LM7171AMWGFQML [ETC]
OP-AMP|SINGLE|BIPOLAR|SOP|10PIN|CERAMIC ;
| 型号： | LM7171AMWGFQML |
| 厂家： | 
ETC |
| 描述： | OP-AMP|SINGLE|BIPOLAR|SOP|10PIN|CERAMIC |
| 文件： | 总23页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROCIRCUIT DATA SHEET
Original Creation Date: 03/16/00
Last Update Date: 08/02/01
MNLM7171AM-X-RH REV 0C0
Last Major Revision Date: 03/16/00
VERY HIGH SPEED, HIGH OUTPUT CURRENT, VOLTAGE FEEDBACK
AMPLIFIER: ALSO AVAILABLE GUARANTEED TO 300K RAD(Si)
TESTED TO MIL-STD-883, METHOD 1019.5
General Description
The LM7171 is a high speed voltage feedback amplifier that has the slewing characteristic
of a current feedback amplifier; yet it can be used in all traditional voltage feedback
amplifier configurations. The LM7171 is stable for gains as low as + 2 or -1. It provides
a very high slew rate at 2000V/uS (Minimum) and a wide gain-bandwidth product of 170MHz
(Minimum) while consuming only 6.5mA of supply current. It is ideal for video and high
speed signal processing applications such as HDSL and pulse amplifiers. With 100mA output
current, the LM7171 can be used for video distribution, as a transformer driver, or as a
laser diode driver.
Operation on +15V power supplies allows for large signal swings and provides greater
dynamic range and signal-to-noise ratio. The LM7171 is ideal for ADC/DAC systems. In
addition, the LM7171 is specified for +5V operation for portable applications.
The LM7171 is built on National's advanced VIP(TM)III(Vertically integrated PNP)
complementary bipolar process.
Industry Part Number
NS Part Numbers
LM7171AM
LM7171AMJ-QML
LM7171AMJ-QMLV
LM7171AMJFQML
LM7171AMJFQMLV
LM7171AMW-QML
LM7171AMW-QMLV
LM7171AMWFQMLV
LM7171AMWG-QML
LM7171AMWG-QMLV
LM7171AMWGFQML
LM7171AMWGFQMLV
Prime Die
LM7171
Controlling Document
See Features Section
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Features
(Typical)
- Easy to use Voltage Feedback Topology
- Very High Slew Rate
2400V/us
200Mhz
220 Mhz
6.5 mA
85 dB
- Wide Unity-Gain Bandwidth
- -3dB Frequency @ Av = +2
- Low Supply Current
- High Open Loop Gain
- High Output Current
100 mA
- Specified for +15V and +5V operation
CONTROLLING DOCUMENTS:
LM7171AMJ-QML
LM7171AMJ-QMLV
LM7171AMJFQML
LM7171AMJFQMLV
LM7171AMW-QML
LM7171AMW-QMLV
LM7171AMWFQMLV
LM7171AMWG-QML
LM7171AMWG-QMLV
LM7171AMWGFQML
LM7171AMWGFQMLV
5962-9553601QPA
5962-9553601VPA
5962F9553601QPA
5962F9553601VPA
5962-9553601QHA
5962-9553601VHA
5962F9553601VHA
5962-9553601QXA
5962-9553601VXA
5962F9553601QXA
5962F9553601VXA
Applications
- HDSL and ADSL Drivers
- Multimedia Broadcast Systems
- Professional Video Cameras
- Video Amplifiers
- Copiers/Scanners/Fax
- HDTV Amplifiers
- Pulse Amplifiers and Peak Detectors
- CATV/Fiber Optics Signal Processing
APPLICATION NOTES:
PERFORMANCE DISCUSSION: The LM7171 is a very high speed, voltage feedback amplifier. It
consumes only 6.5mA supply current while providing a gain-bandwidth product of 170MHz
(Minimum) and a slew rate of 2000V/uS (Minumum). It also has other great features such as
low differential gain and phase and high output current.
The LM7171 is a true voltage feedback amplifier. Unlike current feedback amplifiers (CFAs)
with a low inverting input impedance and a high non-inverting input impedance, both inputs
of voltage feedback amplifiers (VFA's) have high impedance nodes. The low impedance
inverting input in CFA's and a feedback capacitor create an additional pole that will lead
to instability. As a result, CFA's cannot be used in traditional op amp circuits such as
photodiode amplifiers, I-to-V converters and integrators, where a feedback capacitor is
required.
2
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Applications (Continued)
CIRCUIT OPERATION: The class AB input stage in the LM7171 is fully symmetrical and has a
similar slewing characteristic to the current feedback amplifiers. In the LM7171
Simplified Schematic, (see AN00006) Q1 through Q4 form the equivalent of the current
feedback input buffer, RE the equivalent of the feedback resistor, and stage A buffers the
inverting input. The triple-buffered output stage isolates the gain stage from the load to
provide low output impedance.
SLEW RATE CHARACTERISTIC: The slew rate of LM7171 is determined by the current available
to charge and discharge an internal high impedance node capacitor. This current is the
differential input voltage divided by the total degeneration resistor RE. Therefore, the
slew rate is proportional to the input voltage level, and the higher slew rates are
achievable in the lower gain configurations. See the LM7171 Commercial Data Book for slew
rate Vs input voltage level curve.
When a very fast, large signal, pulse is applied to the input of an amplifier, some
overshoot or undershoot occurs. By placing an external resistor such as 1K Ohm in series
with the input of the LM7171, the bandwidth is reduced to help lower the overshoot.
SLEW RATE LIMITATION: If the amplifier's input signal has too large of an amplitude at too
high of a frequency, the amplifier is said to be slew rate limited; this can cause ringing
in time domain, and peaking in frequency domain, at the output of the amplifier.
In the Commercial Data Book "Typical Performance Characteristics" section, there are
several curves of Av = +2 and Av = +4 versus input power levels. For the Av = +4 curves,
no peaking is present and the LM7171 responds identically to the different input power
levels of 30 mV, 100 mV and 300mV.
For the Av = +2 curves, slight peaking occurs. This peaking at high frequency (>100MHz) is
caused by a large input signal at high enough frequency, that it exceeds the amplifier's
slew rate. The peaking in frequency response does not limit the pulse response in time
domain. The LM7171 is stable with noise gain of > +2.
LAYOUT CONSIDERATION: PRINTED CIRCUIT BOARDS AND HIGH SPEED OP AMPS: There are many things
to consider when designing PC boards for high speed op amps. Without proper caution, it is
very easy to have excessive ringing, oscillation, and other degraded AC performance in
high speed circuits. As a rule, the signal traces should be short and wide to provide low
inductance and low impedance paths. Any unused board space must be grounded to reduce
stray signal pickup. Critical components should also be grounded at a common point to
eliminate voltage drop. Sockets add capacitance to the board and can affect high frequency
performance. It is better to solder the amplifier directly into the PC board without using
any socket.
USING PROBES: Active (FET) probes are ideal for taking high frequency measurements because
they have wide bandwidth, high input impedance, and low input capacitance. However, the
probe ground leads provide a long ground loop that will produce errors in measurement.
Instead, the probes can be grounded directly by removing the ground leads and probe
jackets and using scope probe jacks.
COMPONENT SELECTION & FEEDBACK RESISTOR: It is important in high speed applications to
keep all component leads short. For discrete components, choose carbon composition-type
resistors and mica-type capacitors. Surface mount components are preferred over discrete
components for minimum inductive effect.
Large values of feedback resistors can couple with parasitic capacitance and cause
undesirable effects such as ringing or oscillation in high speed amplifiers. For LM7171, a
feedback resistor of 510 Ohms gives optimal performance.
COMPENSATION FOR INPUT CAPACITANCE: The combinations of an amplfier's input capacitance
with the gain setting resistors adds a pole that can cause peaking or oscillation. To
solve this problem, a feedback capacitor with a value Cf>(Rg X Cin)/Rf can be used to
cancel that pole. For LM7171, a feedback capacitor of 2pF is recommended. AN00003
illustrates the compensation circuit.
POWER SUPPLY BYPASSING: Bypassing the power supply is necessary to maintain low power
supply impedance across the frequency spectrum. Both positive and negative power supplies
should be bypassed individually by placing 0.01uF ceramic capacitors directly to the power
supply pins and 2.2uF tantalum capacitors close to the power supply pins. See AN00004.
TERMINATION: In high frequency applications, reflection occur if signals are not properly
terminated. Figure 3, in the Commercial Data Book, shows a properly terminated signal,
while Figure 4, in the Commercial Data Book, shows an improperly terminated signal.
To minimize reflection, coaxial cable with matching characteristic impedance to the signal
source should be used. The other end of the cable should be terminated with the same value
terminator or resistor. For the commonly used cables, RG59 has 75 Ohm characteristic
impedance, and RG58 has 50 Ohm characteristic impedance.
3
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Applications (Continued)
DRIVING CAPACITIVE LOADS: Amplifiers driving capactive loads can oscillate or have ringing
at the output. To eliminate oscillation or reduce ringing, an isolation resistor can be
placed as shown on AN00005. The combination of the isolation resistor and the load
capacitor forms a pole to increase stability by adding more phase margin to the overall
system. The desired performance depends upon the value of the isolation resistor; the
bigger the isolation resistor, the more damped the pulse response becomes. For LM7171, a
50 Ohm isolation resistor is recommended for initial evaluation. Figure 6, in the
Commercial Data Book, shows the LM7171 driving a 150pF load with the 50 Ohm isolation
resistor.
POWER DISSIPATION: The maximum power allowed to dissipate in a device is defined as: Pd =
[Tj(max) - TA]/ThetaJA, where Pd (is the power dissipation in a device), Tj(max) (is the
maximum junction temperature), TA (is the ambient temperature), ThetaJA (is the thermal
resistance of a particular package).
For example, for the LM7171 in a J-8 package, the maximum power dissipation at 25 C
ambient temperature is 730mW.
The total power dissipation in a device can be calculated as: Pd = Pq + Pl
Pq is the quiescent power dissipated in a device with no load connected at the output. Pl
is the power dissipated in the device with a load connected at the output; it is not the
power dissipated by the load.
Furthermore, Pq = supply current x total supply voltage with no load, Pl = output current
x (voltage difference between supply voltage and output voltage of the same side of supply
voltage).
For example, the total power dissipated by the LM7171 with Vs = <15V and output voltage of
10V into 1K Ohm is:
Pd = Pq + Pl
= (6.5mA)x(30V)+(10mA)x(15V - 10V)
= 195mW + 50mW
= 245mW
4
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (V+ - V-)
36V
Differential Input Voltage
(Note 6)
+10V
Maximum Junction Temperature
150 C
Maximum Power Dissipation
(Note 2, 3)
730mW
Output Short Circuit to Ground
(Note 4)
Continuous
Operating Temperature Range
-55 C < Ta < +125 C
Thermal Resistance
(Note 7)
ThetaJA
8-Pin CERAMIC DIP
(Still Air)
106 C/W
53 C/W
182 C/W
105 C/W
182 C/W
105 C/W
(500LF/Min Air flow)
(Still Air)
10-Pin CERPAK
(500LF/Min Air flow)
10-Pin CERAMIC SOIC (Still Air)
(500LF/Min Air flow)
ThetaJC
(Note 3)
8-Pin CERAMIC DIP
10-Pin CERPAK
10-Pin CERAMIC SOIC
3 C/W
5 C/W
5 C/W
Package Weight
(Typical)
8-Pin CERAMIC DIP
10-Pin CERPAK
965mg
235mg
230mg
10-Pin CERAMIC SOIC
Storage Temperature Range
-65 C < Ta < +150 C
3000V
ESD Tolerance
(Note 5)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
5
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
(Continued)
Note 3: The package material for these devices allows much improved heat transfer over our
standard ceramic packages. In order to take full advantage of this improved heat
transfer, heat sinking must be provided between the package base (directly beneath
the die), and either metal traces on, or thermal vias through, the printed circuit
board. Without this additional heat sinking, device power dissipation must be
calculated using junction-to-ambient, rather than junction-to-case,
thermal resistance. It must not be assumed that the device leads will provide
substantial heat transfer out of the package, since the thermal resistance of the
leadframe material is very poor, relative to the material of the package base. The
stated junction-to-case thermal resistance is for the package material only, and does
not account for the additional thermal resistance between the package base and the
printed circuit board. The user must determine the value of the additional thermal
resistance and must combine this with the stated value for the package, to calculate
the total allowed power dissipation for the device.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can result in exceeding the maximum allowed
junction temperature of 150 C.
Note 5: Human body model, 1.5k Ohms in series with 100pF.
Note 6: Input differential voltage is measured at Vs = +15V.
Note 7: All numbers apply for packages soldered directly into a PC board.
Recommended Operating Conditions
(Note 1)
Supply Voltage
5.5V < V+ < 36V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
6
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Electrical Characteristics
DC PARAMETERS: +15V (See NOTE 6)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V+ = +15V, V- = -15V, Vcm = 0V, and Rl > 1M Ohm
PIN-
NAME
SUB-
SYMBOL
Vio
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Input Offset
Voltage
1
7
mV
mV
1
2, 3
1
+Iib
-Iib
Iio
Input Bias
Current
10
12
10
12
4
uA
uA
uA
uA
uA
uA
dB
dB
dB
dB
dB
dB
dB
dB
V
2, 3
1
Input Bias
Current
2, 3
1
Input Offset
Current
6
2, 3
1
CMRR
PSRR
Av
Common Mode
Rejection Ratio
Vcm = +10V
85
70
2, 3
1
Power Supply
Rejection Ratio
Vs = +15V to +5V
85
80
2, 3
1
Large Signal
Voltage Gain
Rl = 1K Ohm, Vout = +5V
Rl = 100 Ohms, Vout = +5V
Rl = 1K Ohm
1
1
1
1
80
75
2, 3
1
75
70
2, 3
1
Vo
Output Swing
13
-13
12.7
10.5
9.5
105
95
-12.7 V
2, 3
1
Rl = 100 Ohms
-9.5
-9
V
V
2, 3
1
Output Current
(Open Loop)
Sourcing, Rl = 100 Ohms
Sinking, Rl = 100 Ohms
2
2
2
2
mA
mA
mA
mA
mA
mA
2, 3
1
-95
-90
8.5
9.5
2, 3
1
Is
Supply Current
2, 3
7
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Electrical Characteristics
AC PARAMETERS: +15V (See NOTE 6)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: V+ = +15V, V- = -15V, Vcm = 0V
PIN-
NAME
SUB-
SYMBOL
PARAMETER
Slew Rate
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Sr
Gbw
Av = 2, Vin = +2.5V, 3nS Rise & Fall
time
3, 4
2000
V/uS 4
MHz 4
Unity-Gain
Bandwidth
5
170
DC PARAMETERS: +5V (See NOTE 6)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tj = 25 C, V+ = +5V, V- = -5V, Vcm = 0V, and Rl > 1M Ohm
Vio
Input Offset
Voltage
1.5
mV
mV
uA
uA
uA
uA
uA
uA
dB
dB
dB
dB
dB
dB
V
1
7
2, 3
1
+Iib
-Iib
Iio
Input Bias
Current
10
12
10
12
4
2, 3
1
Input Bias
Current
2, 3
1
Input Offset
Current
6
2, 3
1
CMRR
Av
Common Mode
Rejection Ratio
Vcm = +2.5V
80
70
2, 3
1
Large Signal
Voltage Gain
Rl = 1K Ohm, Vout = +1V
Rl = 100 Ohms, Vout = +1V
Rl = 1K Ohm
1
1
1
1
75
70
2, 3
1
72
67
2, 3
1
Vo
Output Swing
3.2
3.0
2.9
2.8
29
-3.2
-3.0
-2.9
V
2, 3
1
Rl = 100 Ohms
V
-2.75 V
mA
2, 3
1
Output Current
(Open Loop)
Sourcing, Rl = 100 Ohms
Sinking, Rl = 100 Ohms
2
2
2
2
28
mA
mA
2, 3
1
-29
-27.5 mA
2, 3
1
Is
Supply Current
8
9
mA
mA
2, 3
8
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Electrical Characteristics
DC PARAMETERS: +15V, DRIFT VALUES (See NOTE 6)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tj = 25 C, V+ = +15V, V- = -15V, Vcm = 0V, and Rl > 1M Ohm.
and QMLV devices at Group B, subgroup 5 only."
"Delta calculations performed on JAN S
PIN-
NAME
SUB-
SYMBOL
Vio
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
GROUPS
Input Offset
Voltage
-250
250
uV
nA
nA
1
1
1
+Ibias
-Ibias
Input Bias
Current
-500
-500
500
500
Input Bias
Current
DC PARAMETERS: +5V, DRIFT VALUES (See NOTE 6)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tj = 25 C, V+ = +5V, V- = -5V, Vcm = 0V, and Rl > 1M Ohm.
QMLV devices at Group B, subgroup 5 only."
"Delta calculations performed on JAN S and
Vio
Input Offset
Voltage
-250
-500
-500
250
500
500
uV
nA
nA
1
1
1
+Ibias
-Ibias
Input Bias
Current
Input Bias
Current
Note 1: Large signal voltage gain is the total output swing divided by the input signal
required to produce that swing. For Vs = +15V, Vout = +5V. For Vs = +5V, Vout = +1V.
Note 2: The open loop output current is guaranteed, by the measurement of the open loop
output voltage swing, using 100 Ohms output load.
Note 3: See AN00001 for Sr test circuit.
Note 4: Slew Rate measured between +4V.
Note 5: See AN00002 for Gbw test circuit.
Note 6: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate
enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5
9
MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
05885HRA4
06344HRA1
AN00001A
AN00002A
AN00003A
AN00004A
AN00005A
AN00006A
J08ARL
CERDIP (J), 8 LEAD (B/I CKT)
CERAMIC SOIC (WG, W), 10 LEAD (B/I CKT)
SLEWRATE TEST CKT
CBW TEST CKT
COMPENSATING FOR INPUT CAPACITANCE
POWER SUPPLY BYPASSING
ISOLATION RESISTOR TO DRIVE CAPACITIVE LOAD
SIMPLIFIED SCHEMATIC DIAGRAM
CERDIP (J), 8 LEAD (P/P DWG)
CERDIP (J), 8 LEAD (PIN OUT)
CERAMIC SOIC (WG), 10 LEAD (PINOUT)
CERPACK (W), 10 LEAD (PINOUT)
CERPACK (W), 10 LEAD (P/P DWG)
CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
P000029B
P000157A
P000170A
W10ARG
WG10ARC
See attached graphics following this page.
10
1
2
3
4
5
10
9
NC
IN-
NC
V+
NC
NC
8
V
7
OUTPUT
IN+
V-
NC
6
LM7171AMWG
10 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000157A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
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MICROCIRCUIT DATA SHEET
MNLM7171AM-X-RH REV 0C0
Revision History
Rev ECN # Rel Date Originator Changes
0A0
M0003645 08/31/00
Rose Malone
Initial MDS Release: MNLM7171AM-X-RH, Rev. 0A0
0B0
M0003729 08/02/01
Rose Malone
Update MDS: MNLM7171AM-X-RH, Rev. 0A0 to
MNLM7171AM-X-RH, Rev. 0B0. Changed Main Table and
Features Section reference to Rad Hard NS Part Numbers
and 5962 SMD Drawings for J Pkg and WG Pkg. Changed
from RQML, RQMLV, 5962R9553601QPA, VPA, QXA, VXA to
FQML, FQMLV, 5962F9553601QPA, VPA, QXA, VXA. Rad Hard
Level 100K to 300K.
0C0
M0003819 08/02/01
Rose Malone
Updated MDS: MNLM7171AM-X-RH, Rev. 0B0 to
MNLM7171AM-X-RH, Rev. 0C0. Added LM7171AMWFQMLV and
SMD reference to Main Table and Features Section.
11
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