QDFT-045-050 [ETC]
FIBER OPTIC RECEIVER ; 光纤接收器\n型号: | QDFT-045-050 |
厂家: | ETC |
描述: | FIBER OPTIC RECEIVER
|
文件: | 总4页 (文件大小:583K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
QDFT Series
High-Sensitivity Transimpedance
pinFET Receiver
I
Fixed transimpedance circuit configuration
I
I
I
Hybrid construction
Industry-standard 14-pin dual-in-line package
Multimode fiber
Description
The Corning Lasertron QDFT pinFET module is a high-sensitivity detector and hybrid
preamplifier module designed for fiber-optic receivers operating at data rates up to and
exceeding 420 Mb/s at 1300 and 1550 nm wavelengths. The transimpedance circuitry
providesexcellentsensitivityandsuperiordynamicrange. Thehighsensitivityresultsfrom
use of an advanced GaInAs detector element having <10 nA leakage and a responsivity of
>0.8 A/W at 1300 and 1550 nm.
Sensitivitiesrangefrom-53dBmat18Mb/s, to-43dBmat140Mb/s. Opticaldynamic
range exceeds 25 dB. Operation requires only +5 V power supplies at modest bias currents.
The QDFT is packaged in a hermetically sealed, low-profile, 14-pin DIL package and is
pigtailed with multimode fiber.
Applications
The Corning Lasertron QDFT pinFET module consists of a low-capacitance,
front-illuminated planar detector element followed by a hybrid transimpedance amplifier.
Benefits of the transimpedance design of the QDFT pinFET module include excellent
dynamic range and ease of implementation. The QDFT pinFET requires no equalization
and is self-biasing. Simply by applying +5 V and -5 V supplies to the amplifier circuit, and
a -5 V supply to the detector element, the device is ready to receive an optical input through
a multimode fiber-optic pigtail.
TRANSIMPEDANCE DESIGN CIRCUITRY
The diagram to the left illustrates the fundamental operation of a QDFT pinFET. As
incident light illuminates the detector, a small signal current is produced which is directly
proportional to the amplitude of the incident light source (Pi) and the responsivity (R) of
the detector.
This simple relationship of R • Pi yields the output signal current (Is). This current is
thenconvertedtoavoltagewiththetransimpedanceresistor(Zt)andagainblockamplifier.
The resulting signal voltage (Vs) is simply derived from the quantities Is • Zt.
Pin Connections
1
2
3
4
5
6
7
8
9
Detector Bias (-5 V)
NC
Case Ground
-5 V
Case Ground
NC
Output
(Bias and interface circuit)
Case Ground
NC
10 +5 V
11 NC
12 NC
13 NC
14 NC
Specifications and Ordering Information
QDFT Low-Bandwidth pinFET Receiver, page 39
QDFT Moderate-Bandwidth pinFET Receiver, page 40
QDFT High-Bandwidth pinFET Receiver, page 41
38
Corning Lasertron 2000 Product Guide
QDFT
Low-Bandwidth
pinFET Receiver
I
Telecom access and junction applications
Description
See page 38 for a general description.
Specifications Contact Corning Lasertron regarding special requirements.
005 010 015 020 025-001 025-004 040 045
QDFT -
Absolute Maximum Ratings
Fiber-coupled power (mW)
Reverse photocurrent (mA)
Reverse bias voltage (V)
5
5
-15
2
260
10
10
30
5
4
-53
-55
900
10
9
15
9
20
9
25
25
-46.5
-49
250
-22.4
25
25
-48.5
-50.5
360
40
25
-45
-48
120 120
45
25
-45
Min. pinFET bandwidth (MHz)
Min. noise filter bandwidth (MHz)
Sensitivity (dBm, Avg.): Max.
Typ.
Typ. transimpedance (K Ohm)
Max. input (dBm, Avg.) Min.
-50.5 -50.5 -49
-53
500
Forward current (mA)
-53 -51.5
500 250
-48
Lead soldering temperature (oC)
Lead soldering duration (sec)
Fiber yield strength (N, min)
Fiber bend radius (mm, min)
-27.9 -25.4 -25.4 -22.4
-25.5
-19.2 -19.2
Min
Typ
Max
Common Specifications (all models listed above)
Sensitivity change 25 to 65oC (dB)
1.5
Gain flatness 10 to 50% of nominal bandwidth (measured into a 1K Ohm load, dB)
Detector dark current (nA)
Output voltage at Pmax (V, p-p)
+1
10
1
2.3
7
0.85
0.1
90
Measured output impedance (Ohms)
Responsivity 1300 nm and -5 V bias (A/W)
Responsivity change (dB, 25 to 65oC)
Power consumption: +5 V supply (mW)
-5 V supply (mW)
0.75
0.5
40
Operating temperature range (oC)
-20
-40
70
85
Storage temperature range (oC)
Ordering Information
Suffix
Base Model
QDFT-005
QDFT-010
QDFT-015
QDFT-020
QDFT-025
QDFT-025
QDFT-040
QDFT-045
No Connector
-001
FC/PC
-050
-050
-050
-050
-050
-053
-050
-050
ST
-052
-052
-052
-052
-052
-055
-052
-052
-001
-001
-001
-001
-004
-001
-001
Product Information/Receivers and Detectors
39
QDFT
Moderate-Bandwidth
pinFET Receiver
I
Telecom trunk, access and junction applications
Description
See page 38 for a general description.
Specifications Contact Corning Lasertron regarding special requirements.
QDFT -
050 060 065 070 090 100
Absolute Maximum Ratings
Fiber-coupled power (mW)
Reverse photocurrent (mA)
Reverse bias voltage (V)
5
5
-15
50
34
-42.5
-46.8
72
60
50
65
50
70
50
-42
90 100
Min. pinFET bandwidth (MHz)
Min. noise filter bandwidth (MHz)
Sensitivity (dBm, Avg.): Max.
Typ.
Typ. transimpedance (K Ohms)
Max. input (dBm, Avg.) Min.
90
-41
-43
42
90
-41
-43
42
-42 -43.5
-45
72
Forward current (mA)
2
-46 -44.5
90 54
Lead soldering temperature (oC)
Lead soldering duration (sec)
Fiber yield strength (N, min)
Fiber bend radius (mm, min)
260
10
10
30
-17
-17
-19 -15.8 -14.6 -14.6
Min Typ Max
Common Specifications (all models listed above)
Sensitivity change 25 to 65oC (dB)
1.5
Gain flatness 10 to 50% of nominal bandwidth (measured into a 1K Ohm load, dB)
Detector dark current (nA)
Output voltage at Pmax (V)
+1
10
1
2.3
7
0.85
0.1
90
Measured output impedance (Ohms)
Responsivity 1300 nm and -5 V bias (A/W)
Responsivity change (dB, 25 to 65oC)
Power consumption: +5 V supply (mW)
-5 V supply (mW)
0.75
0.5
40
Operating temperature range (oC)
-20
-40
70
85
Storage temperature range (oC)
Ordering Information
Suffix
Base Model
QDFT-050
QDFT-060
QDFT-065
QDFT-070
QDFT-090
QDFT-100
No Connector
-001
FC/PC
-050
-050
-050
-050
-050
-050
ST
-052
-052
-052
-052
-052
-052
-001
-001
-001
-001
-001
40
Corning Lasertron 2000 Product Guide
QDFT
High-Bandwidth
pinFET Receiver
I
Telecom access and junction applications
Description
See page 38 for a general description.
Specifications Contact Corning Lasertron regarding special requirements.
QDFT -
125 170 200 250 275 300
Absolute Maximum Ratings
Fiber-coupled power (mW)
Reverse photocurrent (mA)
Reverse bias voltage (V)
5
5
-15
Min. pinFET bandwidth (MHz)
Min. noise filter bandwidth (MHz)
Sensitivity (dBm, Avg.): Max.
Typ.
Typ. transimpedance (K Ohms)
Max. input (dBm, Avg.)
125
100
170
150
200
150
250
200
275
200
300
200
-38.5 -36.5 -36.5 -34.5 -34.5 -34.5
-40.5 -38.5 -38.5 -36.5 -36.5 -36.5
Forward current (mA)
2
Lead soldering temperature (oC)
Lead soldering duration (sec)
Fiber yield strength (N, min)
Fiber bend radius (mm, min)
260
10
10
30
20
11
11
6.5
6.5
6.5
-11.5
-12
-12
-7.2
-7.2
-7.2
Min Typ Max
Common Specifications
Sensitivity change 25 to 65oC (dB)
1.5
Gain flatness 10 to 50% of nominal bandwidth (measured into a 1K Ohm load, dB)
Detector dark current (nA)
Output voltage at Pmax (V, p-p)
+1
10
1
2.3
7
0.85
0.1
135
80
Measured output impedance (Ohms)
Responsivity 1300 nm and -5 V bias (A/W)
Responsivity change (dB, 25 to 65oC)
Power consumption: +5 V supply (mW)
-5 V supply (mW)
0.75
0.5
Operating temperature range (oC)
-20
-40
70
85
Storage temperature range (oC)
Ordering Information
Suffix
Base Model
QDFT-125
QDFT-170
QDFT-200
QDFT-250
QDFT-275
QDFT-300
No Connector
-301
FC/PC
-350
-350
-350
-350
-350
-350
ST
-352
-352
-352
-352
-352
-352
-301
-301
-301
-301
-301
Product Information/Receivers and Detectors
41
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