2N4403TFR [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | 2N4403TFR |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总7页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4403
MMBT4403
C
E
TO-92
C
B
SOT-23
Mark: 2T
B
E
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
600
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4403
*MMBT4403
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4403/MMBT4403, Rev. C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
40
V
Voltage*
V(BR)CBO
V(BR)EBO
IBEX
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
40
V
V
Emitter-Base Breakdown Voltage
Base Cutoff Current
IE = 0.1 A, IC = 0
5.0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VBE = 0.4 V
0.1
0.1
µA
µA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 2.0 V*
IC = 500 mA, VCE = 2.0 V*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
30
60
100
100
20
300
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
0.4
0.75
0.95
1.3
V
V
V
V
VCE(sat)
VBE(sat)
0.75
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
200
MHz
pF
8.5
30
Ccb
Ceb
hie
hre
hfe
hoe
pF
1.5
0.1
60
15
kΩ
x 10-4
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
8.0
500
100
1.0
µmhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
15
20
ns
ns
ns
ns
td
tr
VCC = 30 V, IC = 150 mA
IB1 = IB2 = 15 mA
225
30
ts
tf
*Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
500
400
300
200
100
0
0.5
0.4
0.3
0.2
0.1
VCE = 5V
β = 10
125 °C
25 °C
25 °C
125 °C
- 40 °C
- 40 °C
0
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125°C
β = 10
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C- COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
16
12
8
100
10
V
= 35V
CB
C
ib
1
0.1
C
ob
4
0.01
0
25
50
75
100
125
0.1
1
10
50
TA- AMBIE NT TEMP ERATURE ( C)
REVERSE BIAS VOLTAGE (V)
°
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
250
500
I
I
c
c
IB1= IB2
=
IB1= IB2=
10
10
400
300
200
100
0
200
150
100
50
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
t
off
r
t
on
t
d
0
10
10
100
- COLLECTOR CURRENT (mA)
1000
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Power Dissipation vs
Ambient Temperature
Rise Time vs Collector
and Turn On Base Currents
1
0.75
0.5
50
SOT-223
20
10
5
TO-92
t
= 15 V
r
SOT-23
30 ns
0.25
0
2
1
60 ns
10
100
500
0
25
50
75
100
125
150
TEMPERATURE (oC)
I
- COLLECTOR CURRENT (mA)
C
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitter Characteristics
Common Emitter Characteristics
5
1.3
1.2
1.1
1
h
oe
h
h
h
h
re
ie
h
and h
oe
fe
h
2
1
re
re
oe
h
fe
h
0.5
ie
h
ie
0.9
0.8
I
T
= -10mA
= 25oC
A
V
T
= -10 V
0.2
C
CE
= 25oC
h
fe
A
0.1
_
_
_
_
_
_
1
2
5
10
20
50
-4
-8
-12
-16
-20
I C - COLLECTOR CURRENT (mA)
VCE- COLLECTOR VOLTAGE (V)
Common Emitter Characteristics
1.5
1.4
1.3
1.2
1.1
1
I
V
= -10mA
= -10 V
h
h
h
h
C
fe
ie
CE
re
oe
h
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h
fe
-40
-20
0
20
40
60
80
100
T A - AMBIENT TEMPERATURE (oC)
PNP General Purpose Amplifier
(continued)
Test Circuits
- 30 V
200 Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
1.5 V
1 KΩ
37 Ω
NOTE: BVEBO = 5.0 V
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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