2N4401TFR_NL [FAIRCHILD]
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN;
| 型号： | 2N4401TFR_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总7页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4401
MMBT4401
C
E
TO-92
C
B
SOT-23
Mark: 2X
B
E
NPN General Pupose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
Absolute Maximum Ratings*
TA= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
60
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
600
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4401
*MMBT4401
PD
Total Device Dissipation
Derate above 25 C
625
5.0
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4401/MMBT4401, Rev A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
40
60
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
IC = 0.1 mA, IE = 0
IE = 0.1 mA, IC = 0
6.0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
0.1
0.1
A
A
µ
µ
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
20
40
80
100
40
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.4
0.75
0.95
1.2
V
VCE(sat)
VBE(sat)
V
V
V
0.75
250
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
MHz
pF
6.5
30
Ccb
Ceb
hie
hre
hfe
hoe
3
pF
1.0
0.1
40
15
k
Ω
x 10-4
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
8.0
500
30
1.0
mhos
µ
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, VEB = 2 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA
IB1 = IB2 = 15 mA
15
20
ns
ns
ns
ns
td
tr
225
30
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.4
V
= 5V
CE
β = 10
0.3
0.2
0.1
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
β = 10
V
= 5V
1
CE
- 40 °C
25 °C
- 40 °C
0.8
0.6
0.4
25 °C
125 °C
125 °C
1
10
100
500
0.1
1
10
25
I
C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
te
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
REVERSE BIAS VOLTAGE (V)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Turn On and Turn Off Times
Switching Times
vs Collector Current
vs Collector Current
400
400
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
320
240
160
80
320
240
160
80
V
= 25 V
V
= 25 V
cc
cc
t
s
t
r
t
off
t
f
t
on
t
d
0
0
10
100
1000
10
100
1000
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
C
Power Dissipation vs
Ambient Temperature
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitter Characteristics
Common Emitter Characteristics
2.4
2
8
6
4
2
0
V
I
= 10 V
= 10 mA
V
T
= 10 V
= 25oC
CE
CE
h
C
A
re
h
ie
h
fe
1.6
1.2
0.8
0.4
0
h
oe
h
oe
h
h
re
fe
h
ie
0
10
20
30
40
50
60
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (o C)
I C - COLLECTOR CURRENT (mA)
Common Emitter Characteristics
1.3
1.25
1.2
I
T
= 10 mA
= 25oC
C
A
h
fe
1.15
1.1
h
ie
1.05
1
h
h
0.95
0.9
re
0.85
0.8
oe
0.75
0
5
10
15
20
25
30
35
VCE - COLLECTOR VOLTAGE (V)
NPN General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
16 V
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Timer
6.0 V
- 1.5 V
NOTE: BVEBO= 5.0 V
37 Ω
1k
30 V
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FAST
DISCLAIMER
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
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DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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