OM6039SM [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | SMT ; 晶体管| MOSFET | N沟道| 200V V( BR ) DSS |我8A (D ) | SMT\n
OM6039SM
型号: OM6039SM
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | SMT
晶体管| MOSFET | N沟道| 200V V( BR ) DSS |我8A (D ) | SMT\n

晶体 晶体管
文件: 总1页 (文件大小:12K)
下载:  下载PDF数据表文档文件

OM6039SMT

Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6040SM

400V Single N-Channel Hi-Rel MOSFET in a SMD-3 package

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9 ETC

OM6040SM

Power Field-Effect Transistor, 5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6040SMT

Power Field-Effect Transistor, 5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6040SMTPBF

Power Field-Effect Transistor, 5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6041SM

500V Single N-Channel Hi-Rel MOSFET in a SMD-3 package

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12 ETC

OM6041SM

Power Field-Effect Transistor, 4A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6041SMPBF

Power Field-Effect Transistor, 4A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6041SMV

Power Field-Effect Transistor, 4A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

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0 IRF

OM6050SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

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16 IRF

OM6050SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

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8 IRF

OM6050SJ1

Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN

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0 IRF

OM6050SJPBF

Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, TO-267, 3 PIN

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0 IRF

OM6050SJTPBF

Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN

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0 IRF

OM6051SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)

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3 IRF