OM75N06SW [ETC]
60V Single N-Channel Hi-Rel MOSFET in a D3 package ; 60V单N沟道高可靠性MOSFET在D3包装
| 型号： | OM75N06SW |
| 厂家： | 
ETC |
| 描述： | 60V Single N-Channel Hi-Rel MOSFET in a D3 package
|
| 文件： | 总8页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low RDS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
VDS (V)
100
100
100
60
RDS(on) ( )
.025
ID (A)
60
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
.030
55
.035
55
.016
75
3.1
60
.018
75
50
.016
75
50
.018
75
PIN CONNECTION
SCHEMATIC
TO-254AA
TO-258AA
Drain
Gate
1
2
3
1
2
3
Source
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
4 11 R1
Supersedes 2 07 R0
3.1 - 47
OM55N10SA - OM75N06SC
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
55N10SA 75N06SA 75N05SA
55N10SC 75N06SC 75N05SC
Parameter
60N10SC
Units
VDS
Drain-Source Voltage
100
100
60
100
100
55
60
60
50
50
V
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current2
Continuous Drain Current2
ID @ TC = 25°C
ID @ TC = 100°C
IDM
75
75
A
37
33
45
45
A
1
Pulsed Drain Current
180
130
55
180
125
50
225
125
50
225
125
50
A
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
Junction-To-Case Linear Derating Factor
W
1.00
1.00
1.00
1.00
W/°C
TJ
Operating and
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300 300 300 300
°C
°C
Tstg
Storage Temperature Range
Lead Temperature (1/16" from case for 10 secs.)
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C
THERMAL RESISTANCE
RthJC
Junction-to-Case
1.0
°C/W
PACKAGE LIMITATIONS
Parameters
TO254AA TO-258AA
Unit
A
ID
Continuous Drain Current
25
.020
50
35
.025
40
Linear Derating Factor, Junction-to-Ambient
W/°C
°C/W
RthJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
MECHANICAL OUTLINE
.545
.535
.050
.040
.270
.240
.144 DIA.
.695
.685
.165
.155
.045
.035
3.1
.800
.790
.685
.665
.835
.815
.550
.530
.707
.697
.550
.530
.092 MAX.
.005
.550
.510
.750
.500
.005
.065
.055
.045
.035
.150 TYP.
.200 TYP.
.260
.249
.140 TYP.
.150 TYP.
TO-258AA
TO-254AA
PACKAGE OPTIONS
6 PIN SIP
MOD PAK
Z-TAB
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
3.1 - 48
OM60N10SC (TC = 25°C unless otherwise specified)
OM55N10SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
IAR
Avalanche Current
60
A
(repetitive or
IAR
Avalanche Current
55
A
(repetitive or
non-repetitive,TJ = 25°C)
non-repetitive,TJ = 25°C)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
720 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
600 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
37
A
V
(repetitive or
non-repetitive, TJ = 100°C)
37
A
V
(repetitive or
non-repetitive, TJ = 100°C)
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
100
ID = 250 µA, VGS = 0
100
ID = 250 µA, VGS = 0
Breakdown Voltage
Breakdown Voltage
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
2
4
0.03
0.06
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
0.025
0.05
ID(on)
On State Drain Current
60
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
ID(on)
On State Drain Current
55
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
Electrical Characteristics - Dynamic
Electrical Characteristics - Dynamic
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 30 A
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 30 A
4000
1100
250
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
4000
1100
250
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
ies
ies
Coes
Cres
Coes
Cres
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Electrical Characteristics - Switching On
Td(on)
tr
Turn-On Time
Rise Time
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
Td(on)
tr
Turn-On Time
Rise Time
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
(di/dt)on Turn-On Current Slope
(di/dt)on Turn-On Current Slope
Qg
Total Gate Charge
120
nC VDD = 80 V, ID = 30 A, VGS = 10 V
Qg
Total Gate Charge
120
nC VDD = 80 V, ID = 30 A, VGS = 10 V
Electrical Characteristics - Switching Off
Electrical Characteristics - Switching Off
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
200
210
410
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
nS
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
200
210
410
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
nS
Electrical Characteristics - Source Drain Diode
Electrical Characteristics - Source Drain Diode
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
60
240
1.6
A
A
V
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
55
220
1.5
A
A
V
ISDM
VSD
trr
*
ISDM
VSD
trr
*
ISD = 60 A, VGS = 0
ISD = 55 A, VGS = 0
Reverse Recovery Time
180
nS ISD = 60 A, di/dt = 100 A/µs
Reverse Recovery Time
180
nS ISD = 55 A, di/dt = 100 A/µs
VR = 80 V
VR = 80 V
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
1.8
10
µC
A
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
1.8
11
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM55N10SA (TC = 25°C unless otherwise specified)
OM75N06SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
IAR
Avalanche Current
55
A
(repetitive or
IAR
Avalanche Current
70
A
(repetitive or
non-repetitive,TJ = 25°C)
non-repetitive,TJ = 25°C)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
600 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
37
A
V
(repetitive or
non-repetitive, TJ = 100°C)
40
A
V
(repetitive or
non-repetitive, TJ = 100°C)
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
100
ID = 250 µA, VGS = 0
60
ID = 250 µA, VGS = 0
Breakdown Voltage
Breakdown Voltage
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
Electrical Characteristics - ON
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
Electrical Characteristics - ON
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
0.035
0.070
0.016
0.032
ID(on)
On State Drain Current
55
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
ID(on)
On State Drain Current
75
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
Electrical Characteristics - Dynamic
Electrical Characteristics - Dynamic
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 30 A
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 40 A
4000
1100
250
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
4100
1800
420
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
ies
ies
Coes
Cres
Coes
Cres
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Electrical Characteristics - Switching On
Td(on)
tr
Turn-On Time
Rise Time
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
Td(on)
tr
Turn-On Time
Rise Time
190
900
150
nS VDD = 25 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
(di/dt)on Turn-On Current Slope
(di/dt)on Turn-On Current Slope
Qg
Total Gate Charge
120
nC VDD = 80 V, ID = 30 A, VGS = 10 V
Qg
Total Gate Charge
130
nC VDD = 25 V, ID = 40 A, VGS = 10 V
Electrical Characteristics - Switching Off
Electrical Characteristics - Switching Off
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
200
210
410
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
nS
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
360
280
600
nS VDD = 40 V, ID = 75 A
nS RG = 50 , VGS = 10 V
nS
Electrical Characteristics - Source Drain Diode
Electrical Characteristics - Source Drain Diode
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
55
180
1.5
A
A
V
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
75
300
1.5
A
A
V
ISDM
VSD
trr
*
ISDM
VSD
trr
*
ISD = 55 A, VGS = 0
ISD = 75 A, VGS = 0
Reverse Recovery Time
180
nS ISD = 55 A, di/dt = 100 A/µs
Reverse Recovery Time
120
nS ISD = 75 A, di/dt = 100 A/µs
VR = 80 V
VR = 25 V
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
1.8
11
µC
A
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N06SA (TC = 25°C unless otherwise specified)
OM75N05SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
IAR
Avalanche Current
70
A
(repetitive or
IAR
Avalanche Current
70
A
(repetitive or
non-repetitive,TJ = 25°C)
non-repetitive,TJ = 25°C)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
V
(repetitive or
non-repetitive, TJ = 100°C)
40
A
V
(repetitive or
non-repetitive, TJ = 100°C)
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
60
ID = 250 µA, VGS = 0
50
ID = 250 µA, VGS = 0
Breakdown Voltage
Breakdown Voltage
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
0.018
0.036
0.016
0.032
ID(on)
On State Drain Current
75
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
ID(on)
On State Drain Current
75
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
Electrical Characteristics - Dynamic
Electrical Characteristics - Dynamic
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 40 A
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 40 A
4100
1800
420
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
4100
1800
420
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
ies
ies
Coes
Cres
Coes
Cres
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Electrical Characteristics - Switching On
Td(on)
tr
Turn-On Time
Rise Time
190
900
150
nS VDD = 25 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
Td(on)
tr
Turn-On Time
Rise Time
190
900
150
nS VDD = 20 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
(di/dt)on Turn-On Current Slope
(di/dt)on Turn-On Current Slope
Qg
Total Gate Charge
130
nC VDD = 25 V, ID = 40 A, VGS = 10 V
Qg
Total Gate Charge
130
nC VDD = 20 V, ID = 40 A, VGS = 10 V
Electrical Characteristics - Switching Off
Electrical Characteristics - Switching Off
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
360
280
600
nS VDD = 40 V, ID = 75 A
nS RG = 50 , VGS = 10 V
nS
Tr(Voff)
tf
tcross
Off Voltage Rise Time
Fall Time
Cross-Over Time
360
280
600
nS VDD = 35 V, ID = 75 A
nS RG = 50 , VGS = 10 V
nS
Electrical Characteristics - Source Drain Diode
Electrical Characteristics - Source Drain Diode
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
75
300
1.5
A
A
V
ISD
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
75
300
1.5
A
A
V
ISDM
VSD
trr
*
ISDM
VSD
trr
*
ISD = 75 A, VGS = 0
ISD = 75 A, VGS = 0
Reverse Recovery Time
120
nS ISD = 75 A, di/dt = 100 A/µs
Reverse Recovery Time
120
nS ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
VR = 20 V
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
µC
A
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N05SA (TC = 25°C unless otherwise specified)
SWITCHING TIMES TEST CIRCUITS
FOR RESISTIVE LOAD
Avalanche Characteristics
Min. Typ. Max. Units Test Conditions
IAR
Avalanche Current
70
A
(repetitive or
non-repetitive,TJ = 25°C)
EAS
EAR
IAR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
V
(repetitive or
non-repetitive, TJ = 100°C)
RL
2200
µF
3.3
µF
VDD
Electrical Charactreristics - OFF
V(BR)DSS Drain-Source
VD
RS
50
ID = 250 µA, VGS = 0
VDS
Breakdown Voltage
D.U.T.
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-Body Leakage
Current (VDS = 0)
250 µA VDS = Max. Rat.
1000 µA VDS = Max. Rat. x 0.8, TC = 125°C
±100 nA VGS = ±20 V
FW
Electrical Charactreristics - ON
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On
Resistance
2
4
V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
0.018
0.036
ID(on)
On State Drain Current
75
25
A
S
VDS > ID(on) x RDS(on)max, VGS = 10 V
Electrical Charactreristics - Dynamic
gfs
C
Forward Transconductance
Input Capacitance
Output Capacitance
VDS > ID(on) x RDS(on)max, ID= 40 A
4100
1800
420
pF VDS = 25 V
pF VGS = 0
pF f = 1 mHz
ies
TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING
AND DIODE REVERSE RECOVERY TIME
Coes
Cres
Reverse Transfer Capacitance
Electrical Charactreristics - Switching On
Td(on)
tr
Turn-On Time
Rise Time
190
900
150
nS VDD = 20 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
A
A
A
B
(di/dt)on Turn-On Current Slope
D
S
L = 100µH
MOS
Diode
FAST
Diode
Qg
Total Gate Charge
130
nC VDD = 20 V, ID = 40 A, VGS = 10 V
G
Electrical Charactreristics - Switching Off
1000
µF
3.3
µF
–
Tr(Voff)
tf
Off Voltage Rise Time
Fall Time
360
280
600
nS VDD = 35 V, ID = 75 A
nS RG = 50 , VGS = 10 V
nS
B
B
VDS
D
25
tcross
Cross-Over Time
G
D.U.T.
Electrical Charactreristics - Source Drain Diode
ISD Source Drain Current
ISDM(*) Source Drain Current (pulsed)
75
300
1.5
A
A
+
–
S
RC
85
VSD
trr
Forward On Voltage
Reverse Recovery Time
V
ISD = 75 A, VGS = 0
120
nS ISD = 75 A, di/dt = 100 A/µs
VR = 20 V
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
Transconductance
Static Drain-Source On Resistance
RDS(on)
gfs(S)
50
TJ = 40°C
0.030
0.025
0.020
0.015
TJ = 25°C
40
30
20
10
0
VGS = 10V
TJ = 125°C
VDS > ID(on) x RDS(on)max
0.010
0
20
40
60
80
ID(A)
0
20
40
60
80
100
ID(A)
Gate Charge vs Gate-Source Voltage
Capacitance Variations
VGS (V)
C(nF)
10
8
5
4
3
2
1
0
Cies
6
VDS = 0
f = 1MHz
VDS = 80V
ID = 30A
4
2
Coes
Cres
0
0
20
40
60
80
100
Qg(nC)
0
20
40
60
80
100
VDS(V
3.1
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
VGS(th)
(norm)
RDS(on)
(norm)
VDS = VGS
ID = 250µA
1.5
1.2
1.0
0.8
0.6
1.0
0.5
VDS = 10V
ID = 30A
0
-50
0
50
100
TJ (°C)
-50
0
50
100
TJ (°C)
3.1 - 53
OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
Transconductance
Static Drain-Source On Resistance
gfs(S)
RDS(on)
VDS > ID(on) x RDS(on)max
80
60
40
14
TJ = -40°C
12
VGS = 10V
TJ = 25°C
TJ = 125°C
10
8
20
0
6
0
20
40
60
80
ID(A)
0
20
40
60
80
ID(A)
Gate Charge vs Gate-Source Voltage
Capacitance Variations
C(nF)
VGS(V)
VDS = 0
f = 1MHz
VDS = 25V
ID = 40A
8
6
4
12
8
4
Cies
Coes
Cres
2
0
0
0
10
20
30
40
VDS(V)
0
40
80
120
Qg(nC)
3.1
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
RDS(on)
(norm)
VGS(th)
(norm)
VDS = VGS
ID = 250µA
1.2
1.0
0.8
1.5
1.0
0.5
VGS = 10V
ID = 40A
0.6
0.4
0
-50
0
50
100
TJ (°C)
-50
0
50
100
TJ(°C)
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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