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WFD_U4N60 [ETC]

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WFD_U4N60
型号： WFD_U4N60
厂家： ETC    ETC
描述：

群方电子有限公司， 我公司代理经销商FAIRCHTLD(仙童)，万裕，威士顿，EVERLTGHT,UTC,ON,IR,TI,MPS等品牌的元器件IC,热忱为广大生产商提供服务，欢迎前来洽谈订购！ 联系人： 乌小姐 TEL: 0755-23051325 QQ: 2355819029 陈小姐 TEL: 0755-28197007 QQ: 2355819022 赖小姐 TEL: 0755-83722630 QQ: 2355819025 张先生 TEL: 0755-23574585 QQ: 2355819014 FAX:0755-28199449 邮箱：2355819029@qq.com 公司网址：http://qunfangdianzi3.ic37.com/ 公司地址：深圳市福田区中航路国利大厦A座1008室

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Wisdom  
WFD/U4N60  
N-Channel MOSFET  
Features  
{
2. Drain  
Symbol  
■
R
(Max 2.5 Ω )@V =10V  
DS(on) GS  
●
■
■
■
■
Gate Charge (Typical 15nC)  
Improved dv/dt Capability, High Ruggedness  
100% Avalanche Tested  
◀
▲
1. Gate  
●
●
{
Maximum Junction Temperature Range (150°C)  
3. Source  
{
General Description  
D-PAK, I-PAK  
This Power MOSFET is produced using Wisdom’s  
advanced planar stripe, DMOS technology. This latest technology  
has been especially designed to minimize on-state resistance,  
have a high rugged avalanche characteristics. These devices are  
well suited  
2
1
for high efficiency switch mode power supplies, active power factor  
correction, electronic lamp ballasts based on half bridge topology.  
3
1
2
3
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
600  
Units  
VDSS  
Drain to Source Voltage  
V
A
Continuous Drain Current(@TC = 25°C)  
3.9  
ID  
Continuous Drain Current(@TC = 100°C)  
2.5  
A
A
IDM  
Drain Current Pulsed  
(Note 1)  
11.2  
VGS  
EAS  
Gate to Source Voltage  
V
mJ  
±
30  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
(Note 2)  
(Note 1)  
(Note 3)  
218  
4.9  
EAR  
mJ  
dv/dt  
4.5  
V/ns  
W
Total Power Dissipation(@TC = 25 °C)  
49  
PD  
Derating Factor above 25 °C  
0.39  
W/°C  
°C  
TSTG, TJ  
TL  
Operating Junction Temperature & Storage Temperature  
- 55 ~ 150  
Maximum Lead Temperature for soldering purpose,  
1/8 from Case for 5 seconds.  
300  
°C  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min.  
Typ.  
Max.  
RèJC  
RèJA  
RèJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
-
-
-
-
-
-
2.56  
50  
°C/W  
°C/W  
°C/W  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
Copyright@Wisdom Semiconductor Inc., All rights reserved.  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  
WFD/U4N60  
Electrical Characteristics  
( TC = 25 °C unless otherwise noted )  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
VGS = 0V, I D = 250uA  
Drain-Source Breakdown Voltage  
600  
-
-
-
-
V
Δ
BVDSS  
/
Breakdown Voltage Temperature  
coefficient  
ID = 250uA, referenced to 25 °C  
0.6  
V/°C  
Δ
TJ  
VDS = 600V, VGS = 0V  
VDS = 480V, TC = 125 °C  
VGS = 30V, VDS = 0V  
VGS = -30V, VDS = 0V  
-
-
-
-
-
-
-
-
10  
uA  
uA  
nA  
nA  
IDSS  
Drain-Source Leakage Current  
100  
100  
-100  
Gate-Source Leakage, Forward  
Gate-source Leakage, Reverse  
IGSS  
On Characteristics  
VGS(th)  
VDS = VGS, ID = 250uA  
VGS =10 V, I D = 1.4A  
Gate Threshold Voltage  
2.0  
-
-
4.0  
2.5  
V
Static Drain-Source On-state Resis-  
tance  
RDS(ON)  
2.0  
Ω
Dynamic Characteristics  
Ciss  
-
-
-
Input Capacitance  
545  
60  
8
710  
80  
pF  
Coss  
Output Capacitance  
VGS =0 V, VDS =25V, f = 1MHz  
Crss  
Reverse Transfer Capacitance  
11  
Dynamic Characteristics  
td(on)  
-
-
-
-
-
-
Turn-on Delay Time  
10  
35  
45  
40  
15  
2.8  
30  
80  
100  
90  
20  
-
VDD =300V, I D =4.0A, RG =25Ω  
tr  
td(off)  
tf  
Rise Time  
ns  
Turn-off Delay Time  
Fall Time  
(Note 4, 5)  
Qg  
Total Gate Charge  
Gate-Source Charge  
VDS =480V, VGS =10V, I D =4.0A  
(Note 4, 5)  
Qgs  
nC  
Qgd  
-
Gate-Drain Charge(Miller Charge)  
6.2  
-
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
2.8  
Unit.  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Integral Reverse p-n Junction  
Diode in the MOSFET  
-
-
-
-
-
-
A
ISM  
11.2  
1.4  
VSD  
IS =2.8A, VGS =0V  
V
trr  
Reverse Recovery Time  
-
-
300  
2.2  
-
-
ns  
uC  
IS=4.0A, VGS=0V, dIF/dt=100A/us  
Qrr  
Reverse Recovery Charge  
※ NOTES  
1. Repeativity rating : pulse width limited by junction temperature  
2. L = 25mH, I =4.0A, V  
AS  
= 50V, R = 25Ω , Starting T = 25°C  
DD  
G
J
3. I  
≤
4.0A, di/dt  
4. Pulse Test : Pulse Width  
5. Essentially independent of operating temperature.  
≤
200A/us, V  
≤
BV  
,
Starting T = 25°C  
SD  
DD  
DSS  
J
≤
300us, Duty Cycle  
≤
2%  
Copyright@Wisdom Semiconductor Inc., All rights reserved.  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 w蔟ww凫.fineprint.cn  
Typical Characteristics  
V
S
1G 5.0  
1
10  
Top :  
V
1
10  
10.0V  
8.0V  
7.0V  
6.5V  
6.0V  
5.5V  
5.0  
Bottom:  
0
10  
150oC  
0
10  
25oC  
-1  
10  
-55o C  
※
Notes:  
※
N
otes:  
250µ s Pulse Test  
1. VDS =40V  
2. 250µ s Pulse Test  
1.  
2.  
T
=25  
℃
C
-1  
10  
-1  
10  
0
10  
1
10  
2
4
6
8
10  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
12  
1
10  
10  
8
VGS =10V  
V GS  
=
6
0
10  
20V  
4
150℃  
25℃  
※
Notes:  
2
1. VGS = 0V  
2. 250µ s Pulse Test  
※
Note: T =25  
℃
J
-1  
0
0
10  
2
4
6
ID, DrainCurrent [A]  
8
10  
12  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD, Source-Drainvoltage [V]  
Figure 3. On-Resistance Variation vs  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation with Source Current  
and Temperature  
1000  
500  
0
12  
10  
8
C
=
C
gs  
+C (C = shorted)  
gd ds  
iss  
C
=
Cds + C  
C
oss  
gd  
V
DS = 120V  
DS = 300V  
DS = 480V  
C
rss  
gd  
=
V
C
iss  
V
6
Coss  
4
※
Notes :  
C
1. V =0 V  
2. f = 1 MHz  
rss  
GS  
2
※
Note : I =4.0 A  
D
0
-1  
100  
VDS, Drain-Source Voltage [V]  
101  
0
4
8
12  
16  
20  
10  
QG, Total Gate Charge [nC]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  
Typical Characteristics  
(Continued)  
1.2  
1.1  
1.0  
0.9  
0.8  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
※
Notes :  
1. VGS =0V  
2. I =250 µ A  
※
Notes:  
D
1. VGS = 10 V  
2. I =2.0 A  
D
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, JunctionTemperature [oC]  
T , Junction Temperature[oC]  
J
Figure 7. Breakdown Voltage Variation  
vs Temperature  
Figure 8. On-Resistance Variation  
vs Temperature  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs Case Temperature  
Figure 11. Transient Thermal Response Curve  
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Gate Charge Test Circuit & Waveform  
V
GS  
SameType  
asDUT  
50KΩ  
Q
g
200nF  
12V  
10V  
300nF  
V
GS  
Q
gs  
Q
gd  
V
DS  
DUT  
3mA  
Charge  
Resistive Switching Test Circuit & Waveforms  
R
L
V
DS  
90%  
V
DS  
V
DD  
V
GS  
R
G
V 10%  
GS  
DUT  
10V  
t
t
t
t
t
Unclamped Inductive Switching Test Circuit & Waveforms  
BV  
DSS  
--------------------  
BV -V  
DSS DD  
L
1
2
2
----  
E = LIAS  
AS  
V
DS  
BV  
DSS  
IAS  
I D  
R
G
V
DD  
ID(t)  
V
DD  
V (t)  
DS  
10V  
DUT  
tp  
tp  
Time  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  
Peak Diode Recovery dv/dt Test Circuit & Waveforms  
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