BC548C [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | BC548C |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
BC548
BC548A
BC548B
BC548C
TO-92
E
B
C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VEBO
IC
Collector-Emitter Voltage
30
30
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BC548 / A / B / C
PD
Total Device Dissipation
Derate above 25 C
625
5.0
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
Rθ
C/W
°
JA
1997 Fairchild Semiconductor Corporation
548-ABC, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
I = 10 A, I = 0
30
30
30
5.0
V
V
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
V
I = 10 A, I = 0
µ
C
E
V
I = 10 A, I = 0
µ
E
C
VCB = 30 V, IE = 0
VCB = 30 V, I = 0, T = +150 C
15
5.0
nA
A
µ
°
E
A
ON CHARACTERISTICS
hFE
DC Current Gain
VCE = 5.0 V, IC = 2.0 mA
110
110
200
420
800
220
450
800
0.25
0.60
0.70
0.77
548
548A
548B
548C
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
VCE = 5.0 V, IC = 2.0 mA
V
VCE(sat)
VBE(on)
V
V
V
0.58
125
VCE = 5.0 V, IC = 10 mA
SMALL SIGNAL CHARACTERISTICS
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
900
10
NF
Noise Figure
dB
VCE = 5.0 V, I = 200 A,
µ
C
R = 2.0 k , f = 1.0 kHz,
Ω
S
BW = 200 Hz
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