NSL35TT1_技术文档

NSL35TT1

High Current Surface

Mount PNP Silicon

Low V_CE(sat)Transistor

for Battery Operated

Applications

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35 VOLTS

1.0 AMPS

PNP TRANSISTOR

MAXIMUM RATINGS (T = 25°C)

A

Rating

Symbol

Max

–35

–50

–5.0

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V

CEO

V

CBO

V

EBO

COLLECTOR

3

1

Collector Current – Peak

I

C

–1.0

Adc

BASE

Collector Current – Continuous

–500

mAdc

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

2

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

A

P

D

(Note 1)

210

mW

3

Derate above 25°C

1.7

mW/°C

°C/W

2

1

Thermal Resistance,

Junction to Ambient

R

(Note 1)

595

θ

JA

CASE 463

SOT–416/SC–75

STYLE 1

Total Device Dissipation

P

(Note 2)

365

mW

D

T = 25°C

A

Derate above 25°C

2.9

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

R

(Note 2)

340

θ

JA

DEVICE MARKING

Thermal Resistance,

Junction to Lead #3

R

205

°C/W

°C

θ

JL

Junction and Storage

Temperature Range

T , T

J

–55 to

+150

stg

L1

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 X 1.0 inch Pad

L1 = Specific Device Code

ORDERING INFORMATION

Device

NSL35TT1

Package

Shipping

3000/Tape & Reel

SOT–416

Semiconductor Components Industries, LLC, 2002

1

Publication Order Number:

February, 2002 – Rev. 2

NSL35TT1/D

NSL35TT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typical

Max

Unit

Collector–Emitter Breakdown Voltage

V

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = –10 mAdc, I = 0)

–35

–50

–5.0

–

–45

–65

–

C

B

Collector–Base Breakdown Voltage

(I = –0.1 mAdc, I = 0)

V

C

E

Emitter–Base Breakdown Voltage

(I = –0.1 mAdc, I = 0)

Vdc

–7.0

–

E

C

Collector Cutoff Current

(V = –35 Vdc, I = 0)

I

mAdc

CBO

–0.03

–0.01

–0.1

CB

E

Collector–Emitter Cutoff Current

(V = –30 Vdc)

I

CES

–

CES

Emitter Cutoff Current

(V = –4.0 Vdc)

EB

I

EBO

–

ON CHARACTERISTICS

DC Current Gain (Note 3)

h

FE

(I = –100 mA, V = –1.0 V)

100

180

150

–

C

CE

(I = –100 mA, V = –2.0 V)

C

CE

(I = –250 mA, V = –2.0 V)

C

CE

Collector–Emitter Saturation Voltage (Note 3)

(I = –50 mA, I = –0.5 mA)

V

CE(sat)

–

–0.090

–0.200

–0.320

–0.170

–0.270

–0.130

–0.350

–0.450

–

C

B

(I = –100 mA, I = –1.0 mA)

C

B

(I = –250 mA, I = –2.5 mA)

C

B

(I = –250 mA, I = –5.0 mA)

C

B

(I = –500 mA, I = –50 mA)

–0.350

C

B

Base–Emitter Saturation Voltage (Note 3)

(I = –150 mA, I = –20 mA)

V

BE(sat)

–

–0.81

45

–0.9

C

B

Base–Emitter Turn–on Voltage (Note 3)

V

BE(on)

(I = –150 mA, V = –3.0 V)

–0.875

C

CE

Input Capacitance

(V = 0 V, f = 1.0 MHz)

EB

C

pF

ns

ibo

obo

on

–

Output Capacitance

(V = 0 V, f = 1.0 MHz)

CB

C

t

18

Turn–On Time

(I = –50 mA, I = –500 mA, R = 3.0 Ω)

40

BI

C

L

Turn–Off Time

t

off

(I = I = –50 mA, I = –500 mA, R = 3.0 Ω)

70

B1

B2

C

L

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

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2

NSL35TT1

1

0.1

1

I /I = 100

C

B

25°C

100

I /I = 200

C

B

T = –55°C

A

125°C

0.1

10

50

0.01

0.001

T = 25°C

A

0.01

0.001

0.01

0.1

1

0.001

0.01

0.1

1

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

500

400

300

200

1

I /I = 50

C

125°C

25°C

B

T = –55°C

A

0.1

25°C

T = –55°C

A

125°C

100

0

V

CE

= 5 V

0.01

0.001

0.01

0.1

1

0.01

0.1

I , COLLECTOR CURRENT (AMPS)

C

Figure 3. DC Current Gain

Figure 4. Collector Emitter Saturation Voltage

vs. Collector Current

1

1.2

1

T = 25°C

A

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

–55°C

25°C

I

C

= 1.0 A

0.8

0.6

0.4

T = 125°C

A

50 mA

5.0 mA

500 mA

250 mA

100 mA

0.2

0

0.1

0

10 mA

0.00001 0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

I , BASE CURRENT (AMPS)

B

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector Emitter Saturation Voltage

vs. Base Current

Figure 6. Base Emitter Saturation Voltage vs.

Collector Current

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3

NSL35TT1

1.2

50

f = 1 MHz

= 0 A

T = 25°C

A

V

CE

= 3.0 V

45

40

35

30

25

20

15

10

5

I

C

1

0.8

0.6

0.4

0.2

0

–55°C

25°C

T = 125°C

A

0

0.001

0.01

0.1

1

0

1

2

3

4

5

6

I , COLLECTOR CURRENT (AMPS)

C

V

EB

, EMITTER BASE VOLTAGE (V)

Figure 7. Base Emitter Turn–On Voltage vs.

Collector Current

Figure 8. Input Capacitance

20

18

16

14

12

10

8

f = 1 MHz

= 0 A

T = 25°C

A

I

E

6

4

2

0

5

10

15

20

25

30

35

40

V

CB

, COLLECTOR BASE VOLTAGE (V)

Figure 9. Output Capacitance

1

D = 0.50

D = 0.20

P

(pk)

D = 0.10

D = 0.05

0.1

t

1

t

2

D = 0.01

DUTY CYCLE, D = t /t

1

2

Copper Area = 0.048 square inches

= 505.7 °C/W

SINGLE PULSE

R

θ

JA

0.01

0.0001

0.001

0.01

0.1

t , TIME (s)

1

10

100

1000

1

Figure 10. Normalized Thermal Response

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4

NSL35TT1

INFORMATION FOR USING THE SOT–416 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.5 min. (3x)

TYPICAL

SOLDERING PATTERN

Unit: mm

1.4

SOT–416/SC–90 POWER DISSIPATION

The power dissipation of the SOT–416/SC–90 is a func-

tion of the pad size. This can vary from the minimum pad

size for soldering to the pad size given for maximum power

dissipation. Power dissipation for a surface mount device

the equation for an ambient temperature T of 25°C, one

can calculate the power dissipation of the device which in

this case is 125 milliwatts.

A

150°C – 25°C

833°C/W

is determined by T

perature of the die, Rθ , the thermal resistance from the

, the maximum rated junction tem-

J(max)

P_D=

= 150 milliwatts

JA

device junction to ambient; and the operating temperature,

The 833°C/W assumes the use of the recommended foot-

print on a glass epoxy printed circuit board to achieve a

power dissipation of 150 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad . Using a board material such

as Thermal Clad, a higher power dissipation can be

achieved using the same footprint.

T . Using the values provided on the data sheet, P can be

A

D

calculated as follows.

T_J(max)– T_A

R_θ

P_D=

JA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• The soldering temperature and time should not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied dur-

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

ing cooling

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

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5

NSL35TT1

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session to the next. Figure 11 shows a typical heating

profile for use when soldering a surface mount device to a

printed circuit board. This profile will vary among

soldering systems but it is a good starting point. Factors that

can affect the profile include the type of soldering system

in use, density and types of components on the board, type

of solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6 STEP 7

VENT COOLING

STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

STEP 3

HEATING

STEP 4

HEATING

ZONES 3 & 6

SOAK"

SOAK" ZONES 2 & 5

RAMP"

205° TO 219°C

PEAK AT

SOLDER JOINT

200°C

150°C

170°C

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

160°C

150°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

140°C

100°C

MASS OF ASSEMBLY)

100°C

50°C

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

TIME (3 TO 7 MINUTES TOTAL)

T

MAX

Figure 11. Typical Solder Heating Profile

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6

NSL35TT1

PACKAGE DIMENSIONS

SC–75/SOT–416

CASE 463–01

ISSUE B

–A–

S

NOTES:

2

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3

G

–B–

MILLIMETERS

INCHES

1

DIM MIN

MAX

0.80

1.80

0.90

0.30

MIN

MAX

0.031

0.071

0.035

0.012

D 3 PL

0.20 (0.008)

A

B

C

D

G

H

J

0.70

1.40

0.60

0.15

0.028

0.055

0.024

0.006

M

B

0.20 (0.008) A

K

1.00 BSC

0.039 BSC

---

0.10

1.45

0.10

0.25

1.75

0.20

---

0.004

0.057

0.004

0.010

0.069

0.008

K

L

J

C

S

0.50 BSC

0.020 BSC

STYLE 1:

L

PIN 1. BASE

2. EMITTER

3. COLLECTOR

H

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7

NSL35TT1

Thermal Clad is a trademark of the Bergquist Company.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

NSL35TT1/D

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8


型号：	NSL35TT1
厂家：	ETC
描述：	TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 1A I(C) \| SOT-416 晶体管\| BJT \| PNP \| 35V V（ BR ） CEO \| 1A I（C ） \| SOT- 416\n 晶体晶体管开关光电二极管
文件：	总8页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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