M5M29GB640C3TXAI-12_技术文档

M5M29GB640VP

FEATURES

67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT)

3.3VONLYFLASHMEMORY

FEATURES

• Automatic Suspend Enhance

- Word/byte write suspend to read

- Sector erase suspend to word/byte write

- Sector erase suspend to read register report

• Automaticsectorerase,fullchiperase,wordwriteand

sector lock/unlock configuration

• Status Reply

• Singlepowersupplyoperation

- 3.0V only operation for read, erase and program

operation

- VCC=VPP=2.7~3.6V

-VCC=12fastproductionprogramming

- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)

-Operatingtemperature:-40°C~85°C

• Fast access time : 90/120ns

• Lowpowerconsumption

- Detection of program and erase operation comple-

tion.

- Command User Interface (CUI)

- Status Register (SR)

-9mAmaximumactivereadcurrent, f=5MHz(CMOS

input)

• Data Protection Performance

-Includebootsectorsandparameterandmainsectors

to be block/unblock

- 21mA program erase current maximum

(VPP=1.65~3.6V)

- 7uA typical standby current under power saving

mode

• 100,000minimumerase/programcycles

• Common Flash Interface (CFI)

• Sectorarchitecture

•

64-bitProtectionRegister

- Sector Erase (Sector structure : 4Kword x 2 (boot

sectors), 4Kword x 6 (parameter sectors), 32Kword x

7(parametersectors)

Latch-up protected to 100mA from -1V to VCC+1V

- Top Boot

• Package type:

• Auto Erase (chip & sector) and Auto Program

- Automatically program and verify data at specified

address

- 48-pin TSOP (12mm x 20mm)

A15

A14

A13

A12

A11

A10

A9

1

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

VCCQ

GND

Q15

Q7

2

3

4

5

6

Q14

Q6

7

A8

8

Q13

Q5

A21

A20

WE

RP

NC

WP

A19

A18

A17

A7

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

Q12

Q4

M5M29GB640VP

VCC

Q11

Q3

Q10

Q2

Q9

Q1

A6

Q8

A5

Q0

A4

OE

A3

GND

CE

1

A2

A1

A0

1

M5M29GB640VP

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The M5M29GB640VP uses a 2.7V~3.6VVCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

tially reduces active current when the device is in static

mode (addresses not switching). In this mode, the typi-

cal ICCS current is 7uA (CMOS) at 3.0V VCC.

As CE and RP are atVCC, ICC CMOS standby mode is

enabled.When RP is at GND, the reset mode is enabled

which minimize power consumption and provide data

write protection.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

A reset time (tPHQV) is required from RP switching high

until outputs are valid. Similarly, the device has a wake

time (tPHEL) from RP-high until writes to the CUI are

recognized.With RP at GND, the WSM is reset and the

status register is cleared.

A Command User Interface (CUI) serves as the inter-

face between the system processor and internal opera-

tion of the device. A valid command sequence written to

the CUI initiates device automation. An internal Write

State Machine (WSM) automatically executes the algo-

rithms and timings necessary for erase, full chip erase,

word/byte write and sector lock/unlock configuration op-

erations.

A sector erase operation erases one of the device's 32K-

word sectors typically within 1.0s, 4K-word sectors typi-

cally within 0.5s independent of other sectors. Each sec-

tor can be independently erased minimum 100,000 times.

Sector erase suspend mode allows system software to

suspend sector erase to read or write data from any other

sector.

Writing memory data is performed in word increments of

the device's 32K-word sectors typically within 0.8s and

4K-word sectors typically within 0.1s.Word program sus-

pend mode enables the system to read data or execute

code from any other memory array location.

M5M29GB640VP features with individual sectors lock-

ing by using a combination of bits thirty-nine sector lock-

bits and WP, to lock and unlock sectors.

The status register indicates when the WSM's sector

erase, full chip erase, word program or lock configura-

tion operation is done.

The access time is 90/120ns (tELQV) over the operat-

ing temperature range (-40°C to +80°C) andVCC supply

voltage range of 2.7V~3.6V.

M5M29GB640VP's power saving mode feature substan-

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M5M29GB640VP

BLOCK DIAGRAM

DQ0~DQ7

Output

Buffer

Input

Buffer

I/O

VCC

Logic

Identifier

Register

CS

WE

Command

User

Interface

OE

RP

WP

Status

Register

Data

Comparator

Write

State

Machine

Y

VPP

Program/Erase

Voltage Switch

Input

Buffer

Y-Gating

A0~A21

Decoder

VCC

GND

32K-Word

Main Sector

x96

Address

Latch

X

Decoder

Address

Counter

.......

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M5M29GB640VP

Table 1. Pin Description

Symbol

Type

Description and Function

A0-A21

input

Address inputs for memory address. Data pin float to high-impedance when the chip is

deselected or outputs are disable. Addresses are internally latched during a write or

erase cycle.

DQ0-DQ15 input/output Data inputs/outputs: Inputs array data on the second CE and WE cycle during a pro-

gram command. Data is internally latched. Outputs array and configuration data. The

data pin float to tri-state when the chip is de-selected.

CE

input

Activates the device's control logic, input buffers, and sense amplifiers. CE high de-

selects the memory device and reduce power consumption to standby level. CE is

active low.

RP

input

Reset Deep Power Down:when RP=VIL, the device is in reset/deep power down mode,

which drives the outputs to High Z, resets the WSM and minimizes current level.

When RP=VIH, the device is normal operation.When RP transition the device defaults

to the read array mode.

WE

input

Write Enable: to control write to CUI and array sector. WR=VIL becomes active. The

data and address is latched WE on the rising edge of the second WE pulse.

OE

input

Output enable: gates the device's outputs during a real cycle.

Write protect:whenWP isVIL, the boot sectors cannot be written or erased.WhenWP

is VIH, locked boot sectors cannot be written or erase. WP is not affected parameter

and main sectors.

WP

VCC

supply

input

Device power supply: (2.7V~3.6V).

VCCQ

GND

I/O Power Supply: supplies for input/output buffers. (Refer to section 6.2.6)

Ground voltage: all the GND pin shall not be connected.

supply

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M5M29GB640VP

SECTOR STRUCTURE (TOP)

Sector

Sector Size

4KWord

Address Range (h)

3FF000-3FFFFF

3FE000-3FEFFF

3FD000-3FDFFF

3FC000-3FCFFF

3FB000-3FBFFF

3FA000-3FAFFF

3F9000-3F9FFF

3F8000-3F8FFF

3F0000-3F7FFF

3E8000-3EFFFF

3E0000-3E7FFF

3D8000-3DFFFF

3D0000-3D7FFF

3C8000-3CFFFF

3C0000-3C7FFF

3B8000-3BFFFF

3B0000-3B7FFF

3A8000-3AFFFF

3A0000-3A7FFF

398000-39FFFF

390000-397FFF

388000-38FFFF

380000-387FFF

378000-37FFFF

370000-377FFF

368000-36FFFF

360000-367FFF

358000-35FFFF

350000-357FFF

348000-34FFFF

340000-347FFF

338000-33FFFF

330000-337FFF

328000-32FFFF

320000-327FFF

318000-31FFFF

310000-317FFF

308000-30FFFF

300000-307FFF

Boot Sector 0

Boot Sector 1

4KWord

Parameter Sector 0

Parameter Sector 1

Parameter Sector 2

Parameter Sector 3

Parameter Sector 4

Parameter Sector 5

Main Sector 0

Main Sector 1

Main Sector 2

Main Sector 3

Main Sector 4

Main Sector 5

Main Sector 6

Main Sector 7

Main Sector 8

Main Sector 9

Main Sector 10

Main Sector 11

Main Sector 12

Main Sector 13

Main Sector 14

Main Sector 15

Main Sector 16

Main Sector 17

Main Sector 18

Main Sector 19

Main Sector 20

Main Sector 21

Main Sector 22

Main Sector 23

Main Sector 24

Main Sector 25

Main Sector 26

Main Sector 27

Main Sector 28

Main Sector 29

Main Sector 30

4KWord

32KWord

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M5M29GB640VP

Sector

Sector Size

32KWord

Address Range (h)

2F8000-2FFFFF

2F0000-2F7FFF

2E8000-2EFFFF

2E0000-2E7FFF

2D8000-2DFFFF

2D0000-2D7FFF

2C8000-2CFFFF

2C0000-2C7FFF

2B8000-2BFFFF

2B0000-2B7FFF

2A8000-2AFFFF

2A0000-2A7FFF

298000-29FFFF

290000-297FFF

288000-28FFFF

280000-287FFF

278000-27FFFF

270000-277FFF

268000-26FFFF

260000-267FFF

258000-25FFFF

250000-257FFF

248000-24FFFF

240000-247FFF

238000-23FFFF

230000-237FFF

228000-22FFFF

220000-227FFF

218000-21FFFF

210000-217FFF

208000-20FFFF

200000-207FFF

1F8000-1FFFFF

1F0000-1F7FFF

1E8000-1EFFFF

1E0000-1E7FFF

1D8000-1DFFFF

1D0000-1D7FFF

1C8000-1CFFFF

1C0000-1C7FFF

Main Sector 31

Main Sector 32

Main Sector 33

Main Sector 34

Main Sector 35

Main Sector 36

Main Sector 37

Main Sector 38

Main Sector 39

Main Sector 40

Main Sector 41

Main Sector 42

Main Sector 43

Main Sector 44

Main Sector 45

Main Sector 46

Main Sector 47

Main Sector 48

Main Sector 49

Main Sector 50

Main Sector 51

Main Sector 52

Main Sector 53

Main Sector 54

Main Sector 55

Main Sector 56

Main Sector 57

Main Sector 58

Main Sector 59

Main Sector 60

Main Sector 61

Main Sector 62

Main Sector 63

Main Sector 64

Main Sector 65

Main Sector 66

Main Sector 67

Main Sector 68

Main Sector 69

Main Sector 70

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M5M29GB640VP

Sector

Sector Size

32KWord

Address Range (h)

1B8000-1BFFFF

1B0000-1B7FFF

1A8000-1AFFFF

1A0000-1A7FFF

198000-19FFFF

190000-197FFF

188000-18FFFF

180000-187FFF

178000-17FFFF

170000-177FFF

168000-16FFFF

160000-167FFF

158000-15FFFF

150000-157FFF

148000-14FFFF

140000-147FFF

138000-13FFFF

130000-137FFF

128000-12FFFF

120000-127FFF

118000-11FFFF

110000-117FFF

108000-10FFFF

100000-107FFF

0F0000-0FFFFF

Main Sector 71

Main Sector 72

Main Sector 73

Main Sector 74

Main Sector 75

Main Sector 76

Main Sector 77

Main Sector 78

Main Sector 79

Main Sector 80

Main Sector 81

Main Sector 82

Main Sector 83

Main Sector 84

Main Sector 85

Main Sector 86

Main Sector 87

Main Sector 88

Main Sector 89

Main Sector 90

Main Sector 91

Main Sector 92

Main Sector 93

Main Sector 94

Main Sector 95

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M5M29GB640VP

SECTOR STRUCTURE (BOTTOM)

Sector

Sector Size

4KWord

rd

Address Range (h)

00000-00FFF

01000-01FFF

02000-02FFF

03000-03FFF

04000-04FFF

05000-05FFF

06000-06FFF

07000-07FFF

Boot Sector 0

Boot Sector 1

Parameter Sector 0

Parameter Sector 1

Parameter Sector 2

Parameter Sector 3

Parameter Sector 4

Parameter Sector 5

Main Sector 0

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M5M29GB640VP

Sector

Sector Size

32KWord

Address Range (h)

100000-107FFF

108000-10FFFF

110000-117FFF

118000-11FFFF

120000-127FFF

128000-12FFFF

130000-137FFF

138000-13FFFF

140000-147FFF

148000-14FFFF

150000-157FFF

158000-15FFFF

160000-167FFF

168000-16FFFF

170000-177FFF

178000-17FFFF

180000-187FFF

188000-18FFFF

190000-197FFF

198000-19FFFF

1A0000-1A7FFF

1A8000-1AFFFF

1B0000-1B7FFF

1B8000-1BFFFF

1C0000-1C7FFF

1C8000-1CFFFF

1D0000-1D7FFF

1D8000-1DFFFF

1E0000-1E7FFF

1E8000-1EFFFF

1F0000-1F7FFF

1F8000-1FFFFF

200000-207FFF

208000-20FFFF

210000-217FFF

218000-21FFFF

220000-227FFF

228000-22FFFF

230000-237FFF

238000-23FFFF

Main Sector 31

Main Sector 32

Main Sector 33

Main Sector 34

Main Sector 35

Main Sector 36

Main Sector 37

Main Sector 38

Main Sector 39

Main Sector 40

Main Sector 41

Main Sector 42

Main Sector 43

Main Sector 44

Main Sector 45

Main Sector 46

Main Sector 47

Main Sector 48

Main Sector 49

Main Sector 50

Main Sector 51

Main Sector 52

Main Sector 53

Main Sector 54

Main Sector 55

Main Sector 56

Main Sector 57

Main Sector 58

Main Sector 59

Main Sector 60

Main Sector 61

Main Sector 62

Main Sector 63

Main Sector 64

Main Sector 65

Main Sector 66

Main Sector 67

Main Sector 68

Main Sector 69

Main Sector 70

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M5M29GB640VP

Sector

Sector Size

32KWord

Address Range (h)

240000-247FFF

248000-24FFFF

250000-257FFF

258000-25FFFF

260000-267FFF

268000-26FFFF

270000-277FFF

278000-27FFFF

280000-287FFF

288000-28FFFF

290000-297FFF

298000-29FFFF

2A0000-2A7FFF

2A8000-2AFFFF

2B0000-2B7FFF

2B8000-2BFFFF

2C0000-2C7FFF

2C8000-2CFFFF

2D0000-2D7FFF

2D8000-2DFFFF

2E0000-2E7FFF

2E8000-2EFFFF

2F0000-2F7FFF

2F8000-2FFFFF

300000-307FFF

308000-30FFFF

310000-317FFF

318000-31FFFF

320000-327FFF

328000-32FFFF

330000-337FFF

338000-33FFFF

340000-347FFF

348000-34FFFF

350000-357FFF

358000-35FFFF

360000-367FFF

368000-36FFFF

370000-377FFF

378000-37FFFF

Main Sector 71

Main Sector 72

Main Sector 73

Main Sector 74

Main Sector 75

Main Sector 76

Main Sector 77

Main Sector 78

Main Sector 79

Main Sector 80

Main Sector 81

Main Sector 82

Main Sector 83

Main Sector 84

Main Sector 85

Main Sector 86

Main Sector 87

Main Sector 88

Main Sector 89

Main Sector 90

Main Sector 91

Main Sector 92

Main Sector 93

Main Sector 94

Main Sector 95

Main Sector 96

Main Sector 97

Main Sector 98

Main Sector 99

Main Sector 100

Main Sector 101

Main Sector 102

Main Sector 103

Main Sector 104

Main Sector 105

Main Sector 106

Main Sector 107

Main Sector 108

Main Sector 109

Main Sector 110

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M5M29GB640VP

Sector

Sector Size

32KWord

Address Range (h)

380000-387FFF

388000-38FFFF

390000-397FFF

398000-39FFFF

3A0000-3A7FFF

3A8000-3AFFFF

3B0000-3B7FFF

3B8000-3BFFFF

3C0000-3C7FFF

3C8000-3CFFFF

3D0000-3D7FFF

3D8000-3DFFFF

3E0000-3E7FFF

3E8000-3EFFFF

3F0000-3F7FFF

3F8000-3FFFFF

Main Sector 111

Main Sector 112

Main Sector 113

Main Sector 114

Main Sector 115

Main Sector 116

Main Sector 117

Main Sector 118

Main Sector 119

Main Sector 120

Main Sector 121

Main Sector 122

Main Sector 123

Main Sector 124

Main Sector 125

Main Sector 126

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M5M29GB640VP

2 PRINCIPLES OF OPERATION

3 BUS OPERATION

The product includes an on-chip WSM to manage sec-

tor erase, word/byte write and lock-bit configuration func-

tions.

The local CPU reads and writes flash memory in-sys-

tem. All bus cycles to or from the flash memory conform

to standard microprocessor bus cycles.

After initial device power-up or return from reset mode

(see section on Bus Operations), the device defaults to

read array mode. Manipulation of external memory con-

trol pins allow array read, standby and output disable

operations.

3.1 Read

Information can be read from any sector, configuration

codes or status register independent of the VPP volt-

age. RP can be at VIH.

Status register and identifier codes can be accessed

through the CUI independent of the VPP voltage. All

functions associated with altering memory contents-sec-

tor erase, word/byte write, sector lock/unlock, status and

identifier codes - are accessed via the CUI and verified

through the status register.

The first task is to write the appropriate read mode com-

mand (Read Array, Read Configuration, Read Query or

Read Status Register) to the CUI. Upon initial device

power-up or after exit from reset mode, the device auto-

matically resets to read array mode. In order to read

data, control pins set for CE, OE, WE, RP andWP must

be driven to active. CE and OE must be active to obtain

data at the outputs. CE is the device selection control.

OE is the data output (DQ0-DQ15) control and active

drives the selected memory data onto the I/O bus, WE

must be VIH, RP must be VIH, WP must be at VIL or

VIH.

Commands are written using standard microprocessor

write timings. The CUI contents serve as input to the

WSM, which controls the sector erase, word/byte write

and sector lock/unlock.The internal algorithms are regu-

lated by the WSM, including pulse repetition, internal

verification and margining of data. Addresses and data

are internally latched during write cycles. Address is

latched at falling edge of CE and data latched at rising

edge of WE. Writing the appropriate command outputs

array data, accesses the identifier codes or outputs sta-

tus register data.

3.2 Output Disable

With OE at a logic-high level (VIH), the device outputs

are disabled. Output pins (DQ0-DQ15) are placed in a

high-impedance state.

Interface software that initiates and polls progress of

sector erase, full chip erase, word/byte write and sector

lock/unlock can be stored in any sector. This code is

copied to and executed from system RAM during flash

memory updates. After successful completion, reads are

again possible via the Read Array command. Sector

erase suspend allows system software to suspend a

sector erase to read/write data from/to sectors other than

that which is suspend.Word/byte write suspend allows

system software to suspend a word/byte write to read

data from any other flash memory array location.

3.3 Standby

CE at a logic-high level (VIH) places the device in

standby mode which substantially reduces device power

consumption. DQ0~DQ15 outputs are placed in a high-

impedance state independent of OE. If deselected dur-

ing sector erase, word/byte write or sector lock/unlock,

the device continues functioning, and consuming active

power until the operation completes.

With the mechanism of sector lock, memory contents

cannot be altered due to noise or unwanted operation.

When RP=VIH and VCC<VLKO (lockout voltage), any

data write alteration can be failure. During read opera-

tion, if write VPP voltage is below VPPLK, then hard-

ware level data protection is achieved. With CUI's two-

step command sequence sector erase, word/byte write

or sector lock/unlock, software level data protection is

achieved also.

3.4 Reset

As RP=VIL, it initiates the reset mode. The device en-

ters reset/deep power down mode. However, the data

stored in the memory has to be sustained at least 100ns

in the read mode before the device becomes deselected

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M5M29GB640VP

and output high impedance state.

mands require the command and address within the de-

vice or sector within the device (Sector Lock) to be

locked. The Clear Sector Lock-Bits command requires

the command and address within the device.

In read modes, RP-low deselects the memory, places

output drivers in a high-impedance state and turns off all

internal circuits. RP must be held low for a minimum of

100ns. Time tPHQV is required after return from reset

mode until initial memory access outputs are valid. Af-

ter this wake-up interval tPHEL or tPHWL, normal op-

eration is restored.The CUI is reset to read array mode

and status register is set to 80H. Sector lock bit is set at

lock status.

The CUI does not occupy an addressable memory loca-

tion.It is written whenWE and CE are active (whichever

goes high first). The address and data needed to ex-

ecute a command are latched on the rising edge of WE

or CE. Standard microprocessor write timings are used.

During sector erase, word/byte write or sector lock/un-

lock modes, RP-low will abort the operation. Memory

contents being altered are no longer valid; the data may

be partially erased or written.

In addition, CUI will go into either array read mode or

erase/write interrupted mode.When power is up and the

device reset subsequently, it is necessary to read sta-

tus register in order to assure the status of the device.

Recognizing status register (SR.7~0) will assure if the

device goes back to normal reset and enters array read

mode.

3.5 Read Configuration Codes

The read configuration codes operation outputs the manu-

facturer code, device code, sector lock configuration

codes, and the protection register Using the manufac-

turer and device codes, the system CPU can automati-

cally match the device with its proper algorithms. The

sector lock codes identify locked and unlocked sectors.

3.6 Write

Writing commands to the CUI enable reading of device

data and identifier codes. They also control inspection

and clearing of the status register.WhenVCC=2.7V-3.6V

and VPP=VPPH1/2, the CUI additionally controls sec-

tor erase, full chip erase, word/byte write and sector lock/

unlock.

The Sector Erase command requires appropriate com-

mand data and an address within the sector to be erased.

The Full Chip Erase command requires appropriate com-

mand data and an address within the device.TheWord/

ByteWrite command requires the command and address

of the location to be written. Set Sector lock/unlock com-

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M5M29GB640VP

4 COMMAND DEFINITIONS

When the VPP voltage < VPPLK, read operations from

the status register, identifier codes, or sectors are en-

abled. Placing VPP on VPPH1/2 enables successful

sector erase, full chip erase, word/byte write and sector

lock/unlock.

Device operations are selected by writing specific com-

mands into the CUI.Table 3 defines these commands.

Table 2. Bus Operation ^1,2

Mode

Notes

RP

VIH

VIL

VIH

CE

VIL

VIH

X

OE

VIL

VIH

X

WE

VIH

X

DQ0~DQ15

DOUT

High Z

DIN

Read

1,2

Output Disable

Standby

Reset

2

X

Write

2,3,4,5

VIL

VIH

VIL

Notes:

1. Refer to DC Characteristics for VPPLK, VPP1, VPP2, VPP3 voltage.

2. X can be VIL or VIH for pin and addresses.

3. RP at GND±0.2 to ensure the lowest power consumption.

4. Refer to Table 3 for valid DIN during a write operation.

5. To program or erase the lockable sectors holds WP at VIH.

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M5M29GB640VP

Table 3. Command Definition (1)

Command

Bus

Notes

First Bus Cycle

Operation Address

Second Bus Cycle

Cycles

Data Operation Address Data

Required

(1)

(2)

X

(3)

FFH

(1)

(2)

(3)

Read Array

1

> 2

2

Write

Read Configuration

Read Query

3,4

2,7

3

90H

Read

IA

QA

X

ID

98H

QD

Read Status Register

Clear Status Register

Sector Erase/Confirm

Word/Byte Write

2

70H

SRD

1

3

50H

2

20H

Write

BA

D0H

WD

2

5

40H/10H

B0H

WA

Program/Erase Suspend

1

Program/Erase Resume

1

Write

X

D0H

Sector Lock

2

Write

X

60H

C0H

Write

BA

PA

01H

D0H

2FH

PPH

Sector Unlock

6

Lock-Down Sector

Protection Program

Notes:

1. Bus operation are defined inTable 2 and referred to ACTiming Waveform.

2. X=Any address within device

IA=ID-Code Address (refer to Table 4)

BA=Sector within the sector being erased

WA=Address of memory location to be written

QA=Query Address, QD=Query Data

3. Data is latched from the rising edge of WE or CE (whichever goes high first)

SRD=Data read from status register, see Table 6 for description of the status register bits.

WD=Data to be written at location WA. ID=Data read from identifier codes

4. Following the Read configuration codes command, read operation access manufacturer, device codes, sector

lock/unlock codes, see chapter 4.2.

5. Either 40H or 10H are recognized by the WSM as word/byte write setup.

6. The sector unlock operation simultaneously clear all sector lock.

7. Read Query Command is read for CFI query information.

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4.1 Read Array Command

4.3 Read Status Register Command

Upon initial device power-up and after exit from reset

mode, the device defaults to read array mode.This op-

eration is also initiated by writing the Read Array com-

mand. The device remains enabled for reads until an-

other command is written. Once the internal WSM has

started a sector erase, word/byte write or sector lock

configuration the device will not recognize the Read Ar-

ray command until the WSM completes its operation

unless the WSM is suspended via a Sector Erase Sus-

pend or Word Write Suspend command. If RP=VIL de-

vice is in read Read Array command mode, this read

operation no longer requiresVPP.The Read Array com-

mand functions independently of the VPP voltage and

RP can be VIH.

CUI writes read status command (70H).The status reg-

ister may be read to determine when a sector erase,

word/byte write or lock-bit configuration is complete and

whether the operation completed successfully. (refer to

table 6) It may be read at any time by writing the Read

Status Register command. After writing this command,

all subsequent read operations output data from the sta-

tus register until another valid command is written.The

status register contents are latched on the falling edge

of CE or OE, whichever occurs. CE or OE must toggle

toVIH before further reads to update the status register

latch.The Read Status Register command functions in-

dependently of the VPP voltage. RP can be VIH.

4.4 Clear Status Register Command

4.2 Read Configuration Codes Command

Status register bits SR.5, SR.4, SR.3 or SR.1 are set to

"1"s by the WSM and can only be reset by the Clear

Status Register command (50H). These bits indicate

various failure conditions (seeTable 6).By allowing sys-

tem software to reset these bits, several operations (such

as cumulatively erasing multiple sectors or writing sev-

eral words/bytes in sequence) may be performed. The

status register may be polled to determine if an error

occurred during the sequence.

The configuration code operation is initiated by writing

the Read Configuration Codes command (90H). To re-

turn to read array mode, write the Read Array Command

(FFH). Following the command write, read cycles from

addresses shown in Table 4 retrieve the manufacturer,

device, sector lock configuration codes (see Table 4 for

configuration code values).To terminate the operation,

write another valid command. Like the Read Array com-

mand, the Read Configuration Codes command func-

tions independently of the VPP voltage and RP can be

VIH. Following the Read Configuration Codes command,

the information is shown:

To clear the status register, the Clear Status Register

command (50H) is written on CUI. It functions indepen-

dently of the applied VPP Voltage. RP can be VIH.This

command is not functional during sector erase or word

write suspend modes.

Table 4: ID Code

Code

Address

(A19-A0)

00000H

00001H

Data

(DQ15-DQ0)

00C2H

88CC/88CDH

LocK

Manufacturer Code

Device Code

Sector Lock Configuration XX002H

- Sector is unlocked

DQ0=0

DQ0=1

DQ1=1

PR-LK

- Sector is locked

- Sector is locked-down

Protection Register Lock 80

Protection Register

81-88

PR

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M5M29GB640VP

should be checked. If word write error is detected, the

status register should be cleared.The internalWSM verify

only detects errors for "1"s that do not successfully write

to "0"s. The CUI remains in read status register mode

until it receives another command.

4.5 Sector Erase Command

Erase is executed one sector at a time and initiated by a

two-cycle command. A sector erase setup is first writ-

ten (20H), followed by a sector erase confirm (D0H).This

command sequence requires appropriate sequencing and

an address within the sector to be erased. Sector pre-

conditioning, erase, and verify are handled internally by

the WSM. After the two-cycle sector erase sequence is

written, the device automatically outputs status register

data when read (see Figure 8).The CPU can detect sec-

tor erase completion by analyzing the output data of the

status register bit SR.7.

Reliable word writes can only occur when

VCC=2.7V~3.6V andVPP=VPPH1/2.In the absence of

this high voltage, memory contents are protected against

word writes. If word write is attempted while

VPP<VPPLK, status register bits SR.3 and SR.4 will be

set to "1". Successful word write requires for boot sector

that WP is VIH the corresponding sector lock-bit be

cleared. In parameter and main sectors case, it must be

cleared the corresponding sector lock-bit. If word write

is attempted when the excepting above sector being

clocked conditions, SR.1 and SR.4 will be set to "1".

Word write is not functional.

When the sector erase is complete, status register bit

SR.5 should be checked. If a sector erase error is de-

tected, the status register should be cleared before sys-

tem software attempts corrective actions. The CUI re-

mains in read status register mode until a new com-

mand is issued.

4.7 Sector Erase Suspend Command

This two-step command sequence of set-up followed by

execution ensures that sector contents are not acciden-

tally erased. An invalid sector Erase command sequence

will result in both status register bits SR.4 and SR.5

being set to "1". Also, reliable sector erasure can only

occur when 2.7V~3.6V and VPP=VPPH1/2. In the ab-

sence of this high voltage, sector contents are protected

against erasure. If sector erase is attempted while

VPP<VPPLK SR.3 and SR.5 will be set to "1". To suc-

cessfully erase the boot sector, the corresponding sec-

tor lock-bit must be clear first. In parameter and sectors

case, it must be cleared the corresponding sector lock-

bit. If sector erase is attempted when the excepting

above sector being locked conditions, SR.1 and SR.5

will be set to "1". Sector erase is not functional.

The Sector Erase Suspend command (50H) allows sec-

tor-erase interruption to read or word write data in an-

other sector of memory.Once the sector erase process

starts, writing the Sector Erase Suspend command re-

quests that theWSM suspend the sector erase sequence

at a predetermined point in the algorithm. The device

outputs status register data when read after the Sector

Erase Suspend command is written.Polling status reg-

ister bits SR.7 and SR.6 can determine when the sector

erase operation has been suspended (both will be set to

"1"). Specification tWHR12 defines the sector erase sus-

pend latency.

When Sector Erase Suspend command write to the CUI,

if sector erase was finished, the device places read ar-

ray mode.Therefore, after Sector Erase Suspend com-

mand write to the CUI, Read Status Register command

(70H) has to write to CUI, then status register bit SR.6

should be checked for placing the device in suspend

mode.

4.6 Word Write Command

Word write is executed by a two-cycle command se-

quence.Word write setup (standard 40H or alternate 10H)

is written, followed by a second write that specifies the

address and data.TheWSM then takes over, controlling

the word write and write verify algorithms internally. Af-

ter the word write sequence is written, the device auto-

matically outputs status register data when read (see

Figure 6). The CPU can detect the completion of the

word write event by analyzing the status register bit SR.7.

At this point, a Read Array command can be written to

read data from sectors other than that which is sus-

pended.AWordWrite commands sequence can also be

issued during erase suspend to program data in other

sectors. Using the Word Write Suspend command (see

Section 4.9), a word write operation can also be sus-

pended. During a word write operation with sector erase

suspended, status register bit SR.7 will return to "0".

When word write is complete, status register bit SR.4

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M5M29GB640VP

However, SR.6 will remain "1" to indicate sector erase

suspend status.

to the flash memory, the WSM will continue the Word

write process. Status register bits SR.2 and SR.7 will

automatically clear. After the Word Write Resume com-

mand is written, the device automatically outputs status

register data when read (see Figure 4). VPP must re-

main atVPPH1/2 while in word write suspend mode.RP

must also remain at VIL or VHH (the same RP level

used for word write).

The only other valid commands while sector erase is

suspended are Read Status Register and sector erase

Resume. After a Sector Erase Resume command is writ-

ten to the flash memory, the WSM will continue the sec-

tor erase process. Status register bits SR.6 and SR.7

will automatically clear. After the Erase Resume com-

mand is written, the device automatically outputs status

register data when read (see Figure 4). VPP must re-

main at VPPH1/2 while sector erase is suspended. RP

must also remain at VIL or VHH (the same RP level

used for sector erase). WP must also remain at VIL or

VIH (the same WP level used for sector erase). Sector

cannot resume until word write operations initiated dur-

ing sector erase suspend has completed.

If the time between writing theWordWrite Resume com-

mand and writing the Word Write Suspend command is

short and both commands are written repeatedly, a longer

time is required than standard word write until the comple-

tion of the operation.

If the time between writing the Sector Erase Resume

command and writing the Sector Erase Suspend com-

mand is shorter than 15ms and both commands are writ-

ten repeatedly, a longer time is required than standard

sector erase until the completion of the operation.

4.8 Word Write Suspend Command

The Word Write Suspend command allows word write

interruption to read data in other flash memory locations.

Once the word write process starts, writing the Word

Write Suspend command requests that the WSM sus-

pend theWord write sequence at a predetermined point

in the algorithm. The device continues to output status

register data when read after the Word Write Suspend

command is written.Polling status register bits SR.7 and

SR.2 can determine when the word write operation has

been suspended (both will be set to "1"). Specification

tWHR11 defines the word write suspend latency.

WhenWord Write Suspend command write to the CUI, if

word write was finished, the device places read array

mode. Therefore, after Word Write Suspend command

write to the CUI, Read Status Register command (70H)

has to write to CUI, then status register bit SR.2 should

be checked for placing the device in suspend mode.

At this point, a Read Array command can be written to

read data from locations other than that which is sus-

pended.The only other valid commands while word write

is suspended are Read Status Register andWord Write

Resume.AfterWord Write Resume command is written

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M5M29GB640VP

4.9 Sector Lock/Unlock /Lock-down Command

4.9.1 Sector Locked State

4.9.4 Read Sector Lock Status

The lock status of every sector can be read through

Read Configuration mode.To enter this mode first com-

mand write 90H to the device.The next sector reads at

address +00002 will output the lock status of this sec-

tor. The lock status can be read from the lowest two

output pins DQ0 and DQ1. DQ0, DQ0 indicates the sec-

tor lock/unlock status and set by the lock command and

cleared by the unlock command. When entering lock-

down, the lock status is automatically set. DQ1 indi-

cates lock-down status and is set by the lock-down com-

mand. It cannot be further cleared by software, only by

device reset or power-down.

The default status of all sectors when power-up or reset

is locked. Any attempt on program or erase operations

will result in an error on bit SR.1 of a locked sector.The

status of a locked sector can be changed to unlocked or

lock-down using software commands. An unlocked sec-

tor can be locked by locked by writing the sector lock

command sequence, 60H followed by 01H.

4.9.2 Sector Unlocked State

An unlocked sector can be programmed or erased. All

unlocked sector return to the locked state when the de-

vice is either reset or powered down. The status of an

unlocked sector can be changed to locked or locked-

down using software commands. A locked sector can

be unlocked by writing unlock command sequence, 60H

followed by D0H.

Sector Lock ConfigurationTable

Lock Status

Data

Sector is unlocked

Sector is locked

Sector is locked-down

DQ0=0

DQ0=1

DQ1=1

4.9.3 Sector Locked-Down State

Sectors which are locked-down are protected from pro-

gram and erase operation; however, the protection sta-

tus of three sectors cannot be changed using software

commands alone. Any sector locked or unlocked can be

locked-down by writing the lock-down command se-

quence, 60H followed by 2FH.When the device is reset

or powered down, the locked-down sectors will revert to

the locked state.

The status of WP will determine the function of sector

lock-down and is summarized is followed:

WP

Sector Lock-down Description

WP=0

- sectors are protected from program, erase,

and lock status changes

WP=1

- the sector lock-down function is disabled

- an individual lock-down sector can be un

locked and relocked via software command.

Once WP goes low, sectors that previously

locked-down returns to lock-down state

regardless of any changes whenWP was

high.

In addition, sector lock-down is cleared only when the

device is reset or powered down.

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M5M29GB640VP

sector is being placed in erase suspend, the locking sta-

tus bits will be changed immediately, but when the erase

is resumed, the erase operation will complete.

4.9.5 Sector Locking while Erase Suspend

The sector lock status can be performed during an erase

suspend by using standard locking command sequences

to unlock, lock, or lock-down a sector.

Locking operation cannot be performed during a program

suspend.

In order to change sector locking during an erase opera-

tion, the write erase suspend command (B0H) is placed

first; then check the status register until it is shown that

the actual erase operation has been suspended. Subse-

quent writing the desired lock command sequence to a

sector and the lock status will be changed. When com-

pleting any desired lock, read or program operation, re-

sume the erase operation with the Erase Resume Com-

mand (D0H).

4.9.6 Status Register Error Checking

The operation of locking system for this device can be

used the term "state (X,Y,Z)" to specify locking status,

where X=value of WP,Y=bit DQ1 of the sector lock sta-

tus register, and Z=bit DQ0 of the sector lock status

register. DQ0 indicates if a sector is locked (1) or un-

locked (0). DQ1 indicates if a sector has been locked-

down(1) or not (0).

If a sector is locked or locked-down during the same

Table 5. Sector Locking State Transitions

Current State

Erase/Prog.

Operation if

Lock Command Input Result (Next State)

(X,Y, Z)=

WP DQ1 DQ0

Name

Unlocked

Enable ?

Yes

No

Lock

(001)

Unlock

Unchanged

(100)

Lock-Down

(011)

0

1

0

1

0

1

0

1

0

1

0

1

Locked

Unchanged

(101)

(011)

Locked-Down

Unlocked

No

Unchanged

(111)

Yes

No

Locked

Unchanged

(111)

Lock-Down Disabled

Yes

No

Unchanged

(110)

(111)

Unchanged

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M5M29GB640VP

Table 6. Status Register Definition

WSMS

7

BESS

6

ES

5

PS

4

VPPS

3

PSS

2

BLS

1

R

0

NOTES:

Check WSM bit first to determine word program or sec-

tor Erase completion, before checking Program or Erase

Status bits.

SR.7 = WRITE STATE MACHINE STATUS (WSMS)

1 = Ready

0 = Busy

When Erase Suspend is issued, WSM halts execution

and sets both WSMs and ESS bits to "1". ESS bit re-

mains set to "1" until an Erase Resume command is

issued.

SR.6 = SECTOR ERASE SUSPEND STATUS (BSS)

1 = Sector ERASE Suspended

0 = Sector Erase in Progress/Completed

SR.5 = ERASE STATUS (ES)

1 = Error in Programming

0 = Successful Sector Erase or Clear Sector Lock-

Bits

When this bit (SR.5) is set to "1", it means WSM is

unable to verify successful sector erasure.

When this bit is set to "1",WSM has attempted but failed

to program a word/byte.

SR.4 = PROGRAM STATUS (PS)

1 = Error in Programming

0 = Successful Programming

SR.3 bit is not guaranteed to report accurate feedback

between VPPLK and VPP min.

SR.3 = VPP STATUS (VPPS)

1 = VPP Low Detect, Operation Abort

0 = VPP OK

When program suspend is issued, WSM halts the ex-

ecution and sets both WSMs and SR.2 bit to "1". SR.2

remains set to "1" until a Program Resume command is

issued.

SR.2 = PROGRAM SUSPEND STATUS (WWSS)

1 = Program Suspended

0 = Program in Progress/Completed

If a program or erase operation is attempted to one of

the locked sectors, this bit is set by the WSM. The op-

eration specified is aborted and the device is returned to

read status mode.

SR.1 = SECTOR LOCK STATUS

1 =Program/Erase attempted an a locked sector;

operation aborted

0 = No operation to locked sectors

SR. 0 is reserved for future use and should be masked

out when polling the status register.

SR.0 = RESERVED FOR FUTURE ENHANCEMENTS

(R)

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M5M29GB640VP

read cycles from addresses shown in Table 7 will re-

trieve the specified information. To return to read array

mode, write the Read Array Command (FFH).

5. 128-Bit Protection Register

The 128-bits of protection register are divided into two

64-bit segments. One of the segments is programmed

at MXIC side with unique 64-bit number; where changes

are forbidden. The other segment is left empty for cus-

tomer to program. Once the customer segment is pro-

grammed, it can be locked to prevent further reprogram-

ming.

Two-cycle Protection Program Command is used to pro-

gram protection register bits.The 64-bit register is pro-

grammed 16-bits at a time. First write C0H protection

program setup.The next write to the device will latch in

address and data and program the specified location.

The allowable address are also show inTable 7.Refer to

Figure 6 for the Protection Register Programming Flow-

chart.

5.1 Protection Register Read & Programming

Any attempt to address Protection Program command

onto undefined protection register address space will

result in a Status Register error (SR.4 set to "1"). In

addition, attempting to program or to previously locked

protection register segment will result in a status regis-

ter error (SR.4=1, SR.1=1).

The protection register is read in the configuration read

mode, which follows the stated Command Bus Defini-

tions.

The device is switched to this read mode by writing the

Read Configuration command (90H). Once this mode,

Table 7. Word-Wide Protection Register Addressing

Word

User

A7

1

A6

0

A5

0

A4

0

A3

0

A2

0

A1

0

A0

0

Lock

Both

0

1

2

3

4

5

6

7

Factory

Customer

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

Table 8. Protection Register Memory Map

5.2 Protection Register Locking

The user-programmable segment of the protection reg-

ister is lockable by programming Bit 1 of the PR-Lock

location to 0. Bit 0 of this location is programmed to 0 at

MXIC to protect the unique device number. This bit is

set using the unique device number.This bit is set using

the protection program command to program "FFFD" to

PR-LOCK location. After these bits have been pro-

grammed, no further changes can be made to the value

stored in the protection register.Protection program com-

mand to a locked section will result in a status register

error (Program Error bit SR.4 and Lock Error bit SR.1

will be set to 1). Protection register lockout state is not

reversible.

Protection Register Purpose

Bit Address

88H~85H

84H~87H

4 word user program Register

4 word factory program

Register

80H(Bit0 & Bit1)

Protection Register Lock

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M5M29GB640VP

WARNING:Stressing the device beyond the "Absolute

Maximum Ratings" may cause permanent damage.

These are stress ratings only. Operation beyond the

"Operating Conditions" is not recommended and ex-

tended exposure beyond the "Operation Conditions" may

affect device reliability.

6 ELECTRICAL SPECIFICATIONS

6.1 ABSOLUTE MAXIMUM RATINGS

OperatingTemperature

During Read, Sector Erase, Word/Byte

Write . . . . . . . . . . . . . . . . . . . . . . . . . -40^oC to +85^oC

Storage Temperature . . . . . . . . . . . . . .-65^oC to +125^oC

Voltage on Any Pin (except VCC and

VPP with respect to GND) ..... ......-0.5V to +5V⁽¹⁾

VCC Supply Voltage . . . . . . . . . . . . .-0.2V to +4.6V⁽²⁾

VPP Supply Voltage (for sector erase and

VPP with respect to GND) . . . . . . . .-0.5V to +13.5V^(1,2,4)

VCC andVCCQ SupplyVoltage

with respect to GND. . . . . . . . . . . . . . . . .-0.2V to +5.0V⁽¹⁾

Output Short Circuit Voltage . . . . . . . . . . . . .100mA⁽³⁾

1. Minimum DC voltage is -0.5V on input pins. During

transitions, this level may undershoot to -2.0V for pe-

riods <20ns. Maximum DC voltage on input/output pins

toVCC+0.5V which during transition; may overshoot

to VCC+2.0V for periods <20ns.

2. Maximum DC voltage on VPP may overshoot to

+14.0V for periods <20ns.

3. Output shorted for no more than one second.No more

than one output shorted at a time.

4. VPP voltage is normally 1.65V~3.6V. Connection to

supply of 11.4~12.6V can only be done for 1000

cycles on the main sectors and 25000 cycles on the

parameter sectors during program/erase. VPP may

be connected to 12V for a total of 80 hours maximum.

6.2 Operating Conditions (Temperature andVCC Operating Conditions)

Symbol

TA

Parameter

Min.

-40

Max.

+85

3.6

Unit

^oC

V

Notes

OperatingTemperature

VCC SupplyVoltage

I/O Supply Voltage

SupplyVoltage

VCC1

2.7

1

2

VCCQ1

VCCQ2

VCCQ3

VPP1

2.7

3.6

V

1.65

1.8

2.5

V

2.5

V

1.65

11.4

3.6

V

VPP2

SupplyVoltage

12.6

V

Cycling

Sector Erase Cycling

NOTE:

1.VCC and VCCQ must share the same supply when they are in the VCC1 range.

2. Applying VPP=11.4~12.6V during a program/erase can only be done for a maximum of 1000 cycles on the main

sectors and 2500 cycles on the parameter sectors.VPP may be connected to 12V for a total of 80 hours maximum.

6.2.1 Capacitance ⁽¹⁾(TA=+25^oC, f=1MHz)

Symbol

CIN

Parameter

Typ.

6

Max.

8

Unit

pF

Test Condition

VIN=0.0V

Input Capacitance

Output Capacitance

COUT

10

12

pF

VOUT=0.0V

NOTE:

1.Sampled, not 100% tested.

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M5M29GB640VP

6.2.2 AC Input/Output Test Conditions

VCCQ

VCCQ/2 Output

TEST POINTS

Input VCCQ/2

0.0

Note:AC test inputs are driven at VCCQ/2 for a Logic "1" and 0.0V for a Logic "0".

Figure 1.Transient Input/Output ReferenceWaveform

Figure 2. SWITCHINGTEST CIRCUITS

TEST SPECIFICATIONS

Test Condition

Output Load

90

1 TTL gate

100

120

Unit

pF

DEVICE UNDER

TEST

2.7K ohm

Output Load Capacitance, CL 30

(including jig capacitance)

Input Rise and Fall Times

Input Pulse Levels

3.3V

5

ns

V

0.0-3.0

1.5

CL

6.2K ohm

DIODES=IN3064

OR EQUIVALENT

Input timing measurement

reference levels

V

Output timing measurement

reference levels

1.5

V

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M5M29GB640VP

6.2.3 AC Characteristic -- Read Only Operation (1)

-90

-110

Sym.

Parameter

Notes

Min.

Max.

Min.

Max.

Unit

ns

tAVAV

tAVQV

tELQV

tGLQV

tPHQV

tELQX

tGLQX

tEHQZ

tGHQZ

tOH

Read CycleTime

90

110

Address to Output Delay

CE to Output Delay

OE to Output Delay

RP to Output Delay

CE to Output in Low Z

OE to Output in Low Z

CE to Output in High Z

OE to Output in High Z

Output Hold from Address,

CE, or OE Change,

Whichever Occurs First

90

110

30

2

30

150

3

0

20

0

Notes:

1. See ACWaveform:Read Operations.

2. OE may be delayed up to tELQV-tGLQV after the falling edge of CE without impact on tELQV.

3. Sampled, but not 100% tested.

4. See test Configuration.

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M5M29GB640VP

Figure 3. READ-ONLY OPERATION AC WAVEFORM

Device and

Address Selection

Data

Valid

Standby

VIH

Addresses(A)

Address Stable

VIL

tAVAV

VIH

CE (E)

VIL

tEHQZ

tGHQZ

VIH

OE (G)

VIL

VIH

WE (W)

tGLQV

VIL

tOH

tGLQX

tELQV

tELQX

VOH

DATA

(D/Q)

High Z

Valid Output

VOL

tAVQV

VIH

tPHQV

RP (P)

VIL

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M5M29GB640VP

6.2.5 AC Characteristic -- Write Operation

-90

Min.

150

0

-110

Min.

150

0

Sym.

tPHWL/tPHEL RP High Recovery toWE(CE) Going Low

tELWL/tWLEL CE(WE) Setup toWE(CE) Going Low

Parameter

Note

Unit

ns

tELEH/tWLWH WE(CE) Pulse Width

4

2

50

0

70

60

70

0

tDVWH/tDVEH Data Setup to WE(CE) Going High

tAVWH/tAVEH Address Setup to WE(CE) Going High

tWHEH/tEHWH CE(WE) HoldTime fromWE(CE) High

tWHDX/tEHDX Data HoldTime fromWE(CE) High

tWHAX/tEHAX Address Hold Time fromWE(CE) High

tWHWL/tEHEL WE(CE) Pulse Width High

2

4

3

0

30

200

0

30

200

0

tVPWH/tVPEH VPP Setup to WE(CE) Going High

tQVVL

VPP Hold from Valid SRD

tBHWH/tBHEH WP Setup to WE(CE) Going High

0

tQVBL

tWHGL

WP Hold fromValid SRD

WE High to OE Going Low

0

30

Notes:

1. Write timing characteristics during erase suspend are the same as during write-only operations.

2. Refer to Table 5 for valid AIN or DIN.

3. Sampled, not 100% tested.

4. Write pulse width (tWP) is defined from CE or WE going low (whichever goes low last) to CE or WE going high

(whichever goes high first). Hence, tWP=tWLWH=tELEH=tELWH. Similarly, Write pulse width high (tWPH) is

defined from CE or WE going high (whichever goes high first) to CE or WE going low (whichever goes low first).

Hence, tWPH=tWHWL=tEHEL=tEHWL.

5. SeeTest Configuration.

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M5M29GB640VP

Figure 4. WRITE AND ERASE OPERATION AC WAVEFORM

A

B

C

D

E

F

VIH

VIL

Address (A)

AIN

tAVWH

(tAVEH)

tWHAX

(tEHAX)

(Note 1)

VIH

VIL

CE(WE)[E(W)]

tELWL

(tWLEL)

tWHEH

(tEHWH)

VIH

VIL

OE(G)

Disable

tWHWL

(tEHEL)

tWHGL

(Note 1)

VIH

VIL

WE,(CE)[W(E)]

Enable

tELEH

(tWLWH)

tDVWH

(tEVEH)

tWHDX

(tEHDX)

VIH

VIL

High Z

Valid

SRD

DATA[D/Q]

RP[P]

DIN

tPHWL

(tPHEL)

VOH

VOL

tQVBL

tQVVL

tBHWH

(tBHEH)

VIH

VIL

WP

tVPWH

(tVPEH)

VPPH2

VPPH1

VPP[V]

VPPLK

VIL

Notes:

1. CE must be toggled low when reading Status Register Data. WE must be inactive (high) when reading Status

Register Data.

A.VCC Power-Up and Standby.

B.Write Program or Erase Setup Command.

C.WriteValid Address and Data (for Program) or Erase Confirm Command.

D.Automated Program or Erase Delay.

E.Read Status Register Data (SRD): reflects completed program/erase operation.

F.Write Read Array Command.

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M5M29GB640VP

6.2.5 Erase and Program Timing (1)

Vpp

Note

2,3

1.65V-3.6V

11.4V-12.6V

Symbol

Parameter

Typ(1)

Max

Typ(1)

Max

Unit

tBWPB

4-KW Parameter Sector

Word ProgramTime(Word)

32-KW Main Sector

Word ProgramTime

0.10

0.30

0.03

0.24

8

0.12

s

tBWMB

2,3

3

0.8

12

0.5

1

2.4

200

4

1

185

4.0

5

s

us

s

tWHQV1/

tEHQV1

tWHQV2/

tEHQV2

tWHQV3/

tEHQV3

tWHRH1/

tEHRH1

tWHRH2/

tEHRH2

4-KW Parameter Sector

Erase Time (Byte)

0.4

0.6

15

32-KW Main Sector

Erase Time (Byte)

5

s

Program Suspend Latency

15

20

us

Erase Suspend Latency

3

15

Notes:

1. Typical values measured at TA=+25°C and nominal voltage.

2. Excludes external system-level overhead.

3. Sampled, but not 100% tested.

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M5M29GB640VP

Figure 5. RESET WAVEFORM

VIH

VIL

RP (P)

tPHQV

tPHWL

tPHEL

tPLPH

tPLRH

(A) Reset during Read Mode

tPHQV

Abort

Complete

tPHWL

tPHEL

VIH

RP (P)

VIL

tPLPH

(B) Reset during Program or Sector Erase, tPLPH < tPLRH

Abort

Deep

Power-

Down

tPHQV

tPHWL

tPHEL

Complete

tPLRH

VIH

VIL

RP (P)

tPLPH

(C) Reset Program or Sector Erase, tPLPH > tPLRH

AC Characteristic -- Under Reset Operation

Sym.

Parameter

VCC=2.7V~3.6V

Unit

Notes

Min.

Max.

tPLPH

RP Low to Reset during Read

100

ns

2,4

(If RP is tied to VCC, this specification is applicable)

tPLRH1 RP Low to Reset during Sector Erase

tPLRH2 RP Low to Reset during Program

22

12

us

3,4

Notes:

1. See Section 3.4 for a full description of these conditions.

2. If tPLPH is < 100ns the device may still reset but this is not guaranteed.

3. If RP is asserted while a sector erase or word program operation is not executing, the reset will complete within

100ns.

4. Sampled, but not 100% tested.

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M5M29GB640VP

6.2.6 DC Characteristics

Sym. Parameter

VCC

VCCQ

Note

1,2

2.7V-3.6V

2.7V-2.85V

1.65V-2.5V

2.7V-3.0V

1.8V-2.5V Unit Test Conditions

Typ. Max. Typ. Max.

Typ.

Max.

ILI

Input Load Current

± 1

± 10

15

± 1

± 10

50

± 1 uA VCC=VCC Max.

VCCQ=VCCQ Max.

VIN=VCCQ or GND

± 10 uA VCC=VCC Max.

VCCQ=VCCQ Max.

VIN=VCCQ or GND

250 uA VCC=VCC Max.

CE=RP=VCCQ

ILO

Output Leakage

Current

1,2

1

0.2

7

0.2

20

0.2

ICCS VCC Standby Current

150

or during Program/

Erase Suspend

WP=VCCQ or GND

20 uA VCC=VCC Max

VCCQ=VCCQ Max

VIN=VCCQ or GND

RP=GND±0.2V

ICCD VCC Power-Down

Current

1,2

7

9

15

18

7

8

20

15

7

9

ICCR VCC Read Current

1,2,3

15 mA VCC=VCC Max

VCCQ=VCCQ Max

OE=VIH, CE=VIL

f=5MHz, IOUT=0mA

Inputs=VIL or VIH

IPPD VPP Deep Power-

Down Current

1

0.2

5

0.2

5

0.2

5

uA RP=GND±0.2V

VPP < VCC

IPPR VPP Read Current

1,4

2

±15

200

0.1

2

±15

200

55

2

±15 uA VPP < VCC

200 uA

50

18

50

18

0.05

55 mA VPP=VPP1,

ICCW+ VCC+VPP Program

IPPW Current

Program in Progress

8

22

0.1

22

10

21

16

21

30

45

10

21

16

21

30 mA VPP=VPP2(12V)

Program in Progress

45 mA VPP=VPP1

Erase in Progress

1,4

0.05

8

ICCE+ VCC+VPP Erase

IPPE Current

45 mA VPP=VPP2(12V)

Erase in Progress

0.05

0.1

45 mA VPP=VPP1

Program or Erase

IPPES VCC+VPP Program

+

or Erase Suspend

Suspend in Progress

200 mA VPP=VPP2(12V)

Program or Erase

IPPWS Current

50

200

50

200

50

Suspend in Progress

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M5M29GB640VP

VCC

VCCQ

Note

2.7V-3.6V

2.7V-2.85V

1.65V-2.5V

2.7V-3.0V

1.8V-2.5V

SYM. Parameter

Unit Test Conditions

Typ. Max. Typ. Max.

Typ.

Max.

0.4

VIL

Input LowVoltage

-0.4 VCC* -0.4

0.22V

0.4

-0.4

V

VIH

VOL

Input HighVoltage

Output LowVoltage

2.0 VCCQ VCCQ VCCQ VCCQ VCCQ V

+0.3V -0.4V +0.3V -0.4V +0.3V

-0.1

0.1

-0.1

0.1

-0.1

0.1

1.0

V

VCC=VCC Min

VCC=VCCQ Min

IOL=100uA

VOH

Output HighVoltage

VCCQ

-0.1V

VCCQ

-0.1V

VCCQ

-0.1V

VCC=VCC Min

VCC=VCCQ Min

IOH=-100uA

VPPLK VPP Lock-Out Voltage

6

1.0

3.6

1.0

CompleteWrite

Protection

VPP1 VPP during Program/

VPP2 Erase Operations

VLKO VCC Prog/Erase

LockVoltage

6

1.65

1.5

V

6,7

11.4 12.6

1.5

1.2

VLKO2 VCCQ Prog/Erase

LockVoltage

1.2

V

Notes:

1. All currents are in RMS unless otherwise noted.Typical values at nominal VCC, TA=+25°C.

2. The test conditions VCC Max, VCCQ Max, VCC Min, and VCCQ Min refer to the maximum or minimum VCC or

VCCQ voltage listed at the top of each column.VCC Max=3.3V for 0.25um 32-Mbit devices.

3. Power Savings (Mode) reduces ICCR to approximately standby levels in static operation (CMOS inputs).

4. Sampled, but not 100% tested.

5. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is

sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and

ICCR.

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M5M29GB640VP

Figure 6. Automated Word Programming Flowchart

Bus

Command Comments

Start

Operation

Write

Program

Setup

Data=40H

Write 40H

Write

Read

Program

Data=Data to Program

Addr=Location to Program

Status Register DataToggle

CE or OE to Update Status

Register Data

Program Address/Data

Read Status Register

Standby

Check SR.7

1=WSM Ready

0=WSM Busy

No

SR.7=1 ?

Repeat for subsequent programming operations.

SR full status check can be done after each program

or after a sequence of program operations.

Write FFH after the last program operation to reset

device to read array mode.

Yes

Full Status

Check if Desired

Program Ccomplete

Bus

Command

Comments

FULL STATUS CHECK PROCEDURE

Operation

Standby

Check SR.3

Read Status Register

Data(See Above)

1=VPP Low Detect

Check SR.4

Standby

1=VPP Program Detect

Check SR.11

1

VPP Range Error

Programming Error

SR.3=

1=Attempted Program to

Locked Sector-Program

Aborted

0

1

SR.4=

SR.3 MUST be cleared, if set during a program at-

tempt, before further attempts are allowed by theWrite

State Machine.

0

SR.4, SR.3, and SR.1 are only cleared by the Clear

Status Register Command, in cases where multiple

programmed before full status is checked.

If an error is detected, clear the status register before

attempting retry or other error recovery.

Attempted Program to

Locked Block- Aborted

SR.1=

0

Program Successful

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M5M29GB640VP

Figure 7. Program Suspend/Resume Flowchart

Start

Bus

Command Comments

Operation

Write

Program

Suspend

Data=B0H

Addr=X

Write B0H

Write 70H

Write

Read

Read Status Data=70H

Addr=X

Status Register DataToggle

Read

Status Register

CE or OE to Update Status

Register Data

Addr=X

0

Standby

Stanby

Check SR.7

SR.7=

1=WSM Ready

0=WSM Busy

1

Check SR.2

0

1=Program Suspended

0=Program Completed

SR.2=

Program Completed

1

Write

Read

Read Array Data=FFH

Addr=X

Write FFH

Read array data from

sector other than the one

being programmed.

Data=D0H

Read Array Data

Done Reading

Write

Program

Resume

Addr=X

No

Yes

Write D0H

Write FFH

Program Write Resumed

Read Array Data

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M5M29GB640VP

Figure 8. Automated Sector Erase Flowchart

Bus

Command Comments

Start

Operation

Write

Erase Setup Data=20H

Addr=Within Sector to Be

Write 20H

Erased

Write

Erase

Data=D0H

Write D0H and

Block Address

Confirm

Addr=Within Sector to Be

Erased

Read

Status Register

Suspend

Erase Loop

Read

Status Register DataToggle

CE or OE to Update Status

Register Data

No

Yes

0

Standby

Check SR.7

SR.7=

Suspend Erase

1=WSM Ready

0=WSM Busy

1

Repeat for subsequent block erasures.

Full status check can be done after each sector erase

or after a sequence of sector erasures.

Write FFH after the last write operation to reset device

to read array mode.

Full Status Check if Desired

Sector Erase Complete

Bus

Command

Comments

FULL STATUS CHECK PROCEDURE

Operation

Standby

Read Status Register

Data(See Above)

Check SR.3

1=VPP Low Detect

Check SR.4, 5

Both 1=Command

Sequence Error

Check SR.5

Standby

1

VPP Range Error

SR.3=

Standby

0

1=Sector Erase Error

Check SR.1

1

SR.4,5=

Command Sequence Error

1=Attempted Erase of

Locked Sector- Erase

Aborted

0

SR.1 and SR.3 MUST be cleared, if set during an erase

attempt, before further attempts are allowed by the

Write State Machine.

1

SR.5=

Sector Erase Error

0

SR.1,3,4,5 are only cleared by the Clear Status Reg-

ister Command, in cases where multiple bytes are

erased before full status is checked.

Attempted Erase of Locked

Sector - Aborted

1

SR.1=

If an error is detected, clear the status register before

attempting retry or other error recovery.

0

Sector Erase Successful

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M5M29GB640VP

Figure 9. Erase Suspend/Resume Flowchart

Bus

Command Comments

Start

Operation

Write

Erase

Data=B0H

Addr=X

Write B0H

Write 70H

Suspend

Write

Read

Read Status Data=70H

Addr=X

Status Register DataToggle

Read

Status Register

CE or OE to Update Status

Register Data

Addr=X

0

Standby

Stanby

Check SR.7

SR.7=

1=WSM Ready

0=WSM Busy

1

Check SR.6

0

1=Erase Suspended

0=Erase Completed

SR.6=

Erase Completed

Write

Read

Read Array Data=FFH

1

Addr=X

Write FFH

Read array data from

sector other than the one

being erased.

Data=D0H

Read Array Data

Done Reading

Write

Erase

Resume

Addr=X

No

Yes

Write D0H

Write FFH

Erase Write Resumed

Read Array Data

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M5M29GB640VP

Figure 10. Locking Operations Flowchart

Bus

Command

Comments

Operation

Write

Start

Config. Setup Data=60H

Addr=X

Write

Lock, unlock Data=01H (Sector Lock)

Write 60H

(Configuration Setup)

or Lockdown

D0H(Sector Unlock)

2FH(Sector Lockdown)

Addr=Within sector to lock

Write

01H, D0H, or 2FH

Write

Read Status Data=70H

(Optional) Register

Read

(Optional)

Stanby

Addr=X

Status Register Register

Addr=X

Check Status Register

80H=no error

Write 70H

(Read Status Register)

Lock Command

Read Status Register

Sequence Error

(Optional)

30H=Lock Command

Sequence Error

Data=90H

1,1

SR.4, SR.5=

Write

Read

(Optional) Configuration Addr=X

0,0

Read

Sector Lock Sector Lock Status Data

Write 90H

(Read Configuration)

(Optional)

Status

Addr=Second addr of

sector

Stanby

Confirm Locking Change

on DQ1, DQ0 (See Sector

Locking State Table for

valid combinations.)

Read Sector Lock Status

No

Locking Change

Confirmed ?

Yes

Locking Change

Complete

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M5M29GB640VP

Figure 11. Protection Register Programming Flowchart

Bus

Command Comments

Start

Operation

Write

Protection

Program

Setup

Data=C0H

Write C0H

(Protection Reg. Program Setup)

Write

Read

Protection

Program

Data=Data to Program

Addr=Location to Program

Status Register DataToggle

CE or OE to Update Status

Register Data

Write Protect. Register

Address/Data

Read Status Register

Standby

Check SR.7

1=WSM Ready

No

SR.7=1 ?

Yes

0=WSM Busy

Protection Program operations can only be addressed

within the protection register address space. Addresses

outside the defined space will return an error.

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program

or after a sequence of program operations.

Write FFH after the last operation to reset device to

read array mode.

Full Status

Check if Desired

Program Ccomplete

FULL STATUS CHECK PROCEDURE

Read Status Register

Data(See Above)

Bus

Command

Comments

Operation

Standby

SR.1, SR.3, SR.4

0

1

0

1 VPP Low

1 Prot. Reg.

Prog. Error

1 Register

Locked:

1,1

VPP Range Error

SR.3, SR.4=

Standby

Stanby

1

0

Protection Register

programming Error

0,1

SR.1, SR.4=

Aborted

SR.3 MUST be cleared, if set during a program at-

tempt, before further attempts are allowed by theWrite

State Machine.

Attempted Program to

Locked Register Aborted

1,1

SR.1,3,4 are only cleared by the Clear Status Regis-

ter Command, in cases of multiple protection register

program operations before full status is checked.

If an error is detected, clear the status register before

attempting retry or other error recovery.

SR.1, SR.4=

Program Successful

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M5M29GB640VP

The single cycle Query command is valid only when the

device is in the Read mode, including Erase Suspend,

Program Suspend, Standby mode, and Read ID mode;

however, it is ignored otherwise.

8. QUERY COMMAND AND COMMON FLASH

INTERFACE (CFI) MODE

MX28F640C3T/B is capable of operating in the CFI mode.

This mode all the host system to determine the manu-

facturer of the device such as operating parameters and

configuration.Two commands are required in CFI mode.

Query command of CFI mode is placed first, then the

Reset command exits CFI mode. These are described

in Table X.

The Reset command exits from the CFI mode to the

Read mode, or Erase Suspend mode, Program Suspend

or read ID mode. The command is valid only when the

device is in the CFI mode.

Table 9-1. CFI mode: Identification Data Values

(All values in these tables are in hexadecimal)

Description

Addressh

Datah

0051

0052

0059

0003

0000

0035

0000

Query-unique ASCII string "QRY"

10

11

12

13

14

15

16

17

18

19

1A

Primary vendor command set and control interface ID code

Address for primary algorithm extended query table

Alternate vendor command set and control interface ID code (none)

Address for secondary algorithm extended query table (none)

Table 9-2. CFI Mode: System Interface Data Values

Description

Addressh

Datah

0027

0036

00B4

00C6

0005

0000

000A

0004

0000

0003

0000

VCC supply, minimum (2.7V)

1B

1C

1D

1E

1F

20

21

22

23

24

25

26

VCC supply, maximum (3.6V)

VPP supply, minimum (none)

VPP supply, maximum (none)

Typical timeout for single word/byte write (2^Nus)

Typical timeout for maximum size buffer write (2^Nus)

Typical timeout for individual block erase (2^Nms)

Typical timeout for full chip erase (2^Nms)

Maximum timeout for single word/byte write times (2^NX Typ)

Maximum timeout for maximum size buffer write times (2^NX Typ)

Maximum timeout for individual block erase times (2^NX Typ)

Maximum timeout for full chip erase times (not supported)

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M5M29GB640VP

Table 9-3. CFI Mode: Device Geometry Data Values

Description

Addressh

Datah

0001

0002

0000

0001

0004

0000

0002

Device size (2N bytes)

27

28

29

2A

2B

2C

2D

2E

2F

30

Flash device interface code (02=asynchronous x8/x16)

Maximum number of bytes in multi-byte write (not supported)

Number of erase block regions

Erase block region 1 information

[2E,2D] = # of blocks in region -1

[30, 2F] = size in multiples of 256-bytes

Table 9-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values

Description

Addressh

Datah

0050

0052

0049

0031

0030

66

Query-unique ASCII string "PRI"

35

36

37

38

39

3A

3B

3C

3D

Major version number, ASCII

Minor version number, ASCII

OptionalFeature&CommandSupport

bit 0 Chip Erase Supported (1=yes, 0=no)

bit 1 Suspend Erase Supported (1=yes, 0=no)

bit 2 Suspend Program Supported (1=yes, 0=no)

bit 3 Lock/Unlock Supported (1=yes, 0=no)

bit 4 Queued Erase Supported (1=yes, 0=no)

bits 5-31 revered for future use; undefined bits are "0"

Sector Lock Status

00

3F

40

03

00

Define which bits in the sector status Register section of the Query are

implemented.

bit 0 sector Lock Status Register Lock/Unlock bit (bit 0) active; (1=yes, 0=no)

bit 1 sector Lock Status Register Lock/Unlock bit (bit 1) active; (1=yes, 0=no)

Bits 2-15 reserved for future use. Undefined bits are 0.

VCC Logic Supply Optimum Program/Erase Voltage (highest performance)

bits 7-4 BCD value in volts

41

42

33

bits 3-0 BCD value in 100mV

VPP(Programming)SupplyOptimumProgram/EraseVoltage

bits 7-4 HEX value in volts

C0

bits 3-0 BCD value in 100mV

REV. 0.3, NOV. 21, 2002

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M5M29GB640VP

ORDER INFORMATION

PART NO.

ACCESS TIME

OPERATING

STANDBY

PACKAGE

(ns)

90

Current MAX.(mA)

Current MAX.(uA)

MX28F640C3TTC-90

MX28F640C3BTC-90

MX28F640C3TTC-12

MX28F640C3BTC-12

MX28F640C3TTI-90

MX28F640C3BTI-90

MX28F640C3TTI-12

MX28F640C3BTI-12

MX28F640C3TXAC-90

MX28F640C3BXAC-90

MX28F640C3TXAC-12

MX28F640C3BXAC-12

MX28F640C3TXAI-90

MX28F640C3BXAI-90

MX28F640C3TXAI-12

MX28F640C3BXAI-12

30

5

48 Pin TSOP

48 Ball CSP

90

120

90

120

90

120

90

120

REV. 0.3, NOV. 21, 2002

P/N:PM0900

43

M5M29GB640VP

PACKAGE INFORMATION

REV. 0.3, NOV. 21, 2002

P/N:PM0900

44


型号：	M5M29GB640C3TXAI-12
厂家：	ETC
描述：	3.3V ONLY FLASHMEMORY 仅3.3V FLASHMEMORY
文件：	总42页 (文件大小：590K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M5M29GB640C3TXAI-12 [ETC]

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