AN-6208 [FAIRCHILD]
Secondary-Side Synchronous Rectifier (SR) for LLC Resonant Converter; 二次侧同步整流器( SR)的LLC谐振转换器型号: | AN-6208 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Secondary-Side Synchronous Rectifier (SR) for LLC Resonant Converter |
文件: | 总10页 (文件大小:471K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
ANꢀ6208
SecondaryꢀSide Synchronous Rectifier (SR) for
LLC Resonant Converter Using FAN6208
FAN6208 is a synchronous rectification controller for
Introduction
isolated LLC or LC resonant converters that can drive two
individual SR MOSFETs emulating the behavior of rectifier
diodes. FAN6208 measures the SR conduction time of each
switching cycle by monitoring the drainꢀtoꢀsource voltage of
each SR and determines the optimal timing of SR gate
drive. FAN6208 also uses the change of optoꢀcoupler diode
current to adaptively shrink the duration of SR gate drive
signals during load transients to prevent shootꢀthrough. To
improve lightꢀload efficiency, Green Mode disables the SR
drive signals, minimizing gate drive power consumption at
lightꢀload conditions.
The LLC resonant converter has drawn a lot of attention
recently due to its advantages over a conventional series
resonant converter and parallel resonant converter: narrow
frequency variation over wide load, input variation, and
Zero Voltage Switching (ZVS) for the entire load range.
In an LLC resonant converter, rectifier diodes are typically
used to obtain DC output voltage from the transformer
secondary winding. The conduction loss of diode rectifier
contributes significantly to the overall power losses in an
LLC resonant converter; especially in low output voltage
applications. The conduction loss of
a rectifier is
This application note describes the design procedure for a
SR circuit using FAN6208. The guidelines for printed
circuit board (PCB) layout and a design example with
experiment results are also presented. Figure 1 shows the
typical application circuit of FAN6208.
proportional to the product of its forwardꢀvoltage drop and
the forward conduction current. Using synchronous
rectification (SR) where the rectifier diode is replaced by
MOSFET with a small on resistance (RDSON), the forwardꢀ
voltage drop of a synchronous rectifier can be lower than
that of a diode rectifier and, consequently, the rectifier
conduction loss can be reduced.
Figure 1. Typical Application
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
ANꢀ6208
APPLICATION NOTE
LLC Resonance Converter with SR
Q1 Gate
Q2 Gate
Figure 2 shows the simplified schematic of a halfꢀbridge
LLC resonant converter, where Lm is the magnetizing
inductance that acts as a shunt inductor, Lr is the series
resonant inductor, and Cr is the resonant capacitor. Since the
magnetizing inductor is relatively small, a considerable
amount of magnetizing current (Im) exists, which freewheels
in the primary side without being involved in the power
transfer. The primaryꢀside current (Ip) is sum of the
magnetizing current and the secondaryꢀside current referred
to the primary.
IP
Im
Figure 3 shows the typical gain curve of the halfꢀbridge
LLC resonant converter. To allow Zero Voltage Switching
(ZVS) for the primaryꢀside switches, gain curves with
inductive impedance characteristics should be used, where
the gain decreases as frequency increases. The resonant
network has a resonant frequency determined by the
resonance between Lr and Cr. When the switching frequency
is lower than the resonant frequency (below resonance), the
half resonance of reflected secondaryꢀside current (diode
current) finishes before the primaryꢀside switch is turned
off, as shown in Figure 4. When the switching frequency is
higher than the resonant frequency (above resonance) the
primaryꢀside switch is turned off before the half resonance
of reflected secondaryꢀside current (diode current) is
completed, as shown in Figure 5.
ID
ISR1
ISR2
VSR2
2*Vo
SR Onꢀtime
SR1 Gate
Figure 4. Key Waveforms Below ꢀResonance Operation
Figure 2. Schematic of LLC Resonant
Converter with SR
1
fo
=
2
π LrCr
Figure 5. Key Waveforms of AboveꢀResonance
Operation
Lr /Cr
Q =
Rac
Figure 3. Typical Gain Curves of LLC
Resonant Converter
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
2
ANꢀ6208
APPLICATION NOTE
Application Circuit
tSR-ON-DETL
Figure 6 shows the typical application circuit of FAN6208
and Figure 7 shows the typical timing diagram of SR gate
drive signal. FAN6208 senses the drainꢀtoꢀsource voltage of
each SR to determine the gate drive timing. Once the body
diode of SR begins conducting, the drainꢀtoꢀsource voltage
drops to zero, which causes low detection (DETL) pin
voltage to drop to zero. FAN6208 turns on the MOSFET
after tONꢀONꢀDETL (about 350ns), when the voltage on DETL
drops below 2V. As depicted in Figure 8, the turn ꢀon delay
(after tSRꢀONꢀDETL) is a sum of debounce time (150ns) and
propagation delay (200ns).
350ns
DETL1
2V
VDETL1
tDB
tPD
GATE1
150ns 200ns
tSRꢀONꢀDETL
350ns
DETL1
GATE1
2V
VDETL1
tDB
150ns 200ns
tSRꢀONꢀDETL
tPD
FAN6208 measures the SR conduction duration (tDETL),
during which DETL voltage stays lower than 2V, and uses
this information to determine the turnꢀoff instant of SR
gates of the next switching cycle, as shown in Figure 7. The
turnꢀoff instant is obtained by subtracting a dead time
(tDEAD) from the measured SR conduction duration of the
previous switching cycle.
350ns
DETL1
GATE1
VDETL1
2V
tDB
tPD
150ns 200ns
Figure 8. Timing Diagram for Turning On SR
Figure 6. Application Circuit of FAN6208
DETL Pin Configuration
Allowable voltage on the DETL pin is from ꢀ0.3V to 7V.
Since the maximum voltage of the SR drainꢀtoꢀsource
voltage is twice that of the output voltage, a diode (DDETL) is
required for the DETL pin to prevent high voltage. Diode
1N4148 is typically used for DDETL. Since the DETL
internal current source is 50ꢁA, RDETL should be determined
such that the DETL voltage is lower than the low detection
threshold (2V) with enough margin when the SR conducts.
Since the forwardꢀvoltage drop of SR can be as low as zero
when SR current is small, the DETL resistor should be:
(2 −VFD
50ꢀ A
)
RDETL⋅ <
(1)
where VFD is the forwardꢀvoltage drop of DETL diode.
Figure 7. SR Conduction Time Determination
RDETL larger than 20kꢂ is not typically recommended for
proper lowꢀvoltage detection on DETL pin.
RDETL should be determined such that the DETL voltage is
higher than ꢀ0.3V when the maximum voltage drop occurs
across SR, such as:
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
3
ANꢀ6208
APPLICATION NOTE
max
The RP pin has an internal constant current source (41.5ꢁA)
and the pin voltage is determined by the Rp resistor.
Depending on the RP pin voltage, the Green Mode threshold
of tDETL is determined as shown in Figure 12. When RRP is
less than 36Kꢂ, FAN6208 operates in LowꢀFrequency
Mode, where Green Mode is enabled when tDETL is smaller
than 3.75ꢁs. When RRP is larger than 36Kꢂ, Highꢀ
Frequency Mode is selected and Green Mode is enabled for
tDETL smaller than 1.90ꢁs.
ISR
R
−VFD − 0.3
A
DS.ON
(2)
RDETL
>
50
ꢀ
where ISRmax is the maximum current of SR and RDS.ON is
the maximum onꢀresistance of the SR MOSFET at high
temperature.
The RP pin also has two internal thresholds for pinꢀopen /
short protection. Using RP pin short protection, remote on /
off control can be implemented as shown in Figure 13
.
Figure 9. Application Circuit of DETL Pin
RP Pin Configuration
The dead time can be programmed using a resistor on the
RP pin. The relationship between the dead time and SR
conduction duration (tDETL) for different resistor values on
the RP pin are given in Figure 10 and Figure 11. Since the
SR conduction time is shrunk by the protection function
(gateꢀshrink function) when tDEAD is smaller than 125ns, Rp
should be properly selected such that the gateꢀshrink
function does not operate at maximum switching frequency.
Figure 12.RP Pin Operation
Original PSON Circuit Disable RP Pin Circuit
5VB
RP
VDDSB
41.5ꢁA
RD
VDDM
RP
QRP
RG
QPSON
PSON
Figure 10.tDEAD vs. tDETL for Different RP (Low Frequency)
RGS
5VB
Figure 13.Application Circuit of RP Pin for Remote
ON / OFF
GateꢀShrink Functions
In normal operation, the turnꢀoff instant is determined by
subtracting a dead time (tDEAD) from the measured SR
conduction duration of the previous switching cycle, as
shown in Figure 7. This allows proper driving timing for the
SR MOSFETS when the converter is in steady state and the
switching frequency does not change much. However, this
control method may cause shootꢀthrough of SR MOSFETs
when the switching frequency increases fast and switching
Figure 11.tDEAD vs. tDETL for Different RP (High Frequency)
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
4
ANꢀ6208
APPLICATION NOTE
Figure 15.Application Circuit of FD Pin
transition of the primaryꢀside MOSFETs takes place before
the turnꢀoff command of the SR is given. To prevent the
shootꢀthrough problem, FAN6208 has gateꢀshrink functions.
Gate shrink takes place in the following three conditions:
1. When an insufficient dead time is detected in the
previous switching cycle. When the DETL becomes
HIGH within 125ns of the detection window after SR
gate is turned off, the SR gate drive signal in the next
switching cycle is reduced by tSHRINKꢀDT (about 1.25ꢁs)
to increase the dead time as shown in Figure 14
.
Figure 16.Gate Shrink by Feedback Detection
3. When the DETL voltage has ringing around zero. As
depicted in Figure 17, the drain voltage of SR has
ringing around zero at lightꢀload condition after the
switching transition of primaryꢀside switches. When
DETL voltage rises above 2V within 350ns after DETL
voltage drops to zero and stays above 2V longer than
150ns, the gate is shrunk by 1.2ꢁs (tSHRINKꢀRNG), as
shown in Figure 17.
Figure 14.Gate Shrink by Insufficient Dead Time
2. When the feedback information changes fast. FAN6208
monitors the current through the optoꢀcoupler diode by
measuring the voltage across the resistor in series with
optoꢀdiode, as depicted in Figure 15. If the feedback
current through the opto diode increases by more than
20% of the feedback current of the previous switching
cycle, SR gate signal is shrunk by tSHRINKꢀFD (about
1.4ꢁs) for tDꢀSHRINKꢀFD (about 90ꢁs), shown in Figure 16.
Figure 17.Gate Shrink by the DETL Voltage Ringing
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
5
ANꢀ6208
APPLICATION NOTE
Printed Circuit Board Layout
In Figure 18, the power traces are marked as bold lines.
Good PCB layout improves power system efficiency and
reliability and minimizes EMI.
ꢀ
As indicated by 4, the ground of the feedback loop
should be connected to the negative terminal of
output capacitor CO.
ꢀ
ꢀ
ꢀ
Trace 5 should be long and far from Vo terminal.
Keep trace 6 as short as possible.
As indicated by 7, the source terminals of Q1 and Q2
are connected to the negative terminal of Co. Keep
trace 10 short, direct, and wide.
Guidelines
ꢀ
For feedback detection, the FD pin should be connected
to the anode of the opto diode. Connecting the FD pin
through a resistor can improve surge immunity of the
system. Keep trace 1 away from any power trace with
high pulsating current.
ꢀ
As indicated by 8, the negative terminal of Co should
be connected to the case directly.
ꢀ
The control ground (trace 2) and power ground (trace 7)
should meet at a single point to minimize interference.
The connecting trace should be as short as possible.
Figure 18.Layout Considerations
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
6
ANꢀ6208
APPLICATION NOTE
Design Example
The following example is a 12V/300W single output power
supply with LLC resonant converter topology. As Figure 19
shows, the FAN7621 controller is used for the LLC resonant
converter. The integrated CCM PFC controller FAN6982 is
used for PFC stage.
Table 1.
System Specification
Input Voltage Range
PFC Output
90~264VAC
360~390VDC
FAN6982
FAN7621
12V
PFC Controller
Main power Controller
Output Voltage (Vo)
Output Power (Po)
PFC Switching Frequency
The key system parameters are listed in Table 1 and the Bill
of Materials (BOM) is summarized in Table 2.
300W
65kHz
The twoꢀlevel PFC output voltage function of FAN6982 is
used where the typical PFC output voltage is 390V. The
PFC output voltage is reduced to 360V for lowꢀline and
lightꢀload condition to improve efficiency of the PFC stage.
The typical switching frequency (fs) is 65kHz for PFC stage.
LLC resonant converter Switching Frequency 60~140kHz
The turn ratio n of TX1 is 13.5, Lm is 1.2mH, Lr is 150ꢁH,
and Cr is 47nH. 1N4148 is used for D201 & D202 whose
voltage rating is 100V. 27kꢂ is used for R204 (RRP) for the
LowꢀFrequency Mode setting.
Figure 19.Complete Circuit Diagram
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
7
ANꢀ6208
APPLICATION NOTE
Table 2. Bill of Materials
Part
Value
Resistor
Note
Part
Value
Note
Capacitor
10ꢂF
R101
R102
R103
R104
R105
R106
R107
R108
R109
R110
R201
R202
R203
R204
R205
R206
R207
R208
R209
R210
R211
R212
1/4W
1/4W
1/8W
1/8W
1/8W
1/8W
2W
C108
C201
C202
C203
C204
C205
C206
C301
25V
16V
10ꢁ
3.3ꢁ
3.3ꢁ
10kꢁ
10kꢁ
1kꢁ
3300ꢂF
3300ꢂF
16V
47nF
50V
47nF
50V
470nF
25V
100nF
50V
0.2ꢁ
5.1kꢁ
9.1kꢁ
5.6kꢁ
10kꢁ
10kꢁ
10kꢁ
27kꢁ
10kꢁ
10kꢁ
10kꢁ
1kꢁ
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
1/8W
22nF/250V
Transformer
Lr =10ꢂH/ Lm =1200ꢂH
Diode
YꢀCapacitor
TX1
PQ3230
D101
D102
D103
D201
D202
UF1007
1A/1000V
1N4148
1N4148
1N4148
1N4148
Inductor
L = 150ꢂH
L = 1.8ꢂH
MOSFET
FCPF11N60F
FCPF11N60F
FDP025N06
FDP025N06
IC
L101
L201
QP2914
91kꢁ
1kꢁ
Q1
Q2
Q3
Q4
33kꢁ
24kꢁ
Capacitor
C101
C102
C103
C104
C105
C106
C107
270ꢂF
0.33ꢂF
150nF
47nF
450V
50V
1kV
1kV
50V
50V
50V
U1
U2
U3
U4
FAN7621
PC817
LLC Controller
SR Controller
12nF
FAN6208
TL431
100pF
680pF
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
8
ANꢀ6208
APPLICATION NOTE
Figure 20 and Figure 21 show the SR gate drive waveforms
for different RP. As can be seen, the dead time of SR drive
can be programmed.
The efficiency test results of the Schottky diode and
synchronous rectification are shown in Table 3 and Table 4.
Figure 22 compares the efficiencies of Schottky diode and
synchronous rectification. As can be seen, 1~2% efficiency
improvement can be obtained using synchronous
rectification. Figure 22 also shows how the dead time of SR
affects the efficiency. By fineꢀtuning the dead time,
efficiency can be maximized.
Table 3. Efficiency Measurements at VAC=115V on
300W PC Power with Schottky Diodes (MBRP3045)
Output
Watts(W)
Load
Input Watts(W)
Efficiency
100%
50%
20%
358.070
176.38
73.30
307.658
154.91
62.19
85.920%
87.82%
84.80%
Table 4. Efficiency Measurements at VAC=115V on
300W PC Power with SRs (FDP025N06 and
RRP=30kꢁ)
Input
Watts
(W)
Output
Watts
(W)
vs.
Efficiency Schottky
Diode
Load
Figure 20.Secondary Side Current and SR
Gate Signal by RRP=24kꢁ
100%
50%
20%
347.70
172.81
72.41
307.62
154.77
62.21
88.47%
89.56%
85.91%
+2.55%
+1.74%
+1.11%
Figure 22.Efficiency Analysis
Figure 21.Secondary Side Current and SR
Gate Signal by RRP=27kꢁ
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
9
ANꢀ6208
APPLICATION NOTE
Related Resources
FAN6208 — Secondary Synchronous Rectifier Controller for LLC Topology
FAN7621 — PFM Controller for HalfꢀBridge Resonant Converters
FAN6982 — CCM Power Factor Correction Controller
FDP025N06 —FDP025N06 NꢀChannel PowerTrench® MOSFET 60V,265A, 2.5mꢁ
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
FSFR2100 — Fairchild Power Switch for HalfꢀBridge Resonant Converters
AN4137 — Design Guidelines for Offꢀline Flyback Converters Using Fairchild Power Switch (FPS)
ANꢀ4151 — HalfꢀBridge LLC Resonant Converter Design Using FSFRꢀSeries Fairchild Power Switch (FPS)
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© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 3/10/11
www.fairchildsemi.com
10
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