BAT54RALT1 [ETL]

Schottky Barrier Diodes; 肖特基势垒二极管


型号：	BAT54RALT1
厂家：	E-TECH ELECTRONICS LTD
描述：	Schottky Barrier Diodes 肖特基势垒二极管二极管
文件：	总2页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Schottky Barrier Diodes

BAT54RALT1

These Schottky barrier diodes are designed for high speed switch-

ing applications, circuit protection, and voltage clamping. Extremely

low forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

30 VOLTS

SCHOTTKY BARRIER

DETECTOR AND

SWITCHING

• Extremely Fast Switching Speed

DIODES

• Low Forward Voltage — 0.35 Volts (Typ) @ I _F= 10 mAdc

CATHODE

ANODE

CASE 318–08, STYLE 12

SOT–23 (TO–236AB)

CATHODE

DEVICE MARKING

BAT54ALT1 = B6

MAXIMUM RATINGS (T _J= 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Max

Unit

V _R

P _F

Volts

Forward Power Dissipation

@ T _A= 25°C

225

1.8

Derate above 25°C

Operating Junction

mW/°C

T _J

Temperature Range

Storage Temperature Range

–55 to +150

°C

T _stg

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

V _(BR)R

C _T

Min

—

Typ

—

Max

—

Unit

Volts

Reverse Breakdown Voltage (I _R= 10 µA)

Total Capacitance (V _R= 1.0 V, f = 1.0 MHz)

Reverse Leakage (V _R= 25 V)

7.6

I _R

—

0.5

2.0

0.24

0.5

1.0

µAdc

Vdc

Forward Voltage (I _F= 0.1 mAdc)

Forward Voltage (I _F= 30 mAdc)

Forward Voltage (I _F= 100 mAdc)

Reverse Recovery Time

V _F

—

0.22

0.41

0.52

V _F

—

V _F

—

t _rr

—

5.0

(I _F= I _R= 10 mAdc, I _R(REC)= 1.0 mAdc) Figure 1

Forward Voltage (I _F= 1.0 mAdc)

Forward Voltage (I _F= 10 mAdc)

V _F

—

0.29

0.35

0.32

0.40

Vdc

G10–1/2

BAT54RALT1

2.0 k

100 µH

0.1 µF

820 Ω

+10 V

I _F

t _p

t _r

0.1µF

I _F

t _rr

10%

90%

D.U.T.

i _R(REC)= 1.0 mA

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

I _R

OUTPUT PULSE

INPUT SIGNAL

V _R

(I _F= I _R= 10 mA; MEASURED

at i _R(REC)= 1.0 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I _F) of 10mA.

Notes: 2. Input pulse is adjusted so I _R(peak)is equal to 10mA.

Notes: 3. t _p» t _rr

Figure 1. Recovery Time Equivalent Test Circuit

1000

100

T _A= 150°C

100

T _A= 125°C

150°C

85°C

1.0

125°C

1.0

T _A= 85°C

T _A= 25°C

0.1

25°C

– 40°C

0.3

0.01

–55°C

0.1

0.001

0.1

0.2

0.4

0.5

0.6

V _F, FORWARD VOLTAGE (VOLTS)

V _R, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward Voltage

Figure 3. Leakage Current

V _R, REVERSE VOLTAGE (VOLTS)

Figure 4. Total Capacitance

G10–2/2

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