Z00607MA/1BA2 [ETC]
TRIAC|600V V(DRM)|800MA I(T)RMS|TO-226AB ; TRIAC | 600V V（ DRM ） | 800MA I（ T） RMS | TO- 226AB\n
| 型号： | Z00607MA/1BA2 |
| 厂家： | 
ETC |
| 描述： | TRIAC|600V V(DRM)|800MA I(T)RMS|TO-226AB
|
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Z00607MA
®
STANDARD
0.8A TRIACS
MAIN FEATURES:
Symbol
A2
Value
0.8
Unit
A
G
I
T(RMS)
A1
V
/V
600
V
DRM RRM
I
5
mA
GT (Q )
1
DESCRIPTION
A1
The Z00607MA is suitable for low power AC
switching applications, such as fan speed, small
light controllers...
G
A2
TO-92
Thanks to low gate triggering current, it can be
directly driven by microcontrollers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
RMS on-state current (full sine wave)
Value
Unit
A
I
TI = 50°C
t = 20 ms
0.8
9
T(RMS)
I
Non repetitive surge peak on-state cur-
rent (full cycle, Tj initial = 25°C)
F = 50 Hz
F = 60 Hz
A
TSM
t = 16.7 ms
9.5
²
²
²
tp = 10 ms
0.55
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 110°C
20
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
tp = 20 µs
Tj = 110°C
Tj = 110°C
1
A
GM
P
Average gate power dissipation
0.1
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 110
stg
°C
T
j
September 2000 - Ed: 3
1/5
Z00607MA
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
Unit
I
(1)
I - II - III
IV
5
7
mA
G
MAX.
V
V
= 12 V
R = 30 Ω
D
L
V
ALL
MAX.
1.3
V
GT
V
ALL
MIN.
0.2
= V
R = 3.3 kΩ Tj = 110°C
V
GD
D
DRM
L
I
(2)
I = 200 mA
MAX.
5
mA
mA
H
T
I
I
= 1.2 I
I - III - IV MAX.
10
20
10
1.5
G
GT
L
II
dV/dt (2)
V
= 67 %V
gate open Tj = 110°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 0.35 A/ms
Tj = 110°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V
(2)
(2)
I
= 1.1 A
tp = 380 µs
Tj = 25°C
MAX.
MAX.
MAX.
1.5
0.95
420
5
V
V
TM
TM
V
Threshold voltage
Tj = 110°C
Tj = 110°C
Tj = 25°C
Tj = 110°C
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
= 600 V
RRM
DRM
RRM
DRM
MAX.
0.1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
°C/W
R
Junction to lead (AC)
Junction to ambient
60
th(j-l)
R
150
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage
600 V
Sensitivity
5 mA
Type
Standard
Package
TO-92
Z00607MA
ORDERING INFORMATION
Blank
Z 006 07 M A
1BA2
TRIAC
SERIES
PACKING MODE:
1BA2: Bulk
VOLTAGE:
M: 600V
PACKAGE:
A:TO-92
2BL2: Ammopack
CURRENT: 0.8A
SENSITIVITY:
07: 5mA
2/5
Z00607MA
OTHER INFORMATION
Part Number
Base
quantity
Packing
mode
Marking
Weight
Z00607MA 1BA2
Z00607MA 2BL2
Z00607MA
Z00607MA
0.2 g
0.2 g
2500
2500
Bulk
Ammopack
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: RMS on-state current versus ambient
on-state current (full cycle).
temperature (full cycle).
P(W)
IT(RMS)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Rth(j-a)=Rth(j-l)
Rth(j-a)=150°C/W
IT(RMS)(A)
0.1
0.0
0.1
Tamb(°C)
0.0
0
10 20 30 40 50 60 70 80 90 100 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
K=[Zth(j-a)/Rth(j-a)]
2.5
1.00
IGT
2.0
1.5
IH & IL
0.10
1.0
0.5
Tj(°C)
tp(s)
0.01
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
-40
-20
0
20
40
60
80
100 120
3/5
Z00607MA
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
a
tp < 10ms, and corresponding value of I²t.
ITSM(A)
ITSM (A), I²t (A²s)
10
9
8
200.0
Tj initial=25°C
100.0
10.0
1.0
dI/dt limitation:
20A/µs
t=20ms
ITSM
One cycle
Non repetitive
Tj initial=25°C
7
6
5
4
3
2
1
0
Repetitive
Tamb=25°C
I²t
tp (ms)
Number of cycles
0.1
0.01
0.10
1.00
10.00
1
10
100
1000
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
ITM(A)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
10.0
8.0
6.0
4.0
2.0
Tj=Tj max.
1.0
Tj=25°C
Tj max.
Vto= 0.95 V
Rd= 420 mΩ
VTM(V)
(dV/dt)c (V/µs)
0.0
0.1
0.1
1.0
10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
0
10 20 30 40 50 60 70 80 90 100 110
4/5
Z00607MA
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
A
a
A
B
C
D
E
F
a
1.35
0.053
B
C
4.70
0.185
2.54
0.100
4.40
0.173
0.500
12.70
F
D
E
3.70
0.45
0.146
0.017
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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