NGB18N40CLBT4/D [ETC]

Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) ; 点火IGBT在D2ak (第3代)与改进SCIS能源的VCE(on )\n
NGB18N40CLBT4/D
元器件型号: NGB18N40CLBT4/D
生产厂家: ETC    ETC
描述和应用:

Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
点火IGBT在D2ak (第3代)与改进SCIS能源的VCE(on )\n

双极性晶体管
PDF文件: 总8页 (文件大小:75K)
下载文档:  下载PDF数据表文档文件
型号参数:NGB18N40CLBT4/D参数

NGB18N40CLBT4_06

Ignition IGBT 18 Amps, 400 Volts

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31 ONSEMI

NGB18N40CLBT4G

Ignition IGBT 18 Amps, 400 Volts

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32 ONSEMI

NGB8202AN

Ignition IGBT 20 A, 400 V, N.Channel D2PAK

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0 ONSEMI

NGB8202ANT4G

暂无描述

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0 LITTELFUSE

NGB8202ANTF4G

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

NGB8202N

Ignition IGBT

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35 ONSEMI

NGB8202N

20 A, 400 V, N−Channel D2PAK

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24 ONSEMI

NGB8202N_06

Ignition IGBT

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15 ONSEMI

NGB8202N_11

Ignition IGBT 20 A, 400 V, N.Channel D2PAK

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0 ONSEMI

NGB8202NT4

Ignition IGBT

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23 ONSEMI

NGB8202NT4

20 A, 400 V, N−Channel D2PAK

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26 ONSEMI

NGB8202NT4G

Ignition IGBT

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23 ONSEMI

NGB8202NT4G

Ignition IGBT 20 A, 400 V, N.Channel D2PAK

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14 ONSEMI

NGB8204AN

Ignition IGBT 18 Amps, 400 Volts

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26 ONSEMI

NGB8204ANT4G

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE