2SC5200RTU [FAIRCHILD]

NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
2SC5200RTU
型号: 2SC5200RTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN Epitaxial Silicon Transistor
NPN外延硅晶体管

晶体 晶体管 功率双极晶体管 放大器 局域网
文件: 总6页 (文件大小:214K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
March 2008  
2SC5200/FJL4315  
NPN Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = 15A.  
High Power Dissipation : 150watts.  
High Frequency : 30MHz.  
TO-264  
1.Base 2.Collector 3.Emitter  
1
High Voltage : VCEO=230V  
Wide S.O.A for reliable operation.  
Excellent Gain Linearity for low THD.  
Complement to 2SA1943/FJL4215.  
Thermal and electrical Spice models are available.  
Same transistor is also available in:  
-- TO3P package, 2SC5242/FJA4313 : 130 watts  
-- TO220 package, FJP5200 : 80 watts  
-- TO220F package, FJPF5200 : 50 watts  
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
230  
230  
5
V
V
V
A
A
15  
IB  
1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
150  
1.04  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
0.83  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
1
Electrical Characteristics* T =25°C unless otherwise noted  
a
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
IC=5mA, IE=0  
Min. Typ. Max. Units  
230  
230  
5
V
V
IC=10mA, RBE=∞  
IE=5mA, IC=0  
V
VCB=230V, IE=0  
VEB=5V, IC=0  
5.0  
5.0  
µA  
µA  
IEBO  
Emitter Cut-off Current  
hFE1  
DC Current Gain  
VCE=5V, IC=1A  
VCE=5V, IC=7A  
IC=8A, IB=0.8A  
VCE=5V, IC=7A  
VCE=5V, IC=1A  
VCB=10V, f=1MHz  
55  
35  
160  
hFE2  
DC Current Gain  
60  
0.4  
1.0  
30  
VCE(sat)  
VBE(on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
3.0  
1.5  
V
V
Current Gain Bandwidth Product  
Output Capacitance  
MHz  
pF  
Cob  
200  
* Pulse Test: Pulse Width=20µs, Duty Cycle2%  
Ordering Information  
Part Number  
2SC5200RTU  
2SC5200OTU  
FJL4315RTU  
FJL4315OTU  
Marking  
C5200R  
C5200O  
J4315R  
Package  
TO-264  
Packing Method  
Remarks  
hFE1 R grade  
hFE1 O grade  
hFE1 R grade  
hFE1 O grade  
TUBE  
TUBE  
TUBE  
TUBE  
TO-264  
TO-264  
J4315O  
TO-264  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
2
Typical Characteristics  
16  
14  
12  
10  
8
IB=200mA  
IB = 180mA  
IB = 160mA  
Tj=125oC  
Tj=25oC  
Vce=5V  
IB = 140mA  
IB = 120mA  
100  
10  
1
Tj=-25oC  
IB = 100mA  
IB = 80mA  
IB = 60mA  
IB = 40mA  
6
4
2
IB = 0  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Ic[A], COLLECTORCURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10000  
1000  
100  
10000  
1000  
100  
10  
Ic=10Ib  
Ic=10Ib  
Tj=25?  
Tj=25oC  
Tj=-25oC  
Tj=125?  
Tj=-25?  
Tj=125oC  
1
0.1  
0.1  
1
10  
1
10  
Ic[A], COLLECTOR CURRENT  
Ic[A], COLLECTORCURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Collector-Emitter Saturation Voltage  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
12  
VCE = 5V  
10  
8
6
4
2
0
0.0  
1E-6  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Pulse duration [sec]  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Thermal Resistance  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
3
Typical Characteristics  
100  
10  
160  
140  
120  
100  
80  
IC MAX. (Pulsed*)  
IC MAX. (DC)  
10ms*  
100ms*  
DC  
1
60  
0.1  
0.01  
40  
*SINGLE NONREPETITIVE  
PULSE TC=25[oC]  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
TC[oC], CASE TEMPERATURE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Power Derating  
Figure 8. Safe Operating Area  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
4
Package Dimensions  
TO-264  
20.00 0.20  
(8.30) (8.30)  
(2.00)  
(1.00)  
(R2.00)  
(0.50)  
ø3.30  
0.20  
(R1.00)  
(7.00)  
(7.00)  
4.90 0.20  
(1.50)  
(1.50)  
(1.50)  
2.50 0.20  
3.00 0.20  
+0.25  
1.00  
–0.10  
+0.25  
–0.10  
0.60  
2.80 0.30  
5.45TYP  
5.45TYP  
[5.45 0.30  
]
[5.45 0.30]  
Dimensions in Millimeters  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
5
TRADEMARKS  
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and  
is not intended to be an exhaustive list of all such trademarks.  
ACEx®  
Green FPS™  
Green FPS™ e-Series™  
GTO™  
i-Lo™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Power247®  
SuperSOT™-8  
SyncFET™  
Build it Now™  
CorePLUS™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
POWEREDGE®  
Power-SPM™  
PowerTrench®  
Programmable Active Droop™  
QFET®  
The Power Franchise®  
TinyBoost™  
TinyBuck™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
µSerDes™  
UHC®  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
SMART START™  
SPM®  
STEALTH™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
MicroPak™  
MillerDrive™  
Motion-SPM™  
OPTOLOGIC®  
FAST®  
FastvCore™  
FPS™  
OPTOPLANAR®  
®
UniFET™  
VCX™  
FRFET®  
PDP-SPM™  
Power220®  
Global Power ResourceSM  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE  
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF  
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE  
PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to result  
in significant injury to the user.  
2.  
A critical component is any component of a life support  
device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice.  
Advance Information  
Formative or In Design  
This datasheet contains preliminary data; supplementary data will be pub-  
lished at a later date. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve design.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains final specifications. Fairchild Semiconductor reserves  
the right to make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I31  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
6

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