BC327-16D26Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92;型号: | BC327-16D26Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
文件: | 总5页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC327/328
Switching and Amplifier Applications
•
•
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
1. Collector 2. Base 3. Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Emitter Voltage
: BC327
: BC328
Collector-Emitter Voltage
CES
-50
-30
V
V
CEO
EBO
: BC327
: BC328
-45
-25
V
V
Emitter-Base Voltage
-5
-800
V
I
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
mA
mW
°C
C
P
625
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
BV
BV
Collector-Emitter Breakdown Voltage I = -10mA, I =0
CEO
CES
EBO
C
B
: BC327
: BC328
-45
-25
V
V
Collector-Emitter Breakdown Voltage I = -0.1mA, V =0
C
BE
: BC327
: BC328
-50
-30
V
V
Emitter-Base Breakdown Voltage
IE= -10µA, I =0
-5
V
C
I
Collector Cut-off Current
: BC307
CES
V
V
= -45V, V =0
= -25V, V =0
BE
-2
-2
-100
-100
nA
nA
CE
CE
BE
: BC338
h
h
DC Current Gain
V
V
= -1V, I = -100mA
100
40
630
FE1
FE2
CE
CE
C
= -1V, I = -300mA
C
V
V
(sat) Collector-Emitter Saturation Voltage
(on) Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -500mA, I = -50mA
-0.7
-1.2
V
V
CE
C
B
V
= -1V, I = -300mA
C
BE
CE
CE
CB
f
V
V
= -5V, I = -10mA, f=20MHz
100
12
MHz
pF
T
C
C
= -10V, I =0, f=1MHz
ob
E
h
Classification
FE
Classification
16
100 ~ 250
60-
25
40
h
h
160 ~ 400
100-
250 ~ 630
170-
FE1
FE2
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
-500
-400
-300
-20
-16
-12
-8
-200
IB = - 1.0mA
IB = - 0.5mA
-100
-4
IB = 0
IB = 0
-0
-1
-2
-3
-4
-5
-10
-20
-30
-40
-50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
100
10
-10
PULSE
IC = 10 IB
PULSE
VCE = - 2.0V
VCE(sat)
-1
- 1.0V
-0.1
VBE(sat)
1
-0.1
-0.01
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
-100
-10
1000
VCE = -5.0V
VCE = -1V
PULSE
100
-1
-0.1
-0.4
10
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-10
-100
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
-1000
-100
-10
f = 1MHz
SINGLE PULSE
ICP
℃
TC=25
duty cycle<2%
Cib
DC
10
Cob
1
-1
0.1
1
10
100
-1
-10
-100
VBE[V], COLLECTOR-BASE VOLTAGE
CE[V], COLLECTOR-EMITTER VOLTAGE
V
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Input and Output Capacitance
vs. Reverse Voltage
Figure 8. Safe Operating Area
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
TC [OC], CASE TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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