MMUN2214RLT1 [ETL]
Bias Resistor Transistor; 偏置电阻晶体管
| 型号： | MMUN2214RLT1 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Bias Resistor Transistor |
| 文件： | 总8页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
PIN3
Collector
(output)
3
PIN1
base
R1
(Input)
R2
1
PIN2
Emitter
2
(Ground)
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Symbol
VCBO
V CEO
IC
Value
Unit
Vdc
Collector-Base Voltage
50
50
Collector-Emitter Voltage
Vdc
Collector Current
Total Power Dissipation @ T A = 25°C (1)
100
200
1.6
mAdc
mW
P D
Derate above 25°C
mW/°C
THERMAL CHARACTERISTICS
Rating
Symbol
RθJA
Value
625
Unit
°C/W
°C
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TJ , Tstg
–65 to +150
260
°C
T L
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MMUN2211RLT1
A8A
10
10
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1(2)
MMUN2216RLT1(2)
MMUN2230RLT1(2)
MMUN2231RLT1(2)
MMUN2232RLT1(2)
MMUN2233RLT1(2)
MMUN2234RLT1(2)
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
22
47
10
10
4.7
1
22
47
47
1
2.2
4.7
4.7
22
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Q2–1/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICBO
I CEO
I EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
nAdc
nAdc
mAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211RLT1
-
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
-
-
-
-
-
-
-
-
-
-
Collector-Base Breakdown Voltage (IC=10mA, IE=0)
V(BR)CBO
V(BR)CEO
50
50
Vdc
Vdc
(3)
Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0)
-
(3)
ON CHARACTERISTICS
DC Current Gain
MMUN2211RLT1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
-
60
100
140
140
350
350
5.0
15
-
(VCE = 10 V, IC = 5.0 mA)
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
-
-
-
-
-
-
-
30
-
200
150
-
-
-
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
(IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RLT1
(IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RLT1
MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1
Output Voltage (on)
VCE(sat)
0.25
Vdc
Vdc
VOL
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
MMUN2211RLT1
MMUN2212RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
MMUN2213RLT1
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
-
-
-
-
-
-
-
-
-
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ)
-
VOH
4.9
Vdc
(VCC=5.0V,VB=0.050V, RL=1.0kΩ)
(VCC=5.0V,VB=0.25V, RL=1.0kΩ)
MMUN2230RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Q2–2/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
ON CHARACTERISTICS
Input Resistor
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
R1
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
k Ω
47
10
7.0
10
13
3.3
4.7
1.0
2.2
4.7
4.7
22
6.1
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
0.8
28.6
1.2
Resistor Ratio MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 R1/R2
MMUN2214RLT1
1.0
0.21
—
0.17
—
0.25
—
MMUN2215RLT1 MMUN2216RLT1
MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1
MMUN2233RLT1
0.8
1.0
0.1
0.47
1.2
0.055
0.38
0.185
0.56
MMUN2234RLT1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Q2–3/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
250
200
150
100
50
1
I
C /I B =10
T
A = –25°C
25°C
0.1
0.01
75°C
R
θJA = 625°C/W
0
0.001
–50
0
50
10
150
0
20
40
60
80
AMBIENTTEMPERATURE(°C)
I C , COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. V
versus I
CE(sat)
C
1000
100
10
4
3
2
1
0
V
CE = 10 V
f = 1 MHz
E = 0 V
A = 25°C
l
T
A =75°C
25°C
–25°C
T
1
10
100
0
10
20
30
40
50
V
R , REVERSE BIAS VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance
Figure 3. DC Current Gain
100
10
25°C
V
O = 0.2 V
T
A = –25°C
75°C
T
A = –25°C
10
1
25°C
75°C
1
0.1
0.01
V
O = 5 V
0.001
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V in , INPUT VOLTAGE (VOLTS)
Figure 5. V versus I
I C , COLLECTOR CURRENT (mA)
Figure 6. V versus I
CE(sat)
C
CE(sta)
C
Q2–4/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
1
1000
V
CE = 10 V
I
C /I B =10
T
A = –25°C
25°C
75°C
T
A =75°C
25°C
0.1
–25°C
100
0.01
0.001
10
0
20
40
60
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
Figure 7. V CE(sat) versus I C
4
3
2
1
0
100
75°C
25°C
f = 1 MHz
E = 0 V
A = 25°C
T
A = –25°C
l
10
1
T
0.1
0.01
V
O = 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O = 0.2 V
T
A = –25°C
75°C
10
25°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q2–5/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213RLT1
10
1
1000
T
A = –25°C
I
C /I B =10
V
CE = 10 V
25°C
T
A =75°C
75°C
25°C
–25°C
100
0.1
0.01
10
0
20
40
60
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
Figure 12. V CE(sat) versus I C
1
0.8
0.6
0.4
0.2
0
100
25°C
75°C
f = 1 MHz
E = 0 V
A = 25°C
l
T
A = –25°C
10
1
T
0.1
0.01
V
O = 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O = 2 V
T
A=–25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
Q2–6/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214RLT1
1
300
V
T
A =75°C
25°C
T
A = –25°C
25°C
I
C /I B =10
CE= 10V
250
0.1
200
150
100
50
–25°C
75°C
0.01
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
Figure 17. V CE(sat) versus I C
100
4
3.5
3
75°C
25°C
f = 1 MHz
E = 0 V
A= 25°C
l
T
2.5
2
T
A = –25°C
10
1.5
1
V
O = 5 V
0.5
0
1
0
2
4
6
8
10 15
20 25 30 35 40
45 50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
T
A = –25°C
V
O = 0.2 V
25°C
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Q2–7/8
MMUN2211RLT1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12V
ISOLATED
LOAD
FROM µP OR
OTHERLOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12V
VCC
OUT
IN
LOAD
Figure 24. Inexpensive, Unregulated Current
Source
Figure 23. Open Collector Inverter: Inverts
the Input Signal
Q2–8/8
相关型号：
MMUN2214T1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB,
MOTOROLA
©2020 ICPDF网 联系我们和版权申明