ISL84523IR-T [ETC]

Analog Switch ; 模拟开关\n
ISL84523IR-T
型号: ISL84523IR-T
厂家: ETC    ETC
描述:

Analog Switch
模拟开关\n

开关
文件: 总14页 (文件大小:817K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISL84521, ISL84522, ISL84523  
®
Data Sheet  
September 2002  
FN6031  
Low-Voltage, Single and Dual Supply,  
Quad SPST, Analog Switches  
Features  
• Drop-in Replacements for MAX4521 - MAX4523  
• Four Separately Controlled SPST Switches  
• Pin Compatible with DG411/DG412/DG413  
The Intersil ISL84521–ISL84523 devices are CMOS,  
precision, quad analog switches designed to operate from a  
single +2V to +12V supply or from a ±2V to ±6V supply.  
Targeted applications include battery powered equipment that  
benefit from the devices’ low power consumption (<1µW), low  
leakage currents (1nA max), and fast switching speeds  
• ON Resistance (R  
Max.) . . . . . . . . . . . . . . . . . . . 100Ω  
Matching Between Channels. . . . . . . . . . . . . . . . . .<1Ω  
ON  
• R  
ON  
(t  
= 45ns, t  
= 15ns). A12maximum R flatness  
• Low Power Consumption (P ). . . . . . . . . . . . . . . . . . . .<1µW  
ON  
OFF  
ON  
D
ensures signal fidelity, while channel-to-channel mismatch is  
guaranteed to be less than 4. The 3mm x 3mm Quad No-  
Lead Flatpack (QFN) package alleviates board space  
limitations, making this newest line of low-voltage switches an  
ideal solution.  
• Low Leakage Current (Max at 85oC) . . . . . . . . . . . . 10nA  
• Fast Switching Action  
- t  
- t  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45ns  
ON  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns  
OFF  
• Minimum 2000V ESD Protection per Method 3015.7  
• TTL, CMOS Compatible  
The ISL84521/ISL84522/ISL84523 are quad single-pole/  
single-throw (SPST) devices. The ISL84521 has four normally  
closed (NC) switches; the ISL84522 has four normally open  
(NO) switches; the ISL84523 has two NO and two NC  
switches and can be used as a dual SPDT, or a dual 2:1  
multiplexer.  
Applications  
• Battery Powered, Handheld, and Portable Equipment  
- Cellular/Mobile Phones  
Table 1 summarizes the performance of this family. For higher  
performance, pin compatible versions, see the ISL43140-42  
data sheet.  
- Pagers  
- Laptops, Notebooks, Palmtops  
• Communications Systems  
- Military Radios  
TABLE 1. FEATURES AT A GLANCE  
- RF “Tee” Switches  
ISL84521  
4
ISL84522  
4
ISL84523  
4
• Test Equipment  
- Ultrasound  
Number of Switches  
Configuration  
All NC  
65Ω  
All NO  
65Ω  
2 NC / 2 NO  
65Ω  
- Electrocardiograph  
±5V R  
• Heads-Up Displays  
ON  
±5V t  
/ t  
ON OFF  
45ns / 15ns 45ns / 15ns 45ns / 15ns  
125125125Ω  
60ns / 20ns 60ns / 20ns 60ns / 20ns  
260260260Ω  
• Audio and Video Switching  
5V R  
ON  
• General Purpose Circuits  
5V t  
/ t  
- +3V/+5V DACs and ADCs  
- Digital Filters  
ON OFF  
3V R  
ON  
- Operational Amplifier Gain Switching Networks  
- High Frequency Analog Switching  
- High Speed Multiplexing  
3V t  
/ t  
120ns / 40ns 120ns / 40ns 120ns / 40ns  
ON OFF  
16 Ld SOIC (N), 16 Ld 3x3 QFN,  
16 Ld TSSOP  
Packages  
Related Literature  
• Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2002. All Rights Reserved  
1
ISL84521, ISL84522, ISL84523  
Pinouts (Note 1)  
ISL84521 (SOIC, TSSOP)  
TOP VIEW  
ISL84521 (QFN)  
TOP VIEW  
IN1  
COM1  
NC1  
V-  
1
2
3
4
5
6
7
8
16 IN2  
15 COM2  
14 NC2  
13 V+  
16 15 14 13  
NC1  
V-  
1
2
3
4
12 NC2  
11 V+  
GND  
NC4  
COM4  
IN4  
12 N.C.  
11 NC3  
10 COM3  
GND  
NC4  
10 N.C.  
9
NC3  
5
6
7
8
9
IN3  
ISL84522 (SOIC, TSSOP)  
ISL84522 (QFN)  
TOP VIEW  
TOP VIEW  
IN1  
COM1  
NO1  
V-  
1
2
3
4
5
6
7
8
16 IN2  
15 COM2  
14 NO2  
13 V+  
16 15 14 13  
NO1  
V-  
1
12 NO2  
11 V+  
2
3
4
GND  
NO4  
COM4  
IN4  
12 N.C.  
11 NO3  
10 COM3  
GND  
NO4  
10 N.C.  
9
NO3  
9
IN3  
5
6
7
8
ISL84523 (SOIC, TSSOP)  
ISL84523 (QFN)  
TOP VIEW  
TOP VIEW  
IN1  
COM1  
NO1  
V-  
1
2
3
4
5
6
7
8
16 IN2  
15 COM2  
14 NC2  
13 V+  
16 15 14 13  
NO1  
V-  
1
2
3
4
12 NC2  
11 V+  
GND  
NO4  
COM4  
IN4  
12 N.C.  
11 NC3  
10 COM3  
GND  
NO4  
10 N.C.  
9
NC3  
9
IN3  
5
6
7
8
NOTE:  
1. Switches Shown for Logic “0” Input.  
2
ISL84521, ISL84522, ISL84523  
Truth Table  
ISL84521  
ISL84522  
ISL84523  
LOGIC SW 1, 2, 3, 4 SW 1, 2, 3, 4 SW 1, 4 SW 2, 3  
0
1
ON  
OFF  
ON  
OFF  
ON  
ON  
OFF  
OFF  
NOTE: Logic “0” 0.8V. Logic “1” 2.4V.  
Pin Descriptions  
PIN  
V+  
V-  
FUNCTION  
Positive Power Supply Input  
Negative Power Supply Input. Connect to GND for  
Single Supply Configurations.  
GND  
IN  
Ground Connection  
Digital Control Input  
COM  
NO  
Analog Switch Common Pin  
Analog Switch Normally Open Pin  
Analog Switch Normally Closed Pin  
No Internal Connection  
NC  
N.C.  
Ordering Information  
PART NO.  
(BRAND)  
(NOTE 2)  
TEMP.  
RANGE ( C)  
o
PACKAGE  
16 Ld SOIC (N)  
16 Ld QFN  
PKG. NO.  
M16.15  
ISL84521IB  
-40 to 85  
ISL84521IR*  
(521I)  
-40 to 85  
L16.3x3  
ISL84521IV  
ISL84522IB  
-40 to 85  
-40 to 85  
-40 to 85  
16 Ld TSSOP  
16 Ld SOIC (N)  
16 Ld QFN  
M16.173  
M16.15  
L16.3x3  
ISL84522IR*  
(522I)  
ISL84522IV  
ISL84523IB  
-40 to 85  
-40 to 85  
-40 to 85  
16 Ld TSSOP  
16 Ld SOIC (N)  
16 Ld QFN  
M16.173  
M16.15  
L16.3x3  
ISL84523IR*  
(523I)  
ISL84523IV  
NOTES:  
-40 to 85  
16 Ld TSSOP  
M16.173  
2. Most surface mount devices are available on tape and reel; add  
“-T” to suffix.  
* In Development.  
3
ISL84521, ISL84522, ISL84523  
Absolute Maximum Ratings  
Thermal Information  
o
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V  
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V  
V- to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15 to 0.3V  
All Other Pins (Note 3). . . . . . . . . . . . . ((V-) - 0.3V) to ((V+) + 0.3V)  
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 10mA  
Peak Current, IN, NO, NC, or COM  
Thermal Resistance (Typical, Note 4)  
θ
( C/W)  
JA  
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .  
16 Ld QFN Package. . . . . . . . . . . . . . . . . . . . . . . . .  
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature (Plastic Package) . . . . . . . 150 C  
Moisture Sensitivity (See Technical Brief TB363)  
All Other Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1  
QFN Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 2  
Maximum Storage Temperature Range. . . . . . . . . . . . -65 C to 150 C  
115  
75  
150  
o
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . 20mA  
ESD Rating (Per MIL-STD-883 Method 3015). . . . . . . . . . . . . .>2kV  
o
o
o
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C  
(SOIC and TSSOP - Lead Tips Only)  
Operating Conditions  
Temperature Range  
ISL8452XIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C  
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
3. Signals on NC, NO, COM, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to maximum current ratings.  
4. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
Electrical Specifications: ±5V Supply Test Conditions: V  
= ±4.5V to ±5.5V, GND = 0V, V  
= 2.4V, V  
= 0.8V (Note 5),  
INL  
SUPPLY  
Unless Otherwise Specified  
INH  
TEMP (NOTE 6)  
(NOTE 6)  
MAX  
o
PARAMETER  
TEST CONDITIONS  
( C)  
MIN  
TYP  
UNITS  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
Full  
25  
V-  
-
-
V+  
100  
125  
4
V
ANALOG  
ON Resistance, R  
V
= ±5V, I  
= 1.0mA, V  
= 1.0mA, V  
= 1.0mA, V  
= ±3V,  
65  
ON  
S
COM  
COM  
COM  
COM  
See Figure 5  
Full  
25  
-
-
R
Matching Between Channels,  
V
V
= ±5V, I  
= ±5V, I  
= ±3V  
-
1
ON  
R  
S
S
S
S
S
COM  
COM  
ON  
Full  
25  
-
-
6
R
Flatness, R  
= ±3V, Note 8  
-
7
12  
15  
1
ON  
FLAT(ON)  
Full  
25  
-
-
NO or NC OFF Leakage Current,  
or I  
V
7
= ±5.5V, V  
= ±5.5V, V  
= ±4.5V, V  
= ±4.5V, V  
or V  
= +4.5V, Note  
= +4.5V, Note  
-1  
-10  
-1  
-10  
-2  
-20  
0.01  
nA  
nA  
nA  
nA  
nA  
nA  
COM  
COM  
NO  
NC  
NC  
I
NO(OFF)  
NC(OFF)  
Full  
25  
-
0.01  
-
10  
1
COM OFF Leakage Current,  
V
7
or V  
NO  
I
COM(OFF)  
Full  
25  
10  
2
COM ON Leakage Current,  
V
= ±5.5V, V  
= V  
or V = ±4.5V, Note 7  
NC  
0.01  
-
COM  
NO  
I
COM(ON)  
Full  
20  
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Full  
Full  
Full  
-
1.6  
1.6  
2.4  
-
V
V
INH  
Input Voltage Low, V  
Input Current, I , I  
0.8  
-1  
INL  
V
= ±5.5V, V = 0V or V+  
IN  
0.03  
1
µA  
INH INL  
DYNAMIC CHARACTERISTICS  
Turn-ON Time, t  
S
V
V
= ±4.5V, V  
or V  
= ±3V, R = 300, C = 35pF,  
25  
Full  
25  
-
-
45  
-
80  
100  
30  
40  
-
ns  
ns  
ns  
ns  
ns  
ON  
S
NO  
NC  
L
L
= 0 to 3V, See Figure 1  
IN  
Turn-OFF Time, t  
V
V
= ±4.5V, V  
or V  
= ±3V, R = 300, C = 35pF,  
-
15  
-
OFF  
S
NO  
NC  
L
L
= 0 to 3V, See Figure 1  
IN  
Full  
25  
-
Break-Before-Make Time Delay  
(ISL84523), t  
V
V
= ±5.5V, V  
or V  
= ±3V, R = 300, C = 35pF,  
5
20  
S
NO  
NC  
L
L
= 0 to 3V, See Figure 3  
D
IN  
Charge Injection, Q  
C
= 1.0nF, V = 0V, R = 0, See Figure 2  
25  
25  
25  
-
-
-
1
2
2
5
-
pC  
pF  
pF  
L
G
G
NO or NC OFF Capacitance, C  
f = 1MHz, V  
f = 1MHz, V  
or V  
or V  
= V  
= 0V, See Figure 7  
= 0V, See Figure 7  
OFF  
NO  
NC  
COM  
COM  
COM OFF Capacitance,  
= V  
-
NO  
NC  
C
COM(OFF)  
COM ON Capacitance, C  
f = 1MHz, V  
or V  
= V  
= 0V, See Figure 7  
25  
-
5
-
pF  
COM(ON)  
NO  
NC  
COM  
4
ISL84521, ISL84522, ISL84523  
Electrical Specifications: ±5V Supply Test Conditions: V  
= ±4.5V to ±5.5V, GND = 0V, V  
Unless Otherwise Specified (Continued)  
= 2.4V, V  
= 0.8V (Note 5),  
INL  
SUPPLY  
INH  
TEMP (NOTE 6)  
(NOTE 6)  
MAX  
o
PARAMETER  
OFF Isolation  
Crosstalk, Note 9  
TEST CONDITIONS  
( C)  
MIN  
TYP  
>90  
UNITS  
dB  
R
= 50, C = 15pF, f = 100kHz,  
25  
25  
-
-
-
-
L
L
V
or V  
= 1V  
, See Figures 4 and 6  
NO  
NC  
RMS  
<-90  
dB  
POWER SUPPLY CHARACTERISTICS  
Power Supply Range  
Full  
25  
±2  
-1  
-1  
-1  
-1  
-
0.05  
-
±6  
1
V
Positive Supply Current, I+  
Negative Supply Current, I-  
NOTES:  
V
= ±5.5V, V = 0V or V+, Switch On or Off  
IN  
µA  
µA  
µA  
µA  
S
Full  
25  
1
0.05  
-
1
Full  
1
5. V = Input voltage to perform proper function.  
IN  
6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
o
7. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at 25 C.  
8. Flatness is defined as the delta between the maximum and minimum R  
9. Between any two switches.  
values over the specified voltage range.  
ON  
Electrical Specifications: 5V Supply  
Test Conditions: V+ = +4.5V to +5.5V, V- = GND = 0V, V  
Unless Otherwise Specified  
= 2.4V, V  
= 0.8V (Note 5),  
INL  
INH  
TEMP  
( C)  
MIN  
(NOTE 6)  
MAX  
(NOTE 6) UNITS  
o
PARAMETER  
TEST CONDITIONS  
TYP  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
Full  
25  
0
-
-
V+  
200  
250  
8
V
ANALOG  
ON Resistance, R  
V+ = 4.5V, I  
= 1.0mA, V or V  
NO NC  
= 3.5V,  
125  
ON  
COM  
See Figure 5  
Full  
25  
-
-
R
Matching Between Channels, V+ = 5V, I  
COM  
= 1.0mA, V  
NO  
or V  
NC  
= 3.5V  
-
2
ON  
R  
ON  
Full  
25  
-
-
10  
1
NO or NC OFF Leakage Current,  
V+ = 5.5V, V  
Note 7  
= 1V, 4.5V, V  
= 1V, 4.5V, V  
or V  
or V  
= 4.5V, 1V,  
-1  
-10  
-1  
-10  
-2  
-20  
0.01  
nA  
nA  
nA  
nA  
nA  
nA  
COM  
COM  
COM  
NO  
NO  
NC  
I
or I  
NO(OFF)  
NC(OFF)  
Full  
25  
-
10  
1
COM OFF Leakage Current,  
V+ = 5.5V, V  
Note 7  
= 4.5V, 1V,  
0.01  
NC  
I
COM(OFF)  
Full  
25  
-
-
-
10  
2
COM ON Leakage Current,  
V+ = 5.5V, V  
= 1V, 4.5V, Note 7  
I
COM(ON)  
Full  
20  
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Full  
Full  
Full  
-
1.6  
1.6  
2.4  
-
V
V
INH  
Input Voltage Low, V  
Input Current, I , I  
0.8  
-1  
INL  
V+ = 5.5V, V = 0V or V+  
IN  
0.03  
1
µA  
INH INL  
DYNAMIC CHARACTERISTICS  
Turn-ON Time, t  
V+ = 4.5V, V  
or V  
= 3V, R = 300, C = 35pF,  
25  
Full  
25  
-
-
60  
-
100  
150  
50  
75  
-
ns  
ns  
ns  
ns  
ns  
ON  
NO  
NC  
L
L
V
= 0 to 3V, See Figure 1  
IN  
Turn-OFF Time, t  
V+ = 4.5V, V  
or V  
= 3V, R = 300, C = 35pF,  
-
20  
-
OFF  
NO  
NC  
L
L
V
= 0 to 3V, See Figure 1  
IN  
Full  
25  
-
Break-Before-Make Time Delay  
(ISL84523), t  
V+ = 5.5V, V  
or V  
= 3V, R = 300, C = 35pF,  
10  
30  
NO  
= 0 to 3V, See Figure 3  
IN  
NC  
L
L
V
C
D
Charge Injection, Q  
= 1.0nF, V = 0V, R = 0Ω, See Figure 2  
25  
-
1
5
pC  
L
G
G
POWER SUPPLY CHARACTERISTICS  
Positive Supply Current, I+  
V+ = 5.5V, V = 0V or V+, Switch On or Off  
IN  
25  
Full  
25  
-1  
-1  
-1  
-1  
0.05  
1
1
1
1
µA  
µA  
µA  
µA  
-
0.05  
-
Negative Supply Current, I-  
Full  
5
ISL84521, ISL84522, ISL84523  
Electrical Specifications: 3V Supply  
Test Conditions: V+ = +2.7V to +3.6V, V- = GND = 0V, V  
Unless Otherwise Specified  
= 2.4V, V  
= 0.8V (Note 5),  
INL  
INH  
TEMP  
( C)  
MIN  
(NOTE 6)  
MAX  
(NOTE 6) UNITS  
o
PARAMETER  
TEST CONDITIONS  
TYP  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
Full  
25  
0
-
-
260  
-
V+  
500  
600  
V
ANALOG  
ON Resistance, R  
V+ = 2.7V, I  
= 0.1mA, V  
NO  
or V = 1V  
NC  
ON  
COM  
Full  
-
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Full  
Full  
Full  
-
1.6  
1.6  
2.4  
-
V
V
INH  
Input Voltage Low, V  
Input Current, I , I  
0.8  
-1  
INL  
V+ = 3.6V, V = 0V or V+  
IN  
0.03  
1
µA  
INH INL  
DYNAMIC CHARACTERISTICS  
Turn-ON Time, t  
V+ = 2.7V, V  
or V  
= 1.5V, R = 300, C = 35pF,  
25  
Full  
25  
-
-
120  
-
250  
300  
80  
ns  
ns  
ns  
ns  
ns  
ON  
NO  
NC  
L
L
V
= 0 to V+, See Figure 1  
IN  
Turn-OFF Time, t  
V+ = 2.7V, V  
or V  
= 1.5V, R = 300, C = 35pF,  
-
40  
-
OFF  
NO  
NC  
L
L
V
= 0 to V+, See Figure 1  
IN  
Full  
25  
-
100  
-
Break-Before-Make Time Delay  
(ISL84523), t  
V+ = 3.6V, V  
or V  
= 1.5V, R = 300, C = 35pF,  
15  
50  
NO  
= 0 to 3V, See Figure 3  
IN  
NC  
L
L
V
C
D
Charge Injection, Q  
= 1.0nF, V = 0V, R = 0Ω, See Figure 2  
25  
-
0.5  
5
pC  
L
G
G
POWER SUPPLY CHARACTERISTICS  
Positive Supply Current, I+  
V+ = 3.6V, V = 0V or V+, Switch On or Off  
IN  
25  
Full  
25  
-1  
-1  
-1  
-1  
0.05  
1
1
1
1
µA  
µA  
µA  
µA  
-
0.05  
-
Negative Supply Current, I-  
Full  
Test Circuits and Waveforms  
V+  
3V  
t < 20ns  
r
t < 20ns  
f
C
LOGIC  
INPUT  
50%  
SWITCH  
INPUT  
0V  
NX  
C
t
V
OFF  
OUT  
NO or NC  
IN  
SWITCH  
INPUT  
V
NX  
V
COM  
V
OUT  
90%  
90%  
C
35pF  
R
300Ω  
L
L
GND  
SWITCH  
OUTPUT  
0V  
LOGIC  
INPUT  
t
ON  
C
V-  
Repeat test for all switches. C includes fixture and stray  
L
Logic input waveform is inverted for switches that have the opposite  
logic sense.  
capacitance.  
R
L
------------------------------  
V
= V  
OUT  
(NO or NC)  
R
+ R  
(ON)  
L
FIGURE 1B. TEST CIRCUIT  
FIGURE 1A. MEASUREMENT POINTS  
FIGURE 1. SWITCHING TIMES  
6
ISL84521, ISL84522, ISL84523  
Test Circuits and Waveforms (Continued)  
V+  
C
SWITCH  
OUTPUT  
V  
OUT  
V
R
OUT  
G
COM  
NO or NC  
V
OUT  
3V  
0V  
ON  
ON  
LOGIC  
INPUT  
V
GND  
OFF  
G
IN  
C
L
LOGIC  
INPUT  
C
Q = V  
x C  
L
OUT  
V-  
Logic input waveform is inverted for switches that have the opposite  
logic sense.  
Repeat test for all switches. C includes fixture and stray  
L
capacitance.  
FIGURE 2B. TEST CIRCUIT  
FIGURE 2A. MEASUREMENT POINTS  
FIGURE 2. CHARGE INJECTION  
V+  
C
C
3V  
LOGIC  
INPUT  
V
OUT1  
NO1  
NC2  
IN1  
V
NX  
COM1  
COM2  
0V  
C
V
R
L1  
L1  
35pF  
OUT2  
300Ω  
90%  
90%  
SWITCH  
OUTPUT  
R
C
L2  
300Ω  
L2  
V
35pF  
0V  
0V  
OUT1  
IN2  
LOGIC  
INPUT  
GND  
90%  
90%  
SWITCH  
OUTPUT  
V
OUT2  
C
t
t
D
D
V-  
C
includes fixture and stray capacitance.  
L
Reconfigure accordingly to test SW3 and SW4.  
FIGURE 3B. TEST CIRCUIT  
FIGURE 3A. MEASUREMENT POINTS  
FIGURE 3. BREAK-BEFORE-MAKE TIME (ISL84523 ONLY)  
V+  
C
V+  
C
R
= V /1mA  
1
SIGNAL  
GENERATOR  
ON  
NO or NC  
NO or NC  
V
NX  
0V or 2.4V  
IN  
1mA  
0.8V or 2.4V  
IN  
V
1
COM  
COM  
ANALYZER  
GND  
GND  
R
L
C
C
V-  
V-  
Repeat test for all switches.  
Repeat test for all switches.  
FIGURE 5. R  
FIGURE 4. OFF ISOLATION TEST CIRCUIT  
TEST CIRCUIT  
ON  
7
ISL84521, ISL84522, ISL84523  
Test Circuits and Waveforms (Continued)  
V+  
V+  
C
SIGNAL  
GENERATOR  
50Ω  
NO1 or NC1  
IN2  
COM1  
NO or NC  
0V or 2.4V  
IN  
0V or 2.4V  
0V or 2.4V  
IMPEDANCE  
ANALYZER  
IN2  
NO  
COM  
CONNECTION  
NO2 or NC2  
COM2  
ANALYZER  
GND  
GND  
R
L
C
V-  
V-  
FIGURE 6. CROSSTALK TEST CIRCUIT  
FIGURE 7. CAPACITANCE TEST CIRCUIT  
unaffected by this approach, but the switch resistance may  
increase, especially at low supply voltages.  
Detailed Description  
The ISL84521–ISL84523 quad analog switches offer precise  
switching capability from a bipolar ±2V to ±6V or a single 2V  
to 12V supply with low on-resistance (65) and high speed  
OPTIONAL PROTECTION  
DIODE  
switching (t  
= 45ns, t = 15ns). The devices are  
ON  
OFF  
especially well suited to portable battery powered equipment  
thanks to the low operating supply voltage (2V), low power  
consumption (1µW), low leakage currents (1nA max), and the  
tiny QFN packaging. High frequency applications also benefit  
from the wide bandwidth, and the very high OFF isolation and  
crosstalk rejection.  
V+  
OPTIONAL  
PROTECTION  
RESISTOR  
IN  
V
X
V
NO or NC  
COM  
Supply Sequencing And Overvoltage Protection  
V-  
As with any CMOS device, proper power supply sequencing  
is required to protect the device from excessive input  
currents which might permanently damage the IC. All I/O  
pins contain ESD protection diodes from the pin to V+ and to  
V- (see Figure 8). To prevent forward biasing these diodes,  
V+ and V- must be applied before any input signals, and  
input signal voltages must remain between V+ and V-. If  
these conditions cannot be guaranteed, then one of the  
following two protection methods should be employed.  
OPTIONAL PROTECTION  
DIODE  
FIGURE 8. OVERVOLTAGE PROTECTION  
Power-Supply Considerations  
The ISL8452X construction is typical of most CMOS analog  
switches, in that they have three supply pins: V+, V-, and  
GND. V+ and V- drive the internal CMOS switches and set  
their analog voltage limits, so there are no connections  
between the analog signal path and GND. Unlike switches  
with a 13V maximum supply voltage, the ISL8452X 15V  
maximum supply voltage provides plenty of room for the  
10% tolerance of 12V supplies (±6V or 12V single supply),  
as well as room for overshoot and noise spikes.  
Logic inputs can easily be protected by adding a 1kΩ  
resistor in series with the input (see Figure 8). The resistor  
limits the input current below the threshold that produces  
permanent damage, and the sub-microamp input current  
produces an insignificant voltage drop during normal  
operation.  
Adding a series resistor to the switch input defeats the  
purpose of using a low R  
switch, so two small signal  
ON  
diodes can be added in series with the supply pins to provide  
overvoltage protection for all pins (see Figure 8). These  
additional diodes limit the analog signal from 1V below V+ to  
1V above V-. The low leakage current performance is  
This family of switches performs equally well when operated  
with bipolar or single voltage supplies, and bipolar supplies  
need not be symmetrical. The minimum recommended  
8
ISL84521, ISL84522, ISL84523  
supply voltage is 2V or ±2V. It is important to note that the  
is the resistance to this feedthrough, while Crosstalk  
indicates the amount of feedthrough from one switch to  
another. Figure 16 details the high OFF Isolation and  
Crosstalk rejection provided by this family. At 10MHz, OFF  
isolation is about 50dB in 50Ω systems, decreasing  
approximately 20dB per decade as frequency increases.  
Higher load impedances decrease OFF Isolation and  
Crosstalk rejection due to the voltage divider action of the  
switch OFF impedance and the load impedance.  
input signal range, switching times, and ON-resistance  
degrade at lower supply voltages. Refer to the electrical  
specification tables and Typical Performance Curves for  
details.  
V+ and GND power the internal logic (thus setting the digital  
switching point) and level shifters. The level shifters convert  
the logic levels to switched V+ and V- signals to drive the  
analog switch gate terminals, so switch parameters -  
especially R  
ON  
- are strong functions of both supplies.  
Leakage Considerations  
Reverse ESD protection diodes are internally connected  
between each analog-signal pin and both V+ and V-. One  
of these diodes conducts if any analog signal exceeds V+  
or V-.  
Logic-Level Thresholds  
V+ and GND power the internal logic stages, so V- has no  
affect on logic thresholds. This switch family is TTL  
compatible (0.8V and 2.4V) over a V+ supply range of 2.5V  
to 10V. At 12V the V level is about 2.7V, so for best results  
Virtually all the analog leakage current comes from the ESD  
diodes to V+ or V-. Although the ESD diodes on a given  
signal pin are identical and therefore fairly well balanced,  
they are reverse biased differently. Each is biased by either  
V+ or V- and the analog signal. This means their leakages  
will vary as the signal varies. The difference in the two diode  
leakages to the V+ and V- pins constitutes the analog-signal-  
path leakage current. All analog leakage current flows  
between each pin and one of the supply terminals, not to the  
other switch terminal. This is why both sides of a given  
switch can show leakage currents of the same or opposite  
polarity. There is no connection between the analog signal  
paths and GND.  
IH  
use a logic family the provides a V  
greater than 3V.  
OH  
The digital input stages draw supply current whenever the  
digital input voltage is not at one of the supply rails. Driving  
the digital input signals from GND to V+ with a fast transition  
time minimizes power dissipation.  
High-Frequency Performance  
In 50Ω systems, signal response is reasonably flat even past  
300MHz (see Figure 15), with a small signal -3dB bandwidth  
in excess of 400MHz, and a large signal bandwidth  
exceeding 300MHz.  
An off switch acts like a capacitor and passes higher  
frequencies with less attenuation, resulting in signal  
feedthrough from a switch’s input to its output. OFF Isolation  
o
Typical Performance Curves T = 25 C, Unless Otherwise Specified  
A
90  
80  
70  
60  
50  
300  
250  
200  
150  
100  
V
= (V+) - 1V  
I
= 1mA  
V- = -5V  
COM  
= 1mA  
COM  
I
COM  
o
85 C  
o
85 C  
o
25 C  
o
25 C  
o
-40 C  
V+ = 2.7V  
V- = 0V  
o
-40 C  
40  
50  
225  
250  
V- = 0V  
o
85 C  
200  
150  
100  
50  
175  
125  
o
o
85 C  
25 C  
V+ = 3.3V  
V- = 0V  
o
o
-40 C  
25 C  
75  
140  
o
V+ = 5V  
V- = 0V  
85 C  
o
-40 C  
110  
80  
o
25 C  
o
-40 C  
0
50  
3
4
5
6
7
8
9
10  
11  
12  
0
1
2
V
3
4
5
V+ (V)  
(V)  
COM  
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE  
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE  
9
ISL84521, ISL84522, ISL84523  
o
Typical Performance Curves T = 25 C, Unless Otherwise Specified (Continued)  
A
180  
5
V
= ±2V  
I
= 1mA  
S
COM  
140  
100  
o
85 C  
o
25 C  
2.5  
o
-40 C  
60  
120  
V+ = 3.3V  
V+ = 5V  
V
= ±3V  
0
S
100  
80  
o
85 C  
o
25 C  
o
2.5  
60  
-40 C  
40  
90  
V
= ±5V  
S
o
V
= ±5V  
85 C  
-5  
S
70  
50  
30  
o
25 C  
o
-40 C  
4
-7.5  
-5  
-2.5  
0
2.5  
5
-5  
-4  
-3  
-2  
-1  
0
1
2
3
5
V
(V)  
COM  
V
(V)  
COM  
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE  
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE  
250  
125  
o
o
V
= (V+) - 1V  
V
= (V+) - 1V  
COM  
V- = -5V  
25 C  
o
V- = -5V  
25 C  
COM  
200  
150  
100  
50  
100  
-40 C  
o
-40 C  
75  
o
o
25 C  
50  
25 C  
o
o
85 C  
85 C  
25  
o
o
-40 C  
-40 C  
0
0
300  
50  
V- = 0V  
V- = 0V  
250  
200  
150  
100  
50  
40  
30  
20  
10  
o
85 C  
o
85 C  
o
25 C  
o
25 C  
o
o
-40 C  
-40 C  
0
2
3
4
5
6
7
8
9
10  
11  
12  
2
3
4
5
6
7
8
9
10  
11  
12  
V+ (V)  
V+ (V)  
FIGURE 13. TURN - ON TIME vs SUPPLY VOLTAGE  
FIGURE 14. TURN - OFF TIME vs SUPPLY VOLTAGE  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
10  
V
= ±5V  
S
V+ = 3V to 12V or  
3
0
V
= ±2V to ±5V  
= 50Ω  
20  
30  
40  
50  
60  
70  
80  
90  
100  
S
V
= 0.2V  
P-P  
GAIN  
IN  
R
L
V
= 5V  
-3  
IN P-P  
0
PHASE  
ISOLATION  
45  
90  
V
= 0.2V  
IN  
P-P  
= 5V  
V
IN  
P-P  
CROSSTALK  
135  
180  
-100  
-110  
R
= 50Ω  
L
110  
100M 500M  
1
10  
100  
FREQUENCY (MHz)  
600  
1k  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
FIGURE 15. FREQUENCY RESPONSE  
FIGURE 16. CROSSTALK AND OFF ISOLATION  
10  
ISL84521, ISL84522, ISL84523  
Die Characteristics  
SUBSTRATE POTENTIAL (POWERED UP):  
V-  
TRANSISTOR COUNT:  
ISL84521: 188  
ISL84522: 188  
ISL84523: 188  
PROCESS:  
Si Gate CMOS  
11  
ISL84521, ISL84522, ISL84523  
Small Outline Plastic Packages (SOIC)  
M16.15 (JEDEC MS-012-AC ISSUE C)  
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC  
PACKAGE  
N
INDEX  
AREA  
0.25(0.010)  
M
B M  
H
E
INCHES  
MILLIMETERS  
-B-  
SYMBOL  
MIN  
MAX  
0.0688  
0.0098  
0.020  
MIN  
1.35  
0.10  
0.33  
0.19  
9.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
10.00  
4.00  
NOTES  
A
A1  
B
C
D
E
e
0.0532  
0.0040  
0.013  
-
1
2
3
L
-
SEATING PLANE  
A
9
-A-  
0.0075  
0.3859  
0.1497  
0.0098  
0.3937  
0.1574  
-
o
h x 45  
D
3
4
-C-  
α
µ
0.050 BSC  
1.27 BSC  
-
e
A1  
C
H
h
0.2284  
0.0099  
0.016  
0.2440  
0.0196  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
B
0.10(0.004)  
5
0.25(0.010) M  
C A M B S  
L
6
N
α
16  
16  
7
NOTES:  
°
°
°
°
0
8
0
8
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
Rev. 0 12/93  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above  
the seating plane, shall not exceed a maximum value of 0.61mm  
(0.024 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions are  
not necessarily exact.  
12  
ISL84521, ISL84522, ISL84523  
Thin Shrink Small Outline Plastic Packages (TSSOP)  
M16.173  
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC  
PACKAGE  
INDEX  
AREA  
0.25(0.010)  
M
B M  
E
E1  
-B-  
INCHES  
MIN  
MILLIMETERS  
GAUGE  
PLANE  
SYMBOL  
MAX  
0.047  
0.006  
0.051  
0.0118  
0.0079  
0.201  
0.177  
MIN  
-
MAX  
1.20  
0.15  
1.05  
0.30  
0.20  
5.10  
4.50  
NOTES  
A
A1  
A2  
b
-
-
1
2
3
0.002  
0.031  
0.0075  
0.0035  
0.193  
0.169  
0.05  
0.80  
0.19  
0.09  
4.90  
4.30  
-
L
-
0.25  
0.010  
0.05(0.002)  
SEATING PLANE  
A
9
-A-  
D
c
-
D
3
-C-  
E1  
e
4
α
A2  
e
A1  
0.026 BSC  
0.65 BSC  
-
c
b
0.10(0.004)  
E
0.246  
0.256  
6.25  
0.45  
6.50  
0.75  
-
0.10(0.004) M  
C
A M B S  
L
0.0177  
0.0295  
6
N
16  
16  
7
°
°
°
°
NOTES:  
0
8
0
8
-
α
1. These package dimensions are within allowable dimensions of  
JEDEC MO-153-AB, Issue E.  
Rev. 0 6/98  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm  
(0.006 inch) per side.  
4. Dimension “E1” does not include interlead flash or protrusions. Inter-  
lead flash and protrusions shall not exceed 0.15mm (0.006 inch) per  
side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. Dimension “b” does not include dambar protrusion. Allowable dambar  
protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimen-  
sion at maximum material condition. Minimum space between protru-  
sion and adjacent lead is 0.07mm (0.0027 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions  
are not necessarily exact. (Angles in degrees)  
13  
ISL84521, ISL84522, ISL84523  
Quad No-Lead Flatpack (QFN)  
2X  
L16.3x3  
0.15  
E1/2  
A2  
C A  
D
16 LEAD QUAD NO-LEAD FLAT PACKAGE  
A
(COMPLIANT TO JEDEC MO-220-VEEC ISSUE C)  
D/2  
MILLIMETERS  
D1  
SYMBOL  
MIN  
NOMINAL  
MAX  
0.90  
0.05  
0.70  
NOTES  
D1/2  
A
A1  
A2  
A3  
b
-
-
-
-
-
2X  
N
0.15 C  
B
-
-
6
0.50 DIA.  
-
-
1
2
3
E/2  
0.20 REF  
-
E1  
0.23  
0.95  
0.95  
0.28  
0.35  
1.25  
1.25  
5,8  
E
B
D
3.00 BSC  
-
D1  
D2  
E
2.75 BSC  
-
0.15 C  
B
1.10  
7,8  
2X  
TOP VIEW  
0.15 C  
A
3.00 BSC  
-
2X  
E1  
E2  
e
2.75 BSC  
-
0
1.10  
7,8  
A
NX  
C
0.65 BSC  
-
0.05 C  
k
0.25  
0.50  
-
-
-
A1  
A3  
SIDE VIEW  
SEATING  
PLANE  
L
0.60  
0.75  
8
N
16  
4
4
-
2
5
NX b  
0.10 M C A B  
Nd  
Ne  
P
3
4X P  
4X P  
8
7
D2  
D2  
3
NX k  
-
-
0.60  
12  
-
2
N
θ
-
-
Rev. 0 6/01  
1
NOTES:  
2
3
(Ne-1)Xe  
REF.  
1. Dimensioning and tolerancing per ASME Y14.5-1994.  
2. N is the number of terminals.  
E2  
7
8
3. Nd is the number of terminals in the X direction, and Ne  
is the number of terminals in the Y direction.  
E2/2  
NX L  
8
4. Controlling dimension: Millimeters. Converted  
dimensions to inches are not necessarily exact. Angles  
are in degrees.  
e
(Nd-1)Xe  
REF.  
5. Dimension b applies to the plated terminal and is  
measured between 0.20mm and 0.25mm from the  
terminal tip.  
C
C
BOTTOM VIEW  
A1  
C
L
NX b  
C
L
6. The Pin #1 identifier exists on the top surface as an  
indentation mark in the molded body.  
5
7. Dimensions D2 and E2 are the maximum exposed pad  
dimensions for improved grounding and thermal  
performance.  
SECTION "C-C"  
TERMINAL TIP  
e
e
8. Nominal dimensions provided to assist with PCB Land  
Pattern Design efforts, see Technical Brief TB389.  
FOR ODD TERMINAL/SIDE  
FOR EVEN TERMINAL/SIDE  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
14  

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