UNR5174 [ETC]

Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n


型号：	UNR5174
厂家：	ETC
描述：	Composite Device - Transistors with built-in Resistor 复合器件 - 晶体管具有内置电阻\n 晶体晶体管
文件：	总3页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Transistors with built-in Resistor

UNR5174

Silicon PNP epitaxial planar transistor

Unit : mm

+±.1±

+±.1

±.3

–±.±

±.15

For digital circuits

–±.±5

I Features

• High forward current transfer ratio h_FE

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing

(±.65) (±.65)

1.3±±.1

2.±±±.2

1±°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

−50

Unit

1: Base

2: Emitter

3: Collector

−50

EIAJ: SC-70

SMini3-G1 Package

−100

°C

Total power dissipation

Junction temperature

Storage temperature

P_T

150

Marking Symbol: 7P

Internal Connection

T_j

150

T_stg

−55 to +150

°C

R₁

(10 kΩ)

R₂

(47 kΩ)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector cutoff current

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

Conditions

Min

−50

Typ

Max

Unit

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

− 0.1

− 0.5

− 0.2

µA

Emitter cutoff current

DC current gain

V_CE= −10 V, I_C= −5 mA

I_C= −10 mA, I_B= − 0.3 mA

Collector to emitter saturation voltage

High-level output voltage

Low-level output voltage

Input resistance

V_CE(sat)

V_OH

V_OL

− 0.25

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ −4.9

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

+30%

0.25

1.2

R₁

−

30%

0.21

0.95

kΩ

Resistance ratio

R₁/ R₂

V_F

0.17

Forward voltage (DC)

Gain bandwidth product

I_F= 100 mA

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

MHz

Publication date: May 2002

SJH00046AED

UNR5174

P_T T_a

I_C V_CE

V_CE(sat) I_C

−10

−1

−140

−120

−100

−80

−60

−40

−20

160

140

120

100

I_C/ I_B= 10

I_B= −1.0 mA

T_a= 25°C

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

T_a= 75°C

− 0.1

−25°C

− 0.2 mA

25°C

− 0.1 mA

− 0.01

−1

−10

−100

−1000

−2

−4

−6

−8

−10 −12

20 40 60 80 100 120 140 160

(

)

Collector current I_CmA

( )

Collector to emitter voltage V_CEV

(

)

Ambient temperature T_a°C

h_FE I_C

C_ob V_CB

I_O V_IN

−100

−10

−1

300

250

200

150

100

V_O= −5 V

T_a= 25°C

V_CE= −10 V

f = 1 MHz

T_a= 25°C

T_a= 75°C

25°C

−25°C

− 0.1

− 0.4 − 0.6 − 0.8 −1 −1.2 −1.4 −1.6

−1

−10

−100

−1000

−5 −10 −15 −20 −25 −30 −35 −40

(

)

Collector current I_CmA

( )

(

)

Input voltage V_IN

Collector to base voltage V_CB

V_IN I_O

−100

V_O= − 0.2 V

T_a= 25°C

−10

−1

− 0.1

−1

−10

−100

(

)

Output current I_OmA

SJH00046AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this book

(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-

ment if any of the products or technologies described in this book and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be ex-ported or taken out of Japan.

(2) The technical information described in this book is limited to showing representative characteristics

and applied circuits examples of the products. It neither warrants non-infringement of intellectual

property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this book.

(4) The products described in this book are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this book are subject to change without no-

tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the

products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum

rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,

we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 MAY

UNR5174 [ETC]

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