UNR411L|UN411L [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNR411L|UN411L |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总15页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR411x Series (UN411x Series)
Silicon PNP epitaxial planar type
Unit: mm
4.0 0.2
2.0 0.2
For digital circuits
0.75 max.
■ Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
New S type package, allowing supply with the radial taping
■ Resistance by Part Number
(R1)
(R2)
+0.20
0.45
–0.10
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
+0.20
0.45
–0.10
(2.5) (2.5)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
0.7 0.1
1: Emitter
2: Collector
3: Base
1
2
3
NS-B1 Package
Internal Connection
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
R1
B
C
E
R2
UNR411N
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
−50
V
Collector current
IC
PT
−100
mA
mW
°C
300
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00018DED
1
UNR411x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
V
− 0.1
− 0.5
− 0.01
− 0.1
− 0.2
µA
µA
mA
ICEO
Emitter-base UNR4110/4115/4116/4117 IEBO
cutoff current UNR4113
(Collector open)
UNR4112/4114/411D/
411E/411M/411N
UNR4111
− 0.5
−1.0
−1.5
−2.0
UNR411F/411H
UNR4119
UNR4118/411L
Forward current UNR4118/411L
transfer ratio UNR4119/411D/411F/411H
UNR4111
hFE
VCE = −10 V, IC = −5 mA
20
30
35
UNR4112/411E
60
UNR4113/4114/411M
UNR411N
80
80
400
460
UNR4110 */4115 */4116 */
4117 *
160
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4113
VCE(sat) IC = −10 mA, IB = − 0.3 mA
− 0.25
− 0.2
V
V
V
VOH
VOL
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
−4.9
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCC = −5 V, VB = −10 V, RL = 1 kΩ
VCC = −5 V, VB = −6 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
UNR411D
UNR411E
Transition frequency
Input resistance UNR4118
UNR4119
fT
80
MHz
R1
−30% 0.51 +30%
kΩ
1.0
2.2
4.7
10
UNR411H/411M
UNR4116/411F/411L/411N
UNR4111/4114/4115
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
SJH00018DED
2
UNR411x Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Resistance ratio UNR411M
UNR411N
Symbol
Conditions
Min
Typ
0.047
0.1
Max
Unit
R1/R2
UNR4118/4119
0.08
0.17
0.17
0.37
0.8
0.10
0.21
0.22
0.47
1.0
0.12
0.25
0.27
0.57
1.2
UNR4114
UNR411H
UNR411F
UNR4111/4112/4113/411L
UNR411E
1.70
3.7
2.14
4.7
2.60
5.7
UNR411D
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR4110
IC VCE
VCE(sat) IC
hFE IC
−120
400
300
200
100
0
−100
−10
IC / IB = 10
Ta = 25°C
VCE = –10 V
IB = −1.0 mA
− 0.9 mA
−100
−80
−60
−40
−20
0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3mA
Ta = 75°C
−1
25°C
Ta = 75°C
− 0.2mA
− 0.1mA
−25°C
25°C
−0.1
−25°C
−0.01
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−0.1
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00018DED
3
UNR411x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
−100
−10
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
(
)
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR4111
IC VCE
VCE(sat) IC
hFE IC
−160
−100
−10
−1
160
120
80
IC / IB = 10
Ta = 75°C
25°C
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−120
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−25°C
−80
−40
0
−0.4 mA
Ta = 75°C
25°C
−0.3 mA
−0.2 mA
−0.1
40
−25°C
−0.1 mA
−
0.01
−0.1
0
−1
−1
−10
−100
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
(
)
V
Input voltage VIN
SJH00018DED
4
UNR411x Series
Characteristics charts of UNR4112
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
400
300
200
100
0
−160
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9mA
−0.8mA
−120
−80
−40
0
−0.7mA
−0.6mA
−0.5mA
−0.4mA
Ta = 75°C
25°C
−0.3mA
−0.2mA
Ta = 75°C
−25°C
25°C
−0.1
−25°C
−0.1mA
−
0.01
−0.1
−1
−10
−100
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR4113
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−160
400
300
200
100
0
IC / IB = 10
IB = −1.0 mA
−0.9 mA
Ta = 25°C
VCE = −10 V
Ta = 75°C
25°C
−0.8 mA
−0.7 mA
−0.6 mA
−120
−80
−40
0
−0.5 mA
−0.4 mA
−25°C
−0.3 mA
−0.2 mA
Ta = 75°C
25°C
−0.1
−25°C
− 0.1 mA
−
0.01
−0.1
−1
−10
−100
−1
−10
)
Collector current IC mA
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
(
)
V
Collector-emitter voltage VCE
SJH00018DED
5
UNR411x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
(
)
V
Input voltage VIN
Characteristics charts of UNR4114
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−160
−100
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
−0.6 mA
Ta = 75°C
−0.5 mA
−80
−40
0
−0.4 mA
−0.3 mA
−0.2 mA
25°C
Ta = 75°C
−25°C
25°C
−0.1
−0.1 mA
−25°C
−
0.01
−0.1
−1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−1000
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
V
Input voltage VIN
(
)
Collector-base voltage VCB (V)
Output current IO mA
SJH00018DED
6
UNR411x Series
Characteristics charts of UNR4115
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−100
−10
−1
−160
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−120
Ta = 75°C
−0.6 mA
−0.5 mA
−0.4 mA
25°C
−80
−0.3 mA
−0.2 mA
Ta = 75°C
−25°C
25°C
−0.1
−40
−0.1 mA
−25°C
−
0.01
−0.1
0
−1
−10
−100
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
V
O
= − 0.2 V
VO = −5 V
Ta = 25˚C
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
(
)
V
Input voltage VIN
Characteristics charts of UNR4116
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−160
−100
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
Ta = 75°C
−0.6 mA
−0.5 mA
−80
−0.4 mA
25°C
−0.3 mA
Ta = 75°C
−25°C
25°C
−0.2 mA
−40
−0.1
−0.1 mA
−25°C
−1
0
−
0.01
−0.1
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−10
−100
(
)
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
SJH00018DED
7
UNR411x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
(
)
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR4117
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−120
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−100
−80
−60
−40
−20
0
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−0.4 mA
Ta = 75°C
T
= 75°C
a
−0.3 mA
−0.2 mA
25°C
25°C
−0.1
−25°C
−25°C
−0.1 mA
−
0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
−100
−1000
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
)
Output current IO mA
−10
−100
(
)
Input voltage VIN
V
(
Collector-base voltage VCB (V)
SJH00018DED
8
UNR411x Series
Characteristics charts of UNR4118
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−240
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−160
−0.8 mA
−0.7 mA
Ta = 75°C
25°C
−120
Ta = 75°C
−0.6 mA
−25°C
−0.5 mA
−0.4 mA
−0.3 mA
−0.2 mA
−80
−40
0
25°C
−0.1
−25°C
−0.1 mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
Collector-base voltage VCB (V)
(
)
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR4119
IC VCE
VCE(sat) IC
hFE IC
160
120
80
−240
−100
−10
−1
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−160
Ta = 75°C
−0.7 mA
−120
Ta = 75°C
25°C
−25°C
−80
−40
0
−0.6 mA
−0.5 mA
25°C
40
−0.1
−0.4 mA
−0.3 mA
−0.2 mA
−0.1 mA
−10 −12
−25°C
0
−1
−
0.01
−0.1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
SJH00018DED
9
UNR411x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
V
Input voltage VIN
Collector-base voltage VCB (V)
Characteristics charts of UNR411D
IC VCE
VCE(sat) IC
hFE IC
160
120
80
−60
−
100
IC / IB = 10
IB = − 1.0 mA
− 0.9 mA
Ta = 25˚C
VCE = −10 V
Ta = 75°C
− 0.8 mA
−50
−40
−30
−20
−10
0
−
10
25°C
− 0.3 mA
− 0.2 mA
−25°C
−1
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
25°C
40
−
0.1
− 0.1 mA
−25°C
0
−1
−
0.01
−0.1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
(
)
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
)
Output current IO mA
−10
−100
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
Collector-base voltage VCB (V)
(
(
)
V
Input voltage VIN
SJH00018DED
10
UNR411x Series
Characteristics charts of UNR411E
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−60
−100
−10
IC / IB = 10
IB = −1.0 mA
− 0.9 mA
Ta = 25°C
VCE = −10 V
− 0.8 mA − 0.7 mA
−50
−40
−30
−20
−10
0
− 0.3 mA
− 0.2 mA
−1
Ta = 75°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
25°C
− 0.1 mA
−0.1
25°C
−25°C
−25°C
−0.01
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−0.1
−1
−10
−100
(
)
(
)
V
Collector current IC mA
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR411F
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
Ta = 75°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−200
−160
−120
−80
−40
0
25°C
−25°C
Ta = 75°C
−0.5 mA
25°C
−0.4 mA
−0.3 mA
−0.2 mA
−0.1
40
−25°C
−0.1 mA
−10 −12
−
0.01
−0.1
0
−1
0
−2
−4
−6
−8
−1
−10
−100
−10
−100
−1000
(
)
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
SJH00018DED
11
UNR411x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR411H
IC VCE
VCE(sat) IC
hFE IC
−120
240
200
160
120
80
−100
−10
IC / IB = 10
Ta = 25°C
VCE = −10 V
−100
−80
−60
−40
−20
0
IB = −0.5 mA
−0.4 mA
Ta = 75°C
25°C
−1
Ta = 75°C
25°C
−0.3 mA
−25°C
−0.2 mA
−0.1 mA
−0.1
−0.01
40
−25°C
0
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
−100
−1000
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
VIN IO
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−1
−10
−100
(
)
Output current IO mA
Collector-base voltage VCB (V)
SJH00018DED
12
UNR411x Series
Characteristics charts of UNR411L
IC VCE
VCE(sat) IC
hFE IC
−100
−10
240
200
160
120
80
−240
IC / IB = 10
VCE = −10 V
Ta = 25°C
−200
−160
IB = −1.0 mA
−1
−120
Ta = 75°C
− 0.8 mA
Ta = 75°C
25°C
−80
−40
0
− 0.6 mA
25°C
−25°C
−0.1
−25°C
− 0.4 mA
− 0.2 mA
–10 –12
40
− 0.01
0
−1
−1
−10
−100
−1000
−10
−100
−1000
0
–2
–4
–6
–8
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
Cob VCB
VIN IO
−100
−10
6
5
4
3
2
1
0
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
−1
−10
−100
(
)
Output current IO mA
Collector-base voltage VCB (V)
Characteristics charts of UNR411M
IC VCE
VCE(sat) IC
hFE IC
−140
−100
−10
−1
200
160
120
80
IC / IB = 33.3
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9 mA
Ta = 75°C
25°C
−120
−0.8 mA
−0.7 mA
−100
−25°C
−0.6 mA
−0.5 mA
−80
Ta = 75°C
25°C
−0.4 mA
−60
−40
−20
0
−0.3 mA
−0.2 mA
−25°C
− 0.1
40
−0.1 mA
− 0.01
0
−1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−10
−100
−1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00018DED
13
UNR411x Series
Cob VCB
IO VIN
VIN IO
−1000
−100
−10
−100
−10
10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−1
−1
− 0.1
− 0.01
1
− 0.1
0
−10
−20
−30
−40
0
− 0.5 −1.0
−1.5
−2.0
−2.5
−1
−10
−100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR411N
IC VCE
VCE(sat) IC
hFE IC
−140
−1
− 0.1
− 0.01
300
250
200
150
100
50
IB = −1.0 mA
Ta = 25°C
VCE = −10 V
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
Ta = 75°C
25°C
−120
−100
−80
−60
−40
−20
0
−25°C
−0.4 mA
−0.3 mA
Ta = 75°C
25°C
−25°C
−0.2 mA
−0.1 mA
IC / IB = 10
−10 −100
0
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
− 0.1
−1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
−100
−10
−1
−100
10
VO = −5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−10
1
− 0.1
−1
0
−10
−20
−30
−40
0
− 0.5 −1.0
−1.5
−2.0
−2.5
− 0.1
−1
−10
−100
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00018DED
14
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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