PMBTA93 [ETC]

PNP high-voltage transistors ; PNP型高压晶体管\n
PMBTA93
型号: PMBTA93
厂家: ETC    ETC
描述:

PNP high-voltage transistors
PNP型高压晶体管\n

晶体 晶体管 光电二极管 高压
文件: 总8页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PMBTA92; PMBTA93  
PNP high-voltage transistors  
1997 Jul 03  
Product specification  
Supersedes data of September 1994  
File under Discrete Semiconductors, SC04  
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
FEATURES  
PINNING  
Low current (max. 100 mA)  
High voltage (max. 300 V).  
PIN  
1
DESCRIPTION  
base  
2
emitter  
APPLICATIONS  
3
collector  
Telephony  
Professional communication equipment.  
handbook, halfpage  
3
3
2
DESCRIPTION  
PNP high-voltage transistor in a SOT23 plastic package.  
NPN complements: PMBTA42 and PMBTA43.  
1
1
2
MARKING  
Top view  
MAM256  
TYPE NUMBER  
PMBTA92  
MARKING CODE  
p2D  
p2E  
Fig.1 Simplified outline (SOT23) and symbol.  
PMBTA93  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
PMBTA92  
open emitter  
300  
V
V
PMBTA93  
200  
VCEO  
collector-emitter voltage  
PMBTA92  
open base  
300  
200  
200  
250  
V
V
PMBTA93  
ICM  
Ptot  
hFE  
fT  
peak collector current  
total power dissipation  
DC current gain  
transition frequency  
mA  
T
amb 25 °C  
mW  
IC = 10 mA; VCE = 10 V  
40  
50  
IC = 10 mA; VCE = 20 V; f = 100 MHz  
MHz  
1997 Jul 03  
2
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
PMBTA92  
300  
V
V
PMBTA93  
200  
VCEO  
collector-emitter voltage  
PMBTA92  
open base  
300  
200  
5  
V
V
V
PMBTA93  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
100  
200  
100  
250  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient note 1  
500  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
1997 Jul 03  
3
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 200 V  
MIN. MAX. UNIT  
ICBO  
collector cut-off current  
PMBTA92  
250  
nA  
ICBO  
collector cut-off current  
PMBTA93  
IE = 0; VCB = 160 V  
250  
100  
nA  
nA  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
IC = 0; VEB = 3 V  
VCE = 10 V; note 1  
IC = 1 mA;  
25  
40  
25  
IC = 10 mA  
IC = 30 mA  
VCEsat  
VBEsat  
Cc  
collector-emitter saturation voltage  
base-emitter saturation voltage  
collector capacitance  
PMBTA92  
IC = 20 mA; IB = 2 mA  
IC = 20 mA; IB = 2 mA  
IE = ie = 0; VCB = 20 V; f = 1 MHz  
500  
900  
mV  
mV  
6
8
pF  
pF  
PMBTA93  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
1997 Jul 03  
4
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT23  
1997 Jul 03  
5
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Jul 03  
6
Philips Semiconductors  
Product specification  
PNP high-voltage transistors  
PMBTA92; PMBTA93  
NOTES  
1997 Jul 03  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
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Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
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Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
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Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
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Tel. +27 11 470 5911, Fax. +27 11 470 5494  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580920  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
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Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
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Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 481 7730  
Hungary: see Austria  
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.  
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Indonesia: see Singapore  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
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Tel. +66 2 745 4090, Fax. +66 2 398 0793  
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Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA54  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
117047/00/02/pp8  
Date of release: 1997 Jul 03  
Document order number: 9397 750 02319  

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