ICE23L040? [ETC]
Mask ROM ; 掩膜ROM\n
| 型号： | ICE23L040? |
| 厂家： | 
ETC |
| 描述： | Mask ROM
|
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ICE23(L)M040
4Megabit Mask ROM
General Description
The ICE23M040/ICE23LM040 is a high speed 4M bits CMOS mask ROM, with 512K X 8 bit data
structure.
Feature
1. 90nS access time
2. 512K x 8 bits
3. 3.3V / 5V operating option
4. CMOS / TTL I/O option
5. CE / CEB select option
6. OE / OEB select option
7. Standby current : <5uA
8. 32 Pin PDIP, SOP ,TSOP or PLCC Package.
Pin Definition
N/C
A16
A15
A12
A7
1
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VDD
A18
A17
A14
A13
A8
4
3
2
1
32
31 30
3
A7
A6
A5
A4
A3
A2
A1
A0
D0
5
6
29
28
27
26
25
24
23
22
21
A14
A13
A8
4
5
7
A6
6
8
A9
32-LeadPLCC
A5
7
A9
32PinPDIP
9
A11
OEB
A10
CEB
D7
A4
8
A11
OEB
A10
CEB
D7
10
11
12
13
A3
9
A2
10
11
12
13
14
15
16
A1
A0
14
15 16 17
18 19 20
D0
D6
D1
D5
D2
D4
GND
D3
PinAssignmentsfor32-pinPlasticDIPsand32-LeadPLCCs
1
ICE semiconductor, inc.
Rev.1.0 2003/2/20
ICE23(L)M040
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
PinAssignmentof32-PinSOP
A11
A9
A8
A13
A14
A17
OEB
A10
CEB
D7
D6
D5
D4
A18
VDD
D3
N/C
A16
A15
A12
A7
A6
A5
A4
GND
D2
D1
D0
A0
A1
A2
A3
PinAssignmentof32-PinTSOP
PIN DESCRIPTION
Name
I/O Description
Positive power supply.
VDD
GND
CE/CEB
OE/OEB
A0-18
P
P
I
Negative power supply.
Chip enable input.
Output enable input.
Address input.
I
I
DO0-7
O
Data output.
ABSOLOUTE MAXIMUM RATINGS
Name
Symbol
Rating
Unit
Supply Voltage
Input Voltage
Operating temperature
Storage temperature
VDD
Vin
Topg
-0.3 to +7.0
-0.5 to VDD +0.5
-20 to +70
V
V
°C
°C
Tstg
-65 to +125
2
ICE semiconductor, inc.
Rev.1.0 2003/2/20
ICE23(L)M040
ALLOWABLE OPERATING CONDITIONS
Name
Symbol
VDD
VDD
Vi
MIN
2.6
TYP
3.3
MAX
3.6
Unit
Supply Voltage 3.3V
Supply Voltage 5V
Input Voltage
V
V
V
4.5
5.0
5.5
-0.3
VDD+0.3
DC ELECTRICAL CHARACTERISTICS
@VDD= 4.5~5.5V, T= -20~70°C, TTL
Item
Symbol
Ioh
Condition
MIN
MAX
-500
-
Unit
Output high current
Output low current
Input high voltage
Input low voltage
Voh=VDD-0.5V
-
2
uA
mA
V
Iol
Vol=0.5V
Vih
-
-
2.2
-
-
Vil
0.8
V
@VDD= 2.6~3.6V, T= -20~70°C, CMOS
Item
Symbol
Ioh
Condition
MIN
MAX
Unit
mA
mA
V
Output high current
Output low current
Input high voltage
Input low voltage
Voh=VDD-0.5V
-
-2
Iol
Vol=0.5V
2
-
Vih
-
-
0.8xVDD
-
-
Vil
0.2xVDD
V
AC ELECTRICAL CHARACTERISTICS
@VDD= 4.5~5.5V, T= -20~70°C, TTL
Vih / Vil = Min / Max, Tr = Tf = 10ns, Cl = 50pF
Item
Symbol
MIN
MAX
-
Unit
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Trc
Taa
Tce
Toe
Toh
Toz
Tcz
90
-
Address access time
90
90
40
-
Chip enable access time
-
Output enable access time
Output hold time from addresses change
-
0
0
0
OE disable to invalid output
CE disable to invalid output
20
20
3
ICE semiconductor, inc.
Rev.1.0 2003/2/20
ICE23(L)M040
@VDD= 2.6~3.6V, T= -20~70°C, CMOS
Vih / Vil = Min / Max, Tr = Tf = 10ns, Cl = 50pF
Item
Read cycle time
Symbol
Trc
MIN
MAX
-
Unit
ns
ns
ns
ns
ns
ns
ns
120
Address access time
Chip enable access time
Taa
Tce
-
-
120
120
40
-
Output enable access time
Output hold time from addresses change
Toe
Toh
Toz
-
0
0
0
OE disable to invalid output
CE disable to invalid output
20
20
Tcz
R C
AA
T
T
A[16:0]
TC Z
TC E
C E B
TO Z
T OE
OEB
TOH
D[7:0]
DATA VALID
DATA VALID
Figure 2: Read Cycle Timing diagram
4
ICE semiconductor, inc.
Rev.1.0 2003/2/20
ICE23(L)M040
PACKAGE INFORMATION
32-Pin PDIP
32
17
ITEM
A
M ILLIM ETERS
42.13max.
1.90[REF]
2.54[TP]
INCHES
1.660max
.075[REF]
.100[TP]
.018[TyP]
1.500
B
C
D
.46[TyP]
E
38.07
F
1.27[TyP]
3.30±.25
.51[REF]
3.94±.25
5.33max.
15.22±.25
13.97±.25
.25[TYP]
.050[TyP]
.130±.010
.020[REF]
.155±.010
.210max
.600±.010
.550±.010
.010[TYP]
1
16
K
L
G
H
I
A
I J
J
K
H
L
M
G
NOTE:Eachleadcenterlineislocatedwithin.25
mm[.01inch]ofitstrueposition[TP]at
maximum matrialcondtion.
F
D
C
B
M
0~15i
E
32-Pin SOP
32
17
ITEM
A
B
M ILLIM ETERS
20.95max.
1.00[REF]
1.27[TP]
.40[TyP]
.05min.
INCHES
.825max
.039[REF]
.050[TP]
.016[TyP]
.0002min.
.120max.
.106±.005
.556±.010
.445±.005
.056
C
D
E
F
G
3.05max.
2.69±.13
14.12±.25
11.30±.13
1.42
H
I
J
1
16
G
H
I
K
L
.20[TYP]
.79
.008[TYP]
.031
J
A
NOTE:Eachleadcenterlineislocatedwithin.25
mm[.01inch]ofitstrueposition[TP]at
maximum matrialcondtion.
F
K
L
E
B
D
C
32-Pin TSOP
ITEM
A
M ILLIM ETERS
20.0±.20
18.40±.10
8.20max.
.15[Typ.]
.80[Typ.]
.20±.10
.30±.10
.50[Typ.]
.45max.
0~.20
INCHES
.78±.006
.724±.004
.323max.
.006[Typ.]
.031[Typ.]
.008±.004
.012±.004
.020[TyP]
.018max.
0~.008
A
B
B
C
D
E
F
G
H
C
I
J
N
K
1.00±.10
1.27max.
.50
0~5。
.039±.004
.050max
.020
L
M
M
N
.500
K
L
NOTE:Eachleadcenterlineislocatedwithin.25
mm[.01inch]ofitstrueposition[TP]
at maximum materialcondition.
D
E
I
J
G
H
F
5
ICE semiconductor, inc.
Rev.1.0 2003/2/20
ICE23(L)M040
32-Pin PLCC
A
B
1
30
4
32
ITEM
A
B
C
D
M ILLIM ETERS
INCHES
.490±.005
.453±.005
.553±.005
.590±.005
.076
29
12.44max.
11.50±.13
14.04±.13
14.98±.13
1.93
5
E
F
G
H
I
J
K
L
3.30±.25
2.03±.13
.51±.13
1.27[TyP]
.71[REF]
.46[REF]
10.40/12.94
(W ) (L)
.89R
.130±.010
.080±.005
.20±.005
.050[TyP]
.028[REF]
.018[REF]
.410/.510
(W ) (L)
.035R
D
C
9
25
M
N
13
21
.25[TyP]
.10[TyP]
NOTE:Eachleadcenterlineislocatedwithin.25
mm[.01inch]ofitstrueposition[TP]at
maximum materialcondition.
20
E
14
17
F
N
G
H
M
I
K
J
L
6
ICE semiconductor, inc.
Rev.1.0 2003/2/20
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