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PJC945CX [ETC]

NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
PJC945CX
型号： PJC945CX
厂家： ETC    ETC
描述：

NPN Epitaxial Silicon Transistor
NPN外延硅晶体管

晶体 晶体管 光电二极管 放大器
文件： 总2页 (文件大小：50K)
中文：  中文翻译
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PJC945  
NPN Epitaxial Silicon Transistor  
AUDIO FREQUENCY AMPLIFIER  
HIGH FREQUENCY OSC.  
TO-92  
SOT-23  
•
•
Complement to PJA733  
Excellent DC Current Gain Linearly 0.1mA to 50mA  
•
•
•
Low Output Capacitance Cob=2.5PF(Typ.) @VCB  
=6V,f=1MHz  
Low Noise Figure NF=2.5dB(TYP.) IC =0.1mA,VCE  
6V Rg= 2KΩ,f=1KHz  
=
DC Current Gain Selection Available  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Pin : 1. Emitter  
2. Colletor  
3. Base  
Pin : 1. Base  
2. Emitter  
3. Collector  
Rating  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
Ic  
60  
50  
V
V
5
V
120  
450  
1.2  
mA  
mW  
W
ORDERING INFORMATION  
Total Device Dissipation  
PD  
PD  
Device  
Operating Temperature  
-20℃～+85℃  
Package  
Junction Temperature  
Storage Temperature  
Tj  
150  
-55 ~150  
°C  
°C  
PJC945CT  
PJC945CX  
TO-92  
SOT-23  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test  
Condition  
Min  
Typ  
Max  
Unit  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
Collector-Cutoff Current  
Ic = 10µA, IE = 0  
80  
50  
5
V
V
V
µA  
µA  
µA  
Ic =1.0mA, IB =0  
_
IE = 10µA, IC = 0  
VCB= 45V,IE=0  
VEB=3V,IC=0  
VCE=40V,IB=0  
0.1  
0.1  
1
IEBO  
ICEO  
DC Current Gain  
hFE(1)  
hFE(2)  
VCE (SAT)  
VBE (SAT)  
VBE (on)  
VCE=6V,Ic=0.1 mA  
VCE=6V,Ic=1.0 mA  
IC=10mA,IB=1mA  
IC=10mA,IB=1mA  
IC=0.1mA,VCE=6V  
VCE=6V,IC=10mA  
VCB=6V,IE=0  
50  
70  
70  
0.3  
1
0.65  
450  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
0.09  
0.81  
0.6  
V
V
V
0.55  
150  
Current-Gain-Bandwidth Product  
f
T
250  
MHz  
Output Capacitance  
Noise Figure  
COb  
NF  
f=1MHZ  
VCE=6V,IE= 0.5mA  
f=1KHZ,Rs=2KΩ  
2.5  
2.5  
5
pF  
_
15  
dB  
hFE  
CLASSIFICATION  
(2)  
Classification  
R
P
Q
K
hFE(2)  
70-140  
120-240  
200-400  
350-700  
1-2  
2002/01.rev.A  
PJC945  
NPN Epitaxial Silicon Transistor  
2-2  
2002/01.rev.A  

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