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MU93-5001 [ETC]

SUPER BRIGHT LED LIGHT BAR MODULE; 超高亮LED灯条模块
MU93-5001
型号： MU93-5001
厂家： ETC    ETC
描述：

SUPER BRIGHT LED LIGHT BAR MODULE
超高亮LED灯条模块

光电
文件： 总8页 (文件大小：285K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MUBW 30-12 A6  
Converter - Brake - Inverter Module (CBI1)  
Rectifier  
Brake  
Inverter  
VRRM = 1600V  
IFAVM = 25 A  
IFSM = 370 A  
VCES = 1200 V VCES = 1200 V  
IC25 = 18 A  
VCE(sat) = 2.6 V  
IC25 = 31 A  
VCE(sat) = 2.2 V  
Features  
Input Rectifier Bridge D8 - D13  
●
NPT IGBT technology  
Symbol  
VRRM  
IF  
Conditions  
Maximum Ratings  
Square RBSOA, no latchup  
Free wheeling diodes with Hiperfast  
and soft recovery behaviour  
Isolation voltage 2500 V~  
Built in temperature sense  
High level of integration:  
one module for complete drive  
system  
●
1600  
55  
V
A
A
●
●
●
TVJ = 25°C  
IFAVM  
TVJ = 150°C; TK = 70°C  
25  
IFSM  
i²t  
TVJ = 45°C; t = 10 ms sine 50 Hz  
TVJ = 125°C  
370  
680  
A
A²s  
●
Direct Copper Bonded Al2O3 ceramic  
base plate  
TVJ  
+150  
°C  
Applications  
●
AC motor control  
Symbol  
IR  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
AC servo and robot drives  
Advantages  
VRRM = 1200 V; TVJ = 25°C  
TVJ = 125°C  
20 µA  
2
mA  
●
No need of external isolation  
Easy to mount with two screws  
Package designed for wave  
soldering  
●
VF  
IF = 55 A  
per die  
1.2 1.46  
V
●
RthJC  
1.05  
°C/W  
●
High temperature and power cycling  
capability  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 8  
MUBW 30-12 A6  
Output Inverter T1 - T6, D1 - D6  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TVJ = 25°C  
1200  
1200  
V
V
TVJ = 25°C; RGE = 20kW  
±
VGE  
IC  
TVJ = 25°C  
20  
V
TC = 25°C  
TC = 90°C  
31  
17  
A
A
ICM  
tSC  
Ptot  
tp = 1 ms = 1% duty cycle; TC = 25°C  
TC = 90°C  
62  
34  
A
A
VCE = 600 V; TVJ = 125°C  
non-repetitive  
10  
µs  
W
TC = 25°C  
104  
TVJ  
TVJ  
Free-Wheeling Diode  
IGBT  
+150  
+150  
°C  
°C  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
600 1000 µA  
100 nA  
ICES  
VGE = 0 V; VCE = 1200 V  
VCE = 0 V; VGE = 25 V  
IGES  
VGE(th)  
V(BR)CES  
VCEsat  
VGE = VCE; IC = 0.35 mA  
4.5  
6.5  
V
V
VGE = 0 V; IC = 10 mA; TVJ = -55°C  
1200  
VGE = 15 V; IC = 15 A; TVJ = 25°C  
TVJ = 150°C  
2.2  
2.5  
2.6  
3.0  
V
V
tf  
tr  
150  
70  
ns  
ns  
Inductive load, TVJ = 125°C  
VCC = 600 V; IC = 17.5 A  
td(on)  
td(off)  
80  
580  
ns  
ns  
±
RG = 100 W; VGE = 15 V  
Eoff  
Eon  
1.2  
3.0  
mJ  
mJ  
Ciss  
Coss  
Crss  
1000  
200  
80  
pF  
pF  
pF  
VGE = 0 V  
VCE = 25 V  
f = 1 MHz  
gfs  
Qg  
VF  
VCE = 20 V; IC = 1.5 A  
tbd  
S
VCC = 800 V; IC = 6 A pulse; VGE = 15 V  
108  
nC  
IF = 12 A; VGE = 0 V; TVJ = 25°C  
TVJ = 100°C  
2.2 2.75  
1.8  
V
V
trr  
IF = 12 A; VGE = 0 V; TVJ = 100°C  
VR = -500 V; diF/dt = -1000 A/µs  
80  
ns  
Qr  
IF = 12 A; VGE = 0 V; TVJ = 100°C  
VR = -500 VdiF/dt = -1000 A/µs  
2.2  
µC  
Ir  
250 µA  
RthJC  
IGBT  
Diode  
(per die)  
(per die)  
1.0  
1.5  
°C/W  
°C/W  
© 2000 IXYS All rights reserved  
2 - 8  
MUBW 30-12 A6  
Brake Chopper T7, D7  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TVJ = 25°C  
1200  
1200  
V
V
TVJ = 25°C; RGE = 20kW  
±
VGE  
IC  
TVJ = 25°C  
20  
18  
V
TC = 25°C  
TC = 90°C  
A
A
11.5  
ICM  
tSC  
Ptot  
tp = 1 ms = 1% duty cycle; TC = 25°C  
TC = 90°C  
36  
23  
A
A
VCE = 600 V; TVJ = 125°C  
non-repetitive  
10  
70  
µs  
W
TC = 25°C  
TVJ  
TVJ  
Free-Wheeling Diode  
IGBT  
+150  
+150  
°C  
°C  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
500 µA  
100 nA  
ICES  
VGE = 0 V; VCE = 1000 V  
VCE = 0 V; VGE = 25 V  
IGES  
VGE(th)  
V(BR)CES  
VCEsat  
VGE = VCE; IC = 0.35 mA  
4.5  
5.5  
6.5  
V
V
VGE = 0 V; IC = 10 mA; TVJ = -40°C  
1200  
VGE = 15 V; IC = 10 A; TVJ = 25°C  
TVJ = 150°C  
2.9  
3.4  
V
V
tf  
tr  
350  
40  
ns  
ns  
Inductive load, TVJ = 125°C  
VCC = 600 V; IC = 8 A  
td(on)  
td(off)  
80  
420  
ns  
ns  
±
RG = 100 W; VGE = 15 V  
Eoff  
Eon  
0.9  
1.3  
mJ  
mJ  
Ciss  
Coss  
Crss  
850  
98  
60  
nF  
nF  
nF  
VGE = 0 V  
VCE = 25 V  
f = 1 MHz  
gfs  
Qg  
VF  
VCE = 20 V; IC = 1.5 A  
1.7  
S
VCC = 1000 V; IC = 8 A pulse; VGE = 15 V  
58  
nC  
IF = 4 A; VGE = 0 V; TVJ = 25°C  
TVJ = 100°C  
2.3  
2
3
V
V
trr  
IF = 4 A; VGE = 0 V; TVJ = 100°C  
VR = -300 V; diF/dt = -800 A/µs  
55  
ns  
Qr  
IF = 4 A; VGE = 0 V; TVJ = 100°C  
VR = -300 V; diF/dt = -800 A/µs  
0.8  
µC  
Ir  
250 µA  
RthJC  
IGBT  
Diode  
(per die)  
(per die)  
1.5  
2.25  
°C/W  
°C/W  
© 2000 IXYS All rights reserved  
3 - 8  
MUBW 30-12 A6  
Module  
Symbol  
Tstg  
Conditions  
Maximum Ratings  
-40...+125  
2500  
°C  
VISOL  
Md  
IISOL £ 1 mA; 50/60 Hz; t = 1 min  
V~  
Mounting torque (M4)  
2.0 - 2.2  
18 - 20  
Nm  
lb.in.  
dS  
dA  
Creepage distance on surface  
Strike distance in air  
12.7  
12.7  
mm  
mm  
Weight  
typ.  
42  
g
Temperature Sensor R  
Symbol  
Conditions  
Maximum Ratings  
4.7 kW  
R
Tamb = 20°C  
For additional data see C620/4.7k 5% S+M NTC thermistor catalog  
Dimensions in mm (1 mm = 0.0394")  
57.3-0.3  
© 2000 IXYS All rights reserved  
4 - 8  
MUBW 30-12 A6  
Input Rectifier Bridge D8 - D13  
Forward characteristics  
Surge overload current  
I2t versus time (1-10 ms)  
IFSM: crest value, t: duration  
10  
1
(ZthJH is measured using 50 µm  
thermal grease)  
0.1  
D = 0  
ZthJH[K/W]  
D = 0.005  
0.01  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
0.001  
0.0001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t (s)  
Transient thermal resistance junction to heatsink  
© 2000 IXYS All rights reserved  
5 - 8  
MUBW 30-12 A6  
Output Inverter T1 - T6  
Reverse biased safe operating area  
2.5  
2.0  
ICpuls / IC  
1.5  
1.0  
0.5  
0.0  
T
VJ = 150 C  
V
GE = 15 V  
0
400  
800  
VCE  
1200  
V
Short circuit safe operating area  
10  
8
di/dt =  
ICsc / IC  
200 A/µs  
600 A/µs  
1000A/µs  
6
4
2
0
T
VJ = 150 C  
VGE = ±15 V  
Tsc 10 µs  
L
< 50 nH  
0
400  
800  
VCE  
1200  
V
Typ. gate charge  
Typ. capacitances  
© 2000 IXYS All rights reserved  
6 - 8  
MUBW 30-12 A6  
Output Inverter T1 - T6  
RG = 150 W  
CE = 600 V  
TVJ = 125°C  
IC = 15 A  
V
VCE = 600 V  
TVJ = 125°C  
7\SꢀꢁVZLFKLQJꢁORVVHV  
7\SꢀꢁVZLWFKLQJꢁORVVHV  
IC = 15 A  
VCE = 600 V  
RG = 150 W  
VCE = 600 V  
Transient thermal resistance junction to heatsink  
(ZthJH is measured using 50 µm  
thermal grease)  
,*%7ꢀ  
>.ꢁ:@  
=
WꢂVꢃ  
© 2000 IXYS All rights reserved  
7 - 8  
MUBW 30-12 A6  
Output Inverter D1 - D6  
70  
A
5
60  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
C
60  
50  
4
3
2
1
0
Qr  
IRM  
IF 50  
40  
30  
20  
10  
0
TVJ=150°C  
IF= 60A  
IF= 30A  
IF= 15A  
TVJ=100°C  
TVJ= 25°C  
40  
30  
20  
10  
0
IF= 60A  
IF= 30A  
IF= 15A  
A/ s  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Forward current IF versus VF  
Reverse recovery charge Qr  
versus -diF/dt  
Peak reverse current IRM  
versus -diF/dt  
2.0  
1.5  
1.0  
0.5  
0.0  
220  
120  
V
1.2  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
IF = 30A  
ns  
s
200  
VFR  
tfr  
tfr  
trr  
Kf  
80  
40  
0
0.8  
VFR  
180  
160  
140  
120  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
0.4  
Qr  
23-12  
0.
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Dynamic parameters Qr, IRM  
versus TVJ  
Recovery time trr versus -diF/dt  
Peak forward voltage VFR and tfr  
versus diF/dt  
(ZthJH is measured using 50 µm  
thermal grease)  
)5('ꢀ  
=
>.ꢁ:@  
WꢂVꢃ  
Transient thermal resistance junction to heatsink  
© 2000 IXYS All rights reserved  
8 - 8  

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