BAV19T50R [FAIRCHILD]
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, D2, 2 PIN;
| 型号： | BAV19T50R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, D2, 2 PIN |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
120
200
250
200
V
V
V
BAV19
BAV20
BAV21
IF(AV)
IFSM
Average Rectified Forward Current
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
Storage Temperature Range
-65 to +200
°C
Tstg
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
500
300
mW
RθJA
C/W
°
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
VR
Breakdown Voltage
120
200
250
V
V
V
BAV19
BAV20
BAV21
IR = 100 µA
I = 100
IR = 100 µA
IF = 100 mA
IF = 200 mA
VR = 100 V
A
µ
R
VF
IR
Forward Voltage
Reverse Current
1.0
1.25
100
100
100
100
100
100
V
V
nA
A
µ
nA
A
µ
nA
A
µ
BAV19
BAV20
BAV21
V = 100 V, T = 150 C
°
R
A
VR = 150 V
V = 150 V, T = 150 C
°
R
A
VR = 200 V
V = 200 V, T = 150 C
°
R
A
CT
trr
Total Capacitance
VR = 0, f = 1.0 MHz
5.0
50
pF
Reverse Recovery Time
IF = IR = 30 mA, IRR = 3.0 mA,
ns
RL = 100Ω
2001 Fairchild Semiconductor Corporation
BAV19/20/21, Rev. C
Small Signal Diode
(continued)
Typical Characteristics
50
40
30
20
10
0
325
Ta=25
C
°
Ta= 25 °C
°
300
275
55
Reverse V1o0lt0age, VR [V]
3
5
10
20
30
50
100
Reverse Current, IR [uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205 V
100
Ta= 25
C
°
°
C
Ta= 25
450
400
350
300
250
90
80
70
60
50
40
30
20
180
200
240
255
Reverse Vo2lt2a0ge, VR [V]
1
2
3
5
10
20
30
50
100
Forward Current, IF [uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100uA
1.4
°
C
°
Ta= 25
Ta= 25
C
700
650
600
550
500
450
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
20
30
50
100
200 300
500
800
0.1
0.2 0.3
0.5
1
2
3
5
10
Forward Current, IF [mA]
Forward Current, IF [mA]
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
BAV19/20/21, Rev.
C
Small Signal Diode
(continued)
Typical Characteristics (continued)
1.3
1.2
1.1
1.0
0.9
0.8
900
800
°
Ta= 25
C
°
Ta= -40
C
700
600
500
400
300
200
100
°
Ta= 25
C
°
Ta= +80
C
0.001 0.003
0.01
0.03
0.1
0.3
1
3
10
0
2
4
6
8
10
12
14
Forward Current, IF [mA]
Reverse Voltage [V]
Figure 7. Forward Voltage
vs Ambient Temperature
Figure 8. Total Capacitance
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
50
40
30
20
400
300
200
100
0
IF = IR = 30 mA
Rloop = 100 Ohms
1.0
1.5
2.0
2.5
3.0
0
50
100
150
Reverse Recovery Current, Irr [mA]
Ambient Temperature, TA
[ C]
Figure 10. Average Rectified Current (IF(AV)
)
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current
versus Ambient Temperature (TA)
500
400
300
DO-35 Pkg
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, IO [ C]
Figure 11. Power Derating Curve
BAV19/20/21, Rev.
C
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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