5S1265 [FAIRCHILD]
Power Switch(FPS); 功率开关（FPS ）
| 型号： | 5S1265 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Switch(FPS) |
| 文件： | 总16页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA5S-SERIES
KA5S0765C/KA5S0965/KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
• Wide Operating Frequency Range Up to 150kHz
TO-220-5L
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start-up Current (Max:170µA)
• Low Operating Current (Max:12mA)
1
• Internal High Voltage SenseFET
TO-3P-5L
• Over Voltage Protection With Latch Mode (Min23V)
• Over Load Protection With Latch Mode
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
1
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
1. Drain 2. Gnd 3. V
4. FeedBack 5. Sync.
CC
Internal Block Diagram
Drain
1
V
CC
3
V
CC
UVLO
Bias
+
Vref
VREF UVLO
+
-
-
15/9V
2.5V
SenseFET
Soft Start
& Sync
-
5
4
CLK
OSC
Vth.sy
+
VREF
7V
6V
Q
S
R
Feedback
-
2.5V
+
0.95mA
R
VREF
Voffset
V
CC
V
S
4µA
Rsense
OLP
(Vfb=7.5V)
S
Q
GND
2
R
1
µ
s Window
TSD
Shutdown Latch
Open Circuit
(Tj=160
OVP
(V =25V)
°C)
OCP
S
Power-on Reset
(VCC=6.5V)
(V =1.1V)
CC
Rev.1.0.5
©2003 Fairchild Semiconductor Corporation
KA5S-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5S0765C
Symbol
Value
Unit
Drain-Gate Voltage(R =1MΩ)
V
650
±30
28
V
V
GS
DGR
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
7.0
D
D
5.6
)
I
(E
AS AS
)
27(570)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
140
V
SS
P
D
(Watt H/S)
Darting
W
Total Power Dissipation
1.11
W/°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
KA5S0965
Drain-Gate Voltage(R =1MΩ)
V
650
±30
36
V
V
GS
DGR
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
GS
I
ADC
ADC
ADC
A(mJ)
V
DM
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
9.0
D
D
5.8
)
I
(E
AS AS
)
25(950)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
170
V
SS
P
D
(Watt H/S)
Darting
W
Total Power Dissipation
1.33
W/°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
2
KA5S-SERIES
Absolute Maximum Ratings (Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
KA5S12656
Symbol
Value
Unit
Drain-Gate Voltage(R =1MΩ)
V
650
±30
48
V
V
GS
DGR
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
AS AS
)
25(785)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
160
V
SS
P
D
(Watt H/S)
Darting
W
Total Power Dissipation
1.28
W/°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
KA5S1265
Drain-Gate Voltage(R =1MΩ)
V
650
±30
48
V
V
GS
DGR
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
GS
I
ADC
ADC
ADC
A(mJ)
V
DM
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
AS AS
)
42(785)
30
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 8
160
V
SS
P
D
(Watt H/S)
Darting
W
Total Power Dissipation
1.28
W/°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
°C
STG
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V =50V, R = 27Ω, starting T = 25°C
DD
G
j
3. L = 13µH, starting T = 25°C
j
3
KA5S-SERIES
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
KA5S0765C
Drain-Source Breakdown Voltage
BVDSS
V
V
GS=0V, I
D
=50µA
650
-
-
-
-
V
DS=Max., Rating, VGS=0V
50
µA
Zero Gate Voltage Drain Current
IDSS
V
V
DS=0.8Max., Rating,
-
-
200
µA
GS=0V, T
GS=10V, I
DS=15V, I
C=125°C
Static Drain-Source on Resistance(1)
Forward Transconductance(1)
Input Capacitance
R
DS(on)
V
V
D=4.0A
-
1.25
-
1.6
Ω
gfs
D
=4.0A
3.0
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
1600
310
120
25
V
GS=0V, VDS=25V,
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Coss
Crss
td(on)
tr
f = 1MHz
pF
nS
V
DD=0.5B VDSS, ID=7.0A
(MOSFET switching
time is essentially
independent of operating
temperature)
55
Turn Off Delay Time
Fall Time
td(off)
tf
80
50
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
GS=10V, I
DS=0.5B VDSS(MOSFET
D=7.0A,
Qg
-
-
72
switching time is essentially
independent of operating
temperature)
Gate-Source Charge
Qgs
Qgd
-
-
9.3
-
-
nC
Gate-Drain (Miller) Charge
29.3
KA5S0965
Drain-Source Breakdown Voltage
BVDSS
V
V
GS=0V, I
D
=50µA
650
-
-
-
-
V
DS=Max., Rating, VGS=0V
50
µA
Zero Gate Voltage Drain Current
IDSS
V
V
DS=0.8Max., Rating,
-
-
200
µA
GS=0V, T
GS=10V, I
DS=50V, I
C=125°C
Static Drain-Source on Resistance(1)
Forward Transconductance(1)
Input Capacitance
R
DS(on)
V
V
D=4.5A
-
0.96
-
1.2
-
Ω
gfs
D
=4.5A
5.0
S
Ciss
-
-
-
-
-
-
-
1750
190
78
-
V
GS=0V, VDS=25V,
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Coss
Crss
td(on)
tr
-
f = 1MHz
pF
nS
-
20
50
55
180
70
V
DD=0.5B VDSS, ID=9.0A
23
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
Fall Time
td(off)
tf
85
30
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
GS=10V, I
DS=0.5B VDSS(MOSFET
D=9.0A,
Qg
-
74
95
switching time is essentially
independent of operating
temperature)
Gate-Source Charge
Qgs
Qgd
-
-
12
35
-
-
nC
Gate-Drain (Miller) Charge
4
KA5S-SERIES
Electrical Characteristics (SFET Part) (Continued)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
KA5S12656
Drain-Source Breakdown Voltage
BVDSS
V
V
GS=0V, I
D
=50µA
650
-
-
-
-
V
DS=Max., Rating, VGS=0V
50
µA
Zero Gate Voltage Drain Current
IDSS
V
V
DS=0.8Max., Rating,
-
-
200
µA
GS=0V, T
GS=10V, I
DS=50V, I
C=125°C
Static Drain-Source On Resistance(1)
Forward Transconductance(1)
Input Capacitance
R
DS(on)
V
V
D=6.0A
-
0.72
-
0.9
Ω
gfs
D
=4.0A
5.7
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
2700
300
61
V
GS=0V, VDS=25V,
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Coss
Crss
td(on)
tr
f = 1MHz
pF
nS
V
DD=0.5B VDSS, I
D
=12.0A
18
(MOSFET switching
time is essentially
independent of operating
temperature)
37
Turn Off Delay Time
Fall Time
td(off)
tf
88
36
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
GS=10V, I
DS=0.5B VDSS(MOSFET
D=12.0A,
Qg
-
-
140
switching time is essentially
independent of operating
temperature)
Gate-Source Charge
Qgs
Qgd
-
-
20
69
-
-
nC
Gate-Drain (Miller) Charge
KA5S1265
Drain-Source Breakdown Voltage
BVDSS
V
V
GS=0V, I
D
=50µA
650
-
-
-
-
V
DS=Max., Rating, VGS=0V
50
µA
Zero Gate Voltage Drain Current
IDSS
V
V
DS=0.8Max., Rating,
-
-
200
µA
GS=0V, T
GS=10V, I
DS=50V, I
C=125°C
Static Drain-Source on Resistance(1)
Forward Transconductance(1)
Input Capacitance
R
DS(on)
V
V
D=6.0A
-
0.72
-
0.9
Ω
gfs
D
=4.0A
5.7
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
2700
300
61
V
GS=0V, VDS=25V,
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Coss
Crss
td(on)
tr
f = 1MHz
pF
nS
18
V
DD=0.5BVDSS, ID=12.0A
37
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
Fall Time
td(off)
tf
88
36
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
GS=10V, I
DS=0.5B VDSS(MOSFET
D=12.0A,
Qg
-
-
140
switching time is essentially
independent of operating
temperature)
Gate-Source Charge
Qgs
Qgd
-
-
20
69
-
-
nC
Gate-Drain (Miller) Charge
Note:
1. Pulse Test : Pulse width
≤
300uS, Duty Cycle ≤ 2%
2.MOSFET switching time is essentially independent of operating temperature
1
3. S = ---
R
5
KA5S-SERIES
Electrical Characteristics (Control Part) (Continued)
(V =16V, Tamb = 25°C unless otherwise specified)
CC
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Frequency
V
V
V
=GND
14
8
15
9
16
10
V
V
START
FB
FB
V
=GND
STOP
F
-
18
0
20
1
22
3
kHz
%
OSC
Voltage Stability
F
12V ≤ V
≤ 23V
CC
STABLE
Temperature Stability (Note2)
Maximum Duty Cycle
∆F
-25°C ≤ Τa≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
D
MAX
-
-
92
-
%
Minimum Duty Cycle
D
MIN
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SYNC. & SOFTSTART SECTION
Softstart Voltage
I
V
V
V
=GND
≥ 6.9V
=5V
0.7
6.9
3.0
0.9
7.5
4.0
1.1
8.1
5.0
mA
V
FB
FB
FB
FB
V
SD
I
µA
DELAY
V
V
V
V
V
=2V
=0V
4.7
5.0
5.3
V
mA
V
SS
FB
SS
CC
CC
Softstart Current
I
0.75 0.95 1.15
SS
Sync High Threshold Voltage(Note3)
Sync Low Threshold Voltage(Note3)
V
=16V , V =5V
FB
-
-
7.0
6.0
-
-
SYNCH
V
=16V , V =5V
FB
V
SYNCL
CURRENT LIMIT(SELF-PROTECTION)SECTION
KA5S0765C
KA5S0965
KA5S12656
KA5S1265
3.52
5.28
5.28
7.04
4.0
6.0
6.0
8.0
4.48
6.72
6.72
8.96
Peak Current Limit (Note4)
I
OVER
A
PROTECTION SECTION
Over Voltage Protection
V
V
V
≥ 24V
CC
23
0.9
140
25
1.0
160
28
1.1
-
V
V
OVP
Over Current Latch voltage(Note3)
Thermal Shutdown Tempature(Note2)
TOTAL DEVICE SECTION
Start Up Current
-
-
OCL
TSD
°C
I
V
V
V
V
=GND, V =14V
CC
-
-
0.1
7
0.17
12
mA
mA
START
FB
FB
FB
FB
I
=GND, V =16V
CC
OP
OP(MIN)
Operating Supply Current(Note1)
I
=GND, V =12V
CC
I
=GND, V =30V
CC
OP(MAX)
Note:
1. These parameters are the current flowing in the control IC.
2. These parameters, although guaranteed, are not 100% tested in mass production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor current.
6
KA5S-SERIES
Typical Performance Characteristics
Istart(mA)
0.12
Iop(mA)
12.0
10.0
8.0
0.09
0.06
0.03
0.00
6.0
4.0
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
℃
)
℃
Figure 1. Start Up Current vs. Temp.
Figure 2. Operating Supply Current vs. Temp.
V
(V)
STOP
Vstart(V)
9.30
9.00
8.70
8.40
8.10
15.6
15.3
15.0
14.7
14.4
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
℃
)
℃
Figure 3. Stop Threshold Voltage vs. Temp
Figure 4. Start Threshold Voltage vs. Temp
Fosc(kHz)
19.8
19.1
18.4
17.7
17.0
-25
0
25
50
75
100
125
Temp(
150
)
℃
Figure 5. Initial Frequency VS. Temp
7
KA5S-SERIES
Typical Performance Characteristics (Continued)
Dmax(%)
Ifb(mA)
98.0
96.5
95.0
93.5
92.0
1.10
1.00
0.90
0.80
0.70
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
℃
)
℃
Figure 6. Maximum Duty vs. Temp.
Figure 7. Feedback Source Current vs. Temp.
Vs d(V)
Idelay(uA)
7.55
7.50
7.45
7.40
7.35
3.90
3.70
3.50
3.30
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 8. Shutdown Feedback Voltage vs. Temp.
Figure 9. Shutdown Delay Current vs. Temp.
Vovp(V)
Iover(A)
26.6
4.20
4.10
4.00
3.90
3.80
25.9
25.2
24.5
23.8
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
)
℃
℃
Figure 10. Over Voltage Protection vs. Temp.
Figure 11. Peak Current Limit vs. Temp
8
KA5S-SERIES
Typical Performance Characteristics (Continued)
Iss(mA)
Vs s (V)
5.10
1.0
5.05
1.0
5.00
0.9
0.8
4.95
4.90
-25
0
25
50
75
100
125
Temp(
150
-25
0
25
50
75
100
125
Temp(
150
)
℃
)
℃
Figure 12. Soft Start Current vs. Temp.
Figure 13. Soft Start Voltage vs. Temp.
9
KA5S-SERIES
Package Dimensions
TO-3P-5L
10
KA5S-SERIES
Package Dimensions (Continued)
TO-3P-5L(Forming)
11
KA5S-SERIES
Package Dimensions (Continued)
TO-220-5L
12
KA5S-SERIES
Package Dimensions (Continued)
TO-220-5L(Forming)
13
KA5S-SERIES
TOP Mark and Pinout Information
F
MARKING
Pin No.
Symbol
Drain
Description
SenseFET Drain
YYWW
1
2
3
4
5
GND
Ground (Source)
1
2
3
4
5
V
CC
Control Part Supply Input
PWM Non Inverting Input
Soft start & External Sync.
F/B
S/S
Device
Marking
KA5S0765C
KA5S0965
KA5S12656
KA5S1265
5S0765C
5S0965
5S12656
5S1265
Notes ;
(1) F ; Fairchild Semiconductor
(2) 5S0765C, 5S0965, 5S12656, 5S1265; Device Marking Name
(3) YY: Last Two Digit of Calender Year
(4) WW: Patweek Based on Fairchild Semiconductor Work Month Calender
14
KA5S-SERIES
Ordering Information
Product Number
Package
Marking Code
BVdss
Rds(on)
KA5S0765CTU
TO-220-5L
5S0765C
650V
1.6Ω
KA5S0765CYDTU
TO-220-5L(Forming)
KA5S0965TU
TO-3P-5L
5S0965
5S12656
5S1265
650V
650V
650V
1.2Ω
0.9Ω
0.9Ω
KA5S0965YDTU
TO-3P-5L(Forming)
KA5S12656TU
TO-3P-5L
KA5S12656YDTU
TO-3P-5L(Forming)
KA5S1265TU
TO-3P-5L
KA5S1265YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
15
KA5S-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
2003 Fairchild Semiconductor Corporation
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