2N4401 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N4401 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N4401
MMBT4401
C
E
TO-92
C
B
SOT-23
Mark: 2X
B
E
NPN General Purpose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced from
Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
60
V
V
V
A
6.0
Collector Current - Continuous
1.0
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4401
*MMBT4401
PD
Total Device Dissipation
Derate above 25 C
625
5.0
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
40
60
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
IC = 0.1 mA, IE = 0
IE = 0.1 mA, IC = 0
6.0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
0.1
0.1
A
A
µ
µ
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
20
40
80
100
40
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.4
0.75
0.95
1.2
V
VCE(sat)
VBE(sat)
V
V
V
0.75
250
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
MHz
pF
6.5
30
Ccb
Ceb
hie
hre
hfe
hoe
pF
1.0
0.1
40
15
k
Ω
x 10-4
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
8.0
500
30
1.0
mhos
µ
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, VEB = 0.2 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA
IB1 = IB2 = 15 mA
15
20
ns
ns
ns
ns
td
tr
225
30
ts
tf
*Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%
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