1N5819 [FAIRCHILD]
1.0 Ampere Schottky Barrier Rectifiers; 1.0安培肖特基势垒整流器型号: | 1N5819 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 1.0 Ampere Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
1N5817 - 1N5819
Features
1.0 min (25.4)
• 1.0 ampere operation at TA = 90°C
with no thermal runaway.
Dimensions in
inches (mm)
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
0.205 (5.21)
0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
protection applications.
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 90°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
1.0
A
if(surge)
25
A
PD
1.25
12.5
80
W
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
RθJA
Tstg
TJ
Storage Temperature Range
-65 to +125
-65 to +125
°C
°C
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
1N5817
20
1N5818
30
1N5819
40
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
14
21
28
20
30
40
DC Reverse Voltage
(Rated VR)
0.5
10
mA
mA
Maximum Reverse Current
@ rated VR
Maximum Forward Voltage
TA = 25°C
TA = 100°C
@ 1.0 A
450
750
550
875
110
600
900
mV
mV
pF
@ 3.0 A
Typical Junction Capacitance
V
R = 4.0 V, f = 1.0 MHz
1998 Fairchild Semiconductor Corporation
Schottky Barrier Rectifiers
(continued)
Typical Characteristics
Forward Current Derating Curve
Forward Characteristics
1
20
10
1N5817
1N5819
1N5818
0.75
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.5
1
.375" 9.5 mm LEAD
0.25
LENGTHS
º
= 25 C
T
J
Pulse Width = 300µS
1% Duty Cycle
0
0
20
40
60
80
100
º
120
140
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
2
LEAD TEMPERATURE ( C)
Non-Repetitive Surge Current
Junction Capacitance
30
25
20
15
10
5
400
200
º
= 25 C
T
J
8.3ms Single Half Sine-Wave
JEDEC Method
100
80
60
40
20
10
0
1
2
5
10
20
50
100
0.1
0.5
1
5
10
40 60 100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE (V)
相关型号:
1N5819-13
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Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALSTIC PACKAGE-2
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1N5819-BP
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MCC
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