4N33M [FAIRCHILD]
General Purpose 6-Pin Photodarlington Optocoupler; 通用6引脚光电复合光耦
| 型号： | 4N33M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | General Purpose 6-Pin Photodarlington Optocoupler |
| 文件： | 总10页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2007
4N29M, 4N30M, 4N32M, 4N33M, H11B1M,TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
tm
Features
Description
■ High sensitivity to low input drive current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
■ Meets or exceeds all JEDEC Registered
Specifications
■ UL, C-UL approved
■ VDE 0884 approval available as a test option
– add option V (e.g., 4N29VM)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Packages
Schematic
6
6
ANODE 1
6 BASE
1
1
CATHODE
N/C
COLLECTOR
2
3
5
4
6
1
EMITTER
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)
A
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Lead Solder Temperature (Wave)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
3.3
EMITTER
I
Continuous Forward Current
Reverse Voltage
80
3
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
150
2.0
A
F
P
LED Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
30
30
V
V
CEO
CBO
ECO
5
V
P
Detector Power Dissipation @ T = 25°C
150
2.0
150
mW
mW/°C
mA
D
A
Derate above 25°C
I
Continuous Collector Current
C
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Device
Min.
Typ. Max. Unit
V
Input Forward Voltage*
I = 10mA
4NXXM
1.2
1.2
1.5
1.5
V
F
F
H11B1M,
TIL113M
0.8
I
Reverse Leakage Current*
Capacitance*
V
V
= 3.0V
= 6.0V
4NXXM
0.001
0.001
100
10
µA
R
R
R
H11B1M,
TIL113M
C
V = 0V, f = 1.0MHz
All
150
60
pF
V
F
DETECTOR
BV
Collector-Emitter Breakdown Voltage* I = 1.0mA, I = 0
4NXXM,
TIL113M
30
CEO
C
B
H11B1M
All
25
30
5.0
7
60
100
10
BV
BV
Collector-Base Breakdown Voltage*
I
= 100µA, I = 0
V
V
CBO
ECO
C
E
Emitter-Collector Breakdown Voltage* I = 100µA, I = 0
4NXXM
E
B
H11B1M,
TIL113M
10
I
Collector-Emitter Dark Current*
V
= 10V, Base Open
CE
All
1
100
nA
CEO
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
(1, 2)
I
Collector Output Current*
I = 10mA, V = 10V,
4N32M,
4N33M
50 (500)
mA (%)
C(CTR)
F
B
CE
I
= 0
4N29M, 10 (100)
4N30M
I = 1mA, V = 5V
H11B1M
5 (500)
F
CE
I = 10mA, V = 1V
TIL113M 30 (300)
4NXXM
F
CE
(2)
V
Saturation Voltage*
I = 8mA, I = 2.0mA
1.0
1.25
1.0
V
CE(SAT)
F
C
TIL113M
I = 1mA, I = 1mA
H11B1M
F
C
AC CHARACTERISTICS
t
Turn-on Time
I = 200mA, I = 50mA,
4NXXM,
TIL113M
5.0
µS
µS
on
F
C
V
= 10V, R = 100Ω
CC
L
I = 10mA, V = 10V,
H11B1M
25
F
CE
R = 100Ω
L
t
Turn-off Time
I = 200mA, I = 50mA,
4N32M,
4N33M,
TIL113M
100
40
off
F
C
V
= 10V, R = 100Ω
CC
L
4N29M,
4N30M
I = 10mA, V = 10V,
H11B1M
18
30
F
CE
R = 100Ω
L
(3, 4)
BW
kHz
Bandwidth
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
3
Electrical Characteristics (T = 25°C Unless otherwise specified.) (Continued)
A
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Device Min. Typ. Max.
Units
Vac(peak)
V
(5)
V
Input-Output Isolation Voltage
I
≤ 1µA, Vrms, t = 1sec.
I-O
All
4N32M*
4N33M*
All
7500
2500
1500
ISO
VDC
VDC
(5)
11
R
C
Isolation Resistance
V
V
= 500VDC
10
Ω
ISO
ISO
I-O
I-O
(5)
Isolation Capacitance
= Ø, f = 1MHz
All
0.8
pF
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.
C F
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
3. I adjusted to I = 2.0mA and I = 0.7mA rms.
F
C
C
4. The frequency at which I is 3dB down from the 1kHz value.
C
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
= 25°C
Normalized to
= 10 mA
CE
I
A
F
T
T
T
= -55°C
= 25°C
= 100°C
A
A
A
0
2
4
6
8
10
12
14
16
18
20
1
10
100
I
- LED FORWARD CURRENT (mA)
F
I - FORWARD CURRENT (mA)
F
Fig. 3 Normalized CTR vs. Ambient Temperature
Fig. 4 CTR vs. RBE (Unsaturated)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 20 mA
F
V
= 5.0 V
CE
Normalized to
= 10 mA
I
F
T
= 25°C
A
-60
-40
-20
0
20
40
60
80
100
10
100
1000
T
- AMBIENT TEMPERATURE (°C)
R - BASE RESISTANCE (kΩ)
BE
A
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
10
1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 25˚C
A
V = 0.3 V
CE
I
= 20 mA
= 10 mA
F
I
= 2.5 mA
F
I
F
0.1
0.01
I
= 5 mA
F
I
= 20 mA
F
I
= 5 mA
F
I
= 10 mA
F
0.001
0.01
0.1
1
10
10
100
1000
I
- COLLECTOR CURRENT (mA)
R
BE
- BASE RESISTANCE (k Ω)
C
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on BE
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
F
V
10 V
CC =
= 10 V
CC
= 25°C
I
R
= 2 mA
= 100 Ω
C
L
A
100
10
1
T
off
T
f
T
on
T
r
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R-LOAD RESISTOR (kΩ)
- BASE RESISTANCE (k Ω)
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
T
= 10 V
CE
A
= 25°
C
1
V
10 V
= 2 mA
= 100 Ω
CC =
I
C
L
0.1
R
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
R - BASE RESISTANCE (k Ω)
BE
T
- AMBIENT TEMPERATURE (°C)
A
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
6
Package Dimensions
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
Pin 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.100 (2.54)
0.015 (0.38)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
0.020 (0.50)
0.016 (0.41)
15°
0.100 (2.54)
0.012 (0.30)
0.4" Lead Spacing
Recommended Pay Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
0.070 (1.77)
0.040 (1.02)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.014 (0.36)
0.010 (0.25)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
7
Ordering Information
Suffix
Example
Option
No Suffix
4N32M
4N32SM
Standard Through Hole Device
S
SR2
T
Surface Mount Lead Bend
Surface Mount; Tape and reel
0.4" Lead Spacing
4N32SR2M
4N32TM
V
4N32VM
VDE 0884
TV
4N32TVM
4N32SVM
4N32SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape & Reel
SV
SR2V
Marking Information
1
2
4N29
6
V X YY Q
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
8
Tape Dimensions
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
4.0 ± 0.1
0.30 ± 0.05
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
User Direction of Feed
0.1 MAX
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
300
280
260
240
220
200
180
160
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
140
120
100
80
60
40
20
0
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
9
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I27
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
10
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