REF6150IDGKR
具有集成缓冲器和使能引脚的 5V、8ppm/°C 高精度电压基准 | DGK | 8 | -40 to 125
TI
SILICON
ETC
TE
TI
SINOPWER
MSYSTEM
VITALCONN
MSYSTEM
MSYSTEM
LPS-RK-61/4SP
LPS-RK â 600 Vac/300 Vdc, 1â10-60A, dual element, time-delay fuses
EATON
MSYSTEM
FVS-5WG-R
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
MSYSTEM
MSYSTEM
MSYSTEM
MSYSTEM
M5TS-75-R/BN
Super-mini Terminal Block Signal Conditioners M5-UNIT
MSYSTEM
MSYSTEM
MSYSTEM
ECE
6ED2231S12T
EiceDRIVER™ 1200 V three-phase gate driver with typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package for IGBT (Insulated Gate Biploar Transistor) / SiC(Silicon Carbide) Module and discretes.
INFINEON
MSYSTEM
MIMX8MM4CVTKZDA
i.MX 8M Mini Applications Processor Datasheet for Consumer Products
NXP
MSYSTEM
MSYSTEM
51U-4F4-P2
Panel Mounted Multi Power Meter 51-UNIT
MSYSTEM
FNS-GZ-C
Plug-in Signal Conditioners M-UNIT
MSYSTEM
SMI
51U-4A3-P3
Panel Mounted Multi Power Meter 51-UNIT
MSYSTEM
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
