2N5952_NL [FAIRCHILD]
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN;
| 型号： | 2N5952_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN |
| 文件： | 总3页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5952
N-Channel RF Ampifier
•
This device is designed primarily for electronic switching applications
such as low on resistance analog switching.
Sourced from process 50.
•
TO-92
1. Gate 2. Source 3. Drain
1
Absolute Maximum Ratings * T =25°C unless otherwise noted
C
Symbol
Parameter
Value
30
Units
V
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
V
V
DG
GS
-30
I
10
mA
°C
GF
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
-30
Typ.
Max.
Units
Off Characteristics
V
Gate-Source Breakdown Voltage
Gate Reverse Current
V
V
V
= 0, I = -1.0µA
V
nA
V
(BR)GSS
GSS
DS
GS
DS
G
I
= -15V, V = 0
-1.0
-3.5
DS
V
Gate-Source Cutoff Voltage
= 15V, I = 100nA
-1.3
4.0
GS(off)
D
On Characteristics
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
I
V
= 15V, V = 0
8.0
mA
DSS
DS
GS
g
g
Forward Transfer Conductance
Output Conductance
Input Capacitance
V
V
V
V
V
= 15V, V = 0, f = 1.0kHz
2000
6500 µmhos
fs
DS
DS
DS
DS
DS
GS
= 15V, V = 0, f = 100MHz
75
6.0
2.0
2.0
µmhos
pF
os
GS
C
C
= 15V, V = 0, f = 1.0MHz
GS
iss
rss
Reverse Transfer Capacitance
Noise Figure
= 15V, V = 0, f = 1.0MHz
pF
GS
NF
= 15V, R = 1.0kΩ,
dB
G
f = 1.0kHz
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
θJC
θJA
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
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POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
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QFET™
SuperSOT™-3
SuperSOT™-6
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Across the board. Around the world.™
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MSXPro™
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OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
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UHC™
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SILENT SWITCHER® VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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