UN5215Q [ETC]
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 ; 晶体管| 50V V（ BR ） CEO | 100MA I（C ） | SC- 70\n
| 型号： | UN5215Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70
|
| 文件： | 总18页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
(UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/
521F/521K/521L/521M/521N/521T/521V/521Z)
Silicon NPN epitaxial planer transistor
Unit: mm
2.1 0.1
0.425
1
1.25 0.1
0.425
For digital circuits
3
Features
I
G
2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Resistance by Part Number
I
0.2 0.1
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR5211
UNR5212
UNR5213
UNR5214
UNR5215
UNR5216
UNR5217
UNR5218
UNR5219
UNR5210
UNR521D
UNR521E
UNR521F
UNR521K
UNR521L
UNR521M
UNR521N
UNR521T
UNR521V
UNR521Z
8A
8B
8C
8D
8E
8F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
8H
8I
Internal Connection
8K
8L
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
50
50
V
100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
–55 to +150
˚C
Note.) The Part numbers in the Parenthesis show conventional part number.
1
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = 50V, IE = 0
VCE = 50V, IB = 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
0.4
Unit
µA
Collector cutoff current
UNR5211
ICEO
µA
UNR5212/5214/521E/521D/521M/521N/521T
UNR5213
Emitter
cutoff
current
UNR5215/5216/5217/5210
UNR521F/521K
UNR5219
IEBO
VEB = 6V, IC = 0
mA
UNR5218/521L/521V
UNR521Z
Collector to base voltage
Collector to emitter voltage
UNR5211
VCBO
VCEO
IC = 10µA, IE = 0
50
50
35
60
80
160
30
20
80
6
V
V
IC = 2mA, IB = 0
UNR5212/521E
UNR5213/5214/521M
Forward
current
transfer
ratio
UNR5215*/5216*/5217*/5210*
UNR521F/521D/5219
UNR5218/521K/521L
UNR521N/521T
UNR521V
460
hFE
VCE = 10V, IC = 5mA
400
20
UNR521Z
60
200
0.25
0.25
Collector to emitter saturation voltage VCE(sat)
UNR521V
IC = 10mA, IB = 0.3mA
V
V
V
IC = 10mA, IB = 1.5mA
Output voltage high level
Output voltage low level
VOH
VOL
fT
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VOC = 5V, VB = 3.5V, RL = 1kΩ
VCC = 5V, VB = 10V, RL = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
0.2
0.2
0.2
0.2
UNR5213/521K
UNR521D
UNR521E
V
Transition frequency
150
10
MHz
UNR5211/5214/5215/521K
UNR5212/5217/521T
22
UNR5213/521D/521E/5210
47
Input
resis-
tance
UNR5216/521F/521L/521N/521Z R1
UNR5218
(–30%)
4.7
0.51
1
(+30%)
kΩ
UNR5219
UNR521M/521V
2.2
* hFE rank classification (UNR5125/5216/5217/5210)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Electrical Characteristics (continued) (Ta=25˚C)
I
Parameter
UNR5211/5212/5213/521L
UNR5214
Symbol
Conditions
min
0.8
typ
1.0
max
1.2
Unit
0.17
0.08
0.21
0.1
0.25
0.12
UNR5218/5219
UNR521D
4.7
UNR521E
2.14
0.47
2.13
0.047
0.1
Resis-
tance
ratio
UNR521F/521T
UNR521K
R1/R2
UNR521M
UNR521N
UNR521V
1.0
UNR521Z
0.21
3
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Common characteristics chart
PT — Ta
240
200
160
120
80
40
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
Characteristics charts of UNR5211
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
400
300
200
100
0
100
IC/IB=10
Ta=25˚C
VCE=10V
IB=1.0mA
0.9mA
30
10
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
0.4mA
0.3mA
3
1
60
25˚C
0.3
0.1
25˚C
Ta=75˚C
0.2mA
–25˚C
40
–25˚C
20
0.03
0.01
0.1mA
10
0
0
2
4
6
8
12
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
(
)
Collector to emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
( )
Input voltage VIN V
Collector to base voltage VCB
V
(
)
Output current IO mA
4
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UNR5212
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
100
400
300
200
100
0
IC/IB=10
VCE=10V
Ta=25˚C
30
10
IB=1.0mA
0.9mA
0.7mA
0.6mA
0.5mA
0.8mA
Ta=75˚C
3
1
0.4mA
0.3mA
0.2mA
25˚C
60
0.3
0.1
25˚C
Ta=75˚C
–25˚C
40
–25˚C
20
0.03
0.01
0.1mA
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5213
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
30
0.9mA
0.8mA
0.7mA
0.6mA
Ta=75˚C
25˚C
10
0.5mA
0.4mA
0.3mA
3
1
–25˚C
60
0.3
0.1
Ta=75˚C
25˚C
0.2mA
0.1mA
10
40
–25˚C
20
0.03
0.01
0
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
12
( )
Collector current IC mA
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
5
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Cob — VCB
IO — VIN
VIN — IO
100
6
5
4
3
2
1
0
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
(
)
(
)
( )
V
Output current IO mA
Collector to base voltage VCB
V
Input voltage VIN
Characteristics charts of UNR5214
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
30
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
10
3
1
0.5mA
0.4mA
Ta=75˚C
25˚C
0.3mA
0.2mA
0.1mA
60
0.3
0.1
Ta=75˚C
–25˚C
25˚C
40
20
0.03
0.01
–25˚C
0
0
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
(
)
(
)
Collector current IC mA
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Cob — VCB
IO — VIN
VIN — IO
10000
100
6
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
V
Input voltage VIN
V
Output current IO mA
Collector to base voltage VCB
6
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Characteristics charts of UNR5215
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
30
10
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
3
1
0.4mA
25˚C
0.3mA
0.2mA
0.1mA
60
0.3
0.1
–25˚C
Ta=75˚C
25˚C
40
20
0.03
0.01
–25˚C
0
0
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
12
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5216
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
30
IB=1.0mA
Ta=75˚C
25˚C
0.9mA
10
0.8mA
0.7mA
0.6mA
3
1
0.5mA
0.4mA
–25˚C
0.3mA
0.2mA
60
0.3
0.1
Ta=75˚C
25˚C
40
20
0.03
0.01
0.1mA
–25˚C
0
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
7
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Cob — VCB
IO — VIN
VIN — IO
100
6
5
4
3
2
1
0
10000
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5217
IC — VCE
VCE(sat) — IC
hFE — IC
120
100
80
60
40
20
0
100
400
350
300
250
200
150
100
50
IC/IB=10
Ta=25˚C
VCE=10V
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
30
10
3
1
0.4mA
0.3mA
0.2mA
Ta=75˚C
Ta=75˚C
25˚C
0.3
0.1
25˚C
–25˚C
0.1mA
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
8
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Characteristics charts of UNR5218
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
30
10
IB=1.0mA
0.9mA
0.8mA
0.7mA
3
1
Ta=75˚C
Ta=75˚C
0.6mA
0.5mA
0.4mA
25˚C
0.3
0.1
–25˚C
25˚C
40
0.3mA
0.2mA
0.1mA
40
0.03
0.01
–25˚C
0
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
( )
V
(
)
Collector to base voltage VCB
V
Input voltage VIN
Output current IO mA
Characteristics charts of UNR5219
IC — VCE
VCE(sat) — IC
hFE — IC
100
160
120
80
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
30
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
10
3
1
Ta=75˚C
25˚C
–25˚C
Ta=75˚C
0.3
0.1
0.5mA
0.4mA
25˚C
0.3mA
40
40
0.2mA
0.1mA
0.03
0.01
–25˚C
0
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
( )
Collector current IC mA
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
9
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Cob — VCB
IO — VIN
VIN — IO
10000
100
6
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
(
100
)
( )
V
(
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
V
Characteristics charts of UNR5210
IC — VCE
VCE(sat) — IC
hFE — IC
60
50
40
30
20
10
0
100
400
350
300
250
200
150
100
50
IC/IB=10
IB=1.0mA
0.9mA
0.8mA
Ta=25˚C
VCE=10V
30
10
Ta=75˚C
3
1
0.4mA
0.5mA
25˚C
0.3mA
0.6mA
0.7mA
Ta=75˚C
–25˚C
0.3
0.1
0.1mA
25˚C
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
Collector to emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
10
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Transistors with built-in Resistor
Characteristics charts of UNR521D
IC — VCE
VCE(sat) — IC
hFE — IC
30
25
20
15
10
5
100
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
0.9mA
0.8mA
0.7mA
0.6mA
Ta=75˚C
0.5mA
0.4mA
0.3mA
30
10
25˚C
–25˚C
IB=1.0mA
3
1
0.2mA
0.1mA
0.3
0.1
Ta=75˚C
25˚C
40
–25˚C
0.03
0.01
0
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
Collector to emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
1.5
2.0
2.5
3.0
3.5
4.0
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR521E
IC — VCE
VCE(sat) — IC
hFE — IC
100
160
120
80
60
50
40
30
20
10
0
IB=1.0mA
0.9mA
IC/IB=10
0.7mA
Ta=25˚C
VCE=10V
0.6mA
0.8mA
30
Ta=75˚C
10
25˚C
3
1
–25˚C
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
Ta=75˚C
0.3
0.1
25˚C
40
0.03
0.01
–25˚C
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
( )
Collector current IC mA
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
11
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
1.5
2.0
2.5
3.0
3.5
4.0
(
)
(
)
Collector to base voltage VCB
V
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR521F
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
240
200
160
120
80
100
IC/IB=10
Ta=25˚C
VCE=10V
30
10
0.9mA
0.8mA
0.7mA
0.6mA
3
1
Ta=75˚C
Ta=75˚C
25˚C
–25˚C
IB=1.0mA
0.3
0.1
0.5mA
0.4mA
0.3mA
25˚C
40
40
0.03
0.01
0.2mA
0.1mA
–25˚C
0
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
(
)
Collector to base voltage VCB
V
(
)
(
)
V
Output current IO mA
Input voltage VIN
12
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UNR521K
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
Ta=75˚C
25˚C
IB=1.2mA
1.0mA
1
0.8mA
0.6mA
Ta=75˚C
25˚C
–25˚C
0.1
0.01
0.4mA
0.2mA
–25˚C
40
40
0
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
(
)
Collector to emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
100
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
)
Collector to base voltage VCB
V
(
)
Output current IO mA
Characteristics charts of UNR521L
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
10
1
Ta=75˚C
IB=1.0mA
0.8mA
25˚C
0.6mA
–25˚C
Ta=75˚C
25˚C
0.4mA
0.1
0.01
40
40
–25˚C
0.2mA
0
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
(
)
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
13
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Cob — VCB
IO — VIN
100
10
6
5
4
3
2
1
0
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
0.1 0.3
1
3
10
30
100
1
3
10
30
100
(
)
(
)
V
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR521M
IC — VCE
VCE(sat) — IC
hFE — IC
10
500
400
300
200
100
0
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
3
1
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.3
0.1
Ta=75˚C
Ta=75˚C
25˚C
0.6mA
0.5mA
0.4mA
0.3mA
25˚C
0.03
0.01
–25˚C
0.2mA
0.1mA
–25˚C
40
0.003
0.001
0
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
V
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
104
103
102
101
1
100
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
(
100
)
(
)
(
)
Input voltage VIN
V
Output current IO mA
Collector to base voltage VCB
V
14
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UNR521N
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
10
480
400
320
240
160
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
–25˚C
1
0.4mA
25˚C
0.3mA
60
Ta=75˚C
0.2mA
0.1mA
0.1
0.01
25˚C
40
20
–25˚C
0
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
10
12
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
1000
100
10
100
10
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
1
10
100
0.6
0.8
1
1.2
1.4
0.1
1
10
100
(
)
( )
V
(
)
Collector to base voltage VCB
V
Input voltage VIN
Output current IO mA
Characteristics charts of UNR521T
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
10
480
400
320
240
160
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
–25˚C
1
0.4mA
25˚C
0.3mA
60
Ta=75˚C
0.2mA
0.1
25˚C
40
0.1mA
20
–25˚C
0
0.01
0
0
2
4
6
8
10
12
1
10
100
1000
1
10
100
1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
15
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10
10000
1000
100
10
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
1
10
100
0.1
1
10
100
0.6
0.8
1
1.2
1.4
(
)
(
)
(
)
V
Collector to base voltage VCB
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR521V
IC — VCE
VCE(sat) — IC
hFE — IC
10
240
200
160
120
80
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
1
0.9mA
0.8mA
0.7mA
Ta=75˚C
25˚C
0.6mA
Ta=75˚C
25˚C
60
0.5mA
0.4mA
0.1
40
–25˚C
–25˚C
40
20
0.3mA
0.2mA
0
0.01
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
10
12
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
100
10
6
5
4
3
2
1
0
10000
1000
100
10
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
0.1
1
10
100
1
10
100
0.6
0.8
1
1.2
1.4
(
)
Output current IO mA
(
)
( )
Input voltage VIN V
Collector to base voltage VCB
V
16
UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UNR521Z
IC — VCE
VCE(sat) — IC
hFE — IC
480
400
320
240
160
80
10
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
1
Ta=75˚C
0.4mA
0.3mA
25˚C
Ta=75˚C
25˚C
60
–25˚C
0.2mA
0.1mA
0.1
0.01
40
–25˚C
20
0
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
1000
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
1000
100
10
100
10
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
–1
–10
–100
0.6
0.8
1
1.2
1.4
0.1
1
10
100
(
)
( )
V
(
)
Collector to base voltage VCB
V
Input voltage VIN
Output current IO mA
17
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
相关型号：
UN5216TX
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
©2020 ICPDF网 联系我们和版权申明