LVS32260D300300 [ETC]
Chip varistor provides high reliability on surface mounting; 片式压敏电阻提供了高可靠性表面贴装
| 型号： | LVS32260D300300 |
| 厂家： | 
ETC |
| 描述： | Chip varistor provides high reliability on surface mounting |
| 文件： | 总6页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Va ristor
DESCRIPTION
The LVS series is metal oxide based chip varistor for transient
voltage suppression. They have non-linear voltage-current
behavior, similar to zener diode. Multilayer structured varistor,
however, shows superiority in electrical reliability than zener
diode, since each grain exhibits small p-n junction. In addition,
LVS series shows better electrical properties such as high
clamping voltage and low leakage current.
FEATURES
APPLICATIONS
*Chip varistor provides high reliability on surface mounting
*Protection from transient voltage noise in all kinds of IC
*Protection from ESD, EFT and surge in power I/O port
*Replacement of zener diode
W
*Wide range of working voltage (V = 5.6V˜30V)
*Good clamping ratio and low leakage current
*Electroplating of Ni and solder gives higher solderability
*Wide operating temperature (-55˜125°C )
*Various capacitance is available
ORDERING INFORMATION
LVS 10 033 B 200 401
Capacitance
030 = 3pF
Series
LVS = Standard
300 = 30pF
301 = 300pF
LVSL = Low
Capacitance
Size
Clamping voltage
10 = 1005(0402)
16 = 1608(0603)
20 = 2012(0805)
32 = 3216(1206)
100 = 10V
300
= 30V
Transient energy
Z
A
B
C
D
E
F
G
H
I
=
=
=
=
=
=
=
=
=
=
=
=
0.005J
0.02J
0.05J
0.1J
0.2J
0.3J
0.4J
0.6J
0.8J
1.0J
1.3J
1.5J
Working voltage
056 = 5.6V
090 = 9.0V
260 = 26V
J
K
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1
Chip Va ristor
SPECIFICATIONS
Working
Breakdown
Voltage
(@ 1mA )
B
Clamping
Voltage
( 8/20µS)
C
Peak
Current
( 8/20µS)
P
Transient
Capacitance
Energy
Part No.
Voltage
(<25µA)
(@ 1 kHz)
(10/1000µS
)
W
T
E
Symbol
V (V)
V
(V)
V
(V)
I
(A)
(J)
C (pF)
1005(0402) size
W
B
C
P
T
Part No.
V (V)
V (V)
V
(V)
I
(A)
E
(J)
C (pF)
370
200
100
50
LVS10056B160...
LVS10090B200...
LVS10140B300...
LVS10180B400...
LVS10260B580...
5.6
9
7.2
10.8
16.8
21.5
30.9
˜
˜
˜
˜
˜
9.6
16
20
30
40
58
20
20
20
20
20
0.05
0.05
0.05
0.05
0.05
14.3
22.2
28.5
40.9
14
18
26
30
1608(0603) size
W
B
C
P
T
Part No.
V (V)
V (V)
V
(V)
I
(A)
E
(J)
C (pF)
1000
650
LVS16056C160...
LVS16090C200...
LVS16140C300...
LVS16180C400...
LVS16260C580...
LVS16300C650...
5.6
9
7.2
10.8
16.8
21.5
30.9
35.7
˜
˜
˜
˜
˜
˜
9.6
16
20
30
40
58
65
30
30
30
30
30
30
0.1
0.1
0.1
0.1
0.1
0.1
14.3
22.2
28.5
40.9
47.3
14
18
26
30
350
230
180
100
2012(0805) size
W
B
C
P
T
Part No.
V (V)
V (V)
V
(V)
I
(A)
E
(J)
C (pF)
3000
1300
800
LVS20056C160...
LVS20090C200...
LVS20140C300...
LVS20180C400...
LVS20260C580...
LVS20300C650...
5.6
9
7.2
10.8
16.8
21.5
30.9
35.7
˜
˜
˜
˜
˜
˜
9.6
16
20
30
40
58
65
40
40
35
35
35
35
0.1
0.1
0.1
0.1
0.1
0.1
14.3
22.2
28.5
40.9
47.3
14
18
26
30
450
300
200
3216(1206) size
W
B
C
P
T
Part No.
V (V)
V (V)
V
(V)
I
(A)
E
(J)
C (pF)
1800
1300
800
LVS32056C160...
LVS32090C200...
LVS32140C300...
LVS32180C400...
LVS32260C580...
LVS32300C650...
5.6
9
7.2˜9.6
16
20
30
40
58
65
40
40
40
35
35
35
35
150
0.1
0.1
0.1
0.1
0.1
0.1
0.4
10.8
˜
˜
˜
˜
˜
14.3
14
18
26
30
18
16.8
21.5
30.9
35.7
22.2
28.5
40.9
47.3
450
300
200
*
LVS32180F400...
21.5˜28.5
1500
* For Automotive Application : Withstand 24.5V DC for 5minutes
Low Capacitance Series
Part No.
Working Voltage
Breakdown Voltage
Clamping Voltage
Peak Current Transient Energy Capacitance
LVS10090C200...
LVS10140C300...
LVS10180C400...
LVS10260C580...
LVS10300C650...
9
10.8
16.8
21.5
30.9
35.7
˜14.3
˜22.2
˜28.5
˜40.9
˜47.3
20
30
40
58
65
40
35
35
35
35
0.1
0.1
0.1
0.1
0.1
1300
800
450
300
14
18
26
30
200
* 1MHz
W
V = Maximum DC voltage, that is applied continuously in the maximum operating temperature of the device.
B
V = Varistor voltage or normal voltage, that is measured at the applied current of 1mA.
C
V = Peak voltage appearing across the varistor when measured at the condition of specified pulsed current and waveform.
(8/20µS, 0.1J 2A, 0.05J 1A)
P
I = Surge current or peak current, the maximum current without causing device failure measured with specified waveform.( 8/20µS)
T
E = Maximum rated transient energy that is dissipated for a single current pulse at a specified impulse duration.( 10/1000µS)
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2
Chip Va ristor
RELIABILITY TEST METHOD
Item
Test Method
Soldering temperature : 260± 5°C
Duration of immersion : 10 ± 1sec.
Preheating : 150°C , 1min.
Criteria for judging
Visual : No mechanical damage
Resistance to Soldering
Heat
∆ V /VB<10%
B
At least 75% of the electrode must
be covered with new solder.
Solderability Test
Adhesion
Soldering temperature : 230 ± 5°C
Duration of immersion : 5± 1sec.
Preheating : 150°C , 1min.
The Force W is applied to DUT.
Visual : No mechanical damage
0805 : over 2.0Kgf
0603 : over 1.0Kgf
0402 : over 0.7Kgf
The middle part of substrate shall,
successively, be pressurized by means of the
pressurizing rod at a rate of about 1mm/sec.
Maintenance time : 5 sec.
Visual : No mechanical damage
Resistance to
Flexure of Substrate
Bending distane : 1mm
Dry Heat Test
Cold Test
Visual : No mechanical damage
Test temperature : 125 ± 2°C
Test duration : 1000+48hrs.
∆ V /VB <10%
B
After completion of the test, leaving the
sample under the standard conditions for 24¡ 2hrs.
Visual : No mechanical damage
Test temperature : -30± 2°C
∆ V /VB <10%
Test duration : 1000+48hrs.
B
After completion of the test, leaving the
sample under the standard conditions for 24+ 2hrs.
Damp Heat Test
(Steady State)
Test temperature : 40± 2°C
Visual : No mechanical damage
Test relative humidity : 90
˜
95RH%
∆ V /VB <10%
B
Test duration : 56days+24hrs.
After completion of the test, leaving the sample under
the standard conditions for 24± 2hrs.(IEC60068-2-3)
Thermal Shock
Test
Visual : No mechanical damage
∆ V /VB <10%
B
This cycle is repeated 50 times. After completion of the
test, leave the sample under standard condition for 24±
2hrs.
Visual : No mechanical damage
ESD Test
Test Voltage : 8 kV
∆ V /VB <15%
(Contact discharge)
Type of discharge : direct contact discharge
B
Number of test pulses : 20 times
Polarity : +/-
(IEC 61000-4-2)
ESD Test
Visual : No mechanical damage
Test Voltage : 15 kV
(Air Discharge)
∆ V /VB <15%
Type of discharge : air discharge
Number of test pulses : 20 times
Polarity : +/-
B
(IEC 61000-4-2)
High Temperature
Life Test
Visual : No mechanical damage
Temp. : 125± 2°C
∆ V /VB <10%
Duration : 1000
¡
48hrs.
B
dc max
Applied voltage : V
After completion of the test, leave the sample under
standard condition for 24± 2hrs.
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3
Chip Va ristor
CHARACTERISTIC CURVES
I-V Characteristics
B
Temperature vs. V
B
Typical Temperature Dependence of V
a
Temperature vs.
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Chip Va ristor
RELIABILITY TEST DATA
High Temperature Life Test
Cold Test
Thermal Shock Test
Resistance to Soldering Heat
ESD Test
Adhesion
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Chip Va ristor
APPLICATION FOR ESD
What is ESD ?
Protection Performance of Lattron is Varistor for ESD
It is a kind of transient voltage noise. The definition of transient
voltage is listed in IEC 61000-4 series, which describes the
immunity requirements and test methods for electrical and
electric equipments, subjected to ESD, EFT, and surge. Figure 1
is the waveform of ESD, defined in IEC 61000-4-2.
The performance of Lattron is varistor against ESD noise is
tested with the test circuit as shown in Picture 2.
Test procedure includes three different circuit configurations;
without varistor, with varistor at DUT position, and shorted circuit
at DUT position. The test results that had collected with digital
scope are shown in Picture 3.
The performance of ESD suppression with Lattron is varistor is
as good as that of short circuit.
Picture 2.
Picture 1.
Varistor vs. TVS Diode
ESD current has the rise time of sub-nanosecond, duration of
tens of nanosecond, and its amplitude reaches over 10KV. So,
the protecting device from ESD also needs fast response time.
TVS diode has a similar performance with that of LATTRON's
varistor, in terms of response time and handling capacity. Which,
however, shows inferiority in surge current, leakage current,
operating directionality, polarity, and miniaturization as shown in
the table.
®
LATTRON VARISTOR
TVS DIODE
Response time
ESD handling
capability
< 1ns
> 1ns
> Contact 8kV, 10 cycle
High in case of
low voltage spec.
Low especially in
high voltage spec.
Characteristics are
deteriorated from 25°C
Min. 1608 mm
Leakage current
Low in all spec.
High in all spec.
TEST INSTRUMENTS : TEKTRONIX TDS3054. MINIZAP
Surge current
Picture 3.
handling capability
Characteristics are
deteriorated over 80°C
Min. 0603 mm
Operating temp.
Size
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