2N3859A [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N3859A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N3859A
TO-92
E
C
B
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
60
60
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3859A
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
60
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 18 V, IE = 0
VEB = 4.0 V, IC = 0
6.0
V
0.5
0.5
µA
µA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 1.0 mA
75
V
CE = 1.0 V, IC = 10 mA
100
200
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, f = 1.0 MHz
IC = 2.0 mA, VCE = 10 V
4
pF
MHz
pS
Cob
fT
Current Gain - Bandwidth Product
Collector - Base Time Constant
90
250
150
VCE = 10 V, IC = 2.0 mA,
f = 31.9 MHz
rb’Cc
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
相关型号：
2N3859A-18F
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N3859A-18FLEADFREE
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N3859A-5T
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3 PIN
CENTRAL
2N3859A-5T1
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
2N3859AAPMLEADFREE
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CENTRAL
2N3859AAPPLEADFREE
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CENTRAL
2N3859AD26Z
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明