IRFI9630 [ETC]
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| 型号： | IRFI9630 |
| 厂家： | 
ETC |
| 描述： |
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| 文件： | 总6页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFI9630G-002
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-002PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
VISHAY
IRFI9630G-002PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-003PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
VISHAY
IRFI9630G-003PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-004PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-005PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-006PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-009
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IRFI9630G-009PBF
Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
VISHAY
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