PJ13005 [ETC]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | PJ13005 |
| 厂家： | 
ETC |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总2页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJ13005
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
TO-220
•
High Speed Switching
•
Suitable for Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
Characteristic
Collector Emitter
Symbol
VCEV
Rating
700
Unit
V
Voltage(VBE
Collector Emitter
Voltage(open base)
Emitter Base Voltage(open
collector)
VCEO
VEBO
400
9
V
V
Pin : 1. Base
2. Collector
3. Emitter
Collector Current (DC)
Collector Current (Pulse)
Base Current
Ic
Ic
IB
3
6
2
A
A
A
ORDERING INFORMATION
Collector Dissipation
Junction Temperature
Storage Temperature
Pc
Tj
Tstg
75
150
-65 ~150
W
℃
℃
Device
Operating Temperature Package
-20℃～+85℃ TO-220
PJ13005CZ
ELECTRICAL CHARACTERISTICS(Ta = 25℃)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
VCEO SUS
(
)
Ic = 10mA, IB = 0
VEB =9V, Ic=0
400
V
mA
IEBO
1
*DC Current Gain
hFE
VCE =5V, Ic =1A
VCE =5V, Ic =2A
10
8
60
40
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
VCE (sat) Ic =1A, IB =0.2A
Ic =2A, IB =0.5A
Ic =4A, IB =1A
VBE (sat) Ic =1A, IB =0.2A
Ic =2A, IB =0.5A
0.5
0.6
1.0
1.2
1.6
0.8
4
V
V
V
V
V
μS
μS
μS
Turn On Time
Storage Time
Fall Time
t on
ts
VCC =125V, Ic =2A
IB1 =-IB2 =0.4A
tf
0.9
ꢀ
Pulse Test: PW≤300 μS, Duty Cycle =1.5 %
1-2
2002/01.rev.A
PJ13005
NPN Epitaxial Silicon Transistor
2-2
2002/01.rev.A
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