UNR2154|UN2154 [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNR2154|UN2154 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR2154 (UN2154)
Silicon PNP epitaxial planar type
Unit: mm
+0.10
–0.05
0.40
3
+0.10
For digital circuits
0.16
–0.06
■ Features
• High forward current transfer ratio hFE
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
1
2
(0.95) (0.95)
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1.9 0.1
+0.20
2.90
–0.05
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−30
Unit
V
1: Base
2: Emitter
3: Collector
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−30
V
EIAJ: SC-59
Mini3-G1 Package
Collector current
IC
PT
−100
mA
mW
°C
200
Total power dissipation
Junction temperature
Storage temperature
Marking Symbol: EV
Internal Connection
Tj
150
Tstg
−55 to +150
°C
R1(10 kΩ)
B
C
E
R2
(47 kΩ)
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
−30
−30
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
VCB = −30 V, IE = 0
VCE = −30 V, IB = 0
VEB = −3 V, IC = 0
VCE = −10 V, IC = −5 mA
− 0.1
− 0.5
− 0.1
µA
µA
mA
ICEO
IEBO
Forward current
ratio
hFE
80
transfer
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
VCE(sat) IC = −50 mA, IB = − 0.33 mA
− 0.5
−1.2
− 0.2
+30%
V
VOH
VOL
fT
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
−4.9
V
V
80
10
MHz
kΩ
Input resistance
R1
−30%
Resistance ratio
R1/R2
0.213
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00009CED
1
UNR2154
PT Ta
IC VCE
VCE(sat) IC
−200
−150
−100
−50
0
−100
−10
250
200
150
100
50
IC / IB = 10
IB = −1.0 mA
Ta = 25°C
– 0.9 mA
– 0.8 mA
– 0.7 mA
– 0.6 mA
– 0.5 mA
−1
– 0.4 mA
– 0.3 mA
25°C
Ta = 75°C
−25°C
– 0.2 mA
− 0.1
– 0.1 mA
− 0.01
0
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
0
40
80
120
160
Collector-emitter voltage VCE (V)
(
)
Ambient temperature Ta °C
Collector current IC (mA)
hFE IC
Cob VCB
IO VIN
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
300
250
200
150
100
50
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
VCE = −10 V
Ta = 75°C
Ta = 25°C
25°C
−25°C
0
−1
−1
−10
−100
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
−10
−100
−1000
Collector-base voltage VCB (V)
Input voltage VIN (V)
Collector current IC (mA)
VIN IO
−100
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
SJH00009CED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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