2N5307 [FAIRCHILD]
NPN Darlington Transistor; NPN达林顿晶体管
| 型号： | 2N5307 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Darlington Transistor |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N5307
TO-92
C
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
12
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
A
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5307
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
NPN Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC =10 mA, IB = 0
40
40
12
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 0.1 µA, IE = 0
IE = 0.1 µA, IC = 0
VCB = 40 V, IE = 0
0.1
20
0.1
µA
µA
µA
VCB = 40 V, IE = 0, TA = 100 °C
IEBO
Emitter Cutoff Current
VEB = 12 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 2.0 mA
2,000
6,000
20,000
VCE = 5.0 V, IC = 100 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 200 mA, IB = 0.2 mA
IC = 200 mA, IB = 0.2 mA
IC = 200 mA, VCE = 5.0 V
1.4
1.6
1.5
V
V
V
VCE(sat)
VBE(sat)
VBE(on)
SMALL SIGNAL CHARACTERISTICS
Collector-Base Capacitance
VCB = 10 V, f = 1.0 MHz
10
pF
Ccb
Small-Signal Current Gain
IC =2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
hfe
2,000
6.0
IC =2.0 mA, VCE = 5.0 V,
f = 10 MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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