4N35MSR2V [FAIRCHILD]

Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6;
4N35MSR2V
型号: 4N35MSR2V
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6

输出元件 光电
文件: 总12页 (文件大小:277K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
March 2007  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,  
tm  
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M  
General Purpose 6-Pin Phototransistor Optocouplers  
Features  
Description  
UL recognized (File # E90700, Volume 2)  
VDE recognized (File # 102497)  
– Add option V (e.g., 4N25VM)  
The general purpose optocouplers consist of a gallium  
arsenide infrared emitting diode driving a silicon pho-  
totransistor in a 6-pin dual in-line package.  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Functional Block Diagram  
1
6
5
4
6
6
2
1
1
3
NC  
6
PIN 1. ANODE  
2. CATHODE  
1
3. NO CONNECTION  
4. EMITTER  
5. COLLECTOR  
6. BASE  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-55 to +150  
-55 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Wave solder temperature (see page 8 for reflow solder profile)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
6
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
30  
70  
V
V
CEO  
CBO  
ECO  
7
V
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
mW/°C  
D
A
Derate above 25°C  
Electrical Characteristics (T = 25°C unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.* Max. Unit  
V
Input Forward Voltage  
I = 10mA  
1.18  
1.50  
10  
V
F
F
I
Reverse Leakage Current  
V = 6.0V  
0.001  
µA  
R
R
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
Collector-Emitter Dark Current  
Collector-Base Dark Current  
Capacitance  
I = 1.0mA, I = 0  
30  
70  
7
100  
120  
10  
V
V
CEO  
CBO  
ECO  
C
F
I = 100µA, I = 0  
C
F
I = 100µA, I = 0  
V
E
F
I
I
V
V
V
= 10V, I = 0  
1
50  
20  
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
= 10V  
C
= 0V, f = 1 MHz  
8
CE  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min. Typ.* Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec  
7500  
Vac(pk)  
ISO  
ISO  
ISO  
11  
V
V
= 500 VDC  
10  
I-O  
I-O  
Isolation Capacitance  
= &, f = 1MHz  
0.2  
2
pF  
*Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
2
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)  
A
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
DC CHARACTERISTICS  
CTR  
Current Transfer Ratio,  
Collector to Emitter  
I = 10mA, V = 10V  
4N35M, 4N36M,  
4N37M  
100  
%
F
CE  
H11A1M  
H11A5M  
50  
30  
20  
4N25M, 4N26M  
H11A2M, H11A3M  
4N27M, 4N28M  
H11A4M  
10  
40  
I = 10mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
F
CE  
T = -55°C  
A
I = 10mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
40  
F
CE  
T = +100°C  
A
V
Collector-Emitter  
Saturation Voltage  
I = 2mA, I = 50mA  
4N25M, 4N26M,  
4N27M, 4N28M,  
0.5  
0.3  
0.4  
V
CE (SAT)  
C
F
I = 0.5mA, I = 10mA  
4N35M, 4N36M,  
4N37M  
C
F
H11A1M, H11A2M,  
H11A3M, H11A4M,  
H11A5M  
AC CHARACTERISTICS  
T
Non-Saturated  
Turn-on Time  
I = 10mA, V = 10V,  
4N25M, 4N26M,  
4N27M, 4N28M,  
H11A1M, H11A2M,  
H11A3M, H11A4,  
H11A5M  
2
µs  
ON  
F
CC  
R = 100(Fig. 11)  
L
I = 2mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
2
2
10  
10  
µs  
µs  
C
CC  
R = 100(Fig. 11)  
L
T
Turn-off Time  
I = 10mA, V = 10V,  
4N25M, 4N26M,  
4N27M, 4N28M,  
H11A1M, H11A2M,  
H11A3M, H11A4M,  
H11A5M  
OFF  
F
CC  
R = 100(Fig. 11)  
L
I = 2mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
2
C
CC  
R = 100(Fig. 11)  
L
* Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
3
Typical Performance Curves  
Fig. 1 LED Forward Voltage vs. Forward Current  
Fig.2 Normalized CTR vs. Forward Current  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
T
= 5.0V  
= 25°C  
Normalized to  
= 10 mA  
CE  
I
A
F
T
T
T
= -55°C  
= 25°C  
= 100°C  
A
A
A
1
10  
100  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
I
- LED FORWARD CURRENT (mA)  
I - FORWARD CURRENT (mA)  
F
F
Fig. 4 CTR vs. RBE (Unsaturated)  
Fig. 3 Normalized CTR vs. Ambient Temperature  
1.4  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 20 mA  
F
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
= 5 mA  
I
= 10 mA  
F
F
I
= 5 mA  
F
I
= 10 mA  
F
I
= 20 mA  
F
V
= 5.0 V  
CE  
Normalized to  
I
= 10 mA  
F
T
= 25°C  
A
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
10  
100  
1000  
R - BASE RESISTANCE (kΩ)  
BE  
T
- AMBIENT TEMPERATURE (°C)  
A
Fig. 6 Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 5 CTR vs. RBE (Saturated)  
100  
10  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
= 25˚C  
A
V
= 0.3 V  
CE  
I
= 20 mA  
= 10 mA  
F
1
I
I = 2.5 mA  
F
F
0.1  
I
= 5 mA  
F
I
= 20 mA  
F
0.01  
I
= 5 mA  
F
I
= 10 mA  
F
0.001  
10  
100  
1000  
0.01  
0.1  
1
10  
R
BE  
- BASE RESISTANCE (k Ω)  
I
- COLLECTOR CURRENT (mA)  
C
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
4
Fig. 8 Normalized t vs. R  
Fig. 7 Switching Speed vs. Load Resistor  
on  
BE  
1000  
100  
10  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
= 10 mA  
F
V
10 V  
= 2 mA  
= 100 Ω  
CC =  
V
= 10 V  
CC  
= 25°C  
I
C
L
T
A
R
T
off  
T
f
T
on  
1
T
r
0.1  
0.1  
1
10  
100  
10  
100  
R
1000  
10000  
100000  
R-LOAD RESISTOR (kΩ)  
- BASE RESISTANCE (k Ω)  
BE  
Fig. 10 Dark Current vs. Ambient Temperature  
Fig. 9 Normalized t vs. R  
off  
BE  
10000  
1000  
100  
10  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
T
= 10 V  
CE  
A
= 25°  
C
1
V
10 V  
= 2 mA  
= 100 Ω  
CC =  
I
C
L
0.1  
R
0.01  
0.001  
0
20  
40  
60  
80  
100  
10  
100  
1000  
10000  
100000  
T
- AMBIENT TEMPERATURE (°C)  
A
R - BASE RESISTANCE (k Ω)  
BE  
TEST CIRCUIT  
WAVE FORMS  
VCC = 10V  
INPUT PULSE  
IC  
IF  
RL  
10%  
90%  
INPUT  
OUTPUT  
OUTPUT PULSE  
RBE  
tr  
tf  
toff  
ton  
I
I
Adjust  
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
5
Package Dimensions  
Through Hole  
Surface Mount  
0.350 (8.89)  
0.320 (8.13)  
0.350 (8.89)  
0.320 (8.13)  
Pin 1 ID  
PIN 1 ID  
0.390 (9.90)  
0.332 (8.43)  
0.260 (6.60)  
0.240 (6.10)  
0.260 (6.60)  
0.240 (6.10)  
0.070 (1.77)  
0.040 (1.02)  
0.070 (1.77)  
0.040 (1.02)  
0.320 (8.13)  
0.320 (8.13)  
0.014 (0.36)  
0.014 (0.36)  
0.010 (0.25)  
0.010 (0.25)  
0.200 (5.08)  
0.115 (2.93)  
0.200 (5.08)  
0.115 (2.93)  
0.012 (0.30)  
0.008 (0.20)  
0.100 (2.54)  
0.015 (0.38)  
0.025 (0.63)  
0.020 (0.51)  
0.100 [2.54]  
0.020 (0.50)  
0.016 (0.41)  
15°  
0.035 (0.88)  
0.006 (0.16)  
0.100 (2.54)  
0.020 (0.50)  
0.016 (0.41)  
0.012 (0.30)  
0.4" Lead Spacing  
Recommended Pad Layout for  
Surface Mount Leadform  
0.350 (8.89)  
0.320 (8.13)  
0.070 (1.78)  
PIN 1 ID  
0.060 (1.52)  
0.260 (6.60)  
0.240 (6.10)  
0.425 (10.79)  
0.100 (2.54)  
0.305 (7.75)  
0.030 (0.76)  
0.070 (1.77)  
0.040 (1.02)  
0.014 (0.36)  
0.010 (0.25)  
0.200 (5.08)  
0.115 (2.93)  
0.100 (2.54)  
0.015 (0.38)  
0.012 (0.30)  
0.008 (0.21)  
0.100 [2.54]  
0.020 (0.50)  
0.016 (0.41)  
0.425 (10.80)  
0.400 (10.16)  
Note:  
All dimensions are in inches (millimeters)  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
6
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
4N25M  
4N25SM  
Standard Through Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
4N25SR2M  
4N25TM  
V
4N25VM  
VDE 0884  
TV  
4N25TVM  
4N25SVM  
4N25SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
4N25  
V X YY Q  
6
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code, e.g., ‘7’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with  
date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
7
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
20  
33 Sec  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
8
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an  
exhaustive list of all such trademarks.  
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TinyLogic®  
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TinyWire¥  
TruTranslation¥  
PSerDes¥  
UHC®  
UniFET¥  
VCX¥  
Wire¥  
HiSeC¥  
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Programmable Active Droop¥  
QFET®  
QS¥  
QT Optoelectronics¥  
Quiet Series¥  
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ScalarPump¥  
SMART START¥  
SPM®  
STEALTH™  
SuperFET¥  
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SuperSOT¥-6  
SuperSOT¥-8  
SyncFET™  
Across the board. Around the world.¥  
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S  
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,  
which, (a) are intended for surgical implant into the body or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
device, or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In Design  
This datasheet contains the design specifications for product  
development. Specifications may change in any manner without notice.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains preliminary data; supplementary data will be  
published at a later date. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains final specifications. Fairchild Semiconductor  
reserves the right to make changes at any time without notice to improve  
design.  
This datasheet contains specifications on a product that has been  
discontinued by Fairchild Semiconductor. The datasheet is printed for  
reference information only.  
Rev. I24  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
9
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The general purpose optocouplers consist of a gallium arsenide infrared  
emitting diode driving a silicon phototransistor in a 6-pin dual-in-line  
package.  
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Features  
z
z
UL recognized (File #E90700, Volume 2)  
VDE recognized (File #102497)  
{ Add option V (e.g. 4N25VM)  
back to top  
Applications  
z
z
z
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
back to top  
Product status/pricing/packaging  
Product  
H11A3FM  
Product status  
Pb-free Status  
Pricing*  
N/A  
Package type  
Leads  
Packing method  
Lifetime Buy  
DIP-W  
6
BULK  
H11A3FR2M  
H11A3FR2VM  
H11A3FVM  
Lifetime Buy  
Lifetime Buy  
Lifetime Buy  
N/A  
N/A  
N/A  
SMDIP-W  
SMDIP-W  
DIP-W  
6
6
6
TAPE REEL  
TAPE REEL  
BULK  
H11A3M  
Full Production  
Full Production  
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Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
$0.229  
$0.165  
$0.206  
$0.206  
$0.165  
$0.165  
$0.165  
$0.165  
DIP-W  
SMDIP-W  
SMDIP-W  
SMDIP-W  
SMDIP-W  
DIP-W  
6
6
6
6
6
6
6
6
BULK  
BULK  
H11A3SM  
H11A3SR2M  
H11A3SR2VM  
H11A3SVM  
H11A3TM  
TAPE REEL  
TAPE REEL  
BULK  
BULK  
H11A3TVM  
H11A3VM  
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H11A3FM  
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H11A3FR2VM  
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H11A3SR2VM  
H11A3SVM  
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