2N4124 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N4124 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
2N4124
MMBT4124
C
E
TO-92
C
B
B
SOT-23
Mark: ZC
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23. See 2N3904
for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
25
30
V
V
5.0
V
Collector Current - Continuous
200
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4124
*MMBT4124
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
200
357
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IC = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
25
30
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
5.0
V
50
50
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
120
60
360
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.3
V
V
VCE(sat)
VBE(sat)
IC = 50 mA, IB = 5.0 mA
0.95
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VBE = 0.5 V, IC = 0,
f = 1.0 kHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
300
120
MHz
pF
Output Capacitance
4.0
8.0
4.0
480
5.0
Cobo
Cibo
Ccb
hfe
Input Capacitance
pF
Collector-Base Capcitance
Small-Signal Current Gain
Noise Figure
pF
VCE = 10 V, IC = 2.0 mA,
f = 1.0 kHz
IC = 100 µA, VCE = 5.0 V,
NF
dB
RS =1.0kΩ, f=10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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