1N916BT50A [FAIRCHILD]
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35;
| 型号： | 1N916BT50A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
100
200
V
Average Rectified Forward Current
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
Storage Temperature Range
-65 to +200
C
Tstg
TJ
°
Operating Junction Temperature
175
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Characteristic
Max
Units
1N/FDLL 914/A/B / 4148 / 4448
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
500
300
mW
RθJA
°C/W
2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
Small Signal Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
VR
Breakdown Voltage
100
75
V
V
IR = 100 µA
IR = 5.0 µA
VF
Forward Voltage
IF = 5.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 20 mA
IF = 20 mA
IF = 100 mA
VR = 20 V
VR = 20 V, TA = 150°C
620
630
720
730
1.0
1.0
1.0
1.0
25
mV
mV
V
V
V
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
V
1N914B/4448
IR
Reverse Current
nA
µA
µA
50
5.0
V
R = 75 V
CT
trr
Total Capacitance
V
V
R = 0, f = 1.0 MHz
R = 0, f = 1.0 MHz
2.0
4.0
4.0
pF
pF
ns
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
IF = 10 mA, VR = 6.0 V (60mA),
Irr = 1.0 mA, RL = 100Ω
Typical Characteristics
160
120
Ta=25 oC
Ta= 25 oC
100
80
60
40
20
0
150
140
130
120
110
10
20
70
100
Reverse V3o0ltage, VR [5V0]
1
2
3
5
10
20
30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Current, IR [uA]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
550
750
Ta= 25 oC
Ta= 25 oC
500
450
400
350
300
250
700
650
600
550
500
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
Small Signal Diode
(continued)
Typical Characteristics (continued)
900
800
700
600
500
400
300
1.6
Ta= 25 o
C
Typical
Ta= -40 oC
1.4
1.2
1.0
0.8
0.6
Ta= 25 oC
Ta= +65 oC
3
0.01
0.1
0.3
1
10
0.03
10
20
30
50
100
200 300
500
800
Forward Current, IF [mA]
Forward Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
Figure 6. Forward Voltage
vs Ambient Temperature
VF - 0.01 - 20 mA (-40 to +65 Deg C)
0.90
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TA = 25 o
C
Ta = 25 oC
0.85
0.80
0.75
10
20
30
40
50
60
0
2
4
6
8
10
12
14
Reverse Recovery Current, Irr [mA]
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
REVERSE VOLTAGE (V)
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
500
400
300
200
100
0
500
400
300
200
100
0
DO-35
SOT-23
0
50
100
150
0
50
100
150
200
Ambient Temperature ( oC)
Temperature [ oC]
Figure 9. Average Rectified Current (IF(AV)
)
Figure 10. Power Derating Curve
versus Ambient Temperature (TA)
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