SSM01N60 [ETC]
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET; N沟道增强模式功率MOSFET
| 型号： | SSM01N60 |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM01N60H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
BVDSS
RDS(ON)
ID
600V
8Ω
D
S
1.6A
G
Simple drive requirement
Description
G
The SSM01N60H is supplied in the industry-standard TO-252
D
S
TO-252 (H)
TO-251 (J)
package, which is widely preferred for commercial and industrial
surface mount applications, and is well suited for AC/DC converters. The
through-hole version (SSM01N60J) is available for low-footprint applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
± 30
V
A
ID @ TC=25°C
ID @ TC=100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
1.6
1
A
6
39
A
PD @ TC=25°C
Total Power Dissipation
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.31
W/°C
mJ
A
EAS
IAR
13
Avalanche Current
1.6
EAR
TSTG
TJ
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
0.5
mJ
°C
°C
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Value
3.2
Unit
Rthj-c
Max.
Max.
°C/W
°C/W
Rthj-a
110
Rev.2.02 4/06/2004
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SSM01N60H,J
Electrical Characteristics @ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
-
V
V/°C
Ω
∆BV /∆Τ
j
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
-
0.6
7.2
-
DSS
RDS(ON)
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=10V, ID=0.8A
8
VGS(th)
VDS=VGS, ID=250uA
VDS=10V, ID=0.8A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
4
-
V
gfs
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
j
Drain-Source Leakage Current (T=150oC)
j
-
100
IGSS
Qg
± 30V
±100
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VGS=
-
ID=1.6A
7.7
1.5
2.6
8
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=1.6A
5
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω ,VGS=10V
RD=187.5Ω
VGS=0V
14
7
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
286
25
6
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage3
VD=VG=0V , VS=1.5V
-
-
-
-
1.6
6
ISM
VSD
Tj=25°C, IS=1.6A, VGS=0V
-
-
1.5
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
Rev.2.02 4/06/2004
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SSM01N60H,J
1.5
T C =25 o C
T C =150 o C
V
V
G =10V
G =6.0V
V G =10V
V G =6.0V
0.8
0.6
0.4
0.2
0
V G =5.5V
V
G =5.5V
1
V G =5.0V
V
V
G =5.0V
G =4.5V
0.5
V
G =4.5V
0
0
5
10
15
20
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
1.1
1
I D =0.8A
V G =10V
2.4
2
1.6
1.2
0.8
0.4
0
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS
Temperature
vs. Junction
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Rev.2.02 4/06/2004
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SSM01N60H,J
2
1.6
1.2
0.8
0.4
0
50
40
30
20
10
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C )
Tc, Case Temperature ( o C )
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
10
DUTY=0.5
10us
1
0.2
0.1
100us
1ms
0.1
0.05
0.02
PDM
10ms
0.1
t
T
0.01
SINGLE PULSE
100ms
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
T c =25 o C
Single Pulse
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Rev.2.02 4/06/2004
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SSM01N60H,J
f=1.0MHz
1000
100
10
16
14
12
10
8
I D =1.6A
V DS =480V
Ciss
Coss
Crss
6
4
2
0
1
0
1
2
3
4
5
6
7
8
9
10
1
9
17
25
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
4
3
2
1
0
100
10
1
T j = 150 o C
T j = 25 o C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 4/06/2004
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SSM01N60H,J
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5x RATED VDS
RG
G
10%
VGS
+
-
10V
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
10V
0.8 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
ID
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 4/06/2004
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