4N25SR2VM [FAIRCHILD]
General Purpose 6-Pin Phototransistor Optocouplers; 通用6引脚光电晶体管光耦合器型号: | 4N25SR2VM |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | General Purpose 6-Pin Phototransistor Optocouplers |
文件: | 总9页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
March 2007
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
tm
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
Description
■ UL recognized (File # E90700, Volume 2)
■ VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Functional Block Diagram
1
6
5
4
6
6
2
1
1
3
NC
6
PIN 1. ANODE
2. CATHODE
1
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-55 to +150
-55 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Wave solder temperature (see page 8 for reflow solder profile)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
D
A
Derate above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
F
P
LED Power Dissipation @ T = 25°C
120
1.41
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
30
70
V
V
CEO
CBO
ECO
7
V
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
D
A
Derate above 25°C
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.* Max. Unit
V
Input Forward Voltage
I = 10mA
1.18
1.50
10
V
F
F
I
Reverse Leakage Current
V = 6.0V
0.001
µA
R
R
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I = 1.0mA, I = 0
30
70
7
100
120
10
V
V
CEO
CBO
ECO
C
F
I = 100µA, I = 0
C
F
I = 100µA, I = 0
V
E
F
I
I
V
V
V
= 10V, I = 0
1
50
20
nA
nA
pF
CEO
CBO
CE
CB
CE
F
= 10V
C
= 0V, f = 1 MHz
8
CE
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min. Typ.* Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60Hz, t = 1 sec
7500
Vac(pk)
Ω
ISO
ISO
ISO
11
V
V
= 500 VDC
10
I-O
I-O
Isolation Capacitance
= &, f = 1MHz
0.2
2
pF
*Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
2
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)
A
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10mA, V = 10V
4N35M, 4N36M,
4N37M
100
%
F
CE
H11A1M
H11A5M
50
30
20
4N25M, 4N26M
H11A2M, H11A3M
4N27M, 4N28M
H11A4M
10
40
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
F
CE
T = -55°C
A
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
40
F
CE
T = +100°C
A
V
Collector-Emitter
Saturation Voltage
I
= 2mA, I = 50mA
4N25M, 4N26M,
4N27M, 4N28M,
0.5
0.3
0.4
V
CE (SAT)
C
F
I
= 0.5mA, I = 10mA
4N35M, 4N36M,
4N37M
C
F
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
T
Non-Saturated
Turn-on Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2
µs
ON
F
CC
R = 100Ω (Fig. 11)
L
I
= 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
2
10
10
µs
µs
C
CC
R = 100Ω (Fig. 11)
L
T
Turn-off Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
OFF
F
CC
R = 100Ω (Fig. 11)
L
I
= 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
C
CC
R = 100Ω (Fig. 11)
L
* Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
3
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
Fig.2 Normalized CTR vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
= 25°C
Normalized to
= 10 mA
CE
I
A
F
T
T
T
= -55°C
= 25°C
= 100°C
A
A
A
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I
- LED FORWARD CURRENT (mA)
I - FORWARD CURRENT (mA)
F
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 mA
F
1.2
1.0
0.8
0.6
0.4
0.2
I
= 5 mA
I
= 10 mA
F
F
I
= 5 mA
F
I
= 10 mA
F
I
= 20 mA
F
V
= 5.0 V
CE
Normalized to
I
= 10 mA
F
T
= 25°C
A
-60
-40
-20
0
20
40
60
80
100
10
100
1000
R - BASE RESISTANCE (kΩ)
BE
T
- AMBIENT TEMPERATURE (°C)
A
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 25˚C
A
V
= 0.3 V
CE
I
= 20 mA
= 10 mA
F
1
I
I = 2.5 mA
F
F
0.1
I
= 5 mA
F
I
= 20 mA
F
0.01
I
= 5 mA
F
I
= 10 mA
F
0.001
10
100
1000
0.01
0.1
1
10
R
BE
- BASE RESISTANCE (k Ω)
I
- COLLECTOR CURRENT (mA)
C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
4
Fig. 8 Normalized t vs. R
Fig. 7 Switching Speed vs. Load Resistor
on
BE
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
= 10 mA
F
V
10 V
= 2 mA
= 100 Ω
CC =
V
= 10 V
CC
= 25°C
I
C
L
T
A
R
T
off
T
f
T
on
1
T
r
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R-LOAD RESISTOR (kΩ)
- BASE RESISTANCE (k Ω)
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
T
= 10 V
CE
A
= 25°
C
1
V
10 V
= 2 mA
= 100 Ω
CC =
I
C
L
0.1
R
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
T
- AMBIENT TEMPERATURE (°C)
A
R - BASE RESISTANCE (k Ω)
BE
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
5
Package Dimensions
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
Pin 1 ID
PIN 1 ID
0.390 (9.90)
0.332 (8.43)
0.260 (6.60)
0.240 (6.10)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.014 (0.36)
0.010 (0.25)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.100 (2.54)
0.015 (0.38)
0.025 (0.63)
0.020 (0.51)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
15°
0.035 (0.88)
0.006 (0.16)
0.100 (2.54)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
0.4" Lead Spacing
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
0.070 (1.78)
PIN 1 ID
0.060 (1.52)
0.260 (6.60)
0.240 (6.10)
0.425 (10.79)
0.100 (2.54)
0.305 (7.75)
0.030 (0.76)
0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.020 (0.50)
0.016 (0.41)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
6
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
4N25M
4N25SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
4N25SR2M
4N25TM
V
4N25VM
VDE 0884
TV
4N25TVM
4N25SVM
4N25SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
4N25
V X YY Q
6
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with
date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
7
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
20
33 Sec
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
8
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an
exhaustive list of all such trademarks.
ACEx®
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyWire¥
TruTranslation¥
PSerDes¥
UHC®
UniFET¥
VCX¥
Wire¥
HiSeC¥
i-Lo¥
Programmable Active Droop¥
QFET®
QS¥
QT Optoelectronics¥
Quiet Series¥
RapidConfigure¥
RapidConnect¥
ScalarPump¥
SMART START¥
SPM®
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SyncFET™
Across the board. Around the world.¥
ActiveArray¥
Bottomless¥
Build it Now¥
CoolFET¥
ImpliedDisconnect¥
IntelliMAX¥
ISOPLANAR¥
MICROCOUPLER¥
MicroPak¥
MICROWIRE¥
MSX¥
CROSSVOLT¥
CTL™
Current Transfer Logic™
DOME¥
MSXPro¥
OCX¥
E2CMOS¥
EcoSPARK®
EnSigna¥
OCXPro¥
OPTOLOGIC®
OPTOPLANAR®
PACMAN¥
POP¥
FACT Quiet Series™
FACT®
FAST®
Power220®
Power247®
PowerEdge¥
PowerSaver¥
PowerTrench®
FASTr¥
TCM¥
The Power Franchise®
™
FPS¥
FRFET®
GlobalOptoisolator¥
GTO¥
TinyBoost¥
TinyBuck¥
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I24
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
9
相关型号:
©2020 ICPDF网 联系我们和版权申明