 ~ 450
420 ~ 800
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
100
10
1
100
VCE = 5V
IB = 400µA
80
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
60
40
20
0
IB = 100µA
IB = 50µA
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
18
20
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
10000
1000
100
VCE = 5V
IC = 10 IB
1000
100
10
VBE(sat)
VCE(sat)
1
10
1
10
100
1000
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
1000
VCE = 5V
f=1MHz
IE = 0
100
10
1
0.1
1
10
100
1000
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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