ES29LV640FT-80RTG [EXCELSEMI]
8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory; 的8Mbit ( 1M ×8 / 512K ×16 )的CMOS 3.0伏只,引导扇区闪存型号: | ES29LV640FT-80RTG |
厂家: | EXCEL SEMICONDUCTOR INC. |
描述: | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
文件: | 总50页 (文件大小:680K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
E S I
E S I
Excel Semiconductor inc.
ES29LV800D
8Mbit(1M x 8/512K x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125oC
GENERAL FEATURES
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
SOFTWARE FEATURES
• Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 15sectors
• Erase Suspend / Erase Resume
• Data# poll and toggle for Program/erase status
• Unlock Bypass program
• Autoselect mode
• Auto-sleep mode after tACC + 30ns
• Top or Bottom boot block
- ES29LV800DT for Top boot block device
- ES29LV800DB for Bottom boot block device
• Package Options
- 48-pin TSOP
HARDWARE FEATURES
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
DEVICE PERFORMANCE
• Read access time
- 70ns / 90ns / 120ns
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 7mA active read current at 5 MHz
- 15mA active write current during program or erase
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GENERAL PRODUCT DESCRIPTION
The ES29LV800 is completely compatible with the
JEDEC standard command set of single power sup-
ply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
The ES29LV800 is a 8 megabit, 3.0 volt-only flash
memory device, organized as 1M x 8 bits (Byte
mode) or 512K x 16 bits (Word mode) which is con-
figurable by BYTE#. Four boot sectors and fifteen
main sectors are provided : 16Kbytes x 1, 8Kbytes
x 2, 32Kbytes x 1 and 64Kbytes x 15. The device is
manufactured with ESI’s proprietary, high perfor-
mance and highly reliable 0.18um CMOS flash
technology. The device can be programmed or
erased in-system with standard 3.0 Volt Vcc supply
( 2.7V-3.6V) and can also be programmed in stan-
dard EPROM programmers. The device offers min-
imum endurance of 100,000 program/erase cycles
and more than 10 years of data retention.
The ES29LV800 offers access time as fast as 70ns
or 90ns, allowing operation of high-speed micropro-
cessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
All program and erase operation are automatically
and internally performed and controlled by embed-
ded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the num-
ber of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
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PRODUCT SELECTOR GUIDE
Family Part Number
Voltage Range
ES29LV800
2.7 ~ 3.6V
Speed Option
70
70
70
30
90
90
90
35
120
120
120
50
Max Access Time (ns)
CE# Access (ns)
OE# Access (ns)
FUNCTION BLOCK DIAGRAM
RY/BY#
Timer/
Counter
Vcc
Vss
Vcc Detector
DQ0-DQ15(A-1)
Analog Bias
Generator
Input/Output
Buffers
Write
State
Command
Register
WE
#
Machine
RESET#
Data Latch/
Sense Amps
Sector Switches
Y-Decoder
X-Decoder
Y-Decoder
Cell Array
A<0:18>
CE#
OE#
Chip Enable
Output Enable
Logic
BYTE#
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PIN DESCRIPTION
Pin
Description
A0-A18
19 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
DQ15/A-1
CE#
OE#
Chip Enable
Output Enable
WE#
Write Enable
RESET#
BYTE#
RY/BY#
Hardware Reset Pin, Active Low
Selects 8-bit or 16-bit mode
Ready/Busy Output
3.0 volt-only single power supply
(see Product Selector Guide for speed options and voltage supply tolerances)
Vcc
Vss
NC
Device Ground
Pin Not Connected Internally
LOGIC SYMBOL
19
16 or 8
A0 ~ A18
DQ0 ~ DQ15
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
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CONNECTION DIAGRAM
48
47
1
2
3
4
5
A15
A14
A13
A12
A11
A10
A9
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
46
45
44
48-Pin Standard TSOP
6
7
8
43
42
41
DQ13
A8
9
NC
NC
WE#
RESET#
NC
40
39
38
37
36
35
34
DQ5
DQ12
DQ4
Vcc
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
ES29LV800
NC
RY/BY#
A18
A17
A7
33
32
31
30
A6
A5
A4
A3
A2
A1
29
28
27
26
25
CE#
A0
48-Ball FBGA (6 x 8 mm)
(Top View, Balls Facing Down)
A
B
C
D
E
F
G
H
DQ15/
A-1
6
5
A13
A9
A12
A8
BYTE#
DQ14
A14
A10
A16
Vss
A15
A11
DQ7
DQ6
DQ13
Vcc
WE#
NC
NC
DQ4
DQ3
RESET#
NC
DQ5
DQ2
DQ12
DQ10
4
3
RY/
BY#
NC
DQ11
A18
A6
A7
A3
A5
A1
DQ0
A0
A17
A4
DQ8
CE#
DQ9
OE#
DQ1
Vss
2
1
A2
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DEVICE BUS OPERATIONS
on the device address inputs produce valid data on
the device data outputs. The device stays at the read
mode until another operation is activated by writing
commands into the internal command register. Refer
to the AC read cycle timing diagrams for further
details ( Fig. 16 ).
Several device operational modes are provided in
the ES29LV800 device. Commands are used to ini-
tiate the device operations. They are latched and
stored into internal registers with the address and
data information needed to execute the device
operation.
The available device operational modes are listed
in Table 1 with the required inputs, controls, and the
resulting outputs. Each operational mode is
described in further detail in the following subsec-
tions.
Word/Byte Mode Configuration ( BYTE# )
The device data output can be configured by BYTE#
into one of two modes : word and byte modes. If the
BYTE# pin is set at logic ‘1’, the device is configured
in word mode, DQ0 - DQ15 are active and controlled
by CE# and OE#. If the BYTE# pin is set at logic ‘0’,
the device is configured in byte mode, and only data
I/O pins DQ0 - DQ7 are active and controlled by CE#
and OE#. The data I/O pins DQ8 - DQ14 are tri-
stated, and the DQ15 pin is used as an input for the
LSB (A-1) address.
Read
The internal state of the device is set for the read
mode and the device is ready for reading array data
upon device power-up, or after a hardware reset. To
read the stored data from the cell array of the
device, CE# and OE# pins should be driven to V
IL
Standby Mode
while WE# pin remains at V . CE# is the power
IH
control and selects the device. OE# is the output
control and gates array data to the output pins.
When the device is not selected or activated in a
system, it needs to stay at the standby mode, in
which current consumption is greatly reduced with
outputs in the high impedance state.
Word or byte mode of output data is determined by
the BYTE# pin. No additional command is needed
in this mode to obtain array data. Standard micro-
processor read cycles that assert valid addresses
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The device enters the CMOS standby mode when
CE# and RESET# pins are both held at Vcc 0.3V.
(Note that this is a more restricted voltage range
set-up cycle and the last cycle with the program data
and addresses. In this mode, two unlock cycles are
saved ( or bypassed ).
+
than V ) If CE# and RESET# are held at V , but
IH.
IH
Sector Addresses
not within Vcc+0.3V, the device will be still in the
standby mode, but the standby current will be
greater than the CMOS standby current (0.2uA typi-
cally). When the device is in the standby mode, only
The entire memory space of cell array is divided into
a many of small sectors: 16Kbytes x 1, 8Kbytes x 2,
32Kbytes x 1 and 64Kbytes x 15 main sectors. In
erase operation, a single sector, multiple sectors, or
the entire device (chip erase) can be selected for
erase. The address space that each sector occupies
is shown in detail in the Table 3-4.
standard access time (t ) is required for read
CE
access, before it is ready for read data. And even if
the device is deselected by CE# pin during erase or
programming operation, the device draws active cur-
rent until the operation is completely done. While the
device stays in the standby mode, the output is
placed in the high impedance state, independent of
the OE# input.
Autoselect Mode
Flash memories are intended for use in applications
where the local CPU alters memory contents. In
such applications, manufacturer and device identifi-
cation (ID) codes must be accessible while the
device resides in the target system ( the so called
“in-system program”). On the other hand, signature
codes have been typically accessed by raising A9
pin to a high voltage in PROM programmers. How-
ever, multiplexing high voltage onto address lines is
not the generally desired system design practice.
Therefore, in the ES29LV800 device an autoselect
command is provided to allow the system to access
the signature codes without any high voltage. The
conventional A9 high-voltage method used in the
PROM programers for signature codes are still sup-
ported in this device.
If the system writes the autoselect command
sequence, the device enters the Autoselect mode.
The system can then read some useful codes such
as manufacturer and device ID from the internal reg-
isters on DQ7 - DQ0. Standard read cycle timings
apply in this mode. In the Autoselect mode, the fol-
lowing three informations can be accessed through
either autoselect command method or A9 high-volt-
age autoselect method. Refer to the Table 2.
The device can enter the deep power-down mode
where current consumption is greatly reduced down
to less than 0.2uA typically by the following three
ways:
- CMOS standby ( CE#, RESET# = Vcc + 0.3V )
- During the device reset ( RESET# = Vss + 0.3V )
- In Autosleep Mode ( after tACC + 30ns )
Refer to the CMOS DC characteristics Table 7 for
further current specification.
Autosleep Mode
The device automatically enters a deep power-down
mode called the autosleep mode when addresses
remain stable for t
+30ns. In this mode, current
ACC
consumption is greatly reduced ( less than 0.2uA
typical ), regardless of CE#, WE# and OE# control
signals.
Writing Commands
To write a command or command sequences to ini-
tiate some operations such as program or erase, the
-
-
-
Manufacturer ID
Device ID
Sector protection verify
system must drive WE# and CE# to V , and OE# to
IL
V . For program operations, the BYTE# pin deter-
IH
mines whether the device accepts program data in
bytes or words. Refer to “BYTE# timings for Write
Operations” in the Fig. 19 for more information.
Hardware Device Reset ( RESET# )
The RESET# pin provides a hardware method of
resetting the device to read array data. When the
Unlock Bypass Mode
RESET# pin is driven low for at least a period of t
,
RP
To reduce more the programming time, an unlock-
bypass mode is provided. Once the device enters
this mode, only two write cycles are required to ini-
tiate the programming operation instead of four
cycles in the normal program command sequences
which are composed of two unlock cycles, program
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the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the
RESET# pulse The device also resets the internal
state machine to reading array data. The operation
that was interrupted should be reinitiated once after
the device is ready to accept another command
sequence, to ensure data integrity.
Sector protection can be implemented via two
methods.
-
-
In-system protection
A9 High-voltage protection
To check whether the sector protection was suc-
cessfully executed or not, another operation called
“protect verification” needs to be performed after
the protection operation on a sector. All protection
and protect verifications provided in the device are
summarized in detail at the Table 1.
CMOS Standby during Device Reset
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at Vss
device draws the greatly reduced CMOS standby
current ( I ). If RESET# is held at V but not
+ 0.3V, the
In-System Protection
CC4
IL
within Vss+0.3V, the standby current will be greater.
“In-system protection”, the primary method,
requires V (11.5V~12.5V) on the RESET# with
ID
RY/BY# and Terminating Operations
A6=0, A1=1, and A0=0. This method can be imple-
mented either in-system or via programming equip-
ment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 2 for the protection algorithm.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is completed, which
requires a time of t
(during Embedded Algo-
READY
rithms). The system can thus monitor RY/BY# to
determine whether the reset operation is completed.
If RESET# is asserted when a program or erase
operation is not executing (RY/BY# pin is “1”), the
A9 High-Voltage Protection
“High-voltage protection”, the alternate method
intended only for programming equipment, must
reset operation is completed within a time of t
force V (11.5~12.5V) on address pin A9 and con-
READY
ID
(not during Embedded Algorithms). The system can
trol pin OE# with A6=0, A1=1 and A0=0. Refer to
Fig. 28 for timing diagram and Fig. 4 for the protec-
tion algorithm.
read data after the RESET# pin returns to V , which
IH
requires a time of t
RH.
SECTOR UNPROTECTION
RESET# tied to the System Reset
The previously protected sectors must be unpro-
tected before modifying any data in the sectors.
The sector unprotection algorithm unprotects all
sectors in parallel. All unprotected sectors must first
be protected prior to the first sector unprotection
write cycle to avoid any over-erase due to the intrin-
sic erase characteristics of the protection cell. After
the unprotection operation, all previously protected
sectors will need to be individually re-protected.
Standard microprocessor bus cycle timings are
used in the unprotection and unprotect verification
operations. Three unprotect methods are provided
in the ES29LV800 device. All unprotection and
unprotect verification cycles are summarized in
detail at the Table 1.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the boot-
up firmware from the Flash memory.Refer to the AC
Characteristics tables for RESET# parameters and
to Fig. 17 for the timing diagram.
SECTOR PROTECTION
The ES29LV800 features hardware sector protec-
tion. In the device, sector protection is performed on
the sector previously defined in the Table 3-4. Once
after a sector is protected, any program or erase
operation is not allowed in the protected sector. The
previously protected sectors must be unprotected by
one of the unprotect methods provided here before
changing data in those sectors.
-
-
-
In-system unprotection
A9 High-voltage unprotection
Temporary sector unprotection
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The command register and all internal program/
erase circuits are disabled, and the device resets to
the read mode. Subsequent writes are ignored until
In-System Unprotection
“In-system unprotection”, the primary method,
Vcc is greater than V
. The system must provide
requires V (11.5V~12.5V) on the RESET# with
LKO
ID
proper signals to the control pins to prevent unin-
A6=1, A1=1, and A0=0. This method can be imple-
mented either in-system or via programming equip-
ment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 3 for the unprotection algorithm.
tentional writes when Vcc is greater than V
.
LKO
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
A9 High-Voltage Unprotection
“High-voltage unprotection”, the alternate method
intended only for programming equipment, must
Logical inhibit
force V (11.5~12.5V) on address pin A9 and con-
Write cycles are inhibited by holding any one of
ID
trol pin OE# with A6=1, A1=1 and A0=0. Refer to
Fig. 29 for timing diagram and Fig. 5 for the unpro-
tection algorithm.
OE#=V , CE#=V or WE#=V . To initiate a write
IL
IH
IH
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Temporary Sector Unprotect
Power-up Write Inhibit
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
If WE#=CE#=V and OE#=V during power up,
IL
IH
the device does not accept any commands on the
rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
the RESET# pin to V (11.5V-12.5V). During this
ID
mode, formerly protected sectors can be pro-
grammed or erased by selecting the sector
addresses. Once V is removed from the RESET#
ID
START
pin, all the previously protected sectors are pro-
tected again. Fig. 1 shows the algorithm, and Fig. 25
shows the timing diagrams for this feature.
RESET# = VID
(Note 1)
HARDWARE DATA PROTECTION
The ES29LV800 device provides some protection
measures against accidental erasure or program-
ming caused by spurious system level signals that
may exist during power transition. During power-up,
all internal registers and latches in the device are
cleared and the device automatically resets to the
read mode. In addition, with its internal state
machine built-in the device, any alteration of the
memory contents or any initiation of new operation-
can only occur after successful completion of spe-
cific command sequences. And several features are
incorporated to prevent inadvertent write cycles
resulting from Vcc power-up and power-down transi-
tion or system noise.
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors are unprotected .
2. All previously protected sectors are protected once again.
Low Vcc Write inhibit
When Vcc is less than V
, the device does not
LKO
accept any write cycles. This protects data during
Vcc power-up and power-down.
Figure 1. Temporary Sector Unprotect
Operation
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Table 1. ES29LV800 Device Bus Operations
DQ0
~
DQ7
DQ8~DQ15
Operation
CE# OE# WE# RESET# Addresses
BYTE#
= VIH
BYTE#
= VIL
(Note 1)
Read
Write
L
L
H
L
A
D
D
L
H
H
DQ8~DQ14 = High-Z,
DQ15 = A-1
IN
OUT
OUT
A
H
(Note 3)
High-Z
(Note 3)
High-Z
IN
Vcc+
0.3V
Standby
X
X
Vcc+
0.3V
X
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
High-Z
High-Z
High-Z
High-Z
X
Sector Protect
(Note 2)
SA,A6=L,
A1=H,A0=L
V
L
L
X
L
H
H
X
L
L
X
L
(Note 3)
(Note 3)
(Note 3)
X
X
X
X
ID
Sector Unprotect
(Note 2)
SA,A6=H,
A1=H,A0=L
In-system
V
V
ID
ID
Temporary Sector
Unprotect
A
(Note 3)
High-Z
IN
SA,A9=V
A6=L,
,
ID
Sector protect
V
H
ID
ID
A9 High-Volt-
age Method
A1=H,A0=L
(Note 3)
(Note 3)
High-Z
SA,A9=V
A6=H,
,
ID
Sector unprotect
V
H
L
L
A1=H,A0=L
Legend: L=Logic Low=V , H=Logic High=V , V =11.5-12.5V, X=Don’t Care, SA=Sector Address, A =Address In, D =Data In,
IL
IH ID
IN
IN
D
=Data Out
OUT
Notes:
1. Addresses are A18:A0 in word mode (BYTE#=V ) , A18:A-1 in byte mode (BYTE#=V ).
IH
IL
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection and Unprotection” section.
3. D or D
as required by command sequence, data polling, or sector protection algorithm.
IN
OUT
Table 2. Autoselect Codes (A9 High-Voltage Method)
A18 A11
A8
A9 to
A7
A5
to
A2
DQ8~DQ15
Description CE# OE# WE# to
to
A6
A1 A0
DQ7~DQ0
BYTE# BYTE#
A12 A10
= VIH
= VIL
L
L
H
H
VID
VID
X
X
L
L
X
X
L
L
L
X
ManufactureID:ESI
L
L
X
X
X
X
X
4Ah
Device ID:
ES29LV800
H
22h
X
X
X
DAh(T),5Bh(B)
Sector Protection
Verification
01h(protected)
00h(unprotected)
VID
L
L
H
SA
X
X
L
X
H
L
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=V , H=Logic High=V , SA=Sector Address, X = Don’t care
IL
IH
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Table 3. Top Boot Sector Addresses (ES29LV800DT)
Sector address
A18~A12
Sector Size
(Kbytes/Kwords)
(X8)
Address Range
(X16)
Address Range
Sector
Remark
SA0
SA1
0000XXX
0001XXX
0010XXX
0011XXX
0100XXX
0101XXX
0110XXX
0111XXX
1000XXX
1001XXX
1010XXX
1011XXX
1100XXX
1101XXX
1110XXX
11110XX
1111100
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
00000h~0FFFFh
10000h~1FFFFh
20000h~2FFFFh
30000h~3FFFFh
40000h~4FFFFh
50000h~5FFFFh
60000h~6FFFFh
70000h~7FFFFh
80000h~8FFFFh
90000h~9FFFFh
A0000h~AFFFFh
B0000h~BFFFFh
C0000h~CFFFFh
D0000h~DFFFFh
E0000h~EFFFFh
F0000h~F7FFFh
F8000h~F9FFFh
FA000h~FBFFFh
FC000h~FFFFFh
00000h~07FFFh
08000h~0FFFFh
10000h~17FFFh
18000h~1FFFFh
20000h~27FFFh
28000h~2FFFFh
30000h~37FFFh
38000h~3FFFFh
40000h~47FFFh
48000h~4FFFFh
50000h~57FFFh
58000h~5FFFFh
60000h~67FFFh
68000h~6FFFFh
70000h~77FFFh
78000h~7BFFFh
7C000h~7CFFFh
7D000h~7DFFFh
7E000h~7FFFFh
SA2
SA3
SA4
SA5
SA6
SA7
Main Sector
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
Boot Sector
1111101
8/4
111111X
16/8
Note:
The addresses range is A18:A-1 in byte mode (BYTE#=V ) or A18:A0 in word mode (BYTE#=V ).
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Table 4. Bottom Boot Sector Addresses (ES29LV800DB)
Sector address
A18~A12
Sector Size
(Kbytes/Kwords)
(X8)
Address Range
(X16)
Address Range
Sector
Remark
SA0
SA1
000000X
0000010
0000011
00001XX
0001XXX
0010XXX
0011XXX
0100XXX
0101XXX
0110XXX
0111XXX
1000XXX
1001XXX
1010XXX
1011XXX
1100XXX
1101XXX
1110XXX
1111XXX
16/8
8/4
00000h~03FFFh
04000h~05FFFh
06000h~07FFFh
08000h~0FFFFh
10000h~1FFFFh
20000h~2FFFFh
30000h~3FFFFh
40000h~4FFFFh
50000h~5FFFFh
60000h~6FFFFh
70000h~7FFFFh
80000h~8FFFFh
90000h~9FFFFh
A0000h~AFFFFh
B0000h~BFFFFh
C0000h~CFFFFh
D0000h~DFFFFh
E0000h~EFFFFh
F0000h~FFFFFh
00000h~01FFFh
02000h~02FFFh
03000h~03FFFh
04000h~07FFFh
08000h~0FFFFh
10000h~17FFFh
18000h~1FFFFh
20000h~27FFFh
28000h~2FFFFh
30000h~37FFFh
38000h~3FFFFh
40000h~47FFFh
48000h~4FFFFh
50000h~57FFFh
58000h~5FFFFh
60000h~67FFFh
68000h~6FFFFh
70000h~77FFFh
78000h~7FFFFh
Boot Sector
SA2
8/4
SA3
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
Main Sector
Note:
The addresses range is A18:A-1 in byte mode (BYTE#=V ) or A18:A0 in word mode (BYTE#=V ).
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In-System Protection / Unprotection Method
START
START
Protect all sectors:
The indicated por-
tion of the sector
protect algorithm
must be performed
for all unprotected
sectors prior to
issuing the first
sector unprotect
address
COUNT = 1
RESET# = V
COUNT = 1
RESET# = V
ID
ID
Wait 1us
Wait 1us
No
No
Temporary Sector
Unprotect Mode
First Write
First Write
Temporary Sector
Unprotect Mode
Cycle = 60h?
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected ?
Sector Protect:
Write 60h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unpro-
tect:
Write 60h to sec-
tor address with
A6 = 1, A1 = 1,
Wait 150us
Verify Sector
Protect:
Write 40h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Wait 15ms
Increment
COUNT
Reset
COUNT = 1
Verify Sector
Unprotect:
Write 40h to sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
Set up next
sector address
Read from sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Increment
COUNT
No
Read from sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
No
COUNT=25?
Data = 01h?
Yes
No
Yes
No
Yes
COUNT
=1000?
Data = 00h?
Yes
Protectanother
sector?
Device failed
Yes
No
No
Remove V
from RESET#
ID
Last sector
verified?
Device failed
Yes
Write reset
command
Remove V from
ID
RESET#
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 3. In-System Sector
Unprotect Algorithm
Figure 2. In-System Sector
Protect Algorithm
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A9 High-Voltage Method
Start
Note: All sectors must be
previously protected.
Start
COUNT = 1
COUNT = 1
SET A9=OE#=V
ID
SET A9=OE#=V
ID
,
CE#, A0=V
Set Sector Address
A<18 :12>
IL
RESET#,
A6, A1=V
CE#, A6, A0=V
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RESET#, A1=V
IH
SET WE# = V
Wait 15ms
IL
SET WE# = V
Wait 150 us
IL
SET WE# = V
IH
SET WE# = V
IH
Increase COUNT
Increase COUNT
CE#,OE#, A0=V
IL
RESET#, A6, A1=V
IH
CE#,OE#,A6,A0=V
IL
RESET#, A1 = V
IH
Set Sector AddressA<18 :12>
Read Data
Read Data
No
No
No
COUNT= 25?
Data = 01h?
Yes
No
COUNT=1000?
Data = 00h?
Yes
Increase Sector
Address
Yes
Yes
Device failed
Yes
Protect Another
Sector ?
Device failed
No
The Last Sector
Address ?
No
Remove V from
ID
A9 and Write
Yes
Reset Command
Remove V from A9 and
ID
Write Reset Command
Sector Protection
Complete
Sector Unprotection
Complete
Figure 4. Sector Protection Algorithm
(A9 High-Voltage Method)
Figure 5. Sector Un-Protection Algorithm
(A9 High-Voltage Method)
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COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates
device operations. Table 5 defines the valid register
command sequences. Note that writing incorrect
address and data values or writing them in the
improper sequence may place the device in an
unknown state. A reset command is required to
return the device to normal operation.
the Device Bus Operations section for more informa-
tion.The Read-Only Operations table provides the
read parameters, and Fig. 16 shows the timing dia-
gram
RESET COMMAND
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever hap-
pens first. Refer to the AC Characteristics section for
timing diagrams.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
which the system was writing to the read mode.
Once erasure begins, however, the device ignores
reset commands until the operation is complete.
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required
to retrieve data. The device is ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device
to which the system was writing to the read mode. If
the program command sequence is written to a sec-
tor that is in the Erase Suspend mode, writing the
reset command returns the device to the erase-sus-
pend-read mode. Once programming begins, how-
ever, the device ignores reset commands until the
operation is complete.
After the device accepts an Erase Suspend com-
mand, the device enters the erase-suspend-read
mode, after which the system can read data from
any non-erase-suspended sector. After completing a
programming operation in the Erase Suspend mode,
the system may once again read array data with the
same exception. See the Erase Suspend/Erase
Resume Commands section for more information.
The reset command may be written between the
sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset
command must be written to return to the read
mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset
command returns the device to the erase-suspend-
read mode.
The system must issue the reset command to return
the device to the read (or erase-suspend-read)
mode if DQ5 goes high during an active program or
erase operation, or if the device is in the autoselect
mode. See the next section, Reset Command, for
more information.
If DQ5 goes high during a program or erase opera-
tion, writing the reset command returns the device to
the read mode (or erase-suspend-read mode if the
device was in Erase-Suspend).
See also Requirements for Reading Array Data in
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Command Definitions
Table 5. ES29LV800 Command Definitions
Bus Cycles (Notes 2~5)
Fourth
Command
Sequence
(Note 1)
First
Addr
RA
Second
Addr
Third
Addr
Fifth
Addr
Sixth
Data
RD
F0
Data
Data
Addr
Data
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
XXX
555
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
PA
555
AAA
555
Manufacturer ID
Device ID (Top)
Device ID (Bottom)
4
4
4
4
4
3
AA
AA
AA
AA
AA
AA
55
55
55
55
55
55
90
90
90
90
A0
20
X00
4A
AAA
555
X01
DA
AAA
555
AAA
555
X02
X01
5B
AAA
555
AAA
555
X02
(SA)X02
(SA)X04
Sector Protect Verify
(Note 9)
00/01
PD
AAA
555
AAA
555
Program
PA
AAA
555
AAA
555
Unlock Bypass
AAA
XXX
XXX
555
AAA
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
2
2
A0
90
PD
00
XXX
2AA
555
2AA
555
Word
Byte
Word
Byte
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
AAA
555
AAA
Sector Erase
SA
AAA
XXX
XXX
AAA
AAA
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
B0
30
Legend:
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18-A12 uniquely select any sector.
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
9. The data is 00h for an unprotected sector and 01h for a
protected sector.
10. The Unlock Bypass command is required prior to the Unlock-
Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to the read mode when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors,
or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during
a sector erase operation.
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15-DQ8 are don’t care in command sequences,
except for RD and PD
5. Unless otherwise noted, address bits A18-A11 are don’t cares.
6. No unlock or command cycles required when device is in
read mode.
7. The Reset command is required to return to the read mode
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a device is in the autoselect mode, or if DQ5
goes high (while the device is providing status information).
8. The fourth cycle of the autoselect command sequence
is a read cycle. Data bits DQ15-DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
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AUTOSELECT COMMAND
BYTE / WORD PROGRAM
The autoselect command sequence allows the host
system to access the manufacturer and device
codes, and determine whether or not a sector is
protected, including information about factory-
locked or customer lockable version.
The system may program the device by word or
byte, depending on the state of the BYTE# pin.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data
are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device auto-
matically provides internally generated program
pulses and verifies the programmed cell margin.
Table 5 shows the address and data requirements
for the byte program command sequence. Note that
the autoselect is unavailable while a programming
operation is in progress.
Identifier Code
Manufacturer ID
Device ID
Address
00h
Data
4Ah
01h
DAh(T),
5Bh(B)
Sector Protect Verify
(SA)02h
00 / 01
Table 5 shows the address and data requirements.
This method is an alternative to “A9 high-voltage
method” shown in Table 2, which is intended for
PROM programmers and requires V on address
ID
pin A9. The autoselect command sequence may be
written to an address within sector that is either in
the read mode or erase-suspend-read mode. The
auto-select command may not be written while the
device is actively programming or erasing. The
autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command.
The device then enters the autoselect mode. The
system may read at any address any number of
times without initiating another autoselect com-
mand sequence.
START
Write Program Com-
mand Sequence
Embedded
Program
algorithm in
progress
Data Poll
from System
Once after the device enters the auto-select mode,
the manufacture ID code ( 4Ah ) can be accessed
by one of two ways. Just one read cycle ( with A6,
A1 and A0 = 0 ) can be used. Or four consecutive
read cycles ( with A6 = 1 and A1, A0 = 0 ) for con-
tinuation codes (7Fh) and then another last cycle
for the code (4Ah) (with A6, A1 and A0 = 0) can be
used for reading the manufacturer code.
No
Verify Data
?
Yes
No
Last Address?
Yes
Increment Address
- 4Ah (One-cycle read)
- 7Fh 7Fh 7Fh 7Fh 4Ah (Five-cycle read)
Programming
Completed
The system must write the reset command to return
to the read mode (or erase-suspend-read mode if
the device was previously in Erase Suspend).
Note: See Table 5 for program command sequence
Figure 6. Program Operation
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During the unlock-bypass mode, only the unlock-
bypass program and unlock-bypass reset com-
mands are valid. To exit the unlock-bypass mode,
the system must issue the two-cycle unlock-bypass
reset command sequence. The first cycle must con-
tain the data 90h. The second cycle need to only
contain the data 00h. The device then returns to the
read mode.
Program Status Bits : DQ7, DQ6 or RY/BY#
When the Embedded Program algorithm is com-
plete, the device then returns to the read mode and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to the Write
Operation Status section Table 6 for information on
these status bits.
- Unlock Bypass Enter Command
- Unlock Bypass Reset Command
- Unlock Bypass Program Command
Any Commands Ignored during Program-
ming Operation
CHIP ERASE COMMAND
Any commands written to the device during the
Embedded Program algorithm are ignored. Note that
a hardware reset can immediately terminates the
program operation. The program command
sequence should be reinitiated once the device has
returned to the read mode, to ensure data integrity.
To erase the entire memory, a chip erase command
is used. This command is a six bus cycle operation.
The chip erase command sequence is initiated by
writing two unlock cycles, followed by a set-up com-
mand. Two additional unlock write cycles are then
followed by the chip erase command, which in turn
invokes the Embedded Erase algorithm. The chip
erase command erases the entire memory includ-
ing all other sectors except the protected sectors,
but the internal erase operation is performed on a
single sector base.
Programming from “0” back to “1”
Programming is allowed in any sequence and
across sector boundaries. But a bit cannot be pro-
grammed from “0” back to a ”1”. Attempting to do so
may cause the device to set DQ5 = 1, or cause the
DQ7 and DQ6 status bits to indicate the operation
was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations
can convert a “0” to a “1”
Embedded Erase Algorithm
The device does not require the system to prepro-
gram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the
entire memory for an all zero data pattern prior to
electrical erase. The system is not required to pro-
vide any controls or timings during these opera-
tions. Table 5 shows the address and data
requirements for the chip erase command
sequence. Note that the autoselect is unavailable
while an erase operation is in progress
Unlock Bypass
In the ES29LV800 device, an unlock bypass pro-
gram mode is provided for faster programming oper-
ation. In this mode, two cycles of program command
sequences can be saved. To enter this mode, an
unlock bypass enter command should be first written
to the system. The unlock bypass enter command
sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle contain-
ing the unlock bypass command, 20h. The device
then enters the unlock-bypass program mode. A
two-cycle unlock bypass program command
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program set-up command, A0h; the
second cycle contains the program address and
data. Additional data is programmed in the same
manner. This mode dispenses with the initial two
unlock cycles required in the standard program com-
mand sequence, resulting in faster total program-
ming time. Table 5 shows the requirements for the
command sequence.
Erase Status Bits : DQ7, DQ6, DQ2, or RY/
BY#
When the Embedded Erase algorithm is complete,
the device returns to the read mode and addresses
are no longer latched. The system can determine
the status of the erase operation by using DQ7,
DQ6, DQ2, or RY/BY#. Refer to the Write Opera-
tion Status section Table 6 for information on these
status bits.
Commands Ignored during Erase Operation
Any command written during the chip erase opera-
tion are ignored. However, note that a hardware
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reset immediately terminates the erase operation.If
that occurs, the chip erase command sequence
should be reinitiated once the device has returned to
reading array data. to ensure data integrity. Fig. 7
illustrates the algorithm for the erase operation.
Refer to the Erase and Program Operations tables in
the AC Characteristics section for parameters, and
Fig. 21 section for timing diagrams.
to the read mode. The system must rewrite the
command sequence and any additional addresses
and commands.
Status Bits : DQ7,DQ6,DQ2, or RY/BY#
When the Sector Erase Embedded Erase algorithm
is complete, the device returns to reading array
data and addresses are no longer latched. Note
that while the Embedded Erase operation is in
progress, the system can read data from the non-
erasing sector. The system can determine the sta-
tus of the erase operation by reading
DQ7,DQ6,DQ2, or RY/BY# in the erasing sector.
Refer to the Write Operation Status section Table 6
for information on these status bits.
SECTOR ERASE COMMAND
By using a sector erase command, a single sector or
multiple sectors can be erased. The sector erase
command is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then fol-
lowed by the address of the sector to be erased, and
the sector erase command. Table 5 shows the
address and data requirements for the sector erase
command sequence. Note that the autoselect is
unavailable while an erase operation is in progress.
Valid Command during Sector Erase
Once the sector erase operation has begun, only
the Erase Suspend command is valid. All other
commands are ignored. However, note that a hard-
ware reset immediately terminates the erase oper-
ation. If that occurs, the sector erase command
Embedded Sector Erase Algorithm
The device does not require the system to prepro-
gram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire mem-
ory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings these operations.
START
Write Erase
Command Sequence
(Notes 1,2)
Sector Erase Time-out Window and DQ3
Data Poll to
Erasing Bank
from System
Embedded
Erase
algorithm in
progress
After the command sequence is written, a sector
erase time-out of 50us occurs. During the time-out
period, additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the num-
ber of sectors may be from one sector to all sectors.
The time between these additional cycles must be
less than 50 us, otherwise the last address and com-
mand may not be accepted, and erasure may begin.
It is recommended that processor interrupts be dis-
abled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. The system
can monitor DQ3 to determine if the sector erase
timer has timed out (See the section on DQ3:Sector
Erase Timer.). The time-out begins from the rising
edge of the final WE# pulse in the command
sequence.
No
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence
2. See the section on DQ3 for information on the sector erase timer
Figure 7. Erase Operation
Any command other than Sector Erase or Erase Sus-
pend during the time-out period resets the device
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sequence should be reinitiated once the device has
returned to reading array data, to ensure data integ-
rity.
After an erase-suspended program operation is
complete, the device returns to the erase-suspend-
read mode. The system can determine the status for
the program operation using the DQ7 or DQ6 status
bits, just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Fig. 7 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parame-
ters, and Fig. 21 section for timing diagrams.
Autoselect during Erase-Suspend- Read
Mode
ERASE SUSPEND/ERASE RESUME
In the erase-suspend-read mode, the system can
also issue the autoselected command sequence.
Refer to the Autoselect Mode and Autoselect Com-
mand Sequence section for details (Table 5).
An erase operation is a long-time operation so that
two useful commands are provided in the
ES29LV800 device Erase Suspend and Erase
Resume Commands. Through the two commands,
erase operation can be suspended for a while and
the suspended operation can be resumed later when
it is required. While the erase is suspended, read or
program operations can be performed by the system.
Erase Resume Command
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the chip has resumed erasing.
Erase Suspend Command, (B0h)
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then
read data from, or program data to, any sector not
selected for erasure. This command is valid only dur-
ing the sector erase operation, including the 50us
time-out period during the sector erase command
sequence. The Erase Suspend command is ignored
if written during the chip erase operation or Embed-
ded Program algorithm. When the Erase Suspend
command is written during the sector erase opera-
tion, the device requires a maximum of 20us to sus-
pend the erase operation. However, when the Erase
Suspend command is written during the sector erase
time-out, the device immediately terminates the time-
out period and suspends the erase operation.
Read and Program during Erase-Suspend-
Read Mode
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.)
Reading at any address within erase-suspended sec-
tors produces status information on DQ7-DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if a sector is actively erasing or is erase-
suspended. Refer to the Write Operation Status sec-
tion for information on these status bits (Table 6).
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COMMAND DIAGRAM
PA/PD
Program
Done
A0
20
AA
80
Unlock
Bypass
90
55
90
55
Auto-
select
10
SA/30
SA/30
Chip
Erase
AA
F0
Done
Read
50us
00
Done
Sector
Erase
Resume
30
B0
Suspend
Erase-
suspend
Read
Figure 8. Command Diagram
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WRITE OPERATION STATUS
Erase algorithm is complete, or if the device enters
the Erase Suspend mode, Data# polling produces a
“1” on DQ7. The system must provide an address
within any of the sectors selected for erasure to read
valid status information on DQ7.
In the ES29LV800 device, several bits are provided
to determine the status of a program or erase oper-
ation: DQ2, DQ3, DQ5, DQ6, DQ7 and RY/BY#.
Table 6 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. The device
also provides a hardware-based output signal, RY/
BY#, to determine whether an Embedded Program
or Erase operation is in progress or has been com-
pleted.
Erase on the Protected Sectors
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 1.8us,
then the device returns to the read mode. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. How-
ever, if the system reads DQ7 at an address within a
protected sector, the status may not be valid.
DQ7 (DATA# POLLING)
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a
device is in Erase Suspend. Data# Polling is valid
after the rising edge of the final WE# pulse in the
command sequence.
Data# Polling Algorithm
Just prior to the completion of an Embedded
Program or Ease operation, DQ7 may change
asynchronously with DQ0-DQ6 while Output
Enable(OE#) is asserted low. That is, this device
may change from providing status information to
valid data on DQ7. Depending on when the system
samples the DQ7 output, it may read the status or
valid data. Even if the device has completed the
program or erase operation and DQ7 has valid data,
the data outputs on DQ0-DQ7 will appear on
successive read cycles.
During Programming
During the Embedded Program algorithm, the
device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status also
applies to programming during Erase Suspend.
When the Embedded Program algorithm is com-
plete, the device outputs the datum programmed to
DQ7. The system must provide the program
address to read valid status information on DQ7. If
a program address falls within a protected sector,
Data# Polling on DQ7 is active for approximately
250ns, then the device returns to the read mode.
Table 6 shows the outputs for Data# Polling on DQ7.
Fig. 9 shows the Data# Polling algorithm. Fig. 22 in
the AC Characteristics section shows the Data#
Polling timing diagram.
During Erase
During the Embedded Erase algorithm, Data# Poll-
ing produces a “0” on DQ7. When the Embedded
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Erase Suspend mode. Toggle Bit I may be read at
any address, and is valid after the rising edge of the
final WE# pulse in the command sequence ( prior to
the program or erase operation), and during the sec-
tor erase time-out. During an Embedded Program or
Erase algorithm operation, successive read cycles to
any address cause DQ6 to toggle. The system may
use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops tog-
gling.
START
Read DQ7-DQ0
Addr = VA
Yes
DQ7 = Data ?
No
No
DQ5 = 1 ?
The system can use DQ6 and DQ2 together to
determine whether a sector is actively erasing or is
erase-suspended. When the device is actively eras-
ing (that is, the Embedded Erase algorithm is in
progress), DQ6 toggles. When the device enters the
Erase Suspend mode, DQ6 stops toggling. How-
ever, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended.
Alternatively, the system can use DQ7(see the sub-
section on DQ7:Data# Polling). DQ6 also toggles
during the erase-suspend-program mode, and stops
toggling once the Embedded Program algorithm is
complete.
Yes
Read DQ7-DQ0
Addr = VA
Yes
DQ7 = Data ?
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase
operation, a valid address is any sector address within the
sector being erased. During chip erase, a valid address in
any non-protected sector address.
Table 6 shows the outputs for Toggle Bit I on DQ6.
Fig. 10 shows the toggle bit algorithm. Fig. 23 in the
“AC Characteristics” section shows the toggle bit
timing diagrams. Fig. 24 shows the differences
between DQ2 and DQ6 in graphical form. See also
the subsection on DQ2 : (Toggle Bit II).
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5
Figure 9. Data# Polling Algorithm
Toggling on the Protected Sectors
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 1.8us, then returns to reading
array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unpro-
tected sectors, and ignores the selected sectors that
are protected. If a program address falls within a
protected sector, DQ6 toggles for approximately
250ns after the program command sequence is writ-
ten, then returns to reading array data.
RY/BY# ( READY/BUSY# )
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is
in progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-
drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc. If
the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the
standby mode, or in the erase-suspend-read mode.
Table 6 shows the outputs for RY/BY#.
DQ2 ( TOGGLE BIT II )
The “Toggle Bit II” on DQ2, when used with DQ6,
indicates whether a particular sector is actively eras-
ing (that is, the Embedded Erase algorithm is in
progress), or whether that sector is erase-sus-
pended. Toggle Bit II is valid after the rising edge of
the final WE# pulse in the command sequence DQ2
DQ6 ( TOGGLE BIT I )
Toggle Bit I on DQ6 indicates whether an Embed-
ded Program or Erase algorithm is in progress or
complete, or whether the device has entered the
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toggles when the system reads at addresses within
those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-
suspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase
Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are
required for sector and mode information. Refer to
Table 6 to compare outputs for DQ2 and DQ6. Fig.
10 shows the toggle bit algorithm in flowchart form,
and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsec-
tion. Fig. 23 shows the toggle bit timing diagram.
Fig. 24 shows how differently DQ2 operates com-
pared with DQ6.
START
Read DQ7-DQ0
Read DQ7-DQ0
No
Toggle Bit
= Toggle ?
Yes
DQ5 = 1 ?
Yes
No
Read DQ7-DQ0
Twice
Reading Toggle Bits DQ6/DQ2
No
Toggle Bit
= Toggle ?
Refer to Fig. 10 for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7-DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typi-
cally, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or
erase operation. The system can read array data
on DQ7-DQ0 on the following read cycle. However,
if after the initial two read cycles, the system deter-
mines that the toggle bit is still toggling, the system
also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is tog-
gling, since the toggle bit may have stopped tog-
gling just as DQ5 went high. If the toggle bit is no
longer toggling, the device has successfully com-
pleted the program or erase operation. If it is still
toggling, the device did not completed the operation
successfully, and the system must write the reset
command to return to reading array data. The
remaining scenario is that the system initially deter-
mines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read
cycles, determining the status as described in the
previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, this sys-
tem must start at the beginning of the algorithm
when it returns to determine the status of the opera-
tion (top of Fig. 10).
Yes
Program/Erase
Operation
Complete
Program/Erase
Operation Not
Complete, Write
Reset Command
Note:
The system should recheck the toggle bit even if DQ5 = “1”
because the toggle bit may stop toggling as DQ5 changes to “1”.
See the subsections on DQ6 and DQ2 for more information.
Figure 10. Toggle Bit Algorithm
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time-out also applies after each additional sector
erase command. When the time-out period is com-
plete, DQ3 switches from a “0” to a”1”. If the time
between additional sector erase commands from the
system can be assumed to be less than 50us, the
system need not monitor DQ3. See also the Sector
Erase Command Sequence section. After the sector
erase command is written, the system should read
the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit
I) to ensure that the device has accepted the com-
mand sequence, and then read DQ3. If DQ3 is “1”,
the Embedded Erase algorithm has begun; all fur-
ther commands (except Erase Suspend) are ignored
until the erasure operation is complete. If DQ3 is “0”,
the device will accept additional sector erase com-
mands. To ensure the command has been accepted,
the system software should check the status of DQ3
prior to and following each subsequent sector erase
command. If DQ3 is high on the second status
check, the last command might not have been
accepted. In Table 6, DQ3 status operation is well
defined and summarized with other status bits, DQ7,
DQ6, DQ5, and DQ2.
DQ5 ( EXCEEDED TIMING LIMITS )
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1”, indi-
cating that the program or erase cycle was not suc-
cessfully completed. The device may output a “1”
on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0”
Only an erase operation can change a “0” back to a
“1”. Under this condition, the device halts the opera-
tion, and when the timing limit has been exceeded,
DQ5 produces a ”1”. Under both these conditions,
the system must write the reset command to return
to the read mode.
DQ3 ( SECTOR ERASE TIMER )
After writing a sector erase command sequence,
the system may read DQ3 to determine whether or
not erasure has begun. (The sector erase time
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire
Table 6. Write Operation Status
DQ7
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/
BY#
Status
DQ6
(Note 2)
DQ7#
0
Embedded Program Algorithm
Embedded Erase Algorithm
Toggle
Toggle
0
0
N/A
No toggle
0
0
Standard
Mode
1
Toggle
Toggle
Erase Suspended
Sector
1
No toggle
0
N/A
1
Erase-Suspend-
Read
Erase Sus-
pend Mode
Non-Erase
Suspended Sector
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
DQ7#
Toggle
Notes :
1. DQ5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
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ABSOLUTE MAXIMUM RATINGS
20ns
20ns
Storage Temperature
+0.8V
o
o
Plastic Packages ..............................................-65 C to +150 C
Vss-0.5V
Ambient Temperature
o
o
with Power Applied ...........................................-65 C to +125 C
Vss-2.0V
Voltage with Respect to Ground
20ns
Vcc (Note 1) ..........................................................-0.5V to +4.0V
A9, OE# and RESET# (Note 2) ........................-0.5V to +12.5V
All other pins (Note 1) ...................................-0.5V to Vcc + 0.5V
Negative Overshoot
Output Short Circuit Current (Note 3) ................. 200 mA
20ns
20ns
Notes:
Vcc+2.0V
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage
transitions, input or I/O pins may overshoot Vss to -2.0V for per-
iods of up to 20ns. Maximum DC voltage on input or I/O pins is
Vcc+0.5V. See Fig. 11. During voltage transition, input or I/O pins
may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 11.
Vcc+0.5V
2.0V
2. Minimum DC input voltage on pins A9, OE# and RESET# is -0.5V
.
During voltage transitions, A9, OE# and RESET# may overshoot
Vss to -2.0V for periods of up to 20ns. See Fig. 11. Maximum DC
input voltage on pin A9 is +12.5V which may overshoot to +14.0V
for periods up to 20ns.
20ns
Positive Overshoot
3. No more than one output may be shorted to ground at a time. Du-
ration of the short circuit should not be greater than one second.
Figure 11. Maximum Overshoot Waveform
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions ab-
ove those indicated in the operational sections of this datasheet is
not implied. Exposure of the device to absolute maximum rating con-
ditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA).................................-40oC to +85oC
Commercial Devices
Ambient Temperature (TA)....................................0oC to +70oC
Vcc Supply Voltages
Vcc for all devices ............................................2.7V to 3.6V
Operating ranges define those limits between which the functio-
nality of the device is guaranteed.
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DC CHARACTERISTICS
Table 7. CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min Typ
Max
Unit
ILI
Input Load Current
VIN=Vss to Vcc
Vcc=Vcc max
+ 1.0
uA
ILIT
ILR
ILO
A9 Input Load Current
Vcc=Vcc max; A9=12.5V
35
uA
uA
uA
RESET# Input Load Current
Output Leakage Current
Vcc=Vcc max; RESET#=12.5V
35
Vout=Vss to Vcc,
Vcc=Vcc max
+ 1.0
5MHz
7
2
15
4
CE#=VIL OE#=VIH, Byte
mode
1MHz
ICCI
Vcc Active Read Current
(Notes 1,2)
mA
CE#=VIL, OE#=VIH, Word
mode
5MHz
1MHz
7
15
4
2
ICC2
ICC3
ICC4
ICC5
Vcc Active Write Current (Note 2,3)
Vcc Standby Current (Note 2)
Vcc Reset Current (Note 2)
CE#=VIL, OE#=VIH, WE#=VIL
CE#, RESET#= Vcc+0.3V
RESET#=Vss + 0.3V
15
30
mA
uA
uA
uA
0.2
0.2
0.2
10
10
10
Automatic Sleep Mode
(Notes2,4)
VIH = Vcc + 0.3V
VIL = Vss + 0.3V
VIL
VIH
VID
Input Low Voltage
Input High Voltage
-0.5
0.5
V
V
V
0.7xVcc
11.5
Vcc+0.3
12.5
Voltage for Autoselect and
Temporary Sector Unprotect
Vcc = 3.0V + 10%
VOL
Output Low Voltage
IOL = 4.0 mA, Vcc = Vcc min
IOH = -2.0mA, Vcc = Vcc min
IOH = -100 uA, Vcc = Vcc min
0.45
V
VOH1
VOH2
VLKO
0.85 Vcc
Vcc - 0.4
2.3
Output High Voltage
V
V
Low Vcc Lock-Out Voltage (Note 5)
2.5
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25oC, Vcc = 3V
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
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DC CHARACTERISTICS
Zero-Power Flash
15
Icc1 (Active Read current)
Icc5 (Automatic Sleep Mode)
10
5
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 12. Icc1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6V
2.7V
10
8
6
4
2
0
1
3
2
4
5
Note: T = 25oC
Frequency in MHz
Figure 13. Typical Icc1 vs. Frequency
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3.3V
Table 8. Test Specifications
2.7k
Ω
Test Condition
70
90
120
Device
Under
Test
Output Load
1TTL gate
100 pF
C
L
Output Load Capacitance, CL (including jig
capacitance)
30 pF
100 pF
6.2kΩ
Input Rise and Fall Times
5 ns
0.0 - 3.0 V
1.5 V
Input Pulse Levels
Input timing measurement reference levels
Output timing measurement reference levels
Figure 14. Test Setup
1.5 V
Note: Diodes are IN3064 or equivalent
Key To Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
3.0V
1.5V Output
Input 1.5V
Measurement Level
0.0V
Figure 15. Input Waveforms and Measurement Levels
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AC CHARACTERISTICS
Table 9. Read-Only Operations
Parameter
Speed Options Unit
Description
Test Setup
JEDEC Std.
70
Min 70
Max 70
Max 70
Max 30
Max
90
90
90
90
35
120
120
120
120
50
tAVAV
tRC
tACC
tCE
tOE
tDF
Read Cycle Time(Note 1)
ns
ns
ns
ns
ns
ns
ns
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
Address to Output Delay
CE#,OE#=VIL
OE#=VIL
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
16
16
0
tDF
Max
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
tOEH
Output Enable Hold
Time (Note 1)
Read
Min
Min
0
ns
ns
Toggle and Data# Polling
10
Note : 1. Not 100% tested
tRC
Address
Address Stable
tACC
CE#
OE#
WE#
tRH
tDF
tRH
tOE
tOEH
tCE
tOH
High-Z
High-Z
OUTPUTS
Output Valid
RESET#
RY/BY#
0V
Figure 16. Read Operation Timings
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AC CHARACTERISTICS
Table 10. Hardware Reset ( RESET #)
Parameter
Description
All Speed Options Unit
JEDEC Std.
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode
(See Note)
Max
Max
20
us
tReady
RESET# Pin Low (Not During Embedded Algorithms) to Read
Mode (See Note)
500
ns
tRP
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
us
ns
tRH
tRPD
tRB
RESET High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
Note : Not 100% tested
RY/BY#
0V
CE#,OE#
RESET#
tRH
tRP
tREADY
(A) Not During Embedded Algorithm
tREADY
RY/BY#
tRB
CE#,OE#
RESET#
tRP
(B) During Embedded Algorithm
Figure 17. Reset Timings
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AC CHARACTERISTICS
Table 11. Word/Byte Configuration (BYTE#)
Parameter
Description
70
90
120
Unit
JEDEC
Std.
tELFL/tELFH
tFLQZ
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
ns
ns
ns
25
70
30
90
30
tFHQV
120
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0-DQ14)
Data Output
(DQ0-DQ7)
BYTE# Switching
Switching from
word to byte mode
DQ0-DQ14
DQ15/A-1
DQ15
Output
Address Input
tFLQZ
tELFH
BYTE#
BYTE# Switching
Switching from
byte to word mode
Data Output
(DQ0-DQ7)
Data Output
(DQ0-DQ14)
DQ0-DQ14
DQ15
Output
Address Input
DQ15/A-1
tFHQV
Figure 18. BYTE# Timing for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
tHOLD
(tAH
(tAS
)
)
Note : Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 19. BYTE# Timing for Write Operations
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AC CHARACTERISTICS
Table 12. Erase and Program Operations
Parameter
Description
70
90
120
Unit
JEDEC
tAVAV
Std.
tWC
Write Cycle Time (Note 1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
70
90
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVWL
tAS
Address Setup Time
0
tASO
tAH
tAHT
tDS
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
15
45
tWLAX
45
35
50
50
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
0
tDVWH
tWHDX
45
tDH
Data Hold Time
0
tOEPH
tGHWL
tCS
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
20
0
tGHWL
tELWL
0
tWHEH
tWLWH
tWHDL
tCH
CE# Hold Time
0
tWP
Write Pulse Width
35
35
50
tWPH
tSR/W
Write Pulse Width High
30
0
Latency Between Read and Write Operations
Byte
Typ
Typ
Typ
6
8
tWHWH1
tWHWH2
tWHWH1
Programming Operation (Note 2)
Word
us
tWHWH2
tVCS
Sector Erase Operation (Note 2)
Vcc Setup Time (Note 1)
0.7
sec
us
Min
Min
Max
50
0
tRB
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
ns
tBUSY
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
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AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data(last two cycles)
tWC
tAS
Address
555h
PA
PA
PA
tAH
CE#
tCH
OE#
WE#
tCS
tWP
tWHWH1
tWPH
tDS
tDH
Status
Dout
A0h
PD
tBUSY
DATA
tRB
RY/BY#
Vcc
tVCS
NOTES :
1. PA = program address, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
Figure 20. Program Operation Timings
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AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
tAH
tWC
tAS
SA
Address
2AAh
VA
VA
555h for chip erase
CE#
tCH
OE#
WE#
tCS
tWP
tWHWH2
tWPH
tDS
tDH
10h for chip erase
30h
In
Complete
55h
Progress
DATA
tRB
tBUSY
RY/BY#
Vcc
tVCS
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 21. Chip/Sector Erase Operation Timings
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AC CHARACTERISTICS
tRC
Address
VA
VA
tACC
VA
tCE
CE#
OE#
tCH
tOE
tOEH
tDF
WE#
tOH
HIGH-Z
DQ7
Complement
Complement
Status Data
True
Valid Data
HIGH-Z
DQ0-DQ6
Status Data
True
Valid Data
tBUSY
RY/BY#
NOTE : VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 22. Data# Polling Timings (During Embedded Algorithms)
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AC CHARACTERISTICS
tAHT
tAS
Address
tASO
tAHT
CE#
tOEH
tCEPH
WE#
OE#
tOEPH
tDH
tOE
DQ6/DQ2
RY/BY#
Valid Data
Valid Data
Valid Status
(first read)
Valid Status
(second read)
Valid Status
(stops toggling)
NOTE : VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 23. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Enter Erase
Suspend
Program
Enter
Suspend
Erase
Resume
WE#
Erase
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Complete
Erase
Suspend
Read
Erase
DQ6
DQ2
NOTE : DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 24. DQ2 vs. DQ6
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AC CHARACTERISTICS
Table 13. Temporary Sector Unprotect
Parameter
Description
All Speed Options
Unit
JEDEC Std.
tVIDR
tRSP
tRRB
VID Rise and Fall Time (See Note)
Min
Min
Min
500
4
ns
us
us
RESET# Setup Time for Temporary Sector Unprotect
RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect
4
Note: Not 100% tested.
VID
RESET#
Vss,VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 25. Temporary Sector Unprotect Timing Diagram
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AC CHARACTERISTICS
VID
VIH
RESET#
SA,A6,
A1,A0
Valid*
Sector Protect or Unprotect
Valid*
Valid*
Verify
Status
DQ
60h
60h
40h
Sector Protect : 150us,
Sector Unprotect: 15ms
1us
CE#
WE#
OE#
* For sector protect, A6=0,A1=1,A0=0 For sector unprotect, A6=1,A1=1,A0=0
Figure 26. Sector Protect & Unprotect Timing Diagram
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AC CHARACTERISTICS
Table 14. Alternate CE# Controlled Erase and Program Operations
Parameter
Description
70
90
120
Unit
JEDEC
tAVAV
Std.
tWC
tAS
Write Cycle Time( Note 1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
70
90
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVWL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tELEL
Address Setup Time
0
tAH
Address Hold Time
45
35
45
45
50
50
tDS
Data Setup Time
tDH
Data Hold Time
0
0
0
0
tGHEL
tWS
tWH
tCP
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Byte
35
35
50
tCPH
30
Typ
Typ
Typ
6
8
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Programming Operation (Note 2)
us
Word
Sector Erase Operation (Note 2)
0.7
sec
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
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AC CHARACTERISTICS
PD for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data Polling
Address
PA
tAH
tAS
tWC
tWH
WE#
tGHEL
OE#
CE#
tWHWH1 or 2
tCP
tCPH
tWS
tDS
tBUSY
tDH
DOUT
DQ7#
DATA
tRH
PD for program
30 for sector erase
10 for chip erase
A0 for program
55 for erase
RESET#
RY/BY#
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
Figure 27. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
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Table 15. AC CHARACTERISTICS
Parameter
Description
Value
Unit
ns
tOE
tVIDR
tWPP1
tWPP2
tOESP
tCSP
Output Enable to Output Delay
Voltage Transition Time
Max
Min
Min
Min
Min
Min
Min
Min
30/35/50
500
150
15
4
ns
Write Pulse Width for Protection Operation
Write Pulse Width for Unprotection Operation
OE# Setup Time to WE# Active
CE# Setup Time to WE# Active
Voltage transition time
us
ms
us
4
us
tVLHT
tST
1
us
Voltage Setup Time
4
us
A<18:12>
SAy
SAx
A<0>
A
<1>
<6>
A
tVIDR
VID
tVIDR
A<9>
tST
VID
OE#
WE#
tOESP
tWPP1
tVLHT
tST
tOE
tCSP
CE#
DQ
0x01
RESET#
Vcc
Figure 28. Sector Protection timings (A9 High-Voltage Method)
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AC CHARACTERISTICS
A<18:12>
SA1
SA0
A<0>
A
<1>
<6>
A
tVIDR
VID
tVIDR
A<9>
tST
VID
OE#
WE#
tOESP
tWPP2
tST
tOE
tCSP
CE#
DQ
0x00
RESET#
Vcc
NOTE : It is recommended to verify for all sectors.
Figure 29. Sector Unprotection timings (A9 High-Voltage Method)
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Table 16. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2) Unit
Comments
Sector Erase Time
0.7
14
6
10
sec
sec
us
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
Byte Program Time
Word Program Time
150
210
8
us
Exclude system level overhead (Note 5)
Byte Mode
Word Mode
6.3
4.2
18.9
12.6
Chip Program Time (Note 3)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25oC, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles
.
Table 17. LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
Input voltage with respect to Vss on all I/O pins
- 1.0V
- 1.0V
12.5 V
Vcc + 1.0 V
+100 mA
Vcc Current
- 100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Table 18. TSOP, SO, AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
7.5
5.0
12
Unit
TSOP
6
pF
pF
pF
pF
pF
pF
CIN
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
FBGA
TSOP
FBGA
TSOP
FBGA
4.2
8.5
5.4
7.5
3.9
COUT
Output Capacitance
6.5
9
CIN2
Control Pin Capacitance
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25oC, f=1.0MHz.
Table 19. DATA RETENTION
Parameter Description
Test conditions
Min
Unit
150oC
125oC
10
20
Years
Minimum Pattern Data Retention Time
Years
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PHYSICAL DIMENSIONS
48-Pin Standard TSOP (measured in millimeters)
0.10
C
2
A2
N
1
SEE DETAIL B
-B-
-A-
5
E
e
9
N
2
N
2
---- + 1
----
5
4
D1
A1
-C-
D
SEATING
PLANE
B
0.08MM (0.0031”)
b
M
C A-B S
6
7
A
WITH
PLATING
B
SEE DETAIL A
(c)
c1
7
BASE
METAL
b1
R
c
SECTION B-B
GAUGE
PLANE
0.25MM
(0.0098”) BSC
e/2
θ°
PARALLEL TO
SEATING PLANE
L
-X-
X = A OR B
DETAIL A
DETAIL B
NOTES:
Package
TS 48
JEDEC
MO-142 (B) DD
1. Controlling dimensions are in millimeters(mm). (Dimensioning
and tolerancing conforms to ANSI Y14.5M-1982)
Symbol
MIN
-
NOM
MAX
2. Pin 1 identifier for standard pin out (Die up).
A
A1
A2
b1
b
-
1.20
0.15
1.05
0.23
3. Pin 1 identifier for reverse pin out (Die down): Ink or Laser mark
4. To be determined at the seating plane. The seating plane is def-
ined as the plane of contact that is made when the package lea-
ds are allowed to rest freely on a flat horizontal surface.
5. Dimension D1 and E do not include mold protrusion. Allowable
mold protrusion is 0.15mm (0.0059”) per side.
0.05
0.95
0.17
0.17
0.10
0.10
19.80
18.30
11.90
-
1.00
0.20
0.22
0.27
6. Dimension b does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.0031”) total in excess
of b dimension at max. material condition. Minimum space
between protrusion and an adjacent lead to be 0.07mm
(0.0028”).
c1
c
-
0.16
0.21
-
20.00
18.40
12.00
0.50 BASIC
0.60
D
20.20
18.50
12.10
7. These dimensions apply to the flat section of the lead between
0.10mm (0.0039”) and 0.25mm (0.0098”) from the lead tip.
8. Lead coplanarity shall be within 0.10mm (0.004”) as measured
from the seating plane.
D1
E
e
9. Dimension “e” is measured at the centerline of the leads.
L
0.50
0°
0.70
5°
θ
3°
R
N
0.08
-
0.20
48
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PHYSICAL DIMENSIONS
48-Ball FBGA (6 x 8 mm)
0.20
(4x)
D1
A
D
H
G F
E
D
C
B
A
6
5
4
7
SE
e
E
E1
3
2
1
6
b
7
SD
B
A1 CORNER INDEX MARK 11
PIN 1 ID.
0.15 M Z A B
0.08 M Z
10
//
0.25
Z
A2
A
0.08
Z
Z
A1
NOTES:
PACKAGE
JEDEC
xFBD 048
N/A
1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. All dimensions are in millimeters.
6.00 mm x 8.00 mm PACKAGE
3. Ball position designation per JESD 95-1, SPP-010.
4. e represents the solder ball grid pitch.
5. Symbol “MD” is the ball row matrix size in the “D” direction.
Symbol “ME” is the ball column matrix size in the “E” direct-
ion. N is the maximum number of solder balls for matrix si-
ze MD X ME.
SYMBOL
A
MIN
NOM
MAX
1.10
NOTE
OVERALL THICK
NESS
A1
A2
D
0.21
0.7
0.25
0.76
0.29
0.82
BALL HEIGHT
BODY THICKNESS
BODY SIZE
8.00 BSC
6. Dimension “b” is measured at the maximum ball diameter
in a plane parallel to datum Z.
E
6.00 BSC
5.60 BSC
4.00 BSC
8
BODY SIZE
D1
E1
MD
BALL FOOTPRINT
BALL FOOTPRINT
7. SD and SE are measured with respect to datums A and B
and define the position of the center solder ball in the out-
er row. When there is an odd number of solder balls in the
outer row parallel to the D or E dimension, respectively, SD
or SE = 0.000 when there is an even number of solder balls
in the outer row, SD or SE = e/2
8. “X” in the package variations denotes part is outer qualifi-
cation.
9. “+” in the package drawing indicate the theoretical center
of depopulated balls.
ROW MATRIX SIZED
DIRECTION
ME
6
ROW MATRIX SIZED
DIRECTION
N
48
TOTAL BALL COUNT
BALL DIAMETER
BALL PITCH
b
0.30
0.35
0.40
0.80 BSC
0.40 BSC
e
SD / SE
SOLDER BALL
PLACEMENT
10. For package thickness A is the controlling dimension.
11. A1 corner to be indentified by chamfer, ink mark, metalli-
zed markings indention or other means.
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ORDERNG INFORMATION
Standard Products
ESI standard products are available in several package and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the following:
ES 29 LV 160 X X - XX
X
X
X X
TEMPERATURE RANGE
Blank : Commercial (0oC to + 70oC)
I
:
Industrial (- 40oC to + 85oC)
Pb-free
C
:
Pb product
G
:
Pb-free product
PACKAGE TYPE
T : Standard TSOP (48-pin), W : FBGA(48-ball)
VOLTAGE RANGE
Blank : 2.7 ~ 3.6V
R
: 3.0 ~ 3.6V
SPEED OPTION
70 : 70ns 80 : 80ns
90 : 90ns
12 : 120ns
SECTOR ARCHITECTURE
Blank : Uniform sector
T
B
:
:
Top sector
Bottom sector
TECHNOLOGY
D : 0.18um E : 0.15um
F : 0.13um
DENSITY & ORGANIZATION
400 : 4M ( x8 / x16)
160 : 16M ( x8 / x16)
640 : 64M ( x8 / x16)
800 : 8M ( x8 / x16)
320 : 32M ( x8 / x16)
POWER SUPPLY AND INTERFACE
F
: 5.0V
LV : 3.0V
DL
: 3.0V, Dual Bank
DS : 1.8V, Dual Bank
BDS : 1.8V, Burst mode, Dual Bank
COMPONENT GROUP
29 : Flash Memory
EXCEL SEMICONDUCTOR
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Product Selection Guide
Industrial Device
Part No.
Speed Vcc
Boot Sector
Top
Ball Pitch/Size
Package
Pb
Body Size
ES29LV800DT-70TGI
ES29LV800DT-70TCI
ES29LV800DB-70TGI
ES29LV800DB-70TCI
ES29LV800DT-90TGI
ES29LV800DT-90TCI
ES29LV800DB-90TGI
ES29LV800DB-90TCI
ES29LV800DT-12TGI
ES29LV800DT-12TCI
ES29LV800DB-12TGI
ES29LV800DB-12TCI
70ns
70ns
70ns
70ns
90ns
90ns
90ns
90ns
2.7 - 3.6V
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
Pb-free
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
Top
-
Bottom
Bottom
Top
Pb-free
-
Pb-free
Top
-
Bottom
Bottom
Top
Pb-free
-
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
Pb-free
Top
-
Bottom
Bottom
Pb-free
-
ES29LV800DT-70WGI
ES29LV800DT-70WCI
ES29LV800DB-70WGI
ES29LV800DB-70WCI
ES29LV800DT-90WGI
ES29LV800DT-90WCI
ES29LV800DB-90WGI
ES29LV800DB-90WCI
ES29LV800DT-12WGI
ES29LV800DT-12WCI
ES29LV800DB-12WGI
ES29LV800DB-12WCI
70ns
70ns
70ns
70ns
90ns
90ns
90ns
90ns
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
Top
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
Pb-free
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
Top
-
Bottom
Bottom
Top
Pb-free
-
Pb-free
Top
-
Bottom
Bottom
Top
Pb-free
-
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
Pb-free
Top
-
Bottom
Bottom
Pb-free
-
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Rev. 1D January 5, 2006
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Excel Semiconductor inc.
Product Selection Guide
Commercial Device
Part No.
Speed Vcc
Boot Sector
Top
Ball Pitch/Size
Package
Pb
Body Size
ES29LV800DT-70TG
ES29LV800DT-70TC
ES29LV800DB-70TG
ES29LV800DB-70TC
ES29LV800DT-90TG
ES29LV800DT-90TC
ES29LV800DB-90TG
ES29LV800DB-90TC
ES29LV800DT-12TG
ES29LV800DT-12TC
ES29LV800DB-12TG
ES29LV800DB-12TC
70ns
70ns
70ns
70ns
90ns
90ns
90ns
90ns
2.7 - 3.6V
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
48-pin TSOP
Pb-free
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
Top
-
Bottom
Bottom
Top
Pb-free
-
Pb-free
Top
-
Bottom
Bottom
Top
Pb-free
-
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
Pb-free
Top
-
Bottom
Bottom
Pb-free
-
ES29LV800DT-70WG
ES29LV800DT-70WC
ES29LV800DB-70WG
ES29LV800DB-70WC
ES29LV800DT-90WG
ES29LV800DT-90WC
ES29LV800DB-90WG
ES29LV800DB-90WC
ES29LV800DT-12WG
ES29LV800DT-12WC
ES29LV800DB-12WG
ES29LV800DB-12WC
70ns
70ns
70ns
70ns
90ns
90ns
90ns
90ns
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
2.7 - 3.6V
Top
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
0.8mm/0.3mm
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
48-Ball FBGA
Pb-free
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
6mm x 8mm
Top
-
Bottom
Bottom
Top
Pb-free
-
Pb-free
Top
-
Bottom
Bottom
Top
Pb-free
-
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
120ns 2.7 - 3.6V
Pb-free
Top
-
Bottom
Bottom
Pb-free
-
49
Rev. 1D January 5, 2006
ES29LV800D
E S I
E S I
Excel Semiconductor inc.
Document Title
8M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage method
is changed from VID to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method is
Rev. 0B
Apr. 23, 2004
added.
3. The typical byte and word program time are changed from 5us/7us to
6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm.
1. The preliminary is removed from the datasheet.
2. The 44 pin SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The VIL(max) is changed from 0.8V to 0.5V.
Rev. 1A
Dec. 1, 2004
7. The overall thickness of FBGA , A (max), is changed from 1.20 to
1.10. Therefore, ball height (A1) and body thickness (A2) also is
changed accordingly.
8. The ball diameter of FBGA, b(min), b(nom), b(max), is changed from
0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.
1. The arrow from Erase Suspend Read to Read is changed to Sector
Rev. 1B
Dec. 13, 2004
Erase.
2. VLKO(min), 2.3V is added
Rev. 1C
Rev. 1D
Sep. 30, 2005
Jan. 5, 2006
1. Add tVLHT parameter (page 42)
1. Add RoHS-Compliant Package Option
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ESI office.
50
Rev. 1D January 5, 2006
ES29LV800D
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