2N4123 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N4123 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
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2N4123
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 23. See 2N3904 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
30
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4123
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
30
40
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
5.0
V
50
50
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 2.0 mA
50
25
150
V
CE = 1.0 V, IC = 50 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.3
V
V
VCE
(sat)
IC = 50 mA, IB = 5.0 mA
0.95
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 5.0 V, f = 100 kHz
VEB = 0.5 V, f = 0.1 MHz
4.0
8.0
pF
pF
Cob
Cib
hfe
Input Capacitance
Small-Signal Current Gain
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
50
200
IC = 10 mA, VCE = 20 V,
f = 100 MHz
2.5
Current Gain - Bandwidth Product
Noise Figure
IC = 10 mA, VCE = 20 V
f = 100 MHz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
250
MHz
dB
fT
NF
6.0
BW = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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