JANTX2N2484UB [ETC]
BJT ; BJT\n
| 型号： | JANTX2N2484UB |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总19页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 15 May 2002.
INCH-POUND
MIL-PRF-19500/376F
15 February 2002
SUPERSEDING
MIL-PRF-19500/376E
31 August 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
PT (1)
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJA
TA = +25°C
mW
V dc
V dc
V dc
mA dc
°C
°C/W
2N2484
2N2484UA
2N2484UB
360
360
360
60
60
60
6
6
6
60
60
60
50
50
50
-65 to +200
-65 to +200
-65 to +200
325
325
325
(1) Derate linearly at 2.06 mW/°C above TA = +25°C.
1.4 Primary electrical characteristics.
hfe
Cobo
|hfe|2
VCE(sat) (1)
Limits
VCE = 5 V dc
IC = 1 mA dc
f = 1 kHz
IE = 0
VCB = 5 V dc
100 kHz ≤ f ≤ 1 MHz
IC = 1.0 mA dc
IB = 0.1 mA dc
IC = 500 µA dc
VCE = 5 V dc
f = 30 MHz
pF
V dc
0.3
Min
Max
250
900
2.0
7.0
5.0
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/376F
Dimensions
Inches Millimeters
Symbol
Note
Min
Max
.195
.210
.230
Min
4.52
4.32
5.31
Max
4.95
5.33
5.84
CD
CH
HD
LC
LD
LL
.178
.170
.209
.100 TP
2.54 TP
6
7,8
7,8
.016
.500
.021
.750
0.41
12.7
0
0.53
19.05
LU
L1
L2
P
.016
.019
.050
0.41
0.48
1.27
7,8
7,8
7,8
.250
.100
6.35
2.54
Q
.040
.048
.046
.010
0.86
1.22
1.17
0.25
5
3,4
3
10
6
TL
TW
r
.028
.036
0.71
0.91
α
45° TP
45° TP
NOTES:
1.
2.
3.
4.
5.
6.
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall
be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition
(MMC) relative to tab at MMC.
7.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL
minimum. Diameter is uncontrolled in L1 and beyond LL minimum.
All three leads.
8.
9.
The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18).
2
MIL-PRF-19500/376F
Dimensions
Millimeters
Symbol
Inches
Min
.061
.029
.022
Note
3
Max
.075
.041
.028
Min
1.55
0.74
0.56
Max
1.90
1.04
0.71
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
L3
.075 REF
1.91 REF
.006
.145
.045
.022
.155
.055
0.15
3.68
1.14
0.56
3.93
1.39
5
.0375 BSC
.952 BSC
.155
.225
.225
.048
.088
.007
3.93
5.71
5.71
1.22
2.23
0.18
.215
5.46
.032
.072
.003
0.81
1.83
0.08
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on
the drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on
its surface. Measurement of these dimensions may be made prior to solder dipping.
6. Lead 4 = no connection.
FIGURE 2. Physical dimensions, surface mount (2N2484UA).
3
MIL-PRF-19500/376F
Ltr
Dimensions
Millimeters
Min.
Notes
Inches
Min.
Max.
.056
.035
.024
.024
.024
.108
.079
.039
.108
.128
.128
.038
.038
Max.
1.42
0.89
0.61
0.61
0.61
2.74
2.01
0.99
2.74
3.25
3.25
0.96
0.96
A
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
0.97
0.43
0.41
0.41
0.41
2.41
1.81
0.89
2.41
2.82
A1
B1
B2
B3
D
D1
D2
D3
E
3
3
3
E3
L1
L2
.022
.022
0.56
0.56
4
4
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions B2 and B3 are identical to B1
4. Dimension L2 is identical to L1.
FIGURE 3. Physical dimensions, surface mount (2N2484UB).
4
MIL-PRF-19500/376F
A- version
NOTES:
1.
2.
3.
4.
Die size:
.015 (0.381 mm) x .019 inch (0.421 mm) ± .001 inch (0.025 mm).
.010 (0.254 mm) ± .0015 inch (0.038 mm).
Aluminum 15,000 Å minimum, 18,000 Å nominal.
A. Gold 2,500 Å minimum, 3,000 Å nominal.
B. Eutectic Mount – No Gold.
Die thickness:
Top metal:
Back metal:
5.
6.
7.
8.
Backside:
Bonding pad:
Passivation:
Collector.
B = .003 inch (0.076 mm), E = .004 inch (0.102 mm)diameter.
Si3N4 (Silicon Nitride) 2,000 Å min, 2200 Å nom.
Metric equivalents are given for general information only.
FIGURE 4. Physical dimensions, JANHC and JANKC die, A - version.
5
MIL-PRF-19500/376F
B - version
NOTES:
1. Die size:
.018 (0.056 mm) x .018 inch (0.056 mm).
.008 (0.203 mm) ± .0016 inch (0.401 mm).
.0025 inch (0.064 mm) diameter.
.003 inch (0.076 mm) diameter.
Gold, 6,500 ± 1950 Å.
Aluminum, 19,500 ± 2500 Å.
Collector.
SiO2, 7,500 ± 1,500 Å.
2. Die thickness:
3. Base pad:
4. Emitter pad:
5. Back metal:
6. Top metal:
7. Back side:
8. Glassivation:
9. Metric equivalents are given for general information only.
FIGURE 5. Physical dimensions, JANHC and JANKC die, B - version.
6
MIL-PRF-19500/376F
1.4 Primary electrical characteristics.
NF
hFE2
hFE5
IC = 10 µA dc, VCE = 5 V dc
Rg = 10 kΩ
f = 100 Hz
f = 1000 Hz
f = 10 kHz
VCE = 5 V dc
IC = 10 µA dc
VCE = 5 V dc
IC = 1 mA dc
dB
dB
dB
2
Min
Max
200
500
250
800
7.5
3
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
7
MIL-PRF-19500/376F
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500,
and herein.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N"
prefix can also be omitted.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.4 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein must be performed by the first inspection lot of this
revision to maintain qualification.
8
MIL-PRF-19500/376F
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table
IV of
MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance, method 3131 of
MIL-STD-750.
Thermal impedance, method 3131 of
MIL-STD-750.
9
I
CBO2, hFE4
48 hours minimum
CBO2; hFE4
Not applicable
48 hours minimum
ICBO2 ,hFE4
10
11
I
;
∆ICBO2 = 100 percent of initial value or 2 nA
dc, whichever is greater.
∆hFE4 = ±15 percent
12
13
See 4.3.2
240 hours minimum
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or 2 nA
dc, whichever is greater;
∆hFE4 = ±15 percent
See 4.3.2
80 hours minimum
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or 2
nA dc, whichever is greater;
∆hFE4 = ±25 percent
* 4.3.1 Screening (JANHC and JANKC). Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
* 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 to 30 V dc, PD = 360 mW, no
heat sink or forced air cooling on the devices shall be permitted.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be
in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with table III herein. See
4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements
for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup
2 herein. Delta requirements shall be after each step and shall be in accordance with table III herein.
9
MIL-PRF-19500/376F
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4
B5
1037
1027
VCB = 10 V dc.
VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table VIa,
adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours, VCB = 10 -30 V dc, TJ = 150°C min.,
external heating of the device under test to achieve TJ = +150°C minimum is allowed
provided that a minimum of 75 percent of rated power is dissipated. No heat sink or forced-
air cooling on the devices shall be permitted. n = 45 devices, c = 0.
2
3
1039
1032
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2
herein. Delta requirements shall be in accordance with table III herein.
10
MIL-PRF-19500/376F
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2
C6
2036
1026
Test condition E (not applicable to UA and UB suffix devices).
1,000 hours at VCB = 10 - 30 V dc; power shall be applied to achieve TJ = +150°C
minimum and a minimum power dissipation PD = 75 percent of maximum rated PT as
defined in 1.3 herein.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2
C5
C6
2036
3131
Test condition E (not applicable to UA and UB suffix devices).
See 1.3.
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
* 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table II herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in
accordance with the applicable steps of table III.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
11
MIL-PRF-19500/376F
TABLE I. Group A inspection.
MIL-STD-750
Conditions
Symbol
Limit
Inspection 1/
Min
Max
Unit
Method
2071
Subgroup 1 2/
Visual and mechanical
examination 3/
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents 3/ 4/
5/
n = 15 devices, c = 0
Temperature cycling 3/ 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical measurements 4/
Bond strength 3/ 4/
Group A, subgroup 2
2037
Precondition TA = +250°C at
t = 24 hrs or TA = 300°C at
t = 2 hrs; n = 11 wires, c = 0
Subgroup 2
Collector to emitter
breakdown voltage
3011
3036
Bias condition D; IC = 10 mA dc
pulsed (see 4.5.1)
V(BR)CEO
60
V dc
Collector to base cutoff
current
Bias condition D; VCB = 60 V dc
ICBO1
10
µA dc
Emitter to base cutoff current
3061
3036
Bias condition D; VEB = 6 V dc
Bias condition D; VCB = 45 V dc
IEBO1
ICBO2
10
5
µA dc
Collector to base cutoff
current
nA dc
Collector to emitter cutoff
current
3041
Bias condition D; VCE = 5 V dc
ICEO
2
nA dc
Emitter to base cutoff current
3061
3041
Bias condition D; VEB = 5 V dc
Bias condition C; VCE = 45 V dc
IEBO2
ICES
2
5
nA dc
nA dc
Collector to emitter cutoff
current
Forward-current transfer ratio
3076
hFE1
45
VCE = 5 V dc; IC = 1 µA dc
See footnote at end of table.
12
MIL-PRF-19500/376F
TABLE I. Group A inspection - Continued.
MIL-STD-750
Conditions
Symbol
Limit
Inspection 1/
Min
Max
Unit
Method
Subgroup 2 - continued.
Forward-current transfer ratio
Forward-current transfer ratio
Forward-current transfer ratio
Forward-current transfer ratio
Forward-current transfer ratio
3076
3076
3076
3076
3076
hFE2
hFE3
hFE4
hFE5
hFE6
200
225
250
250
225
500
675
800
800
800
VCE = 5 V dc; IC = 10 µA dc
VCE = 5 V dc; IC = 100 µA dc
VCE = 5 V dc; IC = 500 µA dc
VCE = 5 V dc; IC = 1 mA dc
VCE = 5 V dc; IC = 10 mA dc
pulsed (see 4.5.1)
Collector to emitter voltage
(saturated)
3071
3066
VCE(sat)
0.3
0.7
V dc
V dc
IC = 1.0 mA dc; IB = 100 µA dc
Base emitter voltage
(nonsaturated)
Test condition B; VCE = 5 V dc;
IC = 100 µA dc
VBE(ON)
0.5
Subgroup 3
High-temperature operation
TA = +150°C
Collector to base cutoff
current
3036
Bias condition D; VCB = 45 V dc
ICBO3
10
µA dc
Low-temperature operation
Forward-current transfer ratio
Subgroup 4
TA = -55°C
3076
3306
3306
hFE7
|hfe|1
|hfe|2
35
3.0
2.0
VCE = 5 V dc; IC = 10 µA dc
Magnitude of common emitter
small-signal short-circuit
forward-current transfer ratio
VCE = 5 V dc; IC = 50 µA dc;
f = 5 MHz
Magnitude of common emitter
small-signal short-circuit
7.0
40
VCE = 5 V dc; IC = 500 µA dc;
f = 30 MHz
forward- current transfer ratio
Small-signal open-circuit
output admittance
3216
3211
3201
VCE = 5 V dc; IC = 1.0 mA dc;
f = 1 kHz
hoe
hre
hie
µmhos
Small-signal open- circuit
reverse-voltage transfer ratio
VCE = 5 V dc; IC = 1.0 mA dc;
f = 1 kHz
8.0 x
10-4
Small-signal short- circuit
input impedance
VCE = 5 V dc; IC = 1 mA dc;
f = 1 kHz
3.5
24
kΩ
See footnote at end of table.
13
MIL-PRF-19500/376F
TABLE I. Group A inspection - Continued.
MIL-STD-750
Conditions
Symbol
Limit
Inspection 1/
Min
250
Max
Unit
Method
Subgroup 4 - continued.
Small-signal short- circuit
forward current transfer ratio
3206
3236
3240
3246
3246
3246
3246
VCE = 5 V dc; IC = 1 mA dc;
f = 1 kHz
hfe
900
5.0
6.0
7.5
3
Open circuit output
capacitance
VCB = 5 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
Cibo
NF1
NF2
NF3
NF4
pF
pF
dB
dB
dB
dB
Input capacitance (output
open-circuited)
VEB = 0.5 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
Noise figure
f = 100 Hz; VCE = 5 V dc; IC = 10
µA dc; Rg = 10 kΩ;
Noise figure
f = 1 kHz; VCE = 5 V dc; IC = 10
µA dc; Rg = 10 kΩ;
Noise figure
f = 10 kHz; VCE = 5 V dc; IC = 10
µA dc; Rg = 10 kΩ;
2
Noise figure (wideband)
Noise bandwidth = 10 Hz to 15.7
kHz; VCE = 5 V dc; IC = 10 µA
dc; Rg = 10 kΩ;
3
Subgroups 5 and 6
Not applicable
Subgroup 7 4/
Decap internal visual (design
verification)
2075
n = 1 device, c = 0
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A
failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun
upon submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
14
MIL-PRF-19500/376F
* TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See group A, subgroup 2 and table III herein.
45 devices
c = 0
Intermittent life
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
Subgroups 3 through 7
Not applicable
See group A, subgroup 2 and table III herein.
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V
Condition B for devices ≤ 400 V
15
MIL-PRF-19500/376F
* TABLE III. Groups B and C delta measurements. 1/ 2/ 3/ 4/
Step
1
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3076
5/
Forward-current transfer
ratio
VCE = 5 V dc; IC = 500 µA ∆hFE4
dc; pulsed see 4.5.1
±25 percent change from
initial recorded reading
2.
Collector to emitter
voltage (saturated)
3071
3041
IC = 1.0 mA dc; IB = 100
µA dc
∆VCE(sat) ±50 mV dc change from
5/
previously measured value.
3.
Collector to emitter cutoff
current
Bias condition C;
VCE = 45 V dc
100 percent of initial value
or 2 nA dc, whichever is
greater.
∆ICES
5/
1/ The delta measurements for group B, table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table III herein, step 2.
b. Subgroup 5, see table III herein, steps 1 and 3.
2/ The delta measurements for 4.4.2.2 herein (group B, JAN, JANTX, and JANTXV) are as follows: All steps of
table III shall be performed after each step in 4.4.2.2 herein.
3/ The delta measurements for group C, table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table III
herein, steps 1 and 3 for JANS, step 1 for JAN, JANTX, and JANTXV.
4/ The delta measurements for group E, table IX of MIL-PRF-19500 are as follows: Subgroups 1 and 2, see
table III herein, all steps.
5/ Devices which exceed the group A limits for this test shall not be accepted.
16
MIL-PRF-19500/376F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Lead formation and finish may be specified (see 3.4.1).
d. Type designation and product assurance level.
e. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
* 6.4 Suppliers of JANHC die. The qualified JANHC suppliers with the applicable letter version (example
JANHCA2N2484) will be identified on the QML.
JANC ordering information
PIN
Manufacturer
43611
34156
2N2484
JANHCA2N2484
JANKCA2N2484
JANHCB2N2484
JANKCB2N2484
* 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
17
MIL-PRF-19500/376F
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2497)
Review activities:
Army - AR, MI, SM
Navy - AS, MC, SH
Air Force - 19
18
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/376F
2. DOCUMENT DATE
15 February 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN,
JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
a. Point of Contact
Alan Barone
Commercial
614-692-0510
DSN
850-0510
FAX
614-692-6939
EMAIL
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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