ME2808 [ETC]
Voltage Detectors; 电压检测器
ETC 
ME2808
Voltage Detectors , ME2808 Series
General Description
Features
Highly accuracy： ±1%
ME2808 Series are a set of three-terminal low
power voltage detectors implemented in NMOS
technology. Each voltage detector in the series
detects a particular fixed voltage ranging from 2.0V
to 7.0V. The voltage detectors consist of a high
precision and low power consumption standard
voltage source, a comparator, hysteresis circuit, and
an output driver. NMOS technology ensures low
power consumption.
Low power consumption：TYP 1.8uA (Vin=3V)
Detect voltage range ： 2.0V~7.0V in 0.1V
increments
Operating voltage range：1.5V~18V
Detect voltage temperature characteristics：
TYP±0.9mV/℃
Output configuration： NMOS
Package：SOT-23-3，SOT-23-5，SOT-89-3，TO-92
Selection Guide
Typical Application
battery checkers
Level selectors
Power failure detectors
Microcomputer reset
Battery backup of Memories
Typical Application Circuit
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ME2808
Pin Configuration
Pin Assignment
Pin Number
Pin Name
Functions
SOT-23-3
SOT-23-5
SOT-89-3
TO-92
3
1
2
GND
VOUT
VIN
Ground
2
1
3
3
1
2
4
5
3
1
2
Output Voltage
Input Voltage
No Connection
No Connection
NC
NC
Block Diagram
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ME2808
Absolute Maximum Ratings
PARAMETER
VIN Input Voltage
Output Current
SYMBAL
VIN
RATINGS
UNITS
18
50
V
mA
V
IOUT
Output Voltage
NMOS
SOT23-3/5
SOT89-3
TO-92
VOUT
GND-0.3~ VIN +0.3
300
Continuous Total Power
Dissipation
PD
500
mW
500
Operating Ambient Temperature
TOpr
Tstg
0~+70
℃
℃
Storage Temperature
-50~+125
260℃, 10s
Soldering temperature and time
Tsolder
Electrical Characteristics (VDET =2.0V to 7.0V ,TA=25℃ ,unless otherwise noted)
Parameter
VDET
Symbol
Conditions
Min.
Typ.
Max.
Units
Detect
Voltage
Hysteresis
Width
VDET×0.99
VDET
VDET×1.01
V
V
VHYS
VDET×0.02 VDET×0.05 VDET×0.1
VDET=2.0V~ 2.8V
VIN =3.0V
-
-
-
-
1.8
1.8
2.1
2.5
3
4
4
4
VDET =2.8V~ 3.6V VIN =4.0V
VDET =3.6V ~ 4.7V VIN =5.0V
VDET =4.7V~ 7.0V VIN =8.0V
Operating
Current
IIN
μA
Operating
Voltage
VIN
VDET =2.0V to 7.0V
0.7
0.5
0.5
1.2
2.5
-
18
V
VIN =-VDET(S) -0.2
VDET=2.0V~ 2.8V
VDET =2.8V~ 3.6V
VDET =3.6V ~ 4.7V
VDET =4.7V~ 7.0V
0℃≤Topr≤70℃
V , VOUT=0.2V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
mA
Output Sink
Current
IOL
Temperature
∆VDET/∆TA
±0.9
mV/℃
characteristics
Note: 1、VDF(S) ：Specified Detection Voltage value
2、VDF ：Actual Detection Voltage value
3、Release Voltage：VDR=VDF+VHYS (ME2808A series)
VDR=VDF-VHYS (ME2808B series)
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ME2808
Functional Description
The ME2808 series is a set of voltage detectors equipped with a high stability voltage reference which is
connected to the negative input of a comparator — denoted as VREF in the following figure (Fig. 1).When the voltage
drop to the positive input of the comparator (i,e,VB) is higher than VREF, VOUT goes high, M1 turns off, and VB is
ex-pressed as VBH=VIN×(RB+RC)/(RA+RB+RC).If VIN is decreased so that VB falls to a value that is less than VREF, the
comparator output inverts (from high to low), VOUT goes low, VC is high, M1 turns on, RC is bypassed, and VB
becomes: VBL=VIN×RB/(RA+RB), which is less than VBH. By so doing the comparator out-put will stay low to prevent
the circuit from oscillating when VB ≈ VREF. If VIN falls bellow the minimum operating voltage, the output becomes
undefined. When VIN goes from low to VIN×RB/(RA+RB) >VREF, the comparator output goes high and VOUT goes high
again. The detection voltage is as defined:
VDET(–)=( RA+RB+RC)×VREF/( RB+RC)
The release voltage is as defined:
VDET(+)=(RA+RB)×VREF / RB
The hysteresis width is:
VHYS=VDET(+)–VDET(–)
Fig.1 demonstrates the NMOS output type with positive output polarity (VOUT is normally high, active low).
Fig.1 NMOS output voltage detector (ME2808)
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ME2808
Timing Chart
ME2808AXX:
ME2808BXX:
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ME2808
Package Information
● SOT89-3
● SOT23-3
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ME2808
● SOT23-5
● TO-92
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ME2808
The information described herein is subject to change without notice.
Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams
described herein whose related industrial properties, patents, or other rights belong to third parties.
The application circuit examples explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any
apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro
One Electronics Inc.
Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality
and reliability, the failure or malfunction of semiconductor products may occur. The user of these
products should therefore give thorough consideration to safety design, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community
damage that may ensue.
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