OM6057SB [ETC]
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE; 在密闭隔离电源模块封装的功率MOSFET
| 型号： | OM6057SB |
| 厂家： | 
ETC |
| 描述： | POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 107
OM6056SB OM6058SB OM6060SB
OM6057SB OM6059SB OM6061SB
Preliminary Data Sheet
POWER MOSFETS IN A HERMETIC ISOLATED
POWER BLOCK PACKAGE
High Current, High Voltage 100V Thru 1000V,
Up To 190 Amp N-Channel, Size 7 MOSFETs
FEATURES
• Size 7 Die, High Energy
• Rugged Package Design
• Solder Terminals
• Very Low RDS(on)
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
technology combined with a package designed specifically for high efficiency, high current
applications. They are ideally suited for Hi-Rel requirements where small size, high
performance and high reliability are required, and in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
This series also features avalanche high energy capability at elevated temperatures.
@ 25°C
MAXIMUM RATINGS
PART NUMBER
VDS
RDS(on)
ID (Continuous)
3.1
OM6056SB
OM6057SB
OM6058SB
OM6059SB
OM6060SB
OM6061SB
100 V
200 V
500 V
600 V
800 V
1000 V
.008 Ω
.018 Ω
.095 Ω
.140 Ω
.300 Ω
.500 Ω
190 A
105 A
58 A
48 A
34 A
18 A
PIN CONNECTION
AND SCHEMATIC
MECHANICAL OUTLINE
4 11 R0
3.1 - 107
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108
OM6056SB - OM6061SB
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
VDS
VDGR
ID
OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB
Unit
V
Drain Source Voltage
100
100
190
82
200
200
105
44
500
500
58
600
600
48
800
800
34
1000
1000
18
Drain Gate Voltage (RGS = 1.0 MΩ)
Continuous Drain Current @ TC = 25°C
V
2
A
2
Continuous Drain Current @ TC = 100°C
ID
25
19
15
7.5
A
1
Pulsed Drain Current
IDM
440
250
130
110
78
42
A
Max. Power Dissipation @ TC = 25°C
Max. Power Dissipation @ TC = 100°C
Linear Derating Factor Junction-to-Case
PD
570
245
W
PD
W
4.35
.033
W/°C
W/°C
° C
° C
Linear Derating Factor Junction-to-Ambient
Operating and Storage Temp. Range
TJ, Tstg
-55 to +150
230
Lead Temperature (1/16" from case for 10 sec.)
Notes: 1. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2. Package Pin Limitation: 100 Amps @ 125°C.
THERMAL RESISTANCE (MAXIMUM) @ TA = 25°C
Junction-to-Case
RthJC
.23
° C/W
° C/W
Junction-to-Ambient (Free Air Operation)
RthJA
30
PRELIMINARY ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Test Condition
VDS = VGS, ID = 250µA
VGS = ±20 VDC
Symbol
VGS(th)
IGSS
Part No.
All
Min.
Max.
4.0
Units
V
Gate Threshold Voltage
Gate-Source Leakage Current
Off State Drain-Source Leakage
2.0
All
±100
10
nA
VDS = VDSS x 0.8
VGS = 0V
TC = 25°C
TC = 125°C
IDSS
All
µA
IDSS
All
.10
mA
3.1
OM6056SB
OM6057SB
OM6058SB
OM6059SB
OM6060SB
OM6061SB
OM6056SB
OM6057SB
OM6058SB
OM6059SB
OM6060SB
OM6061SB
100
200
500
600
800
1000
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250 µA
VDSS
V
.008
.018
.095
.140
.300
.500
Static Drain-Source On-Resistance
VGS = 10V, ID = ID25 x 0.5
RDS(on)
Ω
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
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